JPS61139032A - シリコン・エツチング法 - Google Patents

シリコン・エツチング法

Info

Publication number
JPS61139032A
JPS61139032A JP26146784A JP26146784A JPS61139032A JP S61139032 A JPS61139032 A JP S61139032A JP 26146784 A JP26146784 A JP 26146784A JP 26146784 A JP26146784 A JP 26146784A JP S61139032 A JPS61139032 A JP S61139032A
Authority
JP
Japan
Prior art keywords
layer
silicon
wafer
type layer
alkaline solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP26146784A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0410737B2 (enExample
Inventor
Kyoichi Ikeda
恭一 池田
Katsumi Isozaki
克巳 磯崎
Tetsuya Watanabe
哲也 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP26146784A priority Critical patent/JPS61139032A/ja
Publication of JPS61139032A publication Critical patent/JPS61139032A/ja
Publication of JPH0410737B2 publication Critical patent/JPH0410737B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP26146784A 1984-12-11 1984-12-11 シリコン・エツチング法 Granted JPS61139032A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26146784A JPS61139032A (ja) 1984-12-11 1984-12-11 シリコン・エツチング法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26146784A JPS61139032A (ja) 1984-12-11 1984-12-11 シリコン・エツチング法

Publications (2)

Publication Number Publication Date
JPS61139032A true JPS61139032A (ja) 1986-06-26
JPH0410737B2 JPH0410737B2 (enExample) 1992-02-26

Family

ID=17362304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26146784A Granted JPS61139032A (ja) 1984-12-11 1984-12-11 シリコン・エツチング法

Country Status (1)

Country Link
JP (1) JPS61139032A (enExample)

Also Published As

Publication number Publication date
JPH0410737B2 (enExample) 1992-02-26

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