JPS61150285A - Wavelength conversion element - Google Patents

Wavelength conversion element

Info

Publication number
JPS61150285A
JPS61150285A JP59272426A JP27242684A JPS61150285A JP S61150285 A JPS61150285 A JP S61150285A JP 59272426 A JP59272426 A JP 59272426A JP 27242684 A JP27242684 A JP 27242684A JP S61150285 A JPS61150285 A JP S61150285A
Authority
JP
Japan
Prior art keywords
photo
emitting element
light emitting
light
photo transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59272426A
Other languages
Japanese (ja)
Other versions
JPH0756552B2 (en
Inventor
Kenichi Kasahara
健一 笠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP27242684A priority Critical patent/JPH0756552B2/en
Publication of JPS61150285A publication Critical patent/JPS61150285A/en
Publication of JPH0756552B2 publication Critical patent/JPH0756552B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
    • H01S5/0611—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors wavelength convertors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Chemical & Material Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To obtain the titled element small-sized having photo gains suitable for arraying, by providing the laminated structure consisting of a surface light emitting element and a photo transistor, and further constructing the whole so that the energy forbidden band width of the active region of the light emitting element and that of the base of the photo transistor are may be different from each other. CONSTITUTION:On photo irradiation to the photo transistor side, current flows to the series-connected light emitting element, leading to light emission. The wavelengths of incident light and emitted light can be varied by making the forbidden band wavelength of the photo transistor base different from that of the active layer of the light emitting element. The photo transistor and the light emitting element are made integral in the layer thickness direction and formed in proxity; therefore, the emitted light is partly absorbed to the base region of the photo transistor, and a positive feedback is effectively applied. As a result, the characteristic of differential gain generates between the incident light and the emitted light; use in this situation yields high photo gain. This process gives the titled element, compact, easy of production, having photo gains suitable for integration.

Description

【発明の詳細な説明】 （産業上の利用分野）パ 本発明は光信号処理や光情報処理システム等に於いて用
いられる波長変換素子に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a wavelength conversion element used in optical signal processing, optical information processing systems, and the like.

（従来技術とその問題点） 光の波長を別の異なる波長に変換する機能素子は、光交
撲や光コンビーータといった高度な光応用システムや多
機能、壺器を実現する上で欠くことのできないデバイス
である。波長変換機能を実現するには従来、光信号を受
光素子で受け、一度、電気信号に変えた後で再び発光素
子を駆動させることによって行なわれる。この方法では
一枚のウェハ上にモノリシック集積するには、発光・受
光素子や電子回路といった互いに異なる構造や形態を持
った素子を同時に形成するこきになるので製作が難かし
い。又、−素子当りの部品点数も多く、素子面積も大き
くなるので実装密度が減少する。(Prior art and its problems) Functional elements that convert the wavelength of light into different wavelengths are indispensable for realizing advanced optical application systems such as optical converters and optical converters, multi-functions, and pots. It is a device. Conventionally, the wavelength conversion function is achieved by receiving an optical signal with a light receiving element, converting it into an electrical signal, and then driving the light emitting element again. This method is difficult to manufacture because monolithic integration on a single wafer requires the simultaneous formation of elements with different structures and forms, such as light-emitting/light-receiving elements and electronic circuits. Furthermore, the number of components per element is large, and the area of the element is also large, resulting in a reduction in packaging density.

（発明の目的） 本発明は上記欠点に鑑みなされたものであり、小型でア
レイ化に適した光利得を有する波長変換素子を提供する
ことを目的とする。(Objective of the Invention) The present invention has been made in view of the above drawbacks, and an object of the present invention is to provide a wavelength conversion element that is small and has an optical gain suitable for array formation.

（発明の構成） 本発明になる波長変換機能子は、面発光素子とフォトト
ランジスタとから成る積層構造を備え、さらに、前記発
光素子の活性域のエネルギー禁制帯幅（Ｅｇ）と前記フ
ォトトランジスタのベースのエネルギー禁制帯幅が互い
に異なっている構成となっている。(Structure of the Invention) The wavelength conversion function element of the present invention has a laminated structure consisting of a surface emitting element and a phototransistor, and further includes an energy forbidden band (Eg) of an active region of the light emitting element and an energy gap of the phototransistor. The energy band gaps of the bases are different from each other.

（本発明の作用・原理） 本発明ではフォトトランジスタ（ｆｌｌｌに光が照射さ
れるとそれに伴ない直列に接続された発光素手に電流が
流れ発光する。電圧は発光素子、フォトトランジスタ間
に正の電圧をかけておくものとする。(Operation/principle of the present invention) In the present invention, when a phototransistor (flll) is irradiated with light, a current flows through the light emitting elements connected in series and emits light.The voltage is a positive voltage between the light emitting element and the phototransistor. The voltage shall be applied.

フォトトランジスタのベースと発光索子の活性１湯の禁
制帯波長ル異なるようにすると入射光と出射光の波長を
変えることができる。フォトトランジスタと発光素子と
は層厚方向に一体化し、近接して形成されているので発
光の一部はフォトトランジスタのベース領域に吸収され
、効率良く正帰還がかかる。その結果入射光と出射光と
の間に微分利得特性が生じ、その状態で使うと高い光利
得が得られる。By making the forbidden band wavelengths of the base of the phototransistor and the active metal of the light-emitting element different, the wavelengths of the incident light and the emitted light can be changed. Since the phototransistor and the light emitting element are integrated in the layer thickness direction and formed close to each other, part of the emitted light is absorbed into the base region of the phototransistor, and positive feedback is efficiently applied. As a result, a differential gain characteristic occurs between the incident light and the output light, and when used in this state, a high optical gain can be obtained.

（実施例） 第１図は本発明に係わる一実施例である。同図に於いて
、１】はｎ　−ＩｎＰから成る半導体基板、１２は同じ
ｎ−ＩｎＰ　（ｎ　＝　５　Ｘ　１０’）傭４、ｄ＝１
μｍ）から成るエミツタ層、１３はＰ　−ＩｎＧａＡｉ
Ｐ（λｇ＝１．３μｍ、　ｐ＝　２　Ｘ　１０”ｃｍ４
、ｄ　＝　０．１μｍ）から成るベース層、１４はｎ　
−ＩｎＰ（ｎ　＝　５　Ｘ　１０　”ｃｍ−”、ｄ＝１
μｍ）から成るコレクタ層、１５はこれもｎ−ＴｎＰ　
（ｎ　”　２　Ｘ　１０”（ｍ４、ｄ　＝　０．５μｍ
）から成るｎクラッド層、１６はアンドープＴｎＧａＡ
ｓＰ（λｇ＝１．２μｍ、　ｄ＝Ｑ、５μｍ）から成る
活性層、１７はｐ−ＴｎＰ（ｐ＝ｚｘｌｏ”、ｄ　＝　
０．５μｍ）から成るｎクラッド層、２０はｐ　−Ｉｎ
ＧａＡｓＰ　（λｇ＝１．１５μｍ、Ｐ＝　Ｉ　Ｘ　１
０”傭４、ｄ＝０．２μｍ）から成るコンタクト層、１
９はＺｎの拡散領域、１８１．１８２．ＩＲ３及び１８
４は電極である。第１図ではλ１ヤ１．３師、λ２；１
２μｍであり、波長λ、の光が波長λ、の光に変換され
る。発光量のうち５０チがフォトトランジスタ側に帰還
される。第２図は微分利得特性を示したものである。光
利得が急激に大きくなり飽和する入射光ｆＩｓはベース
の広がり抵抗Ｚこよるベース電位の低下が無視できなく
なる点で決まる。エミッタ領域の大きさは４０μｍφで
ある。微分利得を示す状態で使用した場合の光利得とし
て約１０ｄＢの光利得が得られる。上記実施例では発光
素子として発光ダイオードを用いたが、面発光型であれ
ば鴎の素子、例えば半導体レーザであってもよい。また
、上記実施例で示したものを複数Ｉ並設し、各フォトダ
イオード１．発光素子のＥｇを異ならしめることにより
稿々の波長変換ができる。(Example) FIG. 1 shows an example according to the present invention. In the figure, 1] is a semiconductor substrate made of n-InP, 12 is the same n-InP (n = 5 x 10') 4, d = 1
13 is P-InGaAi
P(λg=1.3μm, p=2×10”cm4
, d = 0.1 μm), 14 is n
-InP (n = 5 x 10 "cm-", d = 1
15 is also n-TnP
(n ” 2 X 10” (m4, d = 0.5μm
), 16 is undoped TnGaA
The active layer consists of sP (λg = 1.2 μm, d = Q, 5 μm), 17 is p-TnP (p = zxlo'', d =
0.5 μm), and 20 is p-In.
GaAsP (λg=1.15μm, P=I
A contact layer consisting of
9 is a Zn diffusion region, 181.182. IR3 and 18
4 is an electrode. In Figure 1, λ1 is 1.3, and λ2 is 1.
2 μm, and light with wavelength λ is converted into light with wavelength λ. 50 out of the amount of light emitted is fed back to the phototransistor side. FIG. 2 shows differential gain characteristics. The incident light fIs, at which the optical gain suddenly increases and becomes saturated, is determined at the point where the drop in base potential due to the spread resistance Z of the base can no longer be ignored. The size of the emitter region is 40 μmφ. When used in a state showing differential gain, an optical gain of about 10 dB can be obtained. Although a light emitting diode was used as the light emitting element in the above embodiment, a surface emitting type element such as a semiconductor laser may be used. In addition, a plurality of photodiodes shown in the above embodiments are arranged in parallel, and each photodiode 1. Different wavelengths can be converted by varying the Eg of the light emitting elements.

（発明の効果） 以上のように本発明ではフォトダイオードと発光素子と
で積層構造を形成しているためコンパクトで作り易く集
積化に適した光利得を有する波長変換素子が得られる。(Effects of the Invention) As described above, in the present invention, since the photodiode and the light emitting element form a laminated structure, it is possible to obtain a wavelength conversion element that is compact, easy to manufacture, and has an optical gain suitable for integration.

【図面の簡単な説明】[Brief explanation of drawings]

Claims (1)

【特許請求の範囲】[Claims] 　面発光素子とフォトトランジスタとから成る積層構造
を備え、さらに、前記発光素子の活性域のエネルギー禁
制帯幅と前記フォトトランジスタのベースのエネルギー
禁制帯幅とが互いに異なっていることを特徴とする波長
変換素子。A wavelength band comprising a laminated structure consisting of a surface emitting element and a phototransistor, and further characterized in that an energy forbidden band width of an active region of the light emitting element and an energy forbidden band width of a base of the phototransistor are different from each other. conversion element.
JP27242684A 1984-12-24 1984-12-24 Wavelength conversion element Expired - Lifetime JPH0756552B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27242684A JPH0756552B2 (en) 1984-12-24 1984-12-24 Wavelength conversion element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27242684A JPH0756552B2 (en) 1984-12-24 1984-12-24 Wavelength conversion element

Publications (2)

Publication Number Publication Date
JPS61150285A true JPS61150285A (en) 1986-07-08
JPH0756552B2 JPH0756552B2 (en) 1995-06-14

Family

ID=17513743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP27242684A Expired - Lifetime JPH0756552B2 (en) 1984-12-24 1984-12-24 Wavelength conversion element

Country Status (1)

Country Link
JP (1) JPH0756552B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2667207A1 (en) * 1990-09-21 1992-03-27 Thomson Csf LIGHT FREQUENCY CONVERTER.
JPH10229250A (en) * 1997-02-14 1998-08-25 Fuji Xerox Co Ltd Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59977A (en) * 1982-06-25 1984-01-06 Sumitomo Electric Ind Ltd Bidirectional wavelength conversion element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59977A (en) * 1982-06-25 1984-01-06 Sumitomo Electric Ind Ltd Bidirectional wavelength conversion element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2667207A1 (en) * 1990-09-21 1992-03-27 Thomson Csf LIGHT FREQUENCY CONVERTER.
US5247168A (en) * 1990-09-21 1993-09-21 Thomson-Csf Light frequency converter having laser device connected in series with photodetector
JPH10229250A (en) * 1997-02-14 1998-08-25 Fuji Xerox Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPH0756552B2 (en) 1995-06-14

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