JPS61144448U - - Google Patents

Info

Publication number
JPS61144448U
JPS61144448U JP2889085U JP2889085U JPS61144448U JP S61144448 U JPS61144448 U JP S61144448U JP 2889085 U JP2889085 U JP 2889085U JP 2889085 U JP2889085 U JP 2889085U JP S61144448 U JPS61144448 U JP S61144448U
Authority
JP
Japan
Prior art keywords
infrared
thick film
infrared detector
film resistor
detecting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2889085U
Other languages
Japanese (ja)
Other versions
JPH049561Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985028890U priority Critical patent/JPH049561Y2/ja
Publication of JPS61144448U publication Critical patent/JPS61144448U/ja
Application granted granted Critical
Publication of JPH049561Y2 publication Critical patent/JPH049561Y2/ja
Expired legal-status Critical Current

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  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案に係る赤外線検出器の分解斜視
図、第2図は同じく正面部分断面図、第3図はケ
ースを取除いた状態での第2図A―A線上に
おける断面図、第4図は赤外線検出器の電気回路
図、第5図は従来の赤外線検出器の部分欠損斜視
図である。 1……赤外線検出素子、3……支持基板、8,
9……導電パターン、10……ゲート抵抗となる
厚膜抵抗体、FET……電界効果トランジスタ、
Rg……ゲート抵抗。
Fig. 1 is an exploded perspective view of the infrared detector according to the present invention, Fig. 2 is a partial front sectional view of the same, and Fig. 3 is a sectional view along line A 1 - A 1 with the case removed. , FIG. 4 is an electric circuit diagram of an infrared detector, and FIG. 5 is a partially cutaway perspective view of a conventional infrared detector. 1... Infrared detection element, 3... Support substrate, 8,
9... Conductive pattern, 10... Thick film resistor serving as gate resistance, FET... Field effect transistor,
Rg...Gate resistance.

Claims (1)

【実用新案登録請求の範囲】 (1) 支持基板に、赤外線検出素子と、この赤外
線検出素子の出力側に接続される電界効果トラン
ジスタ及びゲート抵抗とを配置した赤外線検出器
において、前記支持基板の表面側に前記ゲート抵
抗となる厚膜抵抗体と前記赤外線検出素子とを配
置し、前記支持基板の裏面側に前記電界効果トラ
ンジスタを配置したことを特徴とする赤外線検出
器。 (2) 前記赤外線検出素子は焦電素子でなること
を特徴とする実用新案登録請求の範囲第1項に記
載の赤外線検出器。 (3) 前記厚膜抵抗体は、前記支持基板の表面に
形成された導電パターン間に被着して設けられる
ことを特徴とする実用新案登録請求の範囲第1項
または第2項に記載の赤外線検出器。 (4) 前記厚膜抵抗体は、前記赤外線検出素子の
取出電極に導電性接着材により接続されることを
特徴とする実用新案登録請求の範囲第1項、第2
項または第3項に記載の赤外線検出器。
[Claims for Utility Model Registration] (1) In an infrared detector in which an infrared detecting element, a field effect transistor and a gate resistor connected to the output side of the infrared detecting element are arranged on a supporting substrate, An infrared detector characterized in that a thick film resistor serving as the gate resistance and the infrared detection element are arranged on the front side, and the field effect transistor is arranged on the back side of the support substrate. (2) The infrared detector according to claim 1, wherein the infrared detecting element is a pyroelectric element. (3) The thick film resistor according to claim 1 or 2, wherein the thick film resistor is provided between conductive patterns formed on the surface of the support substrate. Infrared detector. (4) Utility model registration claims 1 and 2, characterized in that the thick film resistor is connected to the extraction electrode of the infrared detection element by a conductive adhesive.
The infrared detector according to item 1 or 3.
JP1985028890U 1985-02-28 1985-02-28 Expired JPH049561Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985028890U JPH049561Y2 (en) 1985-02-28 1985-02-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985028890U JPH049561Y2 (en) 1985-02-28 1985-02-28

Publications (2)

Publication Number Publication Date
JPS61144448U true JPS61144448U (en) 1986-09-06
JPH049561Y2 JPH049561Y2 (en) 1992-03-10

Family

ID=30527195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985028890U Expired JPH049561Y2 (en) 1985-02-28 1985-02-28

Country Status (1)

Country Link
JP (1) JPH049561Y2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH034127A (en) * 1989-05-31 1991-01-10 Horiba Ltd Pyroelectric type infrared ray detector
JPH06258137A (en) * 1993-03-04 1994-09-16 Matsushita Electric Ind Co Ltd Pyroelectric infrared ray sensor
JP2007309945A (en) * 2007-06-11 2007-11-29 Horiba Ltd Method of manufacturing infrared detector

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54141690A (en) * 1978-04-26 1979-11-05 Murata Manufacturing Co Infrared ray detector and making method thereof
JPS5658431U (en) * 1979-10-05 1981-05-19

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54141690A (en) * 1978-04-26 1979-11-05 Murata Manufacturing Co Infrared ray detector and making method thereof
JPS5658431U (en) * 1979-10-05 1981-05-19

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH034127A (en) * 1989-05-31 1991-01-10 Horiba Ltd Pyroelectric type infrared ray detector
JPH06258137A (en) * 1993-03-04 1994-09-16 Matsushita Electric Ind Co Ltd Pyroelectric infrared ray sensor
JP2007309945A (en) * 2007-06-11 2007-11-29 Horiba Ltd Method of manufacturing infrared detector
JP4686504B2 (en) * 2007-06-11 2011-05-25 株式会社堀場製作所 Infrared detector manufacturing method

Also Published As

Publication number Publication date
JPH049561Y2 (en) 1992-03-10

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