JPS61141141A - Dry etching device - Google Patents
Dry etching deviceInfo
- Publication number
- JPS61141141A JPS61141141A JP26271484A JP26271484A JPS61141141A JP S61141141 A JPS61141141 A JP S61141141A JP 26271484 A JP26271484 A JP 26271484A JP 26271484 A JP26271484 A JP 26271484A JP S61141141 A JPS61141141 A JP S61141141A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- chamber
- processing chamber
- etching
- etching gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims description 16
- 238000005530 etching Methods 0.000 claims abstract description 39
- 238000012545 processing Methods 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000002203 pretreatment Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 11
- 238000007781 pre-processing Methods 0.000 abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000460 chlorine Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 210000004907 gland Anatomy 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、処理室内に被処理基板を設置し【、エツチン
グガスを流し、上記被処理基板に光を照射しながらエツ
チングを行なうドライエツチング装置＃Ｃ１１１１する
。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a dry etching apparatus in which a substrate to be processed is installed in a processing chamber, and etching is performed while flowing an etching gas and irradiating light onto the substrate to be processed. C1111.
半導体デバイスの高集積化に伴い、微細パターンの形成
に従来のウェットエツチングに代プ放電プラズマを応用
したドライエツチングが用いられているが、荷電粒子に
よりデバイスが損傷を受けるという問題がおる。このデ
バイス損傷は扁エネルギイオンの＃拳や、電子やイオン
の持つ電荷によるものと考えられる。そのためエネルギ
ーが一定で、電荷を持たない元によるエツチングはデバ
イス損傷が小さ―から有利である。このような装置が例
えば特開昭５８−６５１３６号に開示されている。As semiconductor devices become more highly integrated, dry etching, which uses discharge plasma as a substitute for conventional wet etching, is being used to form fine patterns, but there is a problem in that devices are damaged by charged particles. This device damage is thought to be caused by the #fist of the flat-energy ions and the electric charges of electrons and ions. Therefore, etching using a source with constant energy and no charge is advantageous because it causes less damage to the device. Such a device is disclosed, for example, in Japanese Patent Laid-Open No. 58-65136.
しかし、罵いエツチングレートを得るたメニ強い光を照
射すると光の政乱等によシ微細なバターンが形成できな
いので、尤によるエツチングで微細なパターンを形成す
るためには、弱い元でエツチングする必要がらり、その
場合−クチングレートが低いとφう問題があった。However, if you use strong light to obtain a high etching rate, you will not be able to form fine patterns due to light disturbances, so in order to form fine patterns by etching, it is necessary to irradiate with a weak source. In that case, there was a problem that the cutting rate was low.
本発明の目的は、ａｌｌなパターン形成を高−レートで
行なえる光によるドライエツチング装置を提供すること
にある。SUMMARY OF THE INVENTION An object of the present invention is to provide a dry etching apparatus using light that can form all patterns at a high rate.
（発明の概要〕
上記目的を達成するために、本発明によるドライエツチ
ング装置は、導入するエツチングガスを処理室に入れる
前にラジカル化する前処理室を具備することを要旨とす
る。エツチングガスのラジカル化は高周波電力を印加す
ることによってか、マイクロ波お′よびマイクロ波電子
サイクロトロン共鳴によってか、または元によって行な
われるのが有利である。(Summary of the Invention) In order to achieve the above object, the dry etching apparatus according to the present invention is provided with a pretreatment chamber that radicalizes the etching gas introduced into the treatment chamber before entering the treatment chamber. Advantageously, the radicalization is carried out by applying radio-frequency power, by microwave and microwave electron cyclotron resonance, or by excitation.
すなわち、本発明はつぎのような本発明者の知見に基づ
−てなされたものである。元ドライエツチングにおける
光照射には、エツチングガスをラジカル化する効果と、
被エツチング膜に吸着されたエツチングガスの分子や原
子と被エツチング膜との反応を促進させる効果の二つが
おる。またエツチングガスをラジカル化するとエツチン
グガスが被エツチング膜に吸着されやすくなるという効
果もある。従来の光照射による方法では、エツチングガ
スが光から吸収するエネルギの割合が小さく、これが反
応律速となって９る。That is, the present invention was made based on the following knowledge of the inventor. Light irradiation in original dry etching has the effect of converting the etching gas into radicals,
There are two effects: promoting the reaction between the molecules and atoms of the etching gas adsorbed on the film to be etched and the film to be etched. Furthermore, converting the etching gas into radicals has the effect of making it easier for the etching gas to be adsorbed onto the film to be etched. In the conventional method using light irradiation, the proportion of energy absorbed by the etching gas from light is small, and this becomes the reaction rate determining factor.
そこで、本発明では、プラズマ、元、熱、等によシエッ
チングガスをラジカル状態にして、被エツチングｉ上に
流し、エツチングガスのラジカルが被エツチング膜に多
量に吸着されるようにした。これに光を照射して吸着さ
れたガスと被エツチ７７編との反応を促進するようにし
従来より弱り光の照射で高速エツチングが行なえるよう
にした。Therefore, in the present invention, the etching gas is made into a radical state using plasma, gas, heat, etc., and is then flowed onto the film to be etched, so that a large amount of the radicals of the etching gas are adsorbed onto the film to be etched. This was irradiated with light to promote the reaction between the adsorbed gas and the 77 pieces to be etched, making it possible to perform high-speed etching with weaker light irradiation than in the past.
以下に、図面を参照しながら、実施例を用い ｊて本発
明を一層詳細に説明するが、それらは例示に過ぎず、本
発明の枠を越えることなしに−ろいろな変形や改良があ
シ得ることは勿論である。Hereinafter, the present invention will be explained in more detail using examples with reference to the drawings, but these are merely illustrative and various modifications and improvements can be made without going beyond the scope of the present invention. Of course you can get it.
第１図は本発明によるドライエツチング装置の模式的な
構成図で、処理室１の上蓋２には開口部があり、石英ガ
ラス製の窓５が取付けられている。下蓋４には基板ステ
ージ５が取付けらｎておシ、基板６かその上【−置され
る。エキシマレーザ装置７の発ｔＲ元はレンズ８で広げ
られ、元均−化素子１７で光強度分布を均一にされミラ
ー９で反射され、レンズ１０で平行光にされ窓３を通し
て基板６に照射される。FIG. 1 is a schematic diagram of a dry etching apparatus according to the present invention, in which an upper lid 2 of a processing chamber 1 has an opening and a window 5 made of quartz glass is attached. A substrate stage 5 is attached to the lower lid 4, and a substrate 6 is placed on it. The emitted R source of the excimer laser device 7 is expanded by a lens 8, made uniform in light intensity distribution by a source equalizing element 17, reflected by a mirror 9, made into parallel light by a lens 10, and irradiated onto a substrate 6 through a window 3. Ru.
処理室１の９１ＩＩ面には石英製の前処理室１１があり
、図示されて−ないガス供＃源からエツチングガスがガ
ス供給管１２を通して供給される。A pretreatment chamber 11 made of quartz is provided on the surface 91II of the treatment chamber 1, and etching gas is supplied through a gas supply pipe 12 from a gas supply source (not shown).
前処理室１１の外側には容ム結合型の電極１５があυ、
高周波電源１４に接続されている。On the outside of the pretreatment chamber 11, there is a capacitance-coupled electrode 15,
It is connected to a high frequency power source 14.
また、前処理室１１と処理室１の９間には、金Ｉｇ４１
５が設けられている。In addition, gold Ig41 is placed between the pretreatment chamber 11 and the treatment chamber 1.
5 is provided.
処８！Ｍ１の他方の１１１１１１ｔｉには図示さ才ｔて
いな一排気系に接続され排気口１６が設けられている。Place 8! The other 111111ti of M1 is connected to an exhaust system (not shown) and is provided with an exhaust port 16.
以上記載された構成の本発明によるドライエツチング装
置の動作について以下に説明する。The operation of the dry etching apparatus according to the present invention configured as described above will be explained below.
処理室１内を図示さｎて−ない排気ポンプで排気口１６
から排気しながら、ガス供給管１２からエツチングガス
を供給し、処理室１内の圧力１１−１ｇ’ｒｏｒｒと０
．１ ’ｒｏｒｊの間の予め定められた圧力にする。つ
ぎに、電極１３に高局波電諒１４からｌｉ＃ｉ陶波電圧
波電圧し、前処理室１１内にプラズマを発生させる。前
処理室１１のプラズマは金ｊ１１１１５により阻止され
、処理室１内には出ないようになっている。そのため、
肋処理室１１で発生したラジカルだけが処理室１に供給
される。The inside of the processing chamber 1 is connected to an exhaust port 16 using an exhaust pump (not shown).
Etching gas is supplied from the gas supply pipe 12 while exhausting from
．． Bring to a predetermined pressure between 1'rorj. Next, a li#i ceramic wave voltage is applied to the electrode 13 from the high frequency wave generator 14 to generate plasma in the pretreatment chamber 11. Plasma in the pre-processing chamber 11 is blocked by gold j11115 and does not come out into the processing chamber 1. Therefore,
Only the radicals generated in the processing chamber 11 are supplied to the processing chamber 1.
例えば多結晶Ｂｔ腺のエツチングを行なうにはエツチン
グガスにＣ６，ガスが用−られ、前処理室１１で励起さ
れ、Ｃｌラジカルとなり、処理Ｎ１に供給さ几る。Ｃ１
のラジカルは、Ｃｌ、の生ガスに較べ基板６上に形成さ
れた多結晶Ｂｉ膜に沢山吸着さｎる。For example, in etching polycrystalline Bt glands, C6 gas is used as an etching gas, which is excited in the pretreatment chamber 11 and becomes Cl radicals, which are supplied to the treatment N1. C1
More radicals are adsorbed to the polycrystalline Bi film formed on the substrate 6 than in the raw gas of Cl.
このようにＣｌラジカルを吸着した基板表面に工牟７マ
レーザ７の光を照射すると多結晶８首とＣ１が反応し、
５ＩＣ１４となり、気化し、エツチングが巡行する。When the surface of the substrate that has adsorbed Cl radicals is irradiated with light from the laser 7, the polycrystalline 8 heads and Cl react.
It becomes 5IC14, vaporizes, and etching goes around.
本実厖例によｎば、従来と同じエツチング量を得るのに
、元だけを照射し、エツチングする場合に較べ、′／４
以下の時間でよい。また被エツチング換表面には多くの
Ｃｌラジカルが吸着されているため、照射した尤の多く
は吸収され、反応を促進し、反射さｎる尤は従来のイ。According to this practical example, compared to the case where only the original is irradiated and etched to obtain the same amount of etching as before,
The following time is sufficient. Furthermore, since many Cl radicals are adsorbed on the surface to be etched, most of the irradiated chlorine radicals are absorbed, promoting the reaction, and are reflected, unlike conventional methods.
以下となるＯ
そのため、同一のエツチングレートを得るために、反射
元によるプイドエッチングの進行を便米より大幅ｒ（低
減できるという幼呆が得らｎる０
エツチングガスをラジカル化するには高周波による方法
に限定されるものではなく、実施例でも述べ′Ｃ−るよ
うに、エツチングガス上ラジカル状態にできｎはよく、
マイクロ波放電を応用する方法、光を応用する方法を用
いてもよ−ことは明らかである。Therefore, in order to obtain the same etching rate, it is possible to significantly reduce the progress of etching due to the reflection source (r) compared to the standard method. The method is not limited to the method described above, and as described in the examples, n can be brought into a radical state on the etching gas.
It is obvious that a method using microwave discharge or a method using light may be used.
第２図は尤によるラジカル化の方法を示す〇石英製前処
理室１１の外部よシｊｔ＃１１８の元がばクー１９、レ
ンズ２０および２１＃Ｃよって前処理室１１内に入射さ
せらｎる元の照射によシ前処理室１１のエツチングガス
がラジカル化される０ｍ３図はマイクロ波によるラジカ
ル化の方法を示す。前処理室１１の周囲に尋波管２５が
設けられ、マグネトロン２４よりマイクロ波が供給さｎ
る。前処理室１１の外部にはマグネット２２があり、前
処理室部分で電子ブイクロトロン共鳴の条件に゛なって
いる。エツチングガスは前処理室１１内でこのマイクロ
波により１９ズマ状態となる。また、光源にクー【もエ
キシマレーザに限定さｎるものではなく、被エツチング
編と吸着ガスを反応させる１１００−３００ｎの波長の
ｊｔｉｔ−発生させる尤諒であれはよい。Fig. 2 shows a method of radicalization by means of a method in which the source of the quartz pretreatment chamber 11 is made to enter the pretreatment chamber 11 through the bag 19, lenses 20, and 21#C. The etching gas in the pretreatment chamber 11 is converted into radicals by the original irradiation. The 0m3 diagram shows a method of radicalization using microwaves. A microwave tube 25 is provided around the pretreatment chamber 11, and microwaves are supplied from a magnetron 24.
Ru. A magnet 22 is provided outside the pretreatment chamber 11, and the conditions for electron bichrotron resonance are established in the pretreatment chamber portion. The etching gas is brought into a state of 19 degrees by the microwaves in the pretreatment chamber 11. Further, the light source is not limited to an excimer laser, but may be any light source that generates light having a wavelength of 1100 to 300 nm, which causes the film to be etched to react with the adsorbed gas.
さらに、微細なパターンを形成する方法にり ）いて
も、特開昭５８−６５１５６号に開示されているように
マスクｔ−遡した光を用い、レジストを塗布せずにエツ
チングを行なう方法、および基板表＠にレジストのマス
クを形成し、レジストマスクの囲口邪のみｒエツチング
する方法のいず几も用いることができることは明らかで
ある。Furthermore, even if there is a method for forming a fine pattern, there is also a method of etching without applying a resist using a mask t-reverse light as disclosed in Japanese Patent Application Laid-Open No. 58-65156, and It is clear that any method of forming a resist mask on the surface of the substrate and etching only the edges of the resist mask can be used.
以上説明した通り、本発明によれば、尤を用いているの
で半得体デバイスへの損傷がない特長があり、かつエツ
チングレートを上げた時のサイドエラチングミｋ従来の
数分の１に低減することができる。そのため光を用いた
ドライエツチング’ｉ１Ｊａｍ以下のパターン形成に適
用する際の処理Ｉｉ目カを縄めることができるという効
果が侍らルる。As explained above, according to the present invention, since the etching is used, there is no damage to the semiconductor device, and when the etching rate is increased, the side etching is reduced to a fraction of that of the conventional method. can do. Therefore, the effect of reducing the processing power when applied to pattern formation below dry etching 'i1Jam using light is achieved.
第１図は本発明によるドライエツチング装置の模式的な
慣成図、第２図２よび＠６図はそｎぞれ元およびマイク
ロ波によるエツチングガスのラジカル化の方法を示す本
発明によるドライエツチング装置の−ｓ憐成図である。
１・・・処理室 ２・・・上蓋３・・・窓
４・・・下蓋５・・・基板ステージ
６・・・基板７・・・レーザ装置
８．１０，２０．２１・・・レンズ
９．１９・・・ミラー
１１・・・前処理室１２・・・ガス供給管１３・・・容
量結合型電極 １４・・・高周波電源１５・・・金網
１６・・・排気口１７・・・元均−化
素子 １８・・・′／を源２２・・・マグネット
２３・・・尋波管２４・・・マグネトロン。
代理人３ｆ理士 高 傭 明 夫
第２図
第 ３ 図FIG. 1 is a schematic conventional diagram of a dry etching apparatus according to the present invention, and FIG. 2 and FIG. This is a diagram of the device. 1...Processing chamber 2...Upper lid 3...Window 4...Lower lid 5...Substrate stage
6... Substrate 7... Laser device 8.10, 20.21... Lens 9.19... Mirror 11... Pretreatment chamber 12... Gas supply pipe 13... Capacitive coupling type Electrode 14... High frequency power source 15... Wire mesh 16... Exhaust port 17... Source equalizing element 18...'/ Source 22... Magnet 23... Wave tube 24...・Magnetron. Agent 3F Physician Akio Takashi Figure 2 Figure 3
Claims (1)
を流し、上記被処理基板に光を照射しながらエッチング
を行なうドライエッチング装置において、導入するエッ
チングガスを処理室に入れる前にラジカル化する前処理
室を具備することを特徴とするドライエッチング装置。 ２、エッチングガスのラジカル化が高周波電力を印加す
ることによつて行なわれることを特徴とする、特許請求
の範囲第１項記載のドライエッチング装置。 ３、エッチングガスのラジカル化が、マイクロ波および
マイクロ波電子サイクロトロン共鳴によつて行なわれる
ことを特徴とする、特許請求の範囲第１項記載のドライ
エッチング装置。 ４、エッチングガスのラジカル化が光によつて行なわれ
ることを特徴とする、特許請求の範囲第１項記載のドラ
イエッチング装置。[Claims] 1. In a dry etching apparatus in which a substrate to be processed is installed in a processing chamber, an etching gas is caused to flow, and the substrate to be processed is etched while being irradiated with light, the etching gas is introduced into the processing chamber. A dry etching apparatus characterized by comprising a pre-treatment chamber that converts into radicals before entering the dry etching apparatus. 2. The dry etching apparatus according to claim 1, wherein the etching gas is radicalized by applying high frequency power. 3. The dry etching apparatus according to claim 1, wherein radicalization of the etching gas is performed by microwave and microwave electron cyclotron resonance. 4. The dry etching apparatus according to claim 1, wherein the etching gas is radicalized by light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26271484A JPS61141141A (en) | 1984-12-14 | 1984-12-14 | Dry etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26271484A JPS61141141A (en) | 1984-12-14 | 1984-12-14 | Dry etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61141141A true JPS61141141A (en) | 1986-06-28 |
Family
ID=17379569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26271484A Pending JPS61141141A (en) | 1984-12-14 | 1984-12-14 | Dry etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61141141A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6336532A (en) * | 1986-07-30 | 1988-02-17 | Tokyo Electron Ltd | Antidim device for light introducing window |
| JPH025523A (en) * | 1988-06-24 | 1990-01-10 | Anelva Corp | Plasma treating device |
| US5284544A (en) * | 1990-02-23 | 1994-02-08 | Hitachi, Ltd. | Apparatus for and method of surface treatment for microelectronic devices |
| US5462635A (en) * | 1991-01-29 | 1995-10-31 | Hitachi, Ltd. | Surface processing method and an apparatus for carrying out the same |
| JP2014183092A (en) * | 2013-03-18 | 2014-09-29 | Denso Corp | Semiconductor device manufacturing method and dry etching device used therefor |
-
1984
- 1984-12-14 JP JP26271484A patent/JPS61141141A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6336532A (en) * | 1986-07-30 | 1988-02-17 | Tokyo Electron Ltd | Antidim device for light introducing window |
| JPH025523A (en) * | 1988-06-24 | 1990-01-10 | Anelva Corp | Plasma treating device |
| US5284544A (en) * | 1990-02-23 | 1994-02-08 | Hitachi, Ltd. | Apparatus for and method of surface treatment for microelectronic devices |
| US5462635A (en) * | 1991-01-29 | 1995-10-31 | Hitachi, Ltd. | Surface processing method and an apparatus for carrying out the same |
| JP2014183092A (en) * | 2013-03-18 | 2014-09-29 | Denso Corp | Semiconductor device manufacturing method and dry etching device used therefor |
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