JPS6115721U

JPS6115721U - High frequency LC circuit element

Info

Publication number: JPS6115721U
Application number: JP10035284U
Authority: JP
Inventors: 良彦芦田; 容平石川
Original assignee: 株式会社村田製作所
Priority date: 1984-07-02
Filing date: 1984-07-02
Publication date: 1986-01-29

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of the drawing]

第１図は、この考案の一実施例の斜視図である。第２図は、第１図に示す実施例の底面図である。第３図は、第１図の線■−■に沿う切断面端面図である
。第４図は、第１図に示す実施例の等価回路図である。第５図は、第１図に示す実施例′に生じる磁束を説明す
るための図である。第６図は、コンデンサ用導電膜とインダクタンス用導電
膜の好ましい配列例を示す平面図である。第７図は、この考案の他の実施例を示す平面図である。第８図および第９図は、第７図に示す実施例の等価回路
図である。第１０図はローパスフィルタの等価回路図である。第１１図および第１２図は、共に、従来のローパスフィ
ルタの＝例を示す斜視図である。図において、１は誘電体基板、２はコンデンサ用の導電
膜、８はローパスフィルタ、９，９ａ，９ｂｔ９ｃｔ
９ｄは透孔、１０，１０ａ，１０ｂ，Ｉｎｃまインダ
クタンス用導電膜を示す。FIG. 1 is a perspective view of an embodiment of this invention. FIG. 2 is a bottom view of the embodiment shown in FIG. 1. FIG. 3 is a cross-sectional end view taken along the line ■--■ in FIG. 1. FIG. 4 is an equivalent circuit diagram of the embodiment shown in FIG. 1. FIG. 5 is a diagram for explaining the magnetic flux generated in the embodiment ' shown in FIG. FIG. 6 is a plan view showing a preferred arrangement example of a conductive film for a capacitor and a conductive film for an inductance. FIG. 7 is a plan view showing another embodiment of this invention. 8 and 9 are equivalent circuit diagrams of the embodiment shown in FIG. 7. FIG. 10 is an equivalent circuit diagram of a low-pass filter. 11 and 12 are both perspective views showing examples of conventional low-pass filters. In the figure, 1 is a dielectric substrate, 2 is a conductive film for a capacitor, 8 is a low-pass filter, 9, 9a, 9bt 9ct
9d indicates a through hole, and 10, 10a, 10b, Inc. indicate a conductive film for inductance.

Claims

[Scope of utility model registration request]

(1) In a high frequency ratio circuit element configured by forming a conductive film for a capacitor on the surface of a dielectric substrate and connecting an inductance element to the conductive film for the capacitor, the inductance element is formed on the dielectric substrate. 1. A high frequency ratio circuit element, characterized in that a through hole is formed in the substrate, and a conductive film for inductance is formed around the front and back surfaces of a substrate through the through hole.

(2) The high frequency device according to claim 1 of the utility model registration claim, wherein at least two inductance elements are formed and the inductance elements formed at adjacent positions are connected to cause mutual induction. Pressure circuit element.