JPS61150227A - Semiconductor device - Google Patents

Abstract

PURPOSE:To enable to apply to many applications and many kinds of products, by face-down-bonding wiring pellets onto pellet mounting electrodes on a pellet mounting substrate or onto electrodes formed above circuit forming sections of a large pellet. CONSTITUTION:On the upper surface of a ceramic substrate 1 containing a principal ingredient of silicon carbide, a mother chip 3 made of silicon having many pellets 2 face-down-bonded is bonded with gold-silicon eutectic 4. On the upper periphery of the substrate 1, a frame 5 made of mullite is mounted with low melting-point glass 6. On the upper surface of the frame 5, a cap 7 made of mullite is mounted with low melting-point glass 6a to seal the interior hermetically. Moreover, the mother chip 3 has bonding pads formed around it, which are electrically connected through wires 9 with inside ends of leads 8 of which portions are embeded in the low melting-glass 5.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to wiring forming technology, and relates to a technology that is effective when applied to pellet mounting substrates or large pellet mounting substrates for semiconductor devices.

[Background technology]

As a multi-functional semiconductor device, there is a multi-chip module that is equipped with a so-called mother chip, in which multiple pellets are attached to a large wiring board.
It is explained in detail in the March 26, 1984 issue, pages 155-184.

The above-mentioned module is one in which a single semiconductor device is completed by mounting a large number of pellets, but most of the modules are common, and there are many cases where only a portion, for example, a logic circuit, is different. Therefore, there is an inconvenience that a wiring board for a module must be prepared even for a module in which a part of the solder has a different configuration.

Further, if a defect is found in a part of the wiring on the wiring board, there is also the inconvenience that the entire board must be replaced even if that part does not need to be used.

Other multi-functional semiconductor devices include ultra-highly integrated and compact semiconductor devices that are equipped with large pellets.

As a large pellet, for example, a so-called full wafer LSI that utilizes the entire surface of a wafer can be considered. Wafers are usually made of silicon single crystals, but it is extremely difficult to obtain large single crystals that are completely free of lattice defects.

Therefore, we formed multiple circuit blocks with the same size as a normal pellet, conducted a probe inspection to select only good blocks with no defects, and electrically connected the good blocks to create a completed pellet. It is possible to form a

In this case, the final wiring formation must be performed separately for each pellet depending on the location where the defective block occurs, resulting in a problem that the work is complicated and costs increase. was discovered by.

[Purpose of the invention]

An object of the present invention is to provide a technology that is effective when applied to changing or repairing the function of a semiconductor device, regarding a technology for forming wiring on a pellet mounting board or a large pellet.

Another object of the present invention is to provide a technique for changing or repairing the function of a semiconductor device at low cost.

The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

[Summary of the invention]

A brief overview of typical inventions disclosed in this application is as follows.

That is, by face-down bonding the wiring pellet to the pellet mounting electrode of the pellet mounting board or to the electrode formed above the circuit forming part of the large pellet, new wiring can be easily installed on the pellet mounting board or the large pellet. Since it can be formed into a shape, the above object is achieved.

[Embodiment 1] FIG. 1 is a partially enlarged sectional view of a semiconductor device according to Embodiment 1 of the present invention, and FIG. 2 is a sectional view of the semiconductor device of Embodiment 1 taken approximately at its center. It shows.

The semiconductor device of Example 1 is a so-called multi-chip module, and is made of, for example, a material whose main component is silicon carbide (hereinafter referred to as silicon carbide or silicon carbide substrate).
A mother chip 3 made of silicon, on which a large number of pellets 2 are bonded face-down, is bonded to the top surface of a ceramic substrate 1 made of silicon with gold-silicon eutectic 4, and the top surface of the substrate 1 is covered with mullite. A frame body 5 made of low melting point glass 6 is attached, and a camp 7 made of mullite is attached to the upper surface of the frame body 5 with a low melting point glass 6a.
The inside is hermetically sealed. Further, the mother chip 3 is a bonding pad formed on its Iil[ll[], and the low melting point glass 5
It is electrically connected via a wire 9 to the inner end of a lead 8 which is partially embedded and fixed in the wire 9 .

Note that the silicon carbide substrate 1 is manufactured by Japanese Patent Application Laid-open No. 57-2.
0.591 in silicon carbide.
It contains 1 to 3.5% by weight of helium and is made of ceramic formed by hot pressing.

This material has excellent electrical insulation and thermal conductivity, a coefficient of thermal expansion close to that of silicon, and high mechanical strength.

In the first embodiment, as shown in FIG. 1, a wiring pellet 9 having substantially the same shape as the pellet 2 is face-down bonded.

Inside the wiring pellet 9, only a predetermined wiring 11 for electrically connecting between bump electrodes 10 made of solder is formed, and no circuit is formed.

The mother chip 3 is formed on a silicon substrate 3a through an insulating layer 3b made of silicon oxide or the like, with one or more layers of wiring 12 electrically connected to pellet attachment electrodes 13 on the upper surface of the insulating layer. has been done.

The wiring 12 is electrically disconnected when the pellet 2 is not attached. Therefore, electrode 1
If even one part of 3 is left open, it will not be able to function as a semiconductor device.

If the wiring pellets 9 are used as in the first embodiment, even if the pellets 2 are not required at some locations due to the functionality of the semiconductor device, the mother chip 3 of the same type can be used.

Furthermore, by using a wiring pellet on which predetermined wiring 11 is formed, it is also possible to actively change the wiring on the mother chip and change the logic.

In other words, the semiconductor device of Example 1 can be used for a variety of purposes and a wide variety of products using the same type of mother chip, since electrical connections or wiring changes of the mother chip 3 can be freely performed by using the wiring pellet. It can correspond to

The above-mentioned measures can be easily achieved using a normal face-down bonding technique.

[Embodiment 2] FIG. 3 is a partially enlarged sectional view of a semiconductor device according to Embodiment 2 of the present invention, and FIG. 4 is a sectional view of the semiconductor device of Embodiment 2 taken approximately at the center thereof. It shows.

In the semiconductor device of Example 2, a large pellet of full wafer Si 20 is attached to the upper surface of a ceramic substrate 1 using gold-silicon eutectic 4.
A wiring pellet is attached to the top surface, and the other structure is the same as that of the first embodiment.

As shown enlarged in FIG. 3, the full wafer LS 114 includes a plurality of circuit blocks 14a and 14b.

14c is formed, and each block is electrically connected via a wiring 16 formed on an insulating layer 15 on the top surface of the wafer, and further connected to an electrode 17 formed on the top surface of the insulating layer 15. connected. As shown in the figure, a wiring pellet 9 is connected to this electrode 17 via a bump electrode 10, and a block 14aa14
It is electrically connected to c.

As explained above, by using wiring pellets, new wiring can be easily formed, so if the block 14b has a defect and you want to exclude the block 14b, you can use the normal face-down bonding technique. The purpose can be easily achieved.

The technology shown in Example 2 is not limited to the case where a defective block exists; instead, a plurality of blocks of the same type are formed by anticipating the occurrence of defects in advance, and some blocks are unnecessary because no defects actually occurred. The same applies to cases where .

In that case, it is necessary to avoid the influence of some unnecessary blocks or defective blocks, but this can be easily handled by providing an electrical block selection function in advance.

Further, in addition to the above purpose, it can also be used, for example, to change the logic of a full wafer LSI.

〔effect〕

(l) By face-down bonding the wiring pellet to the pellet mounting electrode of the pellet mounting board or to the electrode formed above the circuit forming part of the large pellet and electrically connected to the circuit, Since new wiring can be easily formed on the pellet mounting board or large pellet, it is possible to easily change or repair the function of a semiconductor device including the pellet mounting board or large pellet.

(21. By forming the pellet for wiring &?I as a pellet capable of face-down bonding, wiring can be formed by applying a normal pellet mounting technique.

(3), said f1. 1, one type of wiring board can be easily used for various purposes by simply using a wiring pellet on which predetermined wiring is formed.

(4) According to (1) above, it is possible to easily change the logic of the multi-chip module.

(5) With the above-mentioned ill, a semiconductor device mounted with a large pellet can be easily manufactured.

(6) With the above-mentioned il+, it is possible to easily change the logic of a semiconductor device equipped with a large pellet.

↓The invention made by the present inventor has been specifically explained based on Examples, but the present invention is not limited to the Examples and can be modified in various ways without departing from the gist thereof. It goes without saying.

For example, in LIT, the wiring of the wiring board is shown as a single layer, but it goes without saying that the wiring is not limited to this and may be two or three or more layers.

Regarding the wiring pellet, an example in which wiring is formed to connect opposing hump electrodes is shown, but it is not limited to this, and wiring may be formed in any combination. Not even.

Further, the materials used are not limited to those shown in the examples, but any material may be used as long as it can be used for the same purpose.

[Application field]

The above explanation has mainly been about the application of the invention made by the present inventor to a so-called flat package semiconductor device, which is the background field of application, but the invention is not limited thereto. This technique is effective when applied to any type of semiconductor device, such as a semiconductor device equipped with a large-sized Pereso I.

[Brief explanation of drawings]

1 is a partially enlarged cross-sectional view of a semiconductor device according to a first embodiment of the present invention, FIG. 2 is a cross-sectional view showing a semiconductor device according to a first embodiment of the present invention, and FIG. Enlarged cross-sectional view of a portion of a certain semiconductor device FIG. 4 is a cross-sectional view showing a semiconductor device of Example 2. 1... Group+L2... Hereso 1-13... Mother chip 1, 3a,... Silicon base material, 3b... Insulating layer, 4... Gold-silicon eutectic, 5...・Frame body, 6.6
a... Glass, 7... Camp, 8... Lead,
9... Wiring pellet, 10... Bump electrode, 11
, 12... Wiring, 13... Real pole, 14... Full wafer LS1. ．． 14a, ,14b, ,1.4
c, -, circuit block, 15... insulating layer, 16...
・Wiring, 17... Electrode.

Claims (1)

[Scope of Claims] 1. A semiconductor device in which a wiring pellet is face-down bonded to a pellet mounting board on which a plurality of pellets are face-down bonded. 2. The semiconductor device according to claim 1, wherein the wiring pellet is formed with a predetermined wiring that electrically connects each bump electrode. 3. The semiconductor device according to claim 1, wherein the pellet mounting substrate is a mother chip. 4. A semiconductor device in which a wiring pellet is face-down bonded to an electrode formed above a circuit forming portion of a large pellet and electrically connected to the circuit via an insulating film. 5. The semiconductor device according to claim 4, wherein the wiring pellet is formed with a predetermined wiring that electrically connects each bump electrode. 6. The semiconductor device according to claim 4, wherein the large pellet is formed of a plurality of circuit blocks. 7. The semiconductor device according to claim 4, wherein the large pellet is a full wafer LSI.