JPS61159649A - Heat development controller - Google Patents

Heat development controller

Info

Publication number
JPS61159649A
JPS61159649A JP51985A JP51985A JPS61159649A JP S61159649 A JPS61159649 A JP S61159649A JP 51985 A JP51985 A JP 51985A JP 51985 A JP51985 A JP 51985A JP S61159649 A JPS61159649 A JP S61159649A
Authority
JP
Japan
Prior art keywords
resistance value
heating element
control circuit
constant
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51985A
Other languages
Japanese (ja)
Inventor
Kenji Nakauchi
健二 中内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP51985A priority Critical patent/JPS61159649A/en
Publication of JPS61159649A publication Critical patent/JPS61159649A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To hold the temperature of a heat development photosensitive material constant by providing a deviation detecting circuit for the deviation of the resistance value of the heat development photosensitive material from a specific resistance value and a control circuit for electric power supplied to a feed heating body according to the output of said circuit. CONSTITUTION:When the temperature of the feed heating body 1 is low and its resistance value Rt is smaller than a desired value, a phase control circuit 8 increases the firing angle of a triac 3 to increase the level of a current which flows through the feed heating body 1. When the temperature of the feed heating body 1 is high and its resistance value Rt is larger than the desired value, on the other hand, the firing angle of the triac 3 is decreased to decrease the current level. When an AC power source 2 is determined,a voltage V1 is constant, so when the resistance value Rt of the feed heating body 1 is held constant, a voltage V2 is also constant, and consequently the output voltage Vf of an operational amplifier 5 is held nearly as high as a reference voltage Vr.

Description

【発明の詳細な説明】 (発明の技術分野) この発明は1通電発熱体層が設けられた熱現像感光材を
常に一定温度で加熱現像できるようにした熱現像制御装
置に関する。
DETAILED DESCRIPTION OF THE INVENTION (Technical Field of the Invention) The present invention relates to a thermal development control device that is capable of heat-developing a photothermographic material provided with one current-carrying heat generating layer at a constant temperature.

(発明の技術的背景とその間甥点) 表面には感光層が形成されており、裏面には通電発熱体
層が設けられている熱現像感光材料が知られている。こ
のような熱現像感光材は画像露光を行なった後に、熱現
像!Itr+の2組の駆動ローラと押圧ローラとの間に
挟持されながらその間を搬送され、これらローラを介し
て熱現像感光材の通電発熱体に電圧が印加され、通電発
熱体が通電加熱されることにより熱現像され七ころで、
熱現像感光材の表面に設けられた通電発熱体の抵抗値R
は、第2図に示すように発熱温度Tに対して非線形に変
化する。一定の電圧を通電発熱体に印加しても周囲温度
が変化する場合や、熱現像感光材の含水峻っまり熱容量
が変化する場合等には、、SgL像感光材の加熱温度を
一定に保つという制御が困惣であった。
(Technical Background of the Invention and Other Points) A photothermographic material is known in which a photosensitive layer is formed on the front surface and an energized heating layer is provided on the back surface. Such heat-developable photosensitive materials undergo heat development after image exposure! Itr+ is conveyed while being sandwiched between two sets of drive rollers and pressing rollers, and a voltage is applied to the energized heating element of the photothermographic material through these rollers, so that the energized heating element is heated by energization. It was heat developed by
Resistance value R of the current-carrying heating element provided on the surface of the photothermographic material
changes non-linearly with respect to the heat generation temperature T, as shown in FIG. When the ambient temperature changes even when a constant voltage is applied to the heating element, or when the heat capacity of the heat-developable photosensitive material changes due to water content, the heating temperature of the SgL photosensitive material must be kept constant. It was difficult to control this.

従って、従来は熱現像装置において熱現像感光材の抵抗
イ^を一定に維持する制御は行なわれていなかった。
Therefore, in the past, no control was carried out to maintain the resistance of the heat-developable photosensitive material constant in a heat-developing apparatus.

(発明の目的) この発明は上述のような事情からなされたものであり、
この発明の目的は、熱現像感光材の通電発熱体の温度特
性を利用して常に熱現像感光材の抵抗値を一定に制御す
ることにより、熱現像感光材の温度を一定に保持できる
ようにした熱現像制御*iを提供することにある。
(Object of the invention) This invention was made under the above circumstances,
The purpose of this invention is to maintain the temperature of the photothermographic material at a constant level by always controlling the resistance value of the photothermographic material at a constant level using the temperature characteristics of the current-carrying heating element of the photothermographic material. The purpose of the present invention is to provide thermal development control*i that allows for improved thermal development control*i.

(発明の概要) この発明の熱現像制御ll装置は、熱現像感光材の通電
発熱体の抵抗値を検出してフィードバック制御すること
により1周囲温度の変化あるいは熱現像感光材の通電発
熱体の熱容量のバラツキに無関係に1通電発熱体の抵抗
値を一定に保持するようにし、これにより熱現像のため
の加熱温度を一定にして常に同一条件で熱現像できるよ
うにしている。
(Summary of the Invention) The heat development control device of the present invention detects the resistance value of the energized heating element of the heat-developable photosensitive material and performs feedback control to detect changes in ambient temperature or change the resistance of the energized heating element of the heat-developable photosensitive material. The resistance value of each energized heating element is kept constant regardless of variations in heat capacity, thereby making it possible to keep the heating temperature for heat development constant and to always perform heat development under the same conditions.

(発明の実施例) 第1図はこの発明の熱現像制御装置の実施例を示す図で
ある。
(Embodiment of the Invention) FIG. 1 is a diagram showing an embodiment of a heat development control device of the invention.

熱現像装置に装填され、熱現像されるべき熱現像感光材
の通電発熱体は抵抗R1,抵抗R2及び電界効果トラン
ジスタ4と共にブリッジ回路を構成するように接続され
ている0通電発熱体lは抵抗値Rtを有し、また電界効
果トランジスタ4のソース・ドレイン間抵抗をRfとす
る。そして、電界効果トランジスタ4は第3v!Jに示
すような電圧VF−抵抗Rfの特性を持っており、ブリ
ッジ回路が平衡状態にある場合にはR1@R2=Rt・
訂 が成立する。交流電源2が双方向性3端了サイリス
タつまりトチイアツク3を介して#述のブリッジ回路に
電力を供給するようになっており、トチイアツク3はゲ
ートGにゲートトリガ電流によって導通状態になる。従
って。
The current-carrying heating element of the heat-developable photosensitive material loaded in the thermal development apparatus and to be thermally developed is connected to form a bridge circuit with resistors R1, R2, and field effect transistor 4. The current-carrying heating element l is a resistor. It has a value Rt, and the source-drain resistance of the field effect transistor 4 is Rf. And the field effect transistor 4 is the 3rd v! It has the characteristic of voltage VF - resistance Rf as shown in J, and when the bridge circuit is in a balanced state, R1@R2=Rt・
The revision is established. The alternating current power supply 2 supplies power to the bridge circuit mentioned above through a bidirectional three-terminal thyristor, that is, a switch 3, which is made conductive to the gate G by a gate trigger current. Therefore.

トライアック3のゲートGに印加するパルス信号のパル
ス位相を調整すれば、トライアック3の点弧角つまり導
通角を調整です、トライアック3の主電極間を流れる電
流量を制御することができる。抵抗R1及び電界効果ト
ランジスタ4の接続点の電圧Vlと1通電発熱体l及び
抵抗R2の接続点の電圧v2とがそれぞれ演算増幅!1
5に入力されている。また、演算増幅!I5.基準電圧
源6及び比較!I7が偏差検出回路9を構成している。
By adjusting the pulse phase of the pulse signal applied to the gate G of the triac 3, the firing angle or conduction angle of the triac 3 can be adjusted, and the amount of current flowing between the main electrodes of the triac 3 can be controlled. The voltage Vl at the connection point between the resistor R1 and the field effect transistor 4 and the voltage V2 at the connection point between the 1-current heating element l and the resistor R2 are each operationally amplified! 1
5 is entered. Also, operational amplification! I5. Reference voltage source 6 and comparison! I7 constitutes the deviation detection circuit 9.

演算増幅315は線形に差動的に動作し、2つの入力電
圧vl及び入力電圧v2の差を求めた後これを増幅して
出力電圧Vfを与える。この出力電圧Vfは、電界効果
トランジスタ4のゲ−)Gに印加きれると共に、比較塁
7に入力されている。比較!!7は演算増幅器7の出力
電圧vfと基準電圧源6からの基準電圧Vrとを比較し
、X準電圧V【に対する出力電圧vfの偏差をtjえる
正または負の位相制御用の電圧vbを出力し1位相制御
回路8に入力している0位相制御回路8の出力PSはト
ライアック3のゲートGに帰還されている。
The operational amplifier 315 operates linearly and differentially, and after determining the difference between the two input voltages vl and input voltage v2, amplifies the difference to provide an output voltage Vf. This output voltage Vf is applied to the gate G of the field effect transistor 4 and is also input to the comparison base 7. Compare! ! 7 compares the output voltage vf of the operational amplifier 7 and the reference voltage Vr from the reference voltage source 6, and outputs a positive or negative phase control voltage vb that determines the deviation of the output voltage vf with respect to the The output PS of the 0-phase control circuit 8, which is input to the 1-phase control circuit 8, is fed back to the gate G of the triac 3.

このような構成において1位相制御回路8は偏差検出回
路9から…力される電圧vbの正あるいは負及びその大
きさに応じて、トライアック3の点弧位相角を制御する
出力信号PJを出力し、これをトライ7フク3のゲート
Gに帰還する。つまり1位相US回路8は、通電発熱体
lの温度が低くてその抵抗値Rtが所望値より小さい場
合には、トライア7り3の点弧角を大きくして通電発熱
体lを流れる電流量を増加させ。
In such a configuration, the 1-phase control circuit 8 outputs an output signal PJ for controlling the firing phase angle of the triac 3 according to the positive or negative value and magnitude of the voltage vb inputted from the deviation detection circuit 9. , this is returned to gate G of Try 7 Fuku 3. In other words, in the one-phase US circuit 8, when the temperature of the current-carrying heating element l is low and its resistance value Rt is smaller than a desired value, the firing angle of the trier 7 is increased to increase the amount of current flowing through the current-carrying heating element l. increase.

逆に通電発熱体lの温度が高くてその抵抗(1Rtが所
望値より大きい場合には、トライアック3の点弧角を小
さくし電流量を減少させる。電圧Vlは交流電源2が決
まれば一定であるから1通電発熱体lの抵抗値Rtが一
定に保持されると電圧v2も一定となり、その結果演算
増幅器5の出力電圧vrも基準電圧Vrにほぼ等しく保
持されるようになる。従って、熱現像感光材1の加熱温
度は基準電圧Vrに対応した温度の保持され、その加熱
温度を変更する場合には、基準電圧Vrの偵を変更すれ
ば良い。
Conversely, if the temperature of the energizing heating element 1 is high and its resistance (1Rt) is larger than the desired value, the firing angle of the triac 3 is made smaller and the amount of current is reduced.The voltage Vl remains constant once the AC power source 2 is determined. Therefore, if the resistance value Rt of the energized heating element l is held constant, the voltage v2 will also be held constant, and as a result, the output voltage vr of the operational amplifier 5 will also be held approximately equal to the reference voltage Vr. The heating temperature of the developing photosensitive material 1 is maintained at a temperature corresponding to the reference voltage Vr, and when changing the heating temperature, the value of the reference voltage Vr may be changed.

(発明の効果) この発明の熱現像制御装置は、熱現像感光材の周囲温度
が変化したりあるいは熱現像感光材の含水量が変化して
も、熱現像感光材を常に一定温度で加熱することが可能
であり、熱現像画質を向上できるという効果を奏する。
(Effects of the Invention) The heat development control device of the present invention always heats the photothermographic material at a constant temperature even if the ambient temperature of the photothermographic material changes or the water content of the photothermographic material changes. This has the effect of improving the thermal development image quality.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の熱現像制御装置の一実施例を示す図
、第2図は熱現像感光材の抵抗一温度特性の例を示す図
、第3図は電界位効果トランジスタの特性例を示す図で
ある。 !・・・通電発熱体、2・・・交流電源、3・・・双方
向性3端子サイリスク、4・・・電界効果トランジスタ
、5・・・y4算増幅器、6・・・基準電圧源、7・・
・比較審、8・・・位相制御回路、9・・・偏差検出回
路。
FIG. 1 is a diagram showing an embodiment of the heat development control device of the present invention, FIG. 2 is a diagram showing an example of the resistance-temperature characteristics of a heat-developable photosensitive material, and FIG. 3 is a diagram showing an example of the characteristics of a field effect transistor. FIG. ! ... Current-carrying heating element, 2 ... AC power supply, 3 ... Bidirectional 3-terminal sirisk, 4 ... Field effect transistor, 5 ... Y4 arithmetic amplifier, 6 ... Reference voltage source, 7・・・
- Comparison judge, 8... Phase control circuit, 9... Deviation detection circuit.

Claims (3)

【特許請求の範囲】[Claims] (1)通電発熱体層が設けられた熱現像感光材の通電発
熱体に電力を供給する電源と、所定の抵抗値に対する熱
現像感光材の抵抗値の偏差を検出する偏差検出回路と、
この偏差検出回路の出力に応じて前記通電発熱体に供給
する電力を制御する電力制御回路とを具えたことを特徴
とする熱現像制御装置。
(1) a power supply that supplies power to the current-carrying heating element of the heat-developable photosensitive material provided with the current-carrying heat-generating layer; a deviation detection circuit that detects the deviation of the resistance value of the photothermographic material from a predetermined resistance value;
A thermal development control device comprising: a power control circuit that controls power supplied to the energizing heating element in accordance with the output of the deviation detection circuit.
(2)前記電力制御回路が前記電源に直列に接続された
双方向性3端子サイリスタと、該双方向性3端子サイリ
スタの点弧角を制御する位相制御回路から成ることを特
徴とする特許請求の範囲第1項記載の熱現像制御装置。
(2) A patent claim characterized in that the power control circuit comprises a bidirectional three-terminal thyristor connected in series to the power source, and a phase control circuit that controls the firing angle of the bidirectional three-terminal thyristor. The thermal development control device according to item 1.
(3)前記偏差検出回路が、前記通電発熱体を含むブリ
ッジ回路の出力電圧差をとって増幅する演算増幅器と、
所定の基準電圧を与える基準電圧源と、前記基準電圧に
対する前記出力電圧差の偏差を検出し、前記電力制御回
路に出力する比較器とから成ることを特徴とする特許請
求の範囲第1項記載の熱現像制御装 置。
(3) an operational amplifier in which the deviation detection circuit takes and amplifies an output voltage difference of a bridge circuit including the energized heating element;
Claim 1, characterized in that it comprises a reference voltage source that provides a predetermined reference voltage, and a comparator that detects a deviation of the output voltage difference from the reference voltage and outputs it to the power control circuit. Thermal development control device.
JP51985A 1985-01-07 1985-01-07 Heat development controller Pending JPS61159649A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51985A JPS61159649A (en) 1985-01-07 1985-01-07 Heat development controller

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51985A JPS61159649A (en) 1985-01-07 1985-01-07 Heat development controller

Publications (1)

Publication Number Publication Date
JPS61159649A true JPS61159649A (en) 1986-07-19

Family

ID=11476015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51985A Pending JPS61159649A (en) 1985-01-07 1985-01-07 Heat development controller

Country Status (1)

Country Link
JP (1) JPS61159649A (en)

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