JPS61155830A - Pressure transducer - Google Patents
Pressure transducerInfo
- Publication number
- JPS61155830A JPS61155830A JP27613784A JP27613784A JPS61155830A JP S61155830 A JPS61155830 A JP S61155830A JP 27613784 A JP27613784 A JP 27613784A JP 27613784 A JP27613784 A JP 27613784A JP S61155830 A JPS61155830 A JP S61155830A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- sensitive element
- envelope
- semiconductor pressure
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0627—Protection against aggressive medium in general
- G01L19/0645—Protection against aggressive medium in general using isolation membranes, specially adapted for protection
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、圧力を電気信号に変換する半導体感圧素子を
有する圧力変換器に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a pressure transducer having a semiconductor pressure-sensitive element that converts pressure into an electrical signal.
この種の圧力変換器は第３図に示すように構成されてい
る。This type of pressure transducer is constructed as shown in FIG.
１は中心部が肉薄に形成された半導体感圧素子で、その
−面には拡散によって複数のピエゾ抵抗層２が形成され
ている。また、この半導体感圧素子１は、中心に導圧孔
を有する環状部材３及びこの環状部材３の導圧孔と連通
する導圧孔を有する筒状部材４とからなる支持部材に支
持されている。この筒状部材４は、断面コ字状の外囲器
５に形成された孔部に貫通支持されている。この外囲器
５と筒状部材４とは、絶縁部材６により固着されている
。また、この外囲器５には、前記半導体感圧素子１のピ
エゾ抵抗層２に接続されたワイヤ７に接続されるリード
線８が取着されている。このリード線８は、ｌｆｉ前記
ピエゾ抵抗層２からの電気信号を外部へ取り出すための
もので、前記外囲器５に絶縁層９を介して固着されてい
る。また、前記外囲器５の前記ワイヤ７接続側には、導
圧孔を有する環状のカバー１０が取着されている。Reference numeral 1 denotes a semiconductor pressure-sensitive element having a thin center portion, and a plurality of piezoresistive layers 2 are formed on the negative side thereof by diffusion. The semiconductor pressure-sensitive element 1 is supported by a support member consisting of an annular member 3 having a pressure-guiding hole in the center and a cylindrical member 4 having a pressure-guiding hole communicating with the pressure-guiding hole of the annular member 3. There is. This cylindrical member 4 is supported through a hole formed in an envelope 5 having a U-shaped cross section. The envelope 5 and the cylindrical member 4 are fixed together by an insulating member 6. Further, a lead wire 8 is attached to the envelope 5 to be connected to a wire 7 connected to the piezoresistive layer 2 of the semiconductor pressure-sensitive element 1. This lead wire 8 is for taking out an electric signal from the piezoresistive layer 2 to the outside, and is fixed to the envelope 5 via an insulating layer 9. Further, an annular cover 10 having a pressure guiding hole is attached to the wire 7 connection side of the envelope 5.
さらに、この外囲器５は、ケース１１に取着されている
。このケース１１には、受圧ダイアフラム１２が取着さ
れており、この受圧ダイアフラム１２．ケース１ノ、外
囲器５．支持部材及び半導体感圧素子１により形成され
た空間には、圧力伝達媒体１３が封入されている。なお
。Furthermore, this envelope 5 is attached to a case 11. A pressure receiving diaphragm 12 is attached to this case 11, and this pressure receiving diaphragm 12. Case 1, envelope 5. A pressure transmission medium 13 is enclosed in a space formed by the support member and the semiconductor pressure sensitive element 1. In addition.
１４は、プリント配線板で、前記リード線８゜ワイヤ７
を介して前記ピエゾ抵抗層２からの電気信号出力部を構
成している。14 is a printed wiring board, and the lead wire 8° wire 7
An electrical signal output section from the piezoresistive layer 2 is configured through the piezoresistive layer 2.
ｊＩ４図は、このように構成された圧力変換器の回路構
成を示すもので、１６，１１は前記ピエゾ抵抗層２を示
している。この抵抗１６゜１７はダミー抵抗Ｉｌｌ、１
９とによりホイートストンブリッジ回路を形成している
。この抵抗Ｊ６とダミー抵抗１８との接続点及び抵抗１
７とダミー抵抗１９との接続点には、入力電圧ＶＩＮが
供給されている。また、抵抗１６゜１７の接続点及びダ
ミー抵抗１８．１９の接続点からは、出力電圧ＶＯＴＪ
Ｔが取出される。この入力電圧ＶＩＮの供給及び出力電
圧Ｖ ＯＵＴの信号処理は、外部の信号処理回路により
行なわれるため１回路構成によってはブリッジ回路とア
ース間に電圧Ｖｃが印加される。Figure jI4 shows the circuit configuration of the pressure transducer constructed in this way, and 16 and 11 indicate the piezoresistive layer 2. This resistor 16°17 is a dummy resistor Ill, 1
9 form a Wheatstone bridge circuit. The connection point between this resistor J6 and dummy resistor 18 and resistor 1
The input voltage VIN is supplied to the connection point between the resistor 7 and the dummy resistor 19. In addition, from the connection point of the resistors 16 and 17 and the connection point of the dummy resistors 18 and 19, the output voltage VOTJ
T is taken out. The supply of input voltage VIN and the signal processing of output voltage VOUT are performed by an external signal processing circuit, so depending on the circuit configuration, voltage Vc is applied between the bridge circuit and ground.
このように構成され、前記受圧ダイアフラムに被測定圧
力Ｐが印加されると、圧力伝達媒体１３を介し前記半導
体感圧素子１に被測定圧力Ｐが加えられる。そして、こ
の被測定圧力Ｐに応じて０例えば前記抵抗１６はその抵
抗値を増大させ、抵抗Ｊ７は減少させるように変化し。With this configuration, when the pressure to be measured P is applied to the pressure receiving diaphragm, the pressure to be measured P is applied to the semiconductor pressure sensitive element 1 via the pressure transmission medium 13. Then, depending on the measured pressure P, the resistance value of the resistor 16 increases and the resistance value of the resistor J7 decreases.
この抵抗値変化が出力電圧ＶＯＵＴとして出力され、被
測定圧力Ｐに応じた電気信号が取出される。This change in resistance value is output as an output voltage VOUT, and an electrical signal corresponding to the pressure P to be measured is extracted.
しかしながら、このよう（二構成された圧力変換器では
、前記外囲器５及びケース１）が図示しない導圧管を介
してアースに接続され、また前記感圧賽子１のピエゾ抵
抗層２以外の部分はその抵抗層２からの電流漏洩を防止
するためにブリッジ回路の最高電位に接続されているた
め。However, in a pressure transducer with two configurations, the envelope 5 and the case 1 are connected to the ground via a pressure impulse tube (not shown), and the portions of the pressure dice 1 other than the piezoresistive layer 2 are is connected to the highest potential of the bridge circuit to prevent current leakage from the resistance layer 2.
感圧素子と外囲器５及びケース１１との間に電圧Ｖｃが
生じることとなる。この電圧Ｖｃが大きくなると、前記
圧力伝達媒体１３中のイオンが移動し、その結果、前記
感圧素子１面上に時間経過とともに電荷が移動するため
、ブリッジ回路の出力電圧ＶｏυＴが時間とともに変化
するという欠点がある。A voltage Vc will be generated between the pressure sensitive element and the envelope 5 and case 11. When this voltage Vc increases, ions in the pressure transmission medium 13 move, and as a result, charges move onto the surface of the pressure sensitive element 1 over time, so the output voltage VoυT of the bridge circuit changes over time. There is a drawback.
本発明は、ブリッジ回路の出力電圧Ｖｏυτの時間的変
化を低減した圧力変換器を提供するものである。The present invention provides a pressure transducer in which temporal changes in the output voltage Voυτ of a bridge circuit are reduced.
本発明は、外囲器を半導体感圧素子を保持する保持体及
びケースから絶縁するととも（；この外囲器：：任意の
電位を印加して半導体感圧素子面上に電荷が蓄積されな
いように構成し、圧力＆ｌ１１ａｌ力の時間的変化を低
減したものである。The present invention insulates the envelope from the holder and case that holds the semiconductor pressure-sensitive element, and also prevents charge from being accumulated on the surface of the semiconductor pressure-sensitive element by applying an arbitrary potential to the envelope. This structure reduces temporal changes in pressure and force.
本発明の一実施例につき第１図及び第２図を参照して説
明する。An embodiment of the present invention will be described with reference to FIGS. 1 and 2.
２１は環状の半導体、感圧素子で、中央部を肉薄にした
断面凹形に形成、されている。この半導体感圧素子２１
の平板状面には、ピエゾ抵抗層２２が拡散により形成さ
れている。このピエゾ抵抗層２２は、半導体感圧素子２
１が受圧してたわんだ状態で相反する抵抗値変化を示す
少なくとも２つ以上形成されている。また、この半導体
感圧素子２１は、環状部材２３．筒状部材２４からなる
保持体に支持固定されている。この環状部材２３及び筒
状部材２４は、夫々連通する導圧孔を有し、 １ｊｔｌ
記半導体感圧素子２１の凹部側への圧力導入な可能にし
ている。また。Reference numeral 21 denotes a ring-shaped semiconductor pressure-sensitive element, which is formed to have a concave cross section with a thinner central portion. This semiconductor pressure sensitive element 21
A piezoresistive layer 22 is formed on the flat plate-like surface by diffusion. This piezoresistive layer 22 is connected to the semiconductor pressure sensitive element 2.
At least two or more are formed that exhibit contradictory changes in resistance value when 1 is bent under pressure. Further, this semiconductor pressure sensitive element 21 has an annular member 23. It is supported and fixed to a holder made of a cylindrical member 24. The annular member 23 and the cylindrical member 24 each have a communicating pressure hole, and 1jtl
This makes it possible to introduce pressure into the concave side of the semiconductor pressure-sensitive element 21. Also.
この筒状部材２４は、環状の外囲器２５に取着されてい
る。すなわち、この筒状部材は、外囲器２５の中心に開
孔された孔部にその孔部を貫通しガラス等の絶縁部材２
６により固着されている。This cylindrical member 24 is attached to an annular envelope 25. That is, this cylindrical member passes through a hole formed in the center of the envelope 25 and is inserted into an insulating member 2 such as glass.
It is fixed by 6.
また、この外囲器２５は、その外縁部には。Moreover, this envelope 25 has a structure at its outer edge.
軸方向に貫通してリード線２８が絶縁層２９により固着
されている。このリード線２８の一端は、前記ピエゾ抵
抗層２２にワイヤ２７を介して接続されている。また、
他端は、印刷配線板３０に取着されている。A lead wire 28 is fixed by an insulating layer 29 passing through it in the axial direction. One end of this lead wire 28 is connected to the piezoresistive layer 22 via a wire 27. Also,
The other end is attached to a printed wiring board 30.
また、この外囲器２５は、環状の絶縁材よりなる接続部
材３ノを介して筒状のケース３２に取着されている。こ
のケース３２．接続部材３１、外囲器２５．支持部材及
び半導体感圧素子２１はすべて同心的に接続されている
。また。Further, this envelope 25 is attached to a cylindrical case 32 via a connecting member 3 made of an annular insulating material. This case 32. Connection member 31, envelope 25. The support member and the semiconductor pressure sensitive element 21 are all concentrically connected. Also.
ケース３２の一方の開口は、受圧ダイアフラム３３Ｉ−
より閉塞されている。この受圧ダイアフラム３３．ケー
ス３２．接続部材３ノ、支持部材及び半導体感圧素子２
１とにより密閉された空間が形成され、その空間内ζ：
は圧力伝達媒体３４が封入されている。One opening of the case 32 is connected to a pressure receiving diaphragm 33I-
It's more occluded. This pressure receiving diaphragm 33. Case 32. Connection member 3, support member and semiconductor pressure sensitive element 2
A sealed space is formed by 1, and within that space ζ:
A pressure transmission medium 34 is enclosed.
また、前記外囲器２５には、前記印刷配線板３０の任意
の電位点に接続されたリード線３６が接続されている。Further, a lead wire 36 connected to an arbitrary potential point of the printed wiring board 30 is connected to the envelope 25.
すなわち、この外囲器２５は、筒状部材２４からは絶縁
部材２６により。That is, this envelope 25 is connected to the cylindrical member 24 by the insulating member 26.
リード線２８からは絶縁層２９により、またケース３２
からは接続部材３ノにより絶縁された状態で任意の電位
に保持されている。The lead wire 28 is connected to the case 32 by an insulating layer 29.
It is held at an arbitrary potential while being insulated from the connecting member 3.
なお１図中３５は前記外囲器２５に取着されたカバーで
ある。このカバー３５を導電材料で形成することにより
、前記感圧素子２ノは任意の所定電位となるカバー３５
及び外囲器２５で囲まれた空間内に位置することになる
。Note that 35 in FIG. 1 is a cover attached to the envelope 25. By forming the cover 35 with a conductive material, the pressure sensitive element 2 can be at any predetermined potential.
and is located in a space surrounded by the envelope 25.
第２図は、このように構成された一実施例の回路構成を
示すもので、抵抗４１．４２は互いに逆特性を示す前記
ピエゾ抵抗Ｎ２２を示している。この抵抗４１．４２は
、ダミー抵抗４３゜４４とによりホイートストレブリッ
ジ回路を構成している。この抵抗４１とダミー抵抗４３
との接続点Ａ及び抵抗４２とダミー抵抗４４との接続点
Ｂには、入力電圧■ＩＮが供給されている。また、抵抗
４１．４２の接続点Ｃ及びダミー抵抗４３．４４の接続
点りからは出力電圧７００丁が取出される。また１図中
Ｅ点は、前記外囲器２５との接続点で、前記ブリッジ回
路の最高電位より電圧ＶＡだけ高い電圧が印加されてい
る。また、接続点Ｆは％前記ケースとの接続点で、１１
７１記ブリッジ回路との間に電圧Ｖｃが印加され−てい
る。FIG. 2 shows the circuit configuration of one embodiment constructed in this way, and resistors 41 and 42 represent the piezoresistors N22 having mutually opposite characteristics. These resistors 41 and 42 and dummy resistors 43 and 44 constitute a Wheatstrabridge circuit. This resistor 41 and dummy resistor 43
The input voltage ■IN is supplied to the connection point A between the resistor 42 and the dummy resistor 44, and the connection point B between the resistor 42 and the dummy resistor 44. Further, 700 output voltages are taken out from the connection point C of the resistors 41 and 42 and the connection point of the dummy resistors 43 and 44. Further, point E in FIG. 1 is a connection point with the envelope 25, and a voltage higher than the highest potential of the bridge circuit by a voltage VA is applied thereto. In addition, the connection point F is the connection point with the case %, and is 11
A voltage Vc is applied between the bridge circuit and the bridge circuit No. 71.
このように構成され、受圧ダイアフラム３３に印加され
た被測定圧力Ｐは、圧力伝達媒体３４を介して半導体感
圧素子２ノのピエゾ抵抗２２の抵抗値変化として、ワイ
ヤ２７．リード線２８及び印刷配線板３０を介して外部
の信号処理回路へ供給されて測定される。With this configuration, the measured pressure P applied to the pressure-receiving diaphragm 33 is transmitted via the pressure transmission medium 34 as a resistance value change of the piezoresistor 22 of the semiconductor pressure-sensitive element 2 to the wire 27. The signal is supplied to an external signal processing circuit via the lead wire 28 and printed wiring board 30 for measurement.
ところで、前記外囲器２５は、筒状部材２４゜リード線
２８及びケース３２から絶縁され、かつ前記ブリッジ回
路の最高電位と同じかあるいは高い電圧ＶＡが印加され
ているため、圧力伝達媒体３４中のイオンが半導体感圧
素子２１上に蓄積されるのが防止される。よって、半導
体感圧素子２１の抵抗値変化すなわち出力電圧ｖｏｔｒ
’ｒは、電荷の蓄積による影響を受けることなく適正に
取出される。By the way, since the envelope 25 is insulated from the cylindrical member 24° lead wire 28 and the case 32, and a voltage VA that is the same as or higher than the highest potential of the bridge circuit is applied, the pressure transmission medium 34 is ions are prevented from accumulating on the semiconductor pressure sensitive element 21. Therefore, the resistance value change of the semiconductor pressure sensitive element 21, that is, the output voltage votr
'r is properly extracted without being affected by charge accumulation.
本発明は、このように構成したので、半導体感圧素子面
上の電荷の蓄積が防止され圧力検出出力の時間的変化が
低減されるという効果を奏する。With this configuration, the present invention has the advantage that accumulation of charge on the surface of the semiconductor pressure-sensitive element is prevented and temporal changes in pressure detection output are reduced.
、 第１図及び第２図は本発明の一実施例を説明゛する
ためのもので、第１図は構成図、第２図は回路図、第３
図及び＄４図は従来の圧力変換器を脱炉するためのもの
で、第３図は楡成図、第４図は回路図である。
２１・・・半導体感圧素子、２３・・・環状部材。
２４・・・筒状部材、２５・・・外囲器、３ノ・・・接
続部材、３２・・・ケース、３３・・・受圧ダイアフラ
ム。
出願人代理人 弁理士 鈴 江 武 彦第２図
第３図
第４図, Fig. 1 and Fig. 2 are for explaining one embodiment of the present invention, Fig. 1 is a configuration diagram, Fig. 2 is a circuit diagram, and Fig. 3 is a circuit diagram.
Figure 4 and Figure 4 are for de-furnacing a conventional pressure transducer, Figure 3 is a diagram of Yucheng, and Figure 4 is a circuit diagram. 21... Semiconductor pressure sensitive element, 23... Annular member. 24... Cylindrical member, 25... Envelope, 3... Connection member, 32... Case, 33... Pressure receiving diaphragm. Applicant's representative Patent attorney Takehiko Suzue Figure 2 Figure 3 Figure 4
Claims (2)
の半導体感圧素子を保持する保持体と、この保持体を絶
縁部材を介して支持固定するとともに前記半導体感圧素
子から電気信号を外部へ取出すための端子を有する外囲
器と、この外囲器が固定されたケースと、このケースと
前記外囲器とを電気的絶縁状態を保って固着する接続部
材と、この接続部材、ケース、受圧ダイアフラム、外囲
器及び半導体感圧素子で形成された密封空間内に封入さ
れ、前記受圧ダイアフラムへ印加される被測定圧力を前
記半導体感圧素子へ伝達する圧力伝達媒体とからなり、
前記外囲器が外部から任意の電位が供給される電気的接
続部を有することを特徴とする圧力変換器。(1) A semiconductor pressure-sensitive element that converts pressure into an electrical signal, a holder that holds the semiconductor pressure-sensitive element, and a holder that supports and fixes the holder via an insulating member and that receives electrical signals from the semiconductor pressure-sensitive element. An envelope having a terminal for taking it out to the outside, a case to which the envelope is fixed, a connecting member that securely connects the case and the envelope while maintaining an electrically insulated state, and this connecting member, A pressure transmitting medium is sealed in a sealed space formed by a case, a pressure receiving diaphragm, an envelope, and a semiconductor pressure sensitive element, and transmits a measured pressure applied to the pressure receiving diaphragm to the semiconductor pressure sensitive element,
A pressure transducer characterized in that the envelope has an electrical connection to which an arbitrary potential is supplied from the outside.
より高い電位に保持されたことを特徴とする特許請求の
範囲第１項記載の圧力変換器。(2) The pressure transducer according to claim 1, wherein the potential applied to the envelope is maintained at a higher potential than the position of the semiconductor pressure-sensitive element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27613784A JPS61155830A (en) | 1984-12-28 | 1984-12-28 | Pressure transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27613784A JPS61155830A (en) | 1984-12-28 | 1984-12-28 | Pressure transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61155830A true JPS61155830A (en) | 1986-07-15 |
| JPH0443225B2 JPH0443225B2 (en) | 1992-07-15 |
Family
ID=17565291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27613784A Granted JPS61155830A (en) | 1984-12-28 | 1984-12-28 | Pressure transducer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61155830A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5131400A (en) * | 1989-06-13 | 1992-07-21 | Colin Electronics Co., Ltd. | Pulse wave detecting apparatus |
-
1984
- 1984-12-28 JP JP27613784A patent/JPS61155830A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5131400A (en) * | 1989-06-13 | 1992-07-21 | Colin Electronics Co., Ltd. | Pulse wave detecting apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0443225B2 (en) | 1992-07-15 |
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