JPS61159739A - Detecting method for completion of washing of material to be washed - Google Patents
Detecting method for completion of washing of material to be washedInfo
- Publication number
- JPS61159739A JPS61159739A JP37285A JP37285A JPS61159739A JP S61159739 A JPS61159739 A JP S61159739A JP 37285 A JP37285 A JP 37285A JP 37285 A JP37285 A JP 37285A JP S61159739 A JPS61159739 A JP S61159739A
- Authority
- JP
- Japan
- Prior art keywords
- pure water
- washing
- cleaning
- washed
- tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 10
- 238000005406 washing Methods 0.000 title abstract 8
- 239000000463 material Substances 0.000 title abstract 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000003792 electrolyte Substances 0.000 claims abstract description 7
- 238000004140 cleaning Methods 0.000 claims description 34
- 238000001514 detection method Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体製造工程におけるウェハー等の被洗
浄物に被着した電解質を純水により洗浄する洗浄終了検
出方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a cleaning completion detection method for cleaning electrolyte deposited on an object to be cleaned, such as a wafer, with pure water in a semiconductor manufacturing process.
従来、マスクや半導体ウェハー、印刷配線基板等の被洗
浄物を洗浄する方法としては、槽内に収容した被洗浄物
を一定時間純水を通流して被洗浄物に付着している例え
ば硫酸や塩酸、フッ酸叫のＩＲ類あるいは現象液等のア
ルカリ類の電解質を洗い流すものや、バブリング（あわ
立て）、超音波等を用いたものがあった。Conventionally, as a method for cleaning objects to be cleaned such as masks, semiconductor wafers, printed wiring boards, etc., pure water is passed through the objects stored in a tank for a certain period of time to clean the objects, such as sulfuric acid, etc. There were methods that washed away alkaline electrolytes such as IR such as hydrochloric acid and hydrofluoric acid or phenomenon liquid, and methods that used bubbling, ultrasonic waves, etc.
しかしながら上記のような洗浄方法では被洗浄物の洗浄
度は洗浄の凡その時間や作業者の感にたよってい友ため
完全に電解質が除去されないうちに洗浄が終了すること
がある０このため洗浄後の工程の安定性に支障をきたし
、ま交充分な洗浄を行なって安全率を高めれば、純水の
消費を多く必要とする問題点があつ友。However, in the cleaning method described above, the degree of cleaning of the object to be cleaned depends on the approximate cleaning time and the operator's impressions, so cleaning may end before the electrolyte is completely removed. However, if the safety factor is increased by thorough cleaning, the problem arises that a large amount of purified water is required.
この発明は、以上述べた洗浄度の不確実性と必要以上の
純水の消費の問題点を除去し、効果的に電解質の除去を
行なえるようにした洗浄終了検出方法を提供することを
目的とする。The purpose of this invention is to provide a cleaning end detection method that eliminates the above-mentioned problems of uncertainty in cleaning degree and consumption of pure water more than necessary, and enables effective removal of electrolyte. shall be.
この発明における洗浄終了検出方法は、被洗浄物の洗浄
前の純水と洗浄後の純水との比抵抗値が設定値に達した
際に洗浄を終了するものである。The cleaning completion detection method according to the present invention is to terminate cleaning when the specific resistance value of the pure water before cleaning and the pure water after cleaning the object to be cleaned reaches a set value.
この発明の作用は、洗浄前と洗浄後との純水の比抵抗値
が設定値に達すると洗浄の終了若しくは限界を検出し、
この時点で純水の供給を停止すれば確実な洗浄と、最小
必要量の純水の供給ですむ。The function of this invention is to detect the end or limit of cleaning when the specific resistance value of pure water before and after cleaning reaches a set value,
If the supply of pure water is stopped at this point, reliable cleaning can be achieved and only the minimum required amount of pure water can be supplied.
図ｉｉ］はこの発明の方法を実施するための装置の概侠
因であって、１は洗浄槽で、ＷＩ１円に被洗浄物となる
マスク２ｔ−保持するキャリヤ３が収容されている。洗
浄槽１の低部には純水の供給管４が接続され、かつ檜ｌ
の上部に槽内をオーバフローレ几純水の排出Ｉｒ５が設
けである。上記供給管４に汀洗浄前の純水の抵抗値を検
知する抵抗計６が備えられ、排出管５に洗浄後の純水の
抵抗値を検知する抵抗計７が備えられ、コントローラ８
により両抵抗計６．７の比抵抗値を感知する。９はコン
トローラ８に連動し、供給管４′ｆｔ：開閉する友めの
電磁弁である。Fig. ii] shows a general outline of an apparatus for carrying out the method of the present invention, in which 1 is a cleaning tank, and a mask 2t to be cleaned and a carrier 3 for holding it are housed in WI1. A pure water supply pipe 4 is connected to the lower part of the cleaning tank 1, and
A drain Ir5 for overflowing the pure water inside the tank is provided at the top of the tank. The supply pipe 4 is equipped with a resistance meter 6 for detecting the resistance value of pure water before cleaning, the discharge pipe 5 is equipped with a resistance meter 7 for detecting the resistance value of pure water after cleaning, and the controller 8
Detect the specific resistance value of both resistance meters 6.7. Reference numeral 9 denotes a companion solenoid valve that opens and closes the supply pipe 4'ft in conjunction with the controller 8.
次に上記装置を参照して洗浄物の検出方法を説明する。Next, a method for detecting a washed object will be explained with reference to the above device.
まず、洗浄槽ｌ内にマスク２ｔ−保持したキャリヤ３を
収容し、供給管４よシ純水を槽１内に供給し、この純水
は槽１からあふれ出て排出管５へ排出させる。かくして
マスク２の洗浄が開始されるが、この時点では抵抗計６
と７との比抵抗値には差がでるため電磁弁９が開いて純
水が供給され続ける。やがて時間の経過に伴なってマス
ク２から電解質が除去されるので抵抗計６，７の比抵抗
値は除々に小さくなるか変化しなくなる。この時点が洗
浄の終了若しくは限界となりコントローラ８に設定した
設定値に違すると電磁弁９が閉じて洗浄を終了する。First, the carrier 3 holding the mask 2t is housed in the cleaning tank 1, and pure water is supplied into the tank 1 through the supply pipe 4, and this pure water overflows from the tank 1 and is discharged into the discharge pipe 5. In this way, cleaning of the mask 2 is started, but at this point, the resistance meter 6
Since there is a difference in the specific resistance values between the two, the electromagnetic valve 9 is opened and pure water continues to be supplied. As the electrolyte is removed from the mask 2 over time, the resistivity values of the resistance meters 6 and 7 gradually become smaller or do not change. This point is the end or limit of cleaning, and if the setting value set in the controller 8 is not met, the solenoid valve 9 closes and the cleaning ends.
純水の比抵抗は１５ＭΩ以上のものが用いられ、被洗浄
物を入れると数１０Ω〜数にΩ程度にまで比抵抗値が下
がる。例えば１５ＭΩの純水を用いた場合、１３ＭΩで
止めるとよく、これ以上比抵抗を低下させるには多量の
純水を必要とする。なお、高い洗浄度を必要とする場合
は１４０〜１５０程度で純水の供給を止めるようにコン
トローラ９の設定値全土ければよい。Pure water with a specific resistance of 15 MΩ or more is used, and when the object to be cleaned is added, the specific resistance value decreases to about several tens of Ω to several Ω. For example, if pure water of 15 MΩ is used, it is best to stop at 13 MΩ, and a large amount of pure water is required to further reduce the resistivity. In addition, if a high degree of cleaning is required, the controller 9 may be set at all values such that the supply of pure water is stopped at about 140 to 150.
その他この発明においては、予め純水の比抵抗を計って
おき、これをデータとして記憶器等に入力し、排出側の
比抵抗と上記データをコントローラにより比較するよう
にすれば供給側の抵抗針は不要となるが、供給側に抵抗
計ｔ−設ける利点は、事故等が発生して純水の純度が低
下した腺に検知することができる。In addition, in this invention, by measuring the resistivity of pure water in advance, inputting it as data into a memory device, etc., and comparing the resistivity on the discharge side with the above data by the controller, the resistance needle on the supply side can be measured. However, the advantage of providing a resistance meter on the supply side is that it can be detected in glands where the purity of pure water has decreased due to an accident or the like.
以上、説明したようにこの発明によれは、被洗浄物の洗
浄前と洗浄後との純水の比抵抗が設定値に達した際洗浄
を終了するようにしたので、被洗浄物の洗浄が確実に行
えると共に、必要以上に純水が消費されることもない等
の効果かめる０As explained above, according to the present invention, cleaning is completed when the specific resistance of pure water before and after cleaning the object to be cleaned reaches a set value, so that the object to be cleaned can be cleaned. It can be done reliably and has benefits such as not consuming more pure water than necessary.
図面はこの発明の方法を実施するための装置の概要図で
ある。
ｌ・・・洗浄槽、２・・・マスク、３・・・キャリヤ、
４・・・供給管、５・・・排出管、６．７・・・抵抗計
、８・・・コントローラ、９・・・電磁弁。
特許出願人 沖電気工業株式会社
１：；Ｊ７Ｃ，跨槽
２：マスク（ネ〃ンＩＬタ争オ勿）
４：イ教奪会管
５；朽ト土管
６．７：抵手九針
８：コントローラThe drawing is a schematic diagram of an apparatus for carrying out the method of the invention. l...Cleaning tank, 2...Mask, 3...Carrier,
4... Supply pipe, 5... Discharge pipe, 6.7... Resistance meter, 8... Controller, 9... Solenoid valve. Patent Applicant: Oki Electric Industry Co., Ltd. 1: J7C, straddle tank 2: Mask (Neil interlock) 4: Ikyokai pipe 5; Ruined earthen pipe 6.7: Resistance nine stitches 8: controller
Claims (1)
る方法において、被洗浄物の洗浄前の純水と洗浄後の純
水との比抵抗値が設定値に達した際に洗浄を終了するよ
うにしたことを特徴とする被洗浄物の洗浄終了検出方法
。In the method of cleaning the electrolyte adhered to the object to be cleaned by flowing pure water, cleaning is started when the specific resistance value of the pure water before cleaning the object to be cleaned and the pure water after cleaning reaches a set value. A method for detecting completion of cleaning of an object to be cleaned, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37285A JPS61159739A (en) | 1985-01-08 | 1985-01-08 | Detecting method for completion of washing of material to be washed |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP37285A JPS61159739A (en) | 1985-01-08 | 1985-01-08 | Detecting method for completion of washing of material to be washed |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61159739A true JPS61159739A (en) | 1986-07-19 |
Family
ID=11471957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP37285A Pending JPS61159739A (en) | 1985-01-08 | 1985-01-08 | Detecting method for completion of washing of material to be washed |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61159739A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01274435A (en) * | 1988-04-27 | 1989-11-02 | Japan Organo Co Ltd | Control apparatus for semiconductor-wafer cleaning water |
| JPH01312830A (en) * | 1988-06-10 | 1989-12-18 | Tokyo Electron Ltd | Cleaning |
| JPH02169077A (en) * | 1988-12-21 | 1990-06-29 | Dan Sangyo Kk | Bottle washing device |
| JPH0341729A (en) * | 1989-07-07 | 1991-02-22 | Tokyo Electron Ltd | Substrate cleaning |
| US7581551B2 (en) * | 2004-09-01 | 2009-09-01 | Sanyo Electric Co., Ltd. | Cleaning apparatus |
| WO2013021564A1 (en) * | 2011-08-09 | 2013-02-14 | 富士フイルム株式会社 | Photoelectric conversion element manufacturing method |
-
1985
- 1985-01-08 JP JP37285A patent/JPS61159739A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01274435A (en) * | 1988-04-27 | 1989-11-02 | Japan Organo Co Ltd | Control apparatus for semiconductor-wafer cleaning water |
| JPH01312830A (en) * | 1988-06-10 | 1989-12-18 | Tokyo Electron Ltd | Cleaning |
| JPH02169077A (en) * | 1988-12-21 | 1990-06-29 | Dan Sangyo Kk | Bottle washing device |
| JPH0341729A (en) * | 1989-07-07 | 1991-02-22 | Tokyo Electron Ltd | Substrate cleaning |
| US7581551B2 (en) * | 2004-09-01 | 2009-09-01 | Sanyo Electric Co., Ltd. | Cleaning apparatus |
| WO2013021564A1 (en) * | 2011-08-09 | 2013-02-14 | 富士フイルム株式会社 | Photoelectric conversion element manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR910007226B1 (en) | Developing method for resist pattern and developing devices using the same | |
| JPS61159739A (en) | Detecting method for completion of washing of material to be washed | |
| GB2323334A (en) | Wet etching glass with recycle of etchant and end-point sensing by temperature | |
| JP3128812B2 (en) | Wet etching equipment | |
| CN109604238A (en) | A kind of method for cleaning polycrystalline silicon and cleaning device | |
| JP2002096012A (en) | Device for treating substrate | |
| US6752897B2 (en) | Wet etch system with overflow particle removing feature | |
| JPH0845888A (en) | Pure water cleaning apparatus | |
| JPH11351943A (en) | Liquid surface defection device for buffered fluoric acid | |
| JPH06280054A (en) | Etching device | |
| JP2902757B2 (en) | Semiconductor wafer cleaning method | |
| US6150279A (en) | Reverse current gold etch | |
| JP2751930B2 (en) | Control device for cleaning water of semiconductor wafer | |
| JPH01184926A (en) | Cleaning device and cleaning method | |
| JPS6016427A (en) | Oxide film etching apparatus | |
| JPH08236494A (en) | Wafer cleaner and method of cleaning the same | |
| JP4703870B2 (en) | Contamination inspection method and inspection apparatus for used high-purity hydrogen peroxide solution filling container | |
| JPH01138721A (en) | Wet etching device | |
| JP3891776B2 (en) | Substrate processing equipment | |
| JPH0710356Y2 (en) | Photosensitive material processing equipment | |
| JPH10172947A (en) | Single tank-type cleaning method and device therefor | |
| KR200234232Y1 (en) | Wafer cleaning device | |
| JP3519603B2 (en) | Substrate processing equipment | |
| KR0133414Y1 (en) | Ph measuring apparatus for gathering water of a furnace | |
| JPH0737857A (en) | Treating liquid monitor |