JPS61147531A - Reactive ion etching method - Google Patents
Reactive ion etching methodInfo
- Publication number
- JPS61147531A JPS61147531A JP26998384A JP26998384A JPS61147531A JP S61147531 A JPS61147531 A JP S61147531A JP 26998384 A JP26998384 A JP 26998384A JP 26998384 A JP26998384 A JP 26998384A JP S61147531 A JPS61147531 A JP S61147531A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- reactive ion
- ion etching
- film
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 29
- 238000001020 plasma etching Methods 0.000 title claims description 23
- 238000005530 etching Methods 0.000 claims abstract description 40
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 11
- 239000000956 alloy Substances 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 2
- 229910015844 BCl3 Inorganic materials 0.000 abstract 4
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract 4
- 239000000203 mixture Substances 0.000 abstract 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 22
- 239000007789 gas Substances 0.000 description 18
- 230000000694 effects Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000549 Am alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 101000717863 Sporidiobolus salmonicolor Aldehyde reductase 2 Proteins 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の技術分野〕
本発明は、反応性イオンエツチング方法に関し、特にウ
ェハ上のへλ膜又はＡｇとＳｉ、Ｃｕとの合金膜をエツ
チングする反応性イオンエツチング方法に係わる。Detailed Description of the Invention (Technical Field of the Invention) The present invention relates to a reactive ion etching method, and particularly to a reactive ion etching method for etching a λ film or an alloy film of Ag, Si, and Cu on a wafer. Involved.
（発明の技術的背景とその問題点〕
ＡＲ又はその合金は集積回路の配線材料として汎用され
ている。かかるＡｌ１等の配線を形成するには、ウェハ
上に蒸着法、スパッタリング法又はＣＶＤ法によりＡｌ
膜又はＡＭ合金膜を堆積した後、該Ａ℃模膜上写真蝕剣
法によりレジストパターンを形成し、該レジストパター
ンをマスクとしてへ２膜等を選択的にエツチングする方
法が採用されている。このエツチング方法においては、
従来よりエツチング液を用いる湿式エツチング法が使用
されている。しかしながら、この方法は等方向にエツチ
ングが進行するため、３μｍ以下の微細な配線パターン
の形成が不可能であった。(Technical background of the invention and its problems) AR or its alloy is widely used as a wiring material for integrated circuits.In order to form wiring such as Al1, it is necessary to form the wiring on a wafer by vapor deposition, sputtering or CVD. Al
After depositing a film or an AM alloy film, a resist pattern is formed on the A.degree. C. pattern by photoetching, and the resist pattern is used as a mask to selectively etch the 2 film or the like. In this etching method,
Conventionally, a wet etching method using an etching solution has been used. However, in this method, etching progresses in the same direction, making it impossible to form fine wiring patterns of 3 μm or less.
このようなことから、最近、異方性エツチングが可能な
反応性イオンエツチングが使用され始めている。この方
法は、反応性ガスプラス中でへ２膜等を堆積したウェハ
を設置し、直流電界で加速されたイオンをウェハの表面
に対して垂直に入射させるため、異方性エツチングが可
能となる。For these reasons, reactive ion etching, which allows anisotropic etching, has recently begun to be used. This method enables anisotropic etching by placing a wafer on which a film, etc. has been deposited, in a reactive gas plus, and injecting ions accelerated by a DC electric field perpendicularly to the wafer surface. .
ところで、ウェハの大口径化、プロセスの自動化に対抗
するために枚葉式の装置が主流になっている。枚葉式に
おいては、当然バッチ方式に比べてスループットで対向
するには、高速エツチングが要求される。しかも、エツ
チング選択比や加工形状等の緒特性は、バッチ方式に比
べて遜色なく、更に高速エツチングが要求される。上述
した反応性イオンエツチングでは、これらの要求を満た
すために多くの方法が検討されている。その−例として
、Ｂ（１！３、Ｃり２、ＣＣり＋、５ｉＣｆｆｉ＋等の
エツチングガスを使用する方法、ウェハを載置する電極
に高周波を印加するカッ−・ドカップル法、対向電極に
ウェハを載置するアノードカップル法の高周波印加を改
善した方法等が提案されている。しかしながら、いずれ
の方法によっても加工形状、エツチング選択比を満足し
、更に高速エツチングを達成することはｍＨであった。Incidentally, in order to cope with the increase in the diameter of wafers and the automation of processes, single-wafer type devices have become mainstream. Naturally, the single-wafer method requires high-speed etching in order to achieve higher throughput than the batch method. In addition, the etching selectivity, processed shape, and other characteristics are comparable to those of the batch method, and even higher speed etching is required. Regarding the above-mentioned reactive ion etching, many methods have been studied to meet these requirements. Examples include a method using an etching gas such as B(1!3, C2, CC2+, 5iCffi+, etc.), a quadruple couple method in which a high frequency is applied to the electrode on which the wafer is placed, and a method in which a high frequency is applied to the electrode on which the wafer is placed; Methods have been proposed in which the high frequency application of the anode couple method for placing the wafer is improved.However, it is difficult for any of these methods to satisfy the processing shape and etching selectivity, and to achieve high-speed etching at mH. Ta.
この原因は多くあるが、主要なものは以下の３点である
。There are many reasons for this, but the following three are the main ones.
■、八２の表面は酸化され易く、堅いＡり２０３膜で覆
われているため、これをエツチングするには長い時間を
要し、全体としてのエツチング速度が低下する。(2) Since the surface of 82 is easily oxidized and is covered with a hard Al 203 film, it takes a long time to etch this, reducing the overall etching rate.
■、八２は、本来化学的にエツチングされる（プラズマ
の雰囲気でなくともエツチングが進行する）ため、余り
エツチングを速めると、等方向なエツチング形状となり
易い。(2) and 82 are essentially chemically etched (etching proceeds even in a plasma atmosphere), so if the etching speed is increased too much, the etched shape tends to be isodirectional.
■、Ａｆｆｉのエツチング速度を高速化すると、反応熱
によりレジストの劣化を招く。(2) When the etching speed of Affi is increased, the resist deteriorates due to reaction heat.
本発明は、ウェハ上のＡ１２１１！又はＡ多合金膜の反
応性イオンエツチングに際して、高速で異方性のエツチ
ングが可能で、更にレジストの劣化を防止し得る反応性
イオンエツチング方法を提供しようとするものである。The present invention provides A1211! on a wafer! Another object of the present invention is to provide a reactive ion etching method that enables high-speed and anisotropic etching of a polyalloy film and prevents resist deterioration.
（発明の概要〕
本発明者らは、Ａρ膜等の表面に形成されたＡｇ３０３
１ＦＪの除去に効果的に作用するＢＣｆｆｉ３を用い、
かつエツチング速度の増加のためにＣＣ２を用い、更に
冷却効果のあるＨｅを使用することによって、既述の如
くウェハ上のＡｆｆｉ膜又はへ２合金膜の反応性イオン
エツチングに際して、高速で異方性のエツチングが可能
で、更にレジストの劣化を防止し得る反応性イオンエツ
チング方法を見出したものである。(Summary of the Invention) The present inventors have discovered that Ag303 formed on the surface of an Aρ film, etc.
Using BCffi3, which effectively acts on the removal of 1FJ,
In addition, by using CC2 to increase the etching rate and further using He, which has a cooling effect, it is possible to achieve high speed and anisotropic etching during reactive ion etching of the Affi film or He2 alloy film on the wafer as described above. The present inventors have discovered a reactive ion etching method that enables etching of the resist and prevents deterioration of the resist.
即ち、本発明は、真空チャンバ内でシリコンウェハ上に
堆積したＡｌ嘆又はＡｌを主成分とする合金膜をＢＣｆ
ｆｉ 、Ｃｆ；１２、Ｈｅの混合ガスでエツチングを行
なうことを特徴とするものである。That is, in the present invention, an Al layer or an alloy film mainly composed of Al deposited on a silicon wafer in a vacuum chamber is treated with BCf.
This method is characterized in that etching is performed using a mixed gas of fi, Cf; 12, and He.
上記へ２を主成分とする合金膜としては、例えばＡｐ−
ｓ：合金膜、八り−Ｃｕ合金膜、Ａ℃−ｓ ｒ −ｃｕ
合金膜等を挙げることができる。For example, the alloy film containing 2 as a main component is Ap-
s: Alloy film, Yari-Cu alloy film, A℃-sr-cu
Examples include alloy films.
上記チャンバ内でのエツチング時の作動圧力は、枚葉式
で実用上差支えないエツチング速度を示し、同時に異方
性形状を確保する観点がら、８０Ｐａ〜１８０Ｐａの範
囲にすることが望ましい。The operating pressure during etching in the chamber is desirably in the range of 80 Pa to 180 Pa from the viewpoint of achieving a practically acceptable etching rate in a single wafer process and at the same time ensuring an anisotropic shape.
上記混合ガスを構成するＢＣβ３とＣβ２とのガス流量
比は、枚葉式で実用上差支えないエツチング速度を示し
、同時に異方性形状を確保する観点から、０℃２ ／
（８０ｇ３＋Ｃｊ２２）で、３０〜６０％の範囲にする
ことが望ましい。The gas flow rate ratio of BCβ3 and Cβ2 constituting the above-mentioned mixed gas is 0°C2 /
(80g3+Cj22), which is preferably in the range of 30 to 60%.
上記混合ガスを構成するＨｅの供給量は、エツチング時
の冷却効果を充分に図る観点から、５００８ＣＣＭ以上
にすることが望ましい。なお、Ｈｅの供給上限は排気能
力等の点から２０００８ＣＣＭにすることが望ましい。The supply amount of He constituting the above-mentioned mixed gas is desirably 5008 CCM or more from the viewpoint of achieving a sufficient cooling effect during etching. Note that the upper limit of He supply is desirably 20008 CCM from the viewpoint of exhaust capacity and the like.
以下、本発明の実施例を第１図を参照して詳細に説明す
る。Hereinafter, embodiments of the present invention will be described in detail with reference to FIG.
第１図は、本発明の実施例に用いるカソードカップルタ
イプの反応性イオンエツチング装置の概略断面である。FIG. 1 is a schematic cross-section of a cathode couple type reactive ion etching apparatus used in an embodiment of the present invention.
図中の１は真空チャンバである。1 in the figure is a vacuum chamber.
このチャンバ１内には、平行して対向する一対の電極２
．３が配設されている。この上部電極２は、箱形になっ
ており、前記下部電極３と対向する面にガスの噴出口（
図示せず）が開孔され、かつ該電極２はガス導入管４と
連結されている。このガス導入管４には、反応ガスとし
てのＢＣｎａとＣり２とＨｅとの混合ガスが供給される
。これらガスはマスフローにより自由に流Ｍを設定でき
るようになっている。また、前記上部゛電極２はグラン
ドに接続されている。前記下部型ｗＡ３には、同電極３
を冷却するための冷却水循環配管５が連結されている。Inside this chamber 1, there are a pair of electrodes 2 facing in parallel.
．． 3 are arranged. This upper electrode 2 has a box shape, and has a gas ejection port (
(not shown) is opened, and the electrode 2 is connected to a gas introduction pipe 4. This gas introduction pipe 4 is supplied with a mixed gas of BCna, C2, and He as a reactive gas. The flow M of these gases can be freely set by mass flow. Further, the upper electrode 2 is connected to ground. The lower mold wA3 has the same electrode 3.
A cooling water circulation pipe 5 for cooling is connected.
また、この下部電極３はマツチングネットワーク６及び
高周波電源７を介してグランドに接続されている。こう
した高周波電源７から一対の電極２．３の間に高周波を
入力すると、イオンと電子の易動度の差から下部Ｎ極３
近隣に自己バイアス電圧（Ｖｄｃ）が発生し、これによ
り加速されたイオンが下部電極上のウェハに衝突する。Further, this lower electrode 3 is connected to ground via a matching network 6 and a high frequency power source 7. When a high frequency is input between the pair of electrodes 2.3 from such a high frequency power source 7, the lower N pole 3 due to the difference in mobility between ions and electrons.
A self-bias voltage (Vdc) is generated nearby, causing accelerated ions to collide with the wafer on the bottom electrode.
前記真空チャンバ１の下部には、排気管８が連結されて
いる。この排気管８には、図示しないロータリーポンプ
及びメカニカルブースターポンプが連結されている。ま
た、同チャンバ１の外周には加熱ヒータ９が設けられて
いる。An exhaust pipe 8 is connected to the lower part of the vacuum chamber 1 . A rotary pump and a mechanical booster pump (not shown) are connected to the exhaust pipe 8. Further, a heater 9 is provided on the outer periphery of the chamber 1 .
次に、前述した反応性イオンエツチング装置を用いて本
発明のエツチング方法を説明する。Next, the etching method of the present invention will be explained using the above-mentioned reactive ion etching apparatus.
まず、直径５インチの単結晶シリコンからなる半導体基
板（シリコンウェハ）１１上に熱酸化処理により厚さ約
１０００人の酸化膜１２を形成し、更にスパッタリング
法により該酸化膜１２上に厚さ約８０００人のＡｆｆｉ
−３ｉ膜１３を堆積した侵、写真蝕刻法により該Ａλ−
８ｉ Ｍｌ １３上にレジストパターン１４を形成した
く第２図図示）。つづいて、このウェハ１１を前述した
第１図図示の真空チャンバ１内の下部電極３上にセット
した。ひきつづき、図示しないロータリーポンプ及びメ
カニカルブースターポンプを佐渡してチャンバ１内を１
×１０°３ ｔｏｒｒまで真空引きを行ない、残留ガス
を充分に排気管８から排気した。次いで、反応性ガスと
しのＢＣｎａ 、ＣＱ２及びＨｅガスをマスフローコン
トロールを通して流量制御してガス導入管４からチャン
バ１内に供給し、更にチャンバ１とメカニカルブースタ
の間にあるコンダクションバルブにより圧力を制卸し、
同時だ後、高周波電源（１３，５６Ｍｌ−１ｚ）７から
下部電極３に３００Ｗの高周波電力を印加して、電極２
．３間にプラズマを発生させ、加速されたイオンをウェ
ハ１１のレジストパターン″１４から露出したＡｇ−３
ｉ膜１３に衝突させ、Ａｇ−５ｒ膜１３のエツチングを
行なった。First, on a semiconductor substrate (silicon wafer) 11 made of single-crystal silicon with a diameter of 5 inches, an oxide film 12 with a thickness of about 1,000 wafers is formed by thermal oxidation treatment, and then by a sputtering method, an oxide film 12 with a thickness of about 1000 nm is formed on the oxide film 12 with a thickness of about 8000 Affi
The Aλ-3i film 13 was deposited by etching and photolithography.
A resist pattern 14 is to be formed on the 8i Ml 13 (as shown in FIG. 2). Subsequently, this wafer 11 was set on the lower electrode 3 in the vacuum chamber 1 shown in FIG. 1 described above. Continuing, the rotary pump and mechanical booster pump (not shown) are transferred and the inside of chamber 1 is pumped.
A vacuum was drawn to ×10°3 torr, and residual gas was sufficiently exhausted from the exhaust pipe 8. Next, BCna, CQ2, and He gases as reactive gases are supplied into the chamber 1 from the gas introduction pipe 4 under flow control through a mass flow control, and the pressure is further controlled by a conduction valve located between the chamber 1 and the mechanical booster. wholesale,
At the same time, a high frequency power of 300 W is applied from the high frequency power source (13,56Ml-1z) 7 to the lower electrode 3, and the electrode 2
．． 3, plasma is generated and accelerated ions are applied to Ag-3 exposed from the resist pattern "14" of the wafer 11.
The Ag-5r film 13 was etched by colliding with the i film 13.
しかして、上記実施例においてＨｅを１４００ＳＣＣＭ
供給し、ＢＣＲヨとＣＪ２２の両者を７０８ＣＣＭ供給
すると共に、８０ｇ３／Ｃｆｆ１２の比をパラメータと
した時のへρ−３ｉ膜のエツチング速度と、同Ａλ−８
１膜の加工形状との関係を調べたところ、第３図に示す
特性図を得た。なお、Ａｙ−ｓ＋膜のエツチング速度は
反応性イオンエツチング後、バレル型アッシャ−装置に
てレジストパターン１４を剥離し、Ａｆｆｉ−８ｉ膜面
にエツチングにより形成、された段差をタリーステップ
装置によって測定した。また、ＡＱ−３ｉ膜の加工形状
の観察は、Ａｆｆ−８ｉ膜の反応性イオンエツチング後
、ウェハ１１を男開し、走査型電子顕微鏡で断面を観察
することによって異方性を判定した。第３図中の斜線よ
り右側の領域は、アンダーカットが発生する領域である
。第３図より明らかなようにＢＣ℃３／Ｃｇ２／Ｈｅの
混合ガスによる反応性イオンエツチングにおいて、Ｃｌ
２の供給量を増大、即ちＢＧ／！、ａ／ＣＲ２比を減少
させると、へλ−８ｉ膜のエツチング速度は増加するが
、加工形状はアンダーカットが発生した状態となる。一
方、Ｃｌ２の供給量を減少させ、ＢＣλ〕の量を増加す
ると、加工形状が異方性となる。こうしたことより、枚
葉式で実用上支障のないエツチング速度を示し、同時に
異方性形状を確保できるＢＣｎａとＧＱ２の流量比条件
は、ＣｆＪ１２／ （ＢＣクヨ＋Ｃλ２）が３０〜６０
％の範囲であることがわかる。Therefore, in the above example, He was 1400SCCM
The etching rate of the ρ-3i film and the same Aλ-8 when both BCR Yo and CJ22 are supplied at 708 CCM and the ratio of 80g3/Cff12 is taken as a parameter.
When the relationship with the processed shape of one film was investigated, the characteristic diagram shown in FIG. 3 was obtained. The etching rate of the Ay-s+ film was determined by removing the resist pattern 14 using a barrel-type asher device after reactive ion etching, and measuring the step formed by etching on the surface of the Affi-8i film using a tally step device. . Further, to observe the processed shape of the AQ-3i film, after reactive ion etching of the Aff-8i film, the wafer 11 was opened open and the cross section was observed with a scanning electron microscope to determine the anisotropy. The area to the right of the diagonal line in FIG. 3 is an area where undercuts occur. As is clear from Fig. 3, in reactive ion etching using a mixed gas of BC°C3/Cg2/He, Cl
Increase the supply of 2, i.e. BG/! When the a/CR2 ratio is decreased, the etching rate of the λ-8i film increases, but the processed shape becomes undercut. On the other hand, when the supply amount of Cl2 is decreased and the amount of BCλ] is increased, the processed shape becomes anisotropic. For these reasons, the conditions for the flow rate ratio of BCna and GQ2 that allow a single wafer type to exhibit a practically acceptable etching speed and at the same time ensure an anisotropic shape are as follows: CfJ12/(BC+Cλ2) is 30 to 60.
% range.
また、０ｇ２／（ＢＣり３ ＋ＣＪ２２ ＞が４５％に
設定した時のエツチング速度の圧力依存性（チャンバ内
圧力）を調べたところ、第４図に示す特性図を得た。こ
の第４図より明らかなように枚葉式で実用上支障のない
エツチング速度を示し、同時に異方性形状を確保できる
圧力条件は８０Ｐａ〜１８０Ｐａの範囲であることがわ
かる。Furthermore, when we investigated the pressure dependence (chamber internal pressure) of the etching rate when 0g2/(BC Ri3 + CJ22 > was set to 45%, we obtained the characteristic diagram shown in Fig. 4. As is clear, the pressure conditions under which a single-wafer etching method can exhibit a practically acceptable etching rate and at the same time ensure an anisotropic shape are in the range of 80 Pa to 180 Pa.
なお、上記実施例ではカソードカップルタイプの反応性
イオンエツチング装置を用いて説明したが、ＢＣｆｆｉ
ａとＣｌ２２との比を前記範囲内で制鉗すること等によ
って、アノードカップルタイプの反応性イオンエツチン
グ装置を使用しても同様な効果を達成できる。In addition, although the above embodiment was explained using a cathode couple type reactive ion etching apparatus, the BCffi
A similar effect can be achieved by using an anode couple type reactive ion etching apparatus by controlling the ratio of a to Cl22 within the above range.
〔発明の効果］
以上詳述した如く、本発明によればウェハ上のＡＲＩＩ
！又はＡｌ合金膜の反応性イオンエツチングに際して、
高速で異方性のエツチングが可能で、更にレジストの劣
化を防止でき、ひいては高精度の八２又はへ２合金配線
を効率よく形成し得る等顕著な効果を有する反応性イオ
ンエツチング方法を提供できる。[Effects of the Invention] As detailed above, according to the present invention, ARII on a wafer
! Or during reactive ion etching of Al alloy film,
It is possible to provide a reactive ion etching method that has remarkable effects such as being able to perform anisotropic etching at high speed, preventing resist deterioration, and efficiently forming high-precision 82 or 2 alloy wiring. .
第１図は本発明の実施例で使用したカソードカップルタ
イプの反応性イオンエツチング装置の一形態を示す概略
断面図、第２図は本実施例における反応性イオンエツチ
ングを行なうウェハの形状を示す断面図、第３図はＣｌ
２／ （ＢＣり３＋０２２）の比率とＡＱ−８ｉＩ１９
！のエツチング速度との関係を示す特性図、第４図は真
空チャンバ内の作動圧力とエツチング速度との関係を示
す特性図である。
１・・・真空チャンバ、２・・・上部電極、３・・・下
部電極、４・・・ガス導入管、７・・・高周波電源、８
・・・排気管、１１・・・ウェハ、１３・・・Δｇ−８
ｉ膜、１４・・・レジストパターン。
出願人代理人 弁理士 鈴江武彦
′；２１図
第２図
第３図FIG. 1 is a schematic cross-sectional view showing one form of a cathode couple type reactive ion etching apparatus used in an example of the present invention, and FIG. 2 is a cross-sectional view showing the shape of a wafer to be subjected to reactive ion etching in this example. Figure 3 is Cl
2/ Ratio of (BCri3+022) and AQ-8iI19
! FIG. 4 is a characteristic diagram showing the relationship between the working pressure in the vacuum chamber and the etching rate. DESCRIPTION OF SYMBOLS 1... Vacuum chamber, 2... Upper electrode, 3... Lower electrode, 4... Gas introduction tube, 7... High frequency power supply, 8
...Exhaust pipe, 11...Wafer, 13...Δg-8
i film, 14...resist pattern. Applicant's agent Patent attorney Takehiko Suzue; Figure 21 Figure 2 Figure 3
Claims (4)
ｌ膜又はＡｌを主成分とする合金膜をＢＣｌ＿３、Ｃｌ
＿２、Ｈｅの混合ガスでエッチングを行なうことを特徴
とする反応性イオンエッチング方法。(1) A deposited on a silicon wafer in a vacuum chamber
BCl_3, Cl film or alloy film mainly composed of Al
_2. A reactive ion etching method characterized by etching with a mixed gas of He.
であることを特徴とする特許請求の範囲第１項記載の反
応性イオンエッチング方法。(2) Operating pressure during etching is 80Pa to 180Pa
A reactive ion etching method according to claim 1, characterized in that:
（ＢＣｌ＿３＋Ｃｌ＿２）で３０〜６０％であることを
特徴とする特許請求の範囲第１項又は第２項記載の反応
性イオンエッチング方法。(3) The gas flow rate ratio of BCl_3 and Cl_2 is Cl_2/
3. The reactive ion etching method according to claim 1 or 2, wherein (BCl_3+Cl_2) is 30 to 60%.
徴とする特許請求の範囲第１項乃至第３項記載の反応性
イオンエッチング方法。(4) The reactive ion etching method according to any one of claims 1 to 3, characterized in that each wafer is etched one by one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26998384A JPS61147531A (en) | 1984-12-21 | 1984-12-21 | Reactive ion etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26998384A JPS61147531A (en) | 1984-12-21 | 1984-12-21 | Reactive ion etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61147531A true JPS61147531A (en) | 1986-07-05 |
Family
ID=17479935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26998384A Pending JPS61147531A (en) | 1984-12-21 | 1984-12-21 | Reactive ion etching method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61147531A (en) |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6369988A (en) * | 1986-09-09 | 1988-03-30 | Nec Corp | Dry etching method |
| AT389350B (en) * | 1987-09-11 | 1989-11-27 | Avl Verbrennungskraft Messtech | INTAKE SYSTEM FOR INTERNAL COMBUSTION ENGINES |
| US5888414A (en) * | 1991-06-27 | 1999-03-30 | Applied Materials, Inc. | Plasma reactor and processes using RF inductive coupling and scavenger temperature control |
| US5990017A (en) * | 1991-06-27 | 1999-11-23 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US6036877A (en) * | 1991-06-27 | 2000-03-14 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US6036878A (en) * | 1996-02-02 | 2000-03-14 | Applied Materials, Inc. | Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna |
| US6054013A (en) * | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
| US6063233A (en) * | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
| US6077384A (en) * | 1994-08-11 | 2000-06-20 | Applied Materials, Inc. | Plasma reactor having an inductive antenna coupling power through a parallel plate electrode |
| US6083412A (en) * | 1993-10-15 | 2000-07-04 | Applied Materials, Inc. | Plasma etch apparatus with heated scavenging surfaces |
| US6090303A (en) * | 1991-06-27 | 2000-07-18 | Applied Materials, Inc. | Process for etching oxides in an electromagnetically coupled planar plasma apparatus |
| US6132551A (en) * | 1997-09-20 | 2000-10-17 | Applied Materials, Inc. | Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil |
| US6165311A (en) * | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US6238588B1 (en) | 1991-06-27 | 2001-05-29 | Applied Materials, Inc. | High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process |
| US6251792B1 (en) | 1990-07-31 | 2001-06-26 | Applied Materials, Inc. | Plasma etch processes |
| US6361644B1 (en) | 1995-08-30 | 2002-03-26 | Applied Materials, Inc. | Parallel-plate electrode reactor having an inductive antenna coupling power through a parallel plate electrode |
| US6401652B1 (en) | 2000-05-04 | 2002-06-11 | Applied Materials, Inc. | Plasma reactor inductive coil antenna with flat surface facing the plasma |
| US6488807B1 (en) | 1991-06-27 | 2002-12-03 | Applied Materials, Inc. | Magnetic confinement in a plasma reactor having an RF bias electrode |
| US6514376B1 (en) | 1991-06-27 | 2003-02-04 | Applied Materials Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US6518195B1 (en) | 1991-06-27 | 2003-02-11 | Applied Materials, Inc. | Plasma reactor using inductive RF coupling, and processes |
| US6589437B1 (en) | 1999-03-05 | 2003-07-08 | Applied Materials, Inc. | Active species control with time-modulated plasma |
-
1984
- 1984-12-21 JP JP26998384A patent/JPS61147531A/en active Pending
Cited By (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6369988A (en) * | 1986-09-09 | 1988-03-30 | Nec Corp | Dry etching method |
| AT389350B (en) * | 1987-09-11 | 1989-11-27 | Avl Verbrennungskraft Messtech | INTAKE SYSTEM FOR INTERNAL COMBUSTION ENGINES |
| US6251792B1 (en) | 1990-07-31 | 2001-06-26 | Applied Materials, Inc. | Plasma etch processes |
| US6440866B1 (en) | 1991-06-27 | 2002-08-27 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US6514376B1 (en) | 1991-06-27 | 2003-02-04 | Applied Materials Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US6036877A (en) * | 1991-06-27 | 2000-03-14 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US6444085B1 (en) | 1991-06-27 | 2002-09-03 | Applied Materials Inc. | Inductively coupled RF plasma reactor having an antenna adjacent a window electrode |
| US6518195B1 (en) | 1991-06-27 | 2003-02-11 | Applied Materials, Inc. | Plasma reactor using inductive RF coupling, and processes |
| US6063233A (en) * | 1991-06-27 | 2000-05-16 | Applied Materials, Inc. | Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US6074512A (en) * | 1991-06-27 | 2000-06-13 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
| US5888414A (en) * | 1991-06-27 | 1999-03-30 | Applied Materials, Inc. | Plasma reactor and processes using RF inductive coupling and scavenger temperature control |
| US5990017A (en) * | 1991-06-27 | 1999-11-23 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US6090303A (en) * | 1991-06-27 | 2000-07-18 | Applied Materials, Inc. | Process for etching oxides in an electromagnetically coupled planar plasma apparatus |
| US6488807B1 (en) | 1991-06-27 | 2002-12-03 | Applied Materials, Inc. | Magnetic confinement in a plasma reactor having an RF bias electrode |
| US6165311A (en) * | 1991-06-27 | 2000-12-26 | Applied Materials, Inc. | Inductively coupled RF plasma reactor having an overhead solenoidal antenna |
| US6454898B1 (en) | 1991-06-27 | 2002-09-24 | Applied Materials, Inc. | Inductively coupled RF Plasma reactor having an overhead solenoidal antenna and modular confinement magnet liners |
| US6238588B1 (en) | 1991-06-27 | 2001-05-29 | Applied Materials, Inc. | High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process |
| US6623596B1 (en) | 1992-12-01 | 2003-09-23 | Applied Materials, Inc | Plasma reactor having an inductive antenna coupling power through a parallel plate electrode |
| US6083412A (en) * | 1993-10-15 | 2000-07-04 | Applied Materials, Inc. | Plasma etch apparatus with heated scavenging surfaces |
| US6077384A (en) * | 1994-08-11 | 2000-06-20 | Applied Materials, Inc. | Plasma reactor having an inductive antenna coupling power through a parallel plate electrode |
| US6361644B1 (en) | 1995-08-30 | 2002-03-26 | Applied Materials, Inc. | Parallel-plate electrode reactor having an inductive antenna coupling power through a parallel plate electrode |
| US6444084B1 (en) | 1996-02-02 | 2002-09-03 | Applied Materials, Inc. | Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna |
| US6054013A (en) * | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
| US6524432B1 (en) | 1996-02-02 | 2003-02-25 | Applied Materials Inc. | Parallel-plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
| US6036878A (en) * | 1996-02-02 | 2000-03-14 | Applied Materials, Inc. | Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna |
| US6365063B2 (en) | 1996-05-13 | 2002-04-02 | Applied Materials, Inc. | Plasma reactor having a dual mode RF power application |
| US6218312B1 (en) | 1996-05-13 | 2001-04-17 | Applied Materials Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US6024826A (en) * | 1996-05-13 | 2000-02-15 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| US6132551A (en) * | 1997-09-20 | 2000-10-17 | Applied Materials, Inc. | Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil |
| US6589437B1 (en) | 1999-03-05 | 2003-07-08 | Applied Materials, Inc. | Active species control with time-modulated plasma |
| US6401652B1 (en) | 2000-05-04 | 2002-06-11 | Applied Materials, Inc. | Plasma reactor inductive coil antenna with flat surface facing the plasma |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS61147531A (en) | Reactive ion etching method | |
| US6136211A (en) | Self-cleaning etch process | |
| JPH0383335A (en) | Etching process | |
| JPH08236513A (en) | Method of etching substrate in plasma | |
| JP3400918B2 (en) | Method for manufacturing semiconductor device | |
| JP3808902B2 (en) | Plasma etching method | |
| JP4184851B2 (en) | Plasma processing method | |
| WO2003056617A1 (en) | Etching method and plasma etching device | |
| JPH06338479A (en) | Etching method | |
| JPH10178014A (en) | Method for manufacturing semiconductor device | |
| JP3259000B2 (en) | Method for etching refractory metal-containing film and method for manufacturing thin film capacitor | |
| JPH0722393A (en) | Dry etching equipment and method | |
| JP4360065B2 (en) | Plasma processing method | |
| JPS58191432A (en) | Forming method for thin-film | |
| JP2603989B2 (en) | Method for manufacturing semiconductor device | |
| JPS62154628A (en) | Dry etching method | |
| JPH06108272A (en) | Plasma etching method | |
| JP2002319569A (en) | Dry etching method | |
| JPS61147532A (en) | Reactive ion etching method | |
| JPH0666294B2 (en) | Dry etching method | |
| JP3597721B2 (en) | Etching method and method of manufacturing semiconductor device | |
| JP3337502B2 (en) | Plasma etching apparatus and plasma etching method | |
| JPS584930A (en) | Removing method of photoresist | |
| JPS61174634A (en) | Method of dry etching | |
| JPH0290521A (en) | Manufacture of semiconductor device |