JPS61145721A - Magnetic disk - Google Patents

Magnetic disk

Info

Publication number
JPS61145721A
JPS61145721A JP26614484A JP26614484A JPS61145721A JP S61145721 A JPS61145721 A JP S61145721A JP 26614484 A JP26614484 A JP 26614484A JP 26614484 A JP26614484 A JP 26614484A JP S61145721 A JPS61145721 A JP S61145721A
Authority
JP
Japan
Prior art keywords
film
substrate
base film
magnetic disk
hollow cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26614484A
Other languages
Japanese (ja)
Inventor
Yoshio Nakagawa
宣雄 中川
Katsuo Abe
勝男 阿部
Takanori Kaizuka
貝塚 隆則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP26614484A priority Critical patent/JPS61145721A/en
Publication of JPS61145721A publication Critical patent/JPS61145721A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the electromagnetic characteristic and reliability on the head crash resistance of the titled disk by using a Cr-film ground substrate. CONSTITUTION:Since a hollow cathode vapor deposition process which is used in the formation of a film ground substrate made of Cr 2 is a kind of ion plating process, the deposition process can be performed in the order of an atom by using, for example, high purity Cr of 99.9% purity. Accordingly, the film substrate substantially without any defects can be obtained. A Cr-film substrate having 700-120kg/cm<2> Vickers hardness can be obtained by the hollow cathode deposition process, although the result depends largely on the conditions. Consequently, a surface which is simultaneously flat and smooth can be obtained by adopting and appropriate working process.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は磁気ディスクの改良に関するものである。[Detailed description of the invention] [Field of application of the invention] The present invention relates to improvements in magnetic disks.

〔発明の背景〕[Background of the invention]

従来の磁気ディスクに用いられている下地膜基板はアル
マイト基板であり、このアルマイト基板自体の硬度は約
400Kg/−程度であるので、膜厚は耐熱性の見地か
ら3μmまでと限定されている。このため、ヘッドの衝
突および荷重に対し、下地膜として十分に支持できない
ので、これを用いた磁気ディスクの耐ヘッドクラツシユ
性は十分でないという問題があった。
The base film substrate used in conventional magnetic disks is an alumite substrate, and since the hardness of this alumite substrate itself is about 400 kg/-, the film thickness is limited to 3 μm from the viewpoint of heat resistance. For this reason, the underlying film cannot provide sufficient support against collisions and loads from the head, resulting in a problem that magnetic disks using this film do not have sufficient head crush resistance.

一方、先行技術として、例えば特開昭49−74912
号公報に記載されたものがあるが、この発明は記録媒体
の耐食性を改善を目的とし、その内容はTi 、Mn 
、 Crおよび■のうちの一つを蒸着法により、下地膜
の膜厚を0,2〜0.3μmに形成したものである。こ
のような先行技術では、耐ヘッドクラツシユ性の改善の
見地からの考慮および検討がなされておらず、かつ前記
のように膜厚も薄肉に形成されている。
On the other hand, as prior art, for example, Japanese Patent Application Laid-Open No. 49-74912
The purpose of this invention is to improve the corrosion resistance of recording media, and the content thereof is to improve the corrosion resistance of recording media.
, Cr, and (1) are formed by vapor deposition to a thickness of the base film of 0.2 to 0.3 μm. In such prior art, no consideration or investigation has been made from the standpoint of improving head crush resistance, and the film thickness is also formed to be thin as described above.

〔発明の目的〕[Purpose of the invention]

本発明は上記にかんがみ、電磁変換特性および耐ヘッド
クラッシェ信頼性を向上させることにより、磁気ディス
クの性能を格段に向上させることを目的とするものであ
る。
In view of the above, an object of the present invention is to significantly improve the performance of a magnetic disk by improving electromagnetic conversion characteristics and reliability against head crushing.

〔発明の概要〕[Summary of the invention]

本発明は上記目的を達成するため、M合金基材上に下地
膜、酸化鉄磁性薄膜および保護膜を順次に積層して構成
した磁気ディスクにおいて、前記下地膜としてCr金属
を用いて基板を形成したことを特徴とする。
In order to achieve the above object, the present invention provides a magnetic disk constructed by sequentially laminating a base film, an iron oxide magnetic thin film, and a protective film on an M alloy base material, in which a substrate is formed using Cr metal as the base film. It is characterized by what it did.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を図面について説明する。 An embodiment of the present invention will be described below with reference to the drawings.

第1図においては、1はMfを4.5%含有する508
6M合金からなる基材で、この基材1は表面粗さをα1
μmRynaxに仕上加工を施した板厚(t)t9のM
合金材により外径210φ、内径100φ(図示せず)
K形成されている。2はM合金基材1の表面を清浄化す
るために、必要な脱脂、エツチング処理を行った後に、
ホロカソード蒸着装置(図示せず)内にセットし、下記
条件のもとでCrにより膜厚90μmに形成された下地
膜基板である。
In Figure 1, 1 is 508 containing 4.5% Mf.
A base material made of 6M alloy, this base material 1 has a surface roughness of α1
Plate thickness (t) t9 M after finishing μmRynax
Outer diameter 210φ and inner diameter 100φ due to alloy material (not shown)
K is formed. 2, after performing necessary degreasing and etching treatment to clean the surface of the M alloy base material 1,
This is a base film substrate set in a hollow cathode deposition apparatus (not shown) and formed with Cr to a thickness of 90 μm under the following conditions.

真空度(動作圧力)   7.5x10″TOff基板
温度       200℃ 基板バイパス面圧   −5OV ホロカソード放電管へのArガス導入量 30Cシ分成
膜時間        20分 上記条件のもとでCr下地膜を形成した後、その表面を
研磨加工して表面粗さを0.04μm−に、Cr下地膜
の膜厚を7μmにそれぞれ仕上げて下地膜基板として完
成する。
Degree of vacuum (operating pressure) 7.5x10″Toff Substrate temperature 200°C Substrate bypass surface pressure -5OV Amount of Ar gas introduced into the hollow cathode discharge tube 30C Si film formation time 20 minutes A Cr base film was formed under the above conditions. Thereafter, the surface is polished to a surface roughness of 0.04 .mu.m and the thickness of the Cr underlayer to 7 .mu.m, thereby completing the underlayer substrate.

上記基板2上には、そのCr研磨加工面を洗浄して清浄
化した後、下記のスパッタ条件のもとに撤化鉄(Fe3
O4)薄膜3が形成されている。
After cleaning and cleaning the Cr polished surface of the substrate 2, decomposed iron (Fe3) was deposited on the substrate 2 under the following sputtering conditions.
O4) Thin film 3 is formed.

真空度     10wx Tr)rr雰囲気    
 kr−5%0゜ 基板加熱温度     200℃ ターゲット       Fe −2,0%C。
Vacuum degree 10wx Tr)rr atmosphere
kr-5%0°Substrate heating temperature 200°C Target Fe-2,0%C.

ターゲット投入電力密度  6 ”/cyd漢   厚
            α20μm成膜時間    
    12分 上記のようにしてFe50+薄膜3を形成した後ディス
クを熱酸化炉に収納し、300℃X5Arの処理により
r−Fe、OBに変換させる。さらに、この酸化鉄磁性
薄膜6上には、フッ化炭素糸の保護膜(潤滑膜)4が形
成されている。
Target input power density 6”/cyd Thickness α20μm Film formation time
After forming the Fe50+ thin film 3 as described above for 12 minutes, the disk was placed in a thermal oxidation furnace and converted into r-Fe and OB by treatment at 300°C and 5Ar. Further, on this iron oxide magnetic thin film 6, a protective film (lubricating film) 4 of fluorocarbon thread is formed.

次に上記のように構成した本実施例、特にそのCrH下
地膜基板2の特性について説明する。
Next, the present embodiment configured as described above, particularly the characteristics of the CrH base film substrate 2, will be explained.

Crg下地膜基板2の形成に用いられるホロカソード蒸
着法は、一種のイオンプレティングであるため、蒸発材
料として高純度、例えば929%のCrを用いれば、原
子オーダーでj[プロセスであるから、本質的に無欠陥
な下地膜基板をうろことができる。また、前記ホロカソ
ード蒸着法によれば、条件にもよるがビッカース硬度で
700〜1200〜/−のCr下地膜基板をうろことが
できるため、適切な加工プロセスの採用により本質的に
平坦で、平滑な面をうろことが可能である。
The hollow cathode evaporation method used to form the Crg base film substrate 2 is a type of ion plating, so if high purity, for example 929% Cr, is used as the evaporation material, the The base film substrate is virtually defect-free. In addition, according to the hollow cathode deposition method, it is possible to coat a Cr base film substrate with a Vickers hardness of 700 to 1200 to /-, depending on the conditions, so that it can be made essentially flat and smooth by adopting an appropriate processing process. It is possible to walk around the surface.

上記のようにCr下地膜基板2は、比較的に高硬度(H
v700−1200 ”4/−)であるため、ヘッドの
衝突および荷重に対して強靭な下地となりうる。しかし
、膜厚が5μm以下では、M基材の軟質(Hv=60〜
909)の影響が現われるため、Cr下地膜基板2は十
分な効果を発揮できな〜・。一方、膜厚が15μm以上
になると、その膜厚を増大した効、果が発揮されないば
かりでなく、むしろ下地膜自体のクラックの問題を生ず
るから好ましくない。したがって、本実施例では、Cr
下地膜基板の膜厚を5〜15μmに限定した。
As mentioned above, the Cr base film substrate 2 has a relatively high hardness (H
V700-1200 "4/-), it can become a strong base against head collisions and loads. However, if the film thickness is 5 μm or less, the M base material is soft (Hv = 60 ~
909), the Cr base film substrate 2 cannot exhibit sufficient effects. On the other hand, if the film thickness exceeds 15 μm, not only the effects of increasing the film thickness will not be exhibited, but also the problem of cracks in the base film itself will occur, which is not preferable. Therefore, in this example, Cr
The film thickness of the base film substrate was limited to 5 to 15 μm.

さらに、本実施例のように酸化鉄を反応スパッタにより
形成する、いわゆるスパッタディスクでは、下地膜に化
学的に不安定な金属、例えばA7基板、NL−pメッキ
基板を用いると、酸化鉄の酸素が下地膜に取込まれるた
め、性能の優れた酸化鉄媒体が形成できない。ところが
、本実施例のようにCr下地膜基板を用いれば前記問題
を生ずる恐れはなく、媒体との関連における化学的安定
性に優れている。これは、クロム自体の表面に強固な酸
化クロム膜が形成されるためと考えられる。
Furthermore, in a so-called sputter disk in which iron oxide is formed by reactive sputtering as in this embodiment, if a chemically unstable metal such as an A7 substrate or an NL-P plated substrate is used as the base film, the oxygen of the iron oxide is incorporated into the underlying film, making it impossible to form an iron oxide medium with excellent performance. However, if a Cr undercoating film substrate is used as in this embodiment, there is no fear of the above problem and the chemical stability in relation to the medium is excellent. This is considered to be because a strong chromium oxide film is formed on the surface of chromium itself.

本実施例によれば、Cr下地膜基板を用いることにより
、耐C8S回数を20,000回達成できたがこれに対
し、アルマイト下地膜基板を用いた従来例の耐C8S回
数は、本実施例のそれ(20,0叩回)に比べて大幅に
(1桁ないし2桁程度)低下する不利がある。
According to this example, by using a Cr base film substrate, it was possible to achieve a C8S resistance of 20,000 times, whereas in this example, the C8S resistance of the conventional example using an alumite base film substrate was 20,000 times. There is a disadvantage that it is significantly lower (about 1 to 2 digits) than that of (20.0 hits).

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明によれば、Cr下地膜基板
を用いることにより、電磁変換特性および耐ヘッドクラ
ッシェ信頼性を向上させることができる。したがって、
磁気ディスクの性能を格段に向上させることが可能であ
る。
As described above, according to the present invention, by using a Cr base film substrate, electromagnetic conversion characteristics and head crush resistance reliability can be improved. therefore,
It is possible to significantly improve the performance of magnetic disks.

【図面の簡単な説明】[Brief explanation of drawings]

図面は本発明の磁気ディスクの一実施例を示す断面図で
ある。 1・・・M合金基材、    2・・・Cr製下地膜基
板、3・・・酸化鉄磁性薄膜。
The drawing is a sectional view showing an embodiment of the magnetic disk of the present invention. DESCRIPTION OF SYMBOLS 1... M alloy base material, 2... Cr base film substrate, 3... Iron oxide magnetic thin film.

Claims (1)

【特許請求の範囲】 1、Al合金基材上に下地膜、酸化鉄磁性薄膜および保
護膜を順次に積層して構成した磁気ディスクにおいて、
前記下地膜としてCr金属を用いて基板を形成したこと
を特徴とする磁気ディスク。 2、上記Cr製下地膜基板の膜厚を5〜15μmに形成
したことを特徴とする特許請求の範囲第1項記載の磁気
ディスク。 3、上記Cr製下地膜基板の形成にホロカソード蒸着法
を用いることを特徴とする特許請求の範囲第1項または
第2項記載の磁気ディスク。
[Claims] 1. A magnetic disk constructed by sequentially laminating a base film, an iron oxide magnetic thin film, and a protective film on an Al alloy base material,
A magnetic disk characterized in that a substrate is formed using Cr metal as the base film. 2. The magnetic disk according to claim 1, wherein the Cr base film substrate has a thickness of 5 to 15 μm. 3. The magnetic disk according to claim 1 or 2, wherein a hollow cathode deposition method is used to form the Cr base film substrate.
JP26614484A 1984-12-19 1984-12-19 Magnetic disk Pending JPS61145721A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26614484A JPS61145721A (en) 1984-12-19 1984-12-19 Magnetic disk

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26614484A JPS61145721A (en) 1984-12-19 1984-12-19 Magnetic disk

Publications (1)

Publication Number Publication Date
JPS61145721A true JPS61145721A (en) 1986-07-03

Family

ID=17426917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26614484A Pending JPS61145721A (en) 1984-12-19 1984-12-19 Magnetic disk

Country Status (1)

Country Link
JP (1) JPS61145721A (en)

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