JPH03120718A - Method for removing semiconductor wafer in chucking mechanism - Google Patents

Method for removing semiconductor wafer in chucking mechanism

Info

Publication number
JPH03120718A
JPH03120718A JP25713989A JP25713989A JPH03120718A JP H03120718 A JPH03120718 A JP H03120718A JP 25713989 A JP25713989 A JP 25713989A JP 25713989 A JP25713989 A JP 25713989A JP H03120718 A JPH03120718 A JP H03120718A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
water
transfer arm
mount
jetted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP25713989A
Other languages
Japanese (ja)
Other versions
JPH0582053B2 (en
Inventor
Kazuo Kobayashi
一雄 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibayama Kikai Co Ltd
Original Assignee
Shibayama Kikai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibayama Kikai Co Ltd filed Critical Shibayama Kikai Co Ltd
Priority to JP25713989A priority Critical patent/JPH03120718A/en
Publication of JPH03120718A publication Critical patent/JPH03120718A/en
Publication of JPH0582053B2 publication Critical patent/JPH0582053B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE:To remove a semiconductor wafer without any damage to a semiconductor wafer finished face after grinding by a method wherein water containing numerous small bubbles in temporarily reserved in a slit of a chucking mechanism, the water containing numerous small bubbles damaging surface tension of static water is jetted to an upper face with a mount soaked and an entire lower face of the semiconductor wafer is uniformly floated. CONSTITUTION:By using a chucking mechanism 1 having vacuum suction, vacuum suction of an extremely thin semiconductor wafer A mounted on a mount 4 which has been subjected to grinding is released. At the same time water containing numerous small bubbles is jetted from an exhaust port commonly serving as an inlet port 3 and temporarily reserved in a slit 5. Water containing numerous small bubbles for damaging surface tension of a water layer made by a static state on the upper face of the mount 4 is jetted to the upper face of the mount 4 with the mount 4 soaked to have an entire lower face of the semiconductor wafer A floated uniformly, and the wafer A is sucked by a suction pat provided on a transfer arm and removed with the transfer arm lifted.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は研削盤等のチャック機構において、該チャック
機構から脆性で極薄の半導体ウェハを取外す方法に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a method for removing a brittle and extremely thin semiconductor wafer from a chuck mechanism of a grinding machine or the like.

〔発明の背景〕[Background of the invention]

本発明に係るこの種の半導体ウェハにおいては、コンピ
ュータ等の電子関連機器、所謂OA機器等の集積回路に
使用されており、その開発は日々進歩しており機器その
ものの小型化に伴う、より極薄で、より超高精度の質性
と1作業性の観点からより一層の拡径化が要求されてき
ている。
This type of semiconductor wafer according to the present invention is used in integrated circuits of electronic related equipment such as computers, so-called office automation equipment, etc., and the development thereof is progressing day by day, and as the equipment itself becomes smaller, it is becoming more and more extreme. From the viewpoints of thinner, ultra-high precision quality and workability, there is a growing demand for further diameter expansion.

〔従来技術とその問題点〕[Prior art and its problems]

従来の研削盤等のバキューム吸着機能を有するチャック
機構の有孔物質から成る乗載台においては、先ず、半導
体ウェハをバキューム吸着して研削加工を施し、研削加
工後にバキューム吸着を開放し、エアーを逆送して半導
体ウェハを浮上さるようにして吸着パットで吸着し移送
アームを上昇させることによって剥がしているが、エア
ーの噴流のみでは乗載台の上面等に付着する研削屑等の
微粒異物は充分に除去できず、乗載台等の上面に残留し
たままであり、通常の厚みの半導体ウェハであれば多少
の微粒異物が残留したままバキューム吸着させても半導
体ウェハの上面が歪んだり破損したりする等の問題点は
殆ど発生しなかった。
In a conventional mounting platform made of a porous material with a chuck mechanism that has a vacuum suction function such as a grinding machine, the semiconductor wafer is first vacuum suctioned and ground, and after the grinding process, the vacuum suction is released and air is released. The semiconductor wafer is transported backwards, floated up, adsorbed by a suction pad, and removed by raising the transfer arm, but air jets alone cannot remove fine particles such as grinding debris that adhere to the top surface of the mounting table. They cannot be removed sufficiently and remain on the top surface of the mounting table, etc., and if the semiconductor wafer is of normal thickness, the top surface of the semiconductor wafer will be distorted or damaged even if the semiconductor wafer is vacuum-adsorbed with some fine particles remaining. There were almost no problems such as

然し乍ら、昨今要求されている極薄の半導体ウェハでは
チャック機構の乗載台の上面に研削屑等の微粒異物が僅
かに残留していてもバキューム吸着すると脆性で極薄の
半導体ウェハは折損したり、半導体ウェハそのものが微
粒異物によって歪んで研削加工する上面の平坦精度がで
なかったり、又、研削後の鏡面仕上された半導体ウェハ
の上面を吸着パットで吸着しチャック機構の上面から剥
がす場合もチャック機構の上面に付着している液体の表
面張力による吸着作用によって、半導体ウェハの損傷が
頻繁に発生し、しかも高速度回転で研削加工するので摩
擦熱による半導体ウェハへのダメージが引き起こされる
等の諸問題が出てきている。
However, with the ultra-thin semiconductor wafers that are in demand these days, even if there is a slight amount of fine foreign matter such as grinding debris remaining on the top surface of the mounting table of the chuck mechanism, if vacuum suction is applied, the ultra-thin semiconductor wafers are brittle and may break. In some cases, the semiconductor wafer itself may be distorted by fine particles and the top surface to be ground cannot be flattened, or the top surface of the mirror-finished semiconductor wafer after grinding may be picked up with a suction pad and removed from the top surface of the chuck mechanism. Semiconductor wafers are often damaged due to the adsorption effect caused by the surface tension of the liquid adhering to the top surface of the mechanism, and since grinding is performed at high speed rotation, damage to semiconductor wafers is caused by frictional heat. Problems are emerging.

その為に研削加工後にその都度別の洗浄装置で洗浄する
方法も取られているが時間的なロスが大きいものであっ
た。
For this reason, a method has been adopted in which a separate cleaning device is used for cleaning each time after each grinding process, but this involves a large loss of time.

〔発明の目的〕[Purpose of the invention]

本発明は上記の事由に鑑みて鋭意研鑵の結果、これらの
チャック機構の間隙部へ一時的に多量の微粒気泡を含有
する水を滞溜させ、静止状態の水の表面張力を破壊する
多量の微粒気泡を含有する水を有孔物質から成る乗載台
を浸透させ上面に噴流させて、半導体ウェハの下面全体
を均等に浮上させながら、移送アームに備えた吸着パッ
トで吸着させ移送アームを上昇させて取外す方法を提供
する目的である。
In view of the above reasons, the present invention has been developed as a result of intensive research and has been developed to temporarily accumulate water containing a large amount of fine air bubbles in the gaps of these chuck mechanisms, thereby destroying the surface tension of water in a stationary state. Water containing microscopic air bubbles penetrates the mounting platform made of a porous material and is jetted onto the upper surface.The entire lower surface of the semiconductor wafer is evenly floated, and the suction pad provided on the transfer arm absorbs the water and the transfer arm is moved. The purpose is to provide a method for lifting and removing.

〔発明の実施例〕[Embodiments of the invention]

斯る目的を達成した本発明の研削盤等のチャック機構に
おける半導体ウェハの取外し方法の実施3 例を以下図面を用いて説明する。
Three embodiments of the method for removing a semiconductor wafer in a chuck mechanism of a grinding machine or the like according to the present invention that achieves the above object will be described below with reference to the drawings.

第1図は本発明の実施による研削盤等のチャック機構本
体の一部分の構成要部を現した概要説明図であって、第
2図は多量の微粒気泡を含有する水の水流によって半導
体ウェハの浮上した状態を現した概要説明図である。
FIG. 1 is a schematic explanatory diagram showing the main components of a part of the main body of a chuck mechanism of a grinding machine or the like according to the present invention, and FIG. It is a schematic explanatory diagram showing a floating state.

本発明は研削盤等のチャック機構1において、該チャッ
ク機構1から脆性で極薄の半導体ウェハAを取外す方法
に関して、チャック機構1の上方辺へ先端に吸着パット
を備えた移送アームを昇降自在に設けると共に、該チャ
ック機構1へは円筒状の陥部2を形設し、該陥部2の底
面に間隙部5を設けて有孔物質から成る円盤状の乗載台
4を回転自在に軸承固定し、該軸の中心部を貫通する排
気口兼注水口3を設けた極薄の半導体ウェハAを研削加
工するためにバキューム吸着機能を有するチャック機構
1を用いて、前記乗載台4へ載置された研削加工後の極
薄の半導体ウェハAのバキューム吸着を解除すると同時
に前記排気口兼注水口3より多量の微粒気泡を含有する
水を噴流させて間隙部5へ一時的に滞溜させ、該乗載台
4の上面へ静止状態でできる水層の表面張力を破壊する
多量の微粒気泡を含有する水を有孔物質から成る乗載台
4を浸透させ、該乗載台4の上面に噴流して半導体ウェ
ハAの下面全体を均等に浮上させながら、移送アームに
備えた吸着パットで吸着させ移送アームを上昇させて取
外す方法である。
The present invention relates to a method for removing a brittle and ultra-thin semiconductor wafer A from a chuck mechanism 1 of a grinding machine, etc. The present invention relates to a method for removing a brittle and ultra-thin semiconductor wafer A from the chuck mechanism 1. In addition, a cylindrical recess 2 is formed in the chuck mechanism 1, and a gap 5 is provided at the bottom of the recess 2 to rotatably support a disc-shaped mounting base 4 made of a porous material. A chuck mechanism 1 having a vacuum suction function is used to grind an ultra-thin semiconductor wafer A which is fixed and has an exhaust port/water inlet 3 passing through the center of the shaft, and is placed on the mounting table 4. At the same time as the vacuum adsorption of the placed ultra-thin semiconductor wafer A after grinding is released, water containing a large amount of fine bubbles is jetted from the exhaust port/water inlet 3 and temporarily accumulates in the gap 5. The platform 4 made of a porous material is penetrated with water containing a large amount of fine air bubbles that destroys the surface tension of the water layer formed in a static state on the top surface of the platform 4. In this method, the entire lower surface of the semiconductor wafer A is uniformly floated by a jet on the upper surface, and the semiconductor wafer A is adsorbed by a suction pad provided on the transfer arm, and the transfer arm is raised and removed.

即ち5本発明を実施する装置は、第1図に図示の如く、
研削盤等のチャック機構本体1へは円筒状で平坦な底面
を有する陥部2を形設し、該陥部2の底面とポーラス状
セラミック等の有孔物質から成る乗載台4の下面との間
に適宜な容積を有する間隙部5を設けて円盤状の該乗載
台4を段部を形成する手段等によって回転自在に軸承固
定し、該軸の中心部を貫通する排気口兼注水口3を設け
、該排気口兼注水口3はチャック機構1を貫いて真空ポ
ンプ及び送水ポンプと接続されているもので、真空ポン
プを可動させて負荷をかけ極薄の半導体ウェハAをバキ
ューム吸着機能を有するチャック機構1と、該チャック
機構1の上方辺へ先端に吸着パットを備えた移送アーム
(図示しない)を昇降自在に設けた装置を用いて実施す
るものである。
That is, the apparatus for carrying out the present invention is as shown in FIG.
A chuck mechanism main body 1 of a grinding machine or the like is formed with a recess 2 having a cylindrical shape and a flat bottom, and the bottom of the recess 2 and the lower surface of a mounting base 4 made of a porous material such as porous ceramic are connected. A gap 5 having an appropriate volume is provided in between, and the disk-shaped platform 4 is rotatably fixed to a shaft by means of forming a step, etc., and an exhaust port and inlet penetrating through the center of the shaft is provided. A water inlet 3 is provided, and the exhaust port/water inlet 3 passes through the chuck mechanism 1 and is connected to a vacuum pump and a water pump.The vacuum pump is operated to apply a load and vacuum adsorb the ultra-thin semiconductor wafer A. This is carried out using a device that includes a chuck mechanism 1 having a function and a transfer arm (not shown) provided with a suction pad at the tip on the upper side of the chuck mechanism 1 so as to be movable up and down.

前記有孔物質から成る乗載台4へ載置された研削加工後
の極薄の半導体ウェハAのバキューム吸着を解除すると
同時に、前記排気口兼注水口3より送水ポンプを可動さ
せて多量の微粒気泡を含有する水を噴流させると、該微
粒気泡を含有する水は容積を有する間隙部5へ一時的に
滞溜するものであり、更に送水を続けると多量の微粒気
泡を含有する水は該間隙部5を満たし一気に多量の微粒
気泡を含有する水は有孔物質から成る乗載台4を浸透さ
せ上面に噴流させるもので、該乗載台4の上面へ静止状
態でできる水層の表面張力を破壊させるに充分な多量の
微粒気泡を含有するの水を噴流させるものであり、該有
孔物質から成る乗載台4を浸透した多量の微粒気泡と噴
流する充分な水量の水とによって表面張力を容易に破壊
させることができ、加えて、半導体ウェハAの下面全体
を該微粒気泡と水によって均等に浮上させながら、移送
アームに備えた吸着パットで吸着させ移送アームを上昇
させて取外すことによって、該極薄の半導体ウェハAの
破損を無く取外せると共に、半導体ウェハAの下面とチ
ャック機構1の上面とを水によって洗い流し洗浄すると
同時に研削による摩擦熱を冷却させるものである。
At the same time, the vacuum suction of the ultra-thin semiconductor wafer A after the grinding process placed on the platform 4 made of a porous material is released, and at the same time, the water pump is operated from the exhaust port/water inlet 3 to remove a large amount of fine particles. When water containing air bubbles is jetted, the water containing fine air bubbles temporarily accumulates in the gap 5 having a volume, and when water continues to be fed further, the water containing a large amount of air bubbles flows into the gap 5. The water that fills the gap 5 and contains a large amount of microscopic bubbles at once permeates the platform 4 made of a porous material and is jetted onto the top surface of the platform 4, causing a static water layer to form on the top surface of the platform 4. It jets water containing a sufficient amount of fine air bubbles to break the tension, and by the large amount of fine air bubbles that permeate the platform 4 made of the porous material and a sufficient amount of water that flows out. The surface tension can be easily broken, and in addition, the entire lower surface of the semiconductor wafer A is evenly floated by the fine air bubbles and water, and is adsorbed by the suction pad provided on the transfer arm, and the transfer arm is lifted and removed. As a result, the extremely thin semiconductor wafer A can be removed without damage, and at the same time, the lower surface of the semiconductor wafer A and the upper surface of the chuck mechanism 1 are washed and cleaned with water, and at the same time, the frictional heat caused by the grinding is cooled.

この様にして静止状態でできる水層の表面張力を容易に
破壊させる多量の微粒気泡と充分な水量の水を噴流させ
て取外すので、時間的なロスをすることなく安全確実に
半導体ウェハAを取外すことができ、且つ、チャック機
構1及び乗載台4の上面は水流によって洗浄され、更に
、研削することにより引き起こされる摩擦熱を蓄えるこ
となく冷却させる取外し方法であって、取外した半導体
ウェハAを別のシステム装置へ移送した後1次の未研削
の半導体ウェハAは効率よく充分に洗浄され、摩擦熱も
解消されたチャック機構1の上面へバキューム吸着され
、順次研削することができるものである。
In this way, the semiconductor wafer A is removed by jetting a large amount of microbubbles and a sufficient amount of water that easily destroys the surface tension of the water layer that forms in a stationary state, thereby safely and reliably removing the semiconductor wafer A without wasting time. The semiconductor wafer A that has been removed can be removed, the upper surfaces of the chuck mechanism 1 and the mounting table 4 are cleaned by a water stream, and the removed semiconductor wafer A is cooled without accumulating frictional heat caused by grinding. After transferring the first unground semiconductor wafer A to another system device, the first unground semiconductor wafer A is vacuum-adsorbed onto the upper surface of the chuck mechanism 1, which has been efficiently and sufficiently cleaned and freed from frictional heat, and can be ground sequentially. be.

〔発明の効果〕〔Effect of the invention〕

以上の如く、本発明は時間的ロスをすることな7 8 く研削後の半導体ウェハ鏡面に何等障害を及ぼさずに取
外しができるだけでなく、半導体ウェハの下面及びチャ
ック機構の上面の洗浄を行い、合わせて研削による摩擦
熱を冷却できるものであって。
As described above, the present invention not only allows removal of the semiconductor wafer after grinding without any loss of time and without causing any damage to the mirror surface of the semiconductor wafer, but also cleans the bottom surface of the semiconductor wafer and the top surface of the chuck mechanism. In addition, it can cool down the frictional heat caused by grinding.

其の貢献性は計り知れないものがあり、極めて有意義な
効果を奏するものである。
The contribution it makes is immeasurable and has extremely significant effects.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施による研削盤等のチャック機構本
体の一部分の構成要部を現した概要説明図である。 第2図は水流によって半導体ウェハの浮上した状態を現
した概要説明図である6 A−半導体ウェハ。 1−チャック機構、2−陥部、3−排気口兼注水口、4
−乗載台、5−間隙部。 第1図 第2図
FIG. 1 is a schematic explanatory diagram showing the main components of a part of a chuck mechanism main body of a grinding machine or the like according to the present invention. FIG. 2 is a schematic explanatory diagram showing a state in which a semiconductor wafer is floated by a water flow. 6A-Semiconductor wafer. 1-chuck mechanism, 2-recess, 3-exhaust port and water inlet, 4
- platform, 5- gap section; Figure 1 Figure 2

Claims (1)

【特許請求の範囲】  チャック機構の上方辺へ先端に吸着パットを備えた移
送アームを昇降自在に設けると共に、該チャック機構へ
は円筒状の陥部を形設し、該陥部の底面に間隙部を設け
て有孔物質から成る円盤状の乗載台を回転自在に軸承固
定し、該軸の中心部を貫通する排気口兼注水口を設けた
極薄の半導体ウェハを研削加工するためにバキューム吸
着機能を有するチャック機構を用いて、 前記乗載台へ載置された研削加工後の極薄の半導体ウェ
ハのバキューム吸着を解除すると同時に前記排気口兼注
水口より多量の微粒気泡を含有する水を噴流させて間隙
部へ一時的に滞溜させ、該乗載台の上面へ静止状態でで
きる水層の表面張力を破壊する多量の微粒気泡を含有す
る水を有孔物質から成る乗載台を浸透させ、該乗載台の
上面に噴流して半導体ウェハの下面全体を均等に浮上さ
せながら、移送アームに備えた吸着パットで吸着させ移
送アームを上昇させて取外すことを特徴とするチャック
機構における半導体ウェハの取外し方法。
[Claims] A transfer arm equipped with a suction pad at the tip is provided on the upper side of the chuck mechanism so as to be able to move up and down, and a cylindrical recess is formed in the chuck mechanism, and a gap is formed at the bottom of the recess. In order to grind ultra-thin semiconductor wafers, a disk-shaped platform made of a porous material is rotatably fixed on a shaft with a shaft, and an exhaust port and water injection port is provided passing through the center of the shaft. Using a chuck mechanism with a vacuum suction function, the vacuum suction of the ultra-thin semiconductor wafer placed on the mounting table after grinding is released, and at the same time, a large amount of fine air bubbles is contained from the exhaust port and water injection port. Water is jetted and temporarily accumulated in the gap, and water containing a large amount of microbubbles that breaks the surface tension of the water layer formed in a static state on the top surface of the platform is mounted on a vehicle made of a porous material. A chuck characterized in that the semiconductor wafer is infiltrated with the base and jetted onto the upper surface of the mounting base to evenly levitate the entire lower surface of the semiconductor wafer, and the semiconductor wafer is adsorbed by a suction pad provided on the transfer arm and removed by raising the transfer arm. A method for removing a semiconductor wafer in a mechanism.
JP25713989A 1989-10-03 1989-10-03 Method for removing semiconductor wafer in chucking mechanism Granted JPH03120718A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25713989A JPH03120718A (en) 1989-10-03 1989-10-03 Method for removing semiconductor wafer in chucking mechanism

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25713989A JPH03120718A (en) 1989-10-03 1989-10-03 Method for removing semiconductor wafer in chucking mechanism

Publications (2)

Publication Number Publication Date
JPH03120718A true JPH03120718A (en) 1991-05-22
JPH0582053B2 JPH0582053B2 (en) 1993-11-17

Family

ID=17302260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25713989A Granted JPH03120718A (en) 1989-10-03 1989-10-03 Method for removing semiconductor wafer in chucking mechanism

Country Status (1)

Country Link
JP (1) JPH03120718A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11226864A (en) * 1998-02-13 1999-08-24 Showa Alum Corp Grinding device and grinding method for workpiece
JP2013145776A (en) * 2012-01-13 2013-07-25 Disco Abrasive Syst Ltd Transferring method
JP2014229828A (en) * 2013-05-24 2014-12-08 株式会社東京精密 Wafer polishing apparatus
CN105179443A (en) * 2015-08-31 2015-12-23 平凉市老兵科技研发有限公司 Open type sucking disc used for thinning machine
JP2016127195A (en) * 2015-01-07 2016-07-11 株式会社ディスコ Wafer grinding method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11226864A (en) * 1998-02-13 1999-08-24 Showa Alum Corp Grinding device and grinding method for workpiece
JP2013145776A (en) * 2012-01-13 2013-07-25 Disco Abrasive Syst Ltd Transferring method
JP2014229828A (en) * 2013-05-24 2014-12-08 株式会社東京精密 Wafer polishing apparatus
JP2016127195A (en) * 2015-01-07 2016-07-11 株式会社ディスコ Wafer grinding method
CN105179443A (en) * 2015-08-31 2015-12-23 平凉市老兵科技研发有限公司 Open type sucking disc used for thinning machine

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