JPS61167209A - 低雑音増幅器 - Google Patents

低雑音増幅器

Info

Publication number
JPS61167209A
JPS61167209A JP61004895A JP489586A JPS61167209A JP S61167209 A JPS61167209 A JP S61167209A JP 61004895 A JP61004895 A JP 61004895A JP 489586 A JP489586 A JP 489586A JP S61167209 A JPS61167209 A JP S61167209A
Authority
JP
Japan
Prior art keywords
noise amplifier
low noise
stage
series feedback
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61004895A
Other languages
English (en)
Japanese (ja)
Inventor
デビツド　デイー．ヘストン
ランドール　イー．レーマン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPS61167209A publication Critical patent/JPS61167209A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H03F3/1935—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/372—Noise reduction and elimination in amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Microwave Amplifiers (AREA)
  • Amplifiers (AREA)
JP61004895A 1985-01-14 1986-01-13 低雑音増幅器 Pending JPS61167209A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US691606 1985-01-14
US06/691,606 US4614915A (en) 1985-01-14 1985-01-14 Monolithic series feedback low noise FET amplifier

Publications (1)

Publication Number Publication Date
JPS61167209A true JPS61167209A (ja) 1986-07-28

Family

ID=24777221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61004895A Pending JPS61167209A (ja) 1985-01-14 1986-01-13 低雑音増幅器

Country Status (4)

Country Link
US (1) US4614915A (fr)
EP (1) EP0189597B1 (fr)
JP (1) JPS61167209A (fr)
DE (1) DE3587171T2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02143604A (ja) * 1988-11-25 1990-06-01 Nec Corp 超高周波増幅器

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4771247A (en) * 1987-09-24 1988-09-13 General Electric Company MMIC (monolithic microwave integrated circuit) low noise amplifier
US5070376A (en) * 1990-01-05 1991-12-03 Sumitomo Electric Industries, Ltd. Semiconductor device
US5274256A (en) * 1990-01-08 1993-12-28 Sumitomo Electric Industries, Ltd. Microwave FET
JPH03205835A (ja) * 1990-01-08 1991-09-09 Sumitomo Electric Ind Ltd マイクロ波ｆｅｔ
US5222246A (en) * 1990-11-02 1993-06-22 General Electric Company Parallel amplifiers with combining phase controlled from combiner difference port
ES2065221B1 (es) * 1992-04-23 1995-10-16 Univ Madrid Complutense Procedimiento para diseñar un amplificador de microondas con especificaciones determinadas de perdidas por reflexiones, figura de ruido y ganancia de transduccion.
US5760650A (en) * 1994-09-26 1998-06-02 Endgate Corporation Coplanar waveguide amplifier
JPH0964758A (ja) * 1995-08-30 1997-03-07 Matsushita Electric Ind Co Ltd ディジタル携帯無線機の送信装置とそれに用いる高周波電力増幅装置
US6498535B1 (en) * 2000-06-28 2002-12-24 Trw Inc. High dynamic range low noise amplifier
US6683499B2 (en) * 2000-12-27 2004-01-27 Emhiser Research, Inc. Divided-voltage fet power amplifiers
CN1656674A (zh) * 2002-05-22 2005-08-17 皇家飞利浦电子股份有限公司 Rf功率放大器
US7053717B2 (en) * 2003-10-14 2006-05-30 M/A-Com, Inc. Method and apparatus for realizing a low noise amplifier
TWI325222B (en) * 2006-09-19 2010-05-21 Univ Nat Taiwan Feedback unilateralized power amplifier and method thereof
US11336247B1 (en) * 2021-10-29 2022-05-17 ENGIN-IC, Inc. High efficiency wideband feedback amplifier

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3869677A (en) * 1973-10-18 1975-03-04 Rca Corp Microwave transistor carrier for common base class a operation
US4092664A (en) * 1976-02-17 1978-05-30 Hughes Aircraft Company Carrier for mounting a semiconductor chip
US4380022A (en) * 1980-12-09 1983-04-12 The United States Of America As Represented By The Secretary Of The Navy Monolithic fully integrated class B push-pull microwave GaAs MESFET with differential inputs and outputs with reduced Miller effect
EP0101174B1 (fr) * 1982-07-06 1986-10-22 Texas Instruments Incorporated Amplificateur monolithique à faible bruit à transistor à effet de champ avec montage à grille commune
US4525678A (en) * 1982-07-06 1985-06-25 Texas Instruments Incorporated Monolithic low noise common-gate amplifier

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES=1982 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02143604A (ja) * 1988-11-25 1990-06-01 Nec Corp 超高周波増幅器

Also Published As

Publication number Publication date
DE3587171D1 (de) 1993-04-15
US4614915A (en) 1986-09-30
EP0189597B1 (fr) 1993-03-10
EP0189597A1 (fr) 1986-08-06
DE3587171T2 (de) 1993-06-17

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