JPS6114192A - Crystal pulling device - Google Patents
Crystal pulling deviceInfo
- Publication number
- JPS6114192A JPS6114192A JP13207384A JP13207384A JPS6114192A JP S6114192 A JPS6114192 A JP S6114192A JP 13207384 A JP13207384 A JP 13207384A JP 13207384 A JP13207384 A JP 13207384A JP S6114192 A JPS6114192 A JP S6114192A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- crystal
- melt
- pulling device
- crystal pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明はシリーン単結晶などの結晶引上げ装置番＝関す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an apparatus for pulling crystals such as silene single crystals.
（発明の技術的背景とその問題点〕
単結晶の製法の１つとして現在使われているもの（二〇
ｚ法（チョクツルスキー法）という方法がある。この方
法は結晶引上げ（二結晶の材料となる融液の入つたるつ
ぼを使用する点が特徴で６９、大直径の結晶が得られる
等の利点が多い。(Technical background of the invention and its problems) One of the methods currently used for producing single crystals is the 20z method (Choctursky method). It is characterized by the use of a crucible containing the melt as a material69, and has many advantages such as the ability to obtain crystals with a large diameter.
最近の研究により・、るつぼ内の融液の流れや温度変動
が結晶成長（；大きな影響を与えること、また結晶の内
部の不純物の不均一の原因ともなっていることが判って
きた。Recent research has revealed that the flow of the melt in the crucible and temperature fluctuations have a significant effect on crystal growth, and that they are also responsible for the non-uniformity of impurities inside the crystal.
半導体関連技術の急速な進歩４二よル、良質な単結晶の
要請が多くなシ、この要請に応えるためには前述のるつ
ぼ向流れや融液の温度変動を把握し、結晶成長の促進を
図る必要があった。With the rapid progress of semiconductor-related technology, there are many demands for high-quality single crystals, and in order to meet this demand, it is necessary to understand the aforementioned crucible flow and temperature fluctuations of the melt and promote crystal growth. It was necessary to plan.
Ｃ２法弓二よる結晶引上げ弓；おいては、るつぼの外か
ら熱を加えるが、僅かの入熱変動や外乱によシ、るつぼ
内の自然対［４：よる上昇纒紘乱されて温度変動を生ず
る。また、局方回の非定常にれも発生する可能性が大で
ある。そのため４：、るつぼや結晶を回転したシ、外部
磁界をかけて流れを押えたシする試みがなされてきてい
る。特にるつぼや結晶を回転した場合の周方向（＝規則
正しくてき゛る固定パターンを持った流れの発生などは
防止することが難しく、その流れ４二よる温度の変動を
抑止することは困難でめった。In the C2 method, crystal pulling bow by two methods; heat is applied from outside the crucible, but due to slight fluctuations in heat input and disturbances, the natural temperature inside the crucible [4: will occur. In addition, there is a high possibility that irregularities in the pharmacopoeia will occur. Therefore, attempts have been made to suppress the flow by rotating the crucible or crystal or by applying an external magnetic field. In particular, when rotating a crucible or crystal, it is difficult to prevent the occurrence of a flow with a fixed pattern that rises regularly in the circumferential direction, and it is difficult and rare to suppress the temperature fluctuations caused by the flow.
不発−はるつぼ内の温就変−を極力抑え、また、不純物
の分布を均一化して、したがって良質な結晶の得られる
結晶引上げ装置を提供することを目的とする。It is an object of the present invention to provide a crystal pulling device that suppresses misfires (temperature changes in a crucible) as much as possible, makes the distribution of impurities uniform, and thus obtains high-quality crystals.
（発明の概要〕
上記目的を達成するためも二本発明の結晶引上げ装置（
二おいては、融液な貯めるるつぼの内壁ｔｉ仁凹凸を形
成し、この凹凸面じ沿って融液が循環するようにし、あ
るし１はるつばを１ｇ１転したとき（二この凹凸１ｊＨ
：ファン作用をおこなわせるよう４二する。(Summary of the invention) In order to achieve the above object, there are two crystal pulling apparatuses of the present invention (
In step 2, the inner wall of the crucible for storing the melt is formed with unevenness so that the melt circulates along the uneven surface.
: Set 42 to activate the fan action.
不発明の実施例をシリコン単結晶引上＆ｆ装置を例に図
を参照しなからｉ！明する。Please refer to the figure below for an example of an uninvented silicon single crystal pulling &f apparatus. I will clarify.
Ｊｌｌｌｇｌは代表的なＣ２法仁よる引上は装置であり
、基本的喀二はシリコンの融液（１）の入った石英るつ
ぼ（２）とそのまわシのヒータ（３）から成る。るつぼ
（２）内９融・液（１）が１４２０℃（二なると結晶化
し、徐々６二引上げること（二よ多結晶（４）が成長し
ていく。Jlllgl is a typical C2 pulling device, which basically consists of a quartz crucible (2) containing a silicon melt (1) and a heater (3) for the crucible. When the melt (1) in the crucible (2) reaches 1420°C (2), it crystallizes, and as the temperature is gradually raised to 62 (2), polycrystals (4) grow.
゛ ここでるつは（２）の内壁面（二は第２図および第
３図巡二本す如く、１ケ所以上の凸起（２＆）もしくは
溝（２ｂ）を内壁面酸部に中径方向（＝設けて凹凸を形
成させている。第２図（二おいては凹凸を周方向（；ね
、しることなく形成させているが、スパイラル状の、凹
凸の方が後述の効果が上がることもある。゛ Here, the inner wall surface of (2) (as shown in Figures 2 and 3, one or more protrusions (2 &) or grooves (2b) are formed in the inner wall surface in the middle diameter direction. In Figure 2, the unevenness is formed in the circumferential direction. Sometimes.
、るつぼ内６１１面の凸起（２ａ）の島さ、もし、くは
溝（２ｂ）の深さ紘、るつぼ（２）Ｏ中径方向外側（＝
向う電二従って低く、もしくは浅くするのが良い。, the island size of the convexity (2a) on the 611 surface inside the crucible, or the depth of the groove (2b), the outer side in the radial direction of the crucible (2) O (=
Therefore, it is better to make it low or shallow.
るりばの縦断向形状紘第３図のよう（二凸起（２ａ）も
しくはｉｌｌ （２ｂ）のある部分が底部４＝向う（二
従ってはりきシと現われてくるよう・鴫；するのが良い
。It is best to make the vertical shape of the Ruriba as shown in Figure 3 (so that the part with the biconvex (2a) or ill (2b) appears on the bottom 4 = opposite (2), so it appears sharply). .
この上う（二すると、し−タ（３）Ｃ二より暖められた
融液（１）は周方向（；乱れることなく、凸起（２ａ）
もし ）＜ ａ ｉｌｌ （２ｂ） ４：、沿って
自然対戊しより上昇するだけで無く、るりは−２） ｔ
＃ｉ！？１ ｍさせた場曾（二は遠心ファン効果が出て
融液の内部循環が強まる。仁のむと礁；よりわずかな入
熱変化（二よる擾乱中外乱（＝よる流れの乱れ、あるい
紘周方向仁規則正しくできる固定パターンを持ったにれ
の発生を極力抑えることができる。The melt (1) warmed by the heater (3) C2 flows in the circumferential direction (; without being disturbed, the melt (2a)
If ) < a ill (2b) 4:, not only does it rise more than the natural distance along, but Ruri is -2) t
#i! ? 1 m, the centrifugal fan effect appears and the internal circulation of the melt is strengthened. It is possible to suppress as much as possible the occurrence of sagging that has a fixed pattern that occurs regularly in the circumferential direction.
こうして得られた゛融液の縦断面流れを従来の流れと比
較して示すと第４図と第５図のよう（：なる。The vertical cross-sectional flow of the melt thus obtained is shown in FIGS. 4 and 5 in comparison with the conventional flow.
第４図社従来の縦断向融液成れ、第５図線本発明の場合
の融液流れである。Figure 4 shows the longitudinal melt flow in the conventional case, and Figure 5 shows the flow of the melt in the case of the present invention.
このようにするとまた、るりｔ！ （２）の壁面から溶
出した不純物を含んだ融液（１）が直接結晶（４）（二
触れること°が無くなるため、結晶内の不純物濃度を低
く抑える“ことができる。 、〔
開明の効果〕 ・・ 、本発明（二よる
と、るつぼ内の流れの均整化を図ることができる。それ
嘔二よ多温度変動を極力抑えることができ、また不純物
”分布の均一化を図ることができ、＾品質で欠陥のない
結晶を提供する仁とができる。また、本発明ζ二よると
、る、つぼ内の流れを２つの分離された流ｔＬにするこ
とができる。If you do this, you will also get Ruri-t! Since the melt (1) containing impurities eluted from the wall surface of (2) does not come into direct contact with the crystal (4), the concentration of impurities within the crystal can be kept low.
According to the present invention (2), it is possible to equalize the flow in the crucible.It is also possible to suppress temperature fluctuations as much as possible, and to make the distribution of impurities uniform. According to the present invention, the flow in the vase can be divided into two separate flows tL.
そｔＬ４二よシネ細物濃度の比較的高い流れが結晶Ｃ二
触れないよう（ニすることができ、不純物濃度の低い良
質の結晶を提供する仁とができる。It is possible to prevent the flow having a relatively high concentration of fine particles from touching the crystal C2, thereby providing a high quality crystal with a low concentration of impurities.
【図面の簡単な説明】
第１図は本発明や一実施例の結晶引上げ装置の断面図、
第２図紘第１図のるつぼを上部より見た図、＄３図図紘
２図のＩ−厘線に沿う断面図１、第４図社従来のるつぼ
咋融液の流れを誉す図、第５図は本発明の場合のる゛？
探円内融液諷れを示す図で６φｏ
、、−、。
ｌ・・・融液、 ２・・・るつぼ２＆・・・
凸起、 ２ｂ・・・溝 ・３・・・ヒー
タ、 、 鴫・・・結晶代理人 弁理士 則 近
憲 佑０１か五−名）。
第１図
第２Ｊ！１
第３図[Brief Description of the Drawings] Figure 1 is a cross-sectional view of the crystal pulling apparatus of the present invention or an embodiment;
Figure 2: A view of the crucible shown in Figure 1 from the top; Figure 3: A cross-sectional view taken along the I-Rin line in Figure 2; Figure 4: A diagram showing the flow of molten liquid in a conventional crucible. , FIG. 5 shows the case of the present invention.
6φo in the diagram showing the melt drop in the probe circle.
,,−,. l...melt liquid, 2...crucible 2&...
Convex part, 2b...Groove, 3...Heater, , Shizuku...Crystal agent, Patent attorney Noriyuki Chika 01 or 5 people). Figure 1 2J! 1 Figure 3
Claims (4)
、融液を貯めるるつぼの内壁面に１ケ所以上の溝もしく
は凸起を設け凹凸面を形成させたことを特徴とする結晶
引上げ装置。(1) A crystal pulling device using the Czochralski method, characterized in that the inner wall surface of a crucible for storing melt is provided with one or more grooves or protrusions to form an uneven surface.
る特許請求の範囲第１項記載の結晶引上げ装置。(2) The crystal pulling apparatus according to claim 1, wherein the uneven surface is provided on the bottom wall surface of the crucible.
に従つて低くしたことを特徴とする特許請求の範囲第２
項記載の結晶引上げ装置。(3) Claim 2, characterized in that the height of the protrusions on the uneven surface decreases toward the outside in the radial direction of the crucible.
Crystal pulling device as described in section.
許請求の範囲第３項記載の結晶引上げ装置。(4) The crystal pulling device according to claim 3, wherein the uneven surface has a spiral shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13207384A JPS6114192A (en) | 1984-06-28 | 1984-06-28 | Crystal pulling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13207384A JPS6114192A (en) | 1984-06-28 | 1984-06-28 | Crystal pulling device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6114192A true JPS6114192A (en) | 1986-01-22 |
Family
ID=15072877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13207384A Pending JPS6114192A (en) | 1984-06-28 | 1984-06-28 | Crystal pulling device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6114192A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007320439A (en) * | 2006-06-01 | 2007-12-13 | Universal Shipbuilding Corp | Hull storage type cargo handling device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5017552B2 (en) * | 1972-10-13 | 1975-06-21 | ||
| JPS55130892A (en) * | 1979-03-28 | 1980-10-11 | Hitachi Ltd | Single crystal drawing up apparatus |
| JPS58208193A (en) * | 1982-05-28 | 1983-12-03 | Hitachi Ltd | Crucible |
-
1984
- 1984-06-28 JP JP13207384A patent/JPS6114192A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5017552B2 (en) * | 1972-10-13 | 1975-06-21 | ||
| JPS55130892A (en) * | 1979-03-28 | 1980-10-11 | Hitachi Ltd | Single crystal drawing up apparatus |
| JPS58208193A (en) * | 1982-05-28 | 1983-12-03 | Hitachi Ltd | Crucible |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007320439A (en) * | 2006-06-01 | 2007-12-13 | Universal Shipbuilding Corp | Hull storage type cargo handling device |
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