JPS6115770U - 3-beam semiconductor laser device - Google Patents

3-beam semiconductor laser device

Info

Publication number
JPS6115770U
JPS6115770U JP10090284U JP10090284U JPS6115770U JP S6115770 U JPS6115770 U JP S6115770U JP 10090284 U JP10090284 U JP 10090284U JP 10090284 U JP10090284 U JP 10090284U JP S6115770 U JPS6115770 U JP S6115770U
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser device
beam semiconductor
laser element
case
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10090284U
Other languages
Japanese (ja)
Inventor
忍 甲谷
Original Assignee
三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP10090284U priority Critical patent/JPS6115770U/en
Publication of JPS6115770U publication Critical patent/JPS6115770U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】 第1図は本考案の半導体レーザ装置及び従来の半導体レ
ーザ装置を示す断面図、第2図は本実施例半導体レーサ
装置を用いた光学系の構成を示す模式図、第3図は従来
の半導体レーザ装置を用いた光学系の構成を示す模式図
である。 2・・・ケース、3・・・開口、7・・・半導体レーザ
素子、22・・・回折格子。
[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a sectional view showing the semiconductor laser device of the present invention and a conventional semiconductor laser device, and FIG. 2 is a schematic diagram showing the configuration of an optical system using the semiconductor laser device of the present embodiment. FIG. 3 is a schematic diagram showing the configuration of an optical system using a conventional semiconductor laser device. 2... Case, 3... Aperture, 7... Semiconductor laser element, 22... Diffraction grating.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体レーザ素子、該半導体レーサ素子を収納すると共
に上記半導体レーザ素子から発せられるレーザ光を外部
に出射せしめるための開口を有するケース、上記開口を
塞ぐように配設された回折格子を具備したことを特徴と
するビーム用半導体レーザ装置。
A case comprising a semiconductor laser element, a case that houses the semiconductor laser element and has an opening for emitting laser light emitted from the semiconductor laser element to the outside, and a diffraction grating arranged so as to close the opening. Features of the beam semiconductor laser device.
JP10090284U 1984-07-04 1984-07-04 3-beam semiconductor laser device Pending JPS6115770U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10090284U JPS6115770U (en) 1984-07-04 1984-07-04 3-beam semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10090284U JPS6115770U (en) 1984-07-04 1984-07-04 3-beam semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS6115770U true JPS6115770U (en) 1986-01-29

Family

ID=30660344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10090284U Pending JPS6115770U (en) 1984-07-04 1984-07-04 3-beam semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6115770U (en)

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