JPS61135121A - Aperture mask for beam formation - Google Patents

Aperture mask for beam formation

Info

Publication number
JPS61135121A
JPS61135121A JP25793184A JP25793184A JPS61135121A JP S61135121 A JPS61135121 A JP S61135121A JP 25793184 A JP25793184 A JP 25793184A JP 25793184 A JP25793184 A JP 25793184A JP S61135121 A JPS61135121 A JP S61135121A
Authority
JP
Japan
Prior art keywords
aperture
diamond
knife edge
mask
supporter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25793184A
Other languages
Japanese (ja)
Inventor
Mamoru Nakasuji
護 中筋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP25793184A priority Critical patent/JPS61135121A/en
Publication of JPS61135121A publication Critical patent/JPS61135121A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Abstract

PURPOSE:To contrive the improvement of machining accuracy and heat resistance by making a coated conductive film on the surface of a knife edge of one side extended externally from a supporter made of a metal plate and one of diamond, sapphire or ruby. CONSTITUTION:A supporter 10 made of a metal plate is a half of circular disk, a recession 11 is provided at the center and a knife edge from 20 made of 100mum thick diamond is attached on the upper surface of the center of the recession 11 of the supporter 10. The form 20 has two surfaces 22, 23 to form a knife edge 21 which are polished to a mirror surface of lambda/10 or less and the surface of the form 20 is coated with a high melting point metal such as tungsten or molybdenum. The form 20 is attached on the upper surface of the supporter 10 brazed at an oblique area 30. Since the knife edge 21 which constitutes each side of an aperture 50 is made of diamond, machining accuracy can be made extremely high and exposure accuracy can be improved since the area irradiated by a beam is highly heat-resistant diamond.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、荷電ビーム露光装置等に用いられるビーム成
形用アパーチャマスクの改良に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to improvements in beam shaping aperture masks used in charged beam exposure apparatuses and the like.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

近年、半導体ウェハやマスク基板等の試料上に所望パタ
ーンを形成するものとして、各種の電子ビーム露光装置
が開発されている。この種の電子ビーム露光装置では、
高スルーブツト化及び高精度化するための要求として、 ■ ビーム電流を大きくする ■ 成形ビームの寸法精度を向上させる■ より小さい
駆動電源で光学鏡筒を駆動する等のことが挙げられる。
In recent years, various electron beam exposure apparatuses have been developed to form desired patterns on samples such as semiconductor wafers and mask substrates. In this type of electron beam exposure equipment,
Requirements for higher throughput and higher precision include: ■ Increasing the beam current; ■ Improving the dimensional accuracy of the shaped beam; and driving the optical lens barrel with a smaller drive power source.

これらの要求を同時に満たす一つの方法として、ビーム
成形用アパーチャマスクを高精度化・高耐熱化し、小径
の7バーチヤを有するアパーチャマスクを大きい電流密
度のビームで照射することによって、後の光学系での縮
小率を比較的小さくする方法が考えられる。即ち、アパ
ーチャマスクを照射する電流密度を高くすると、後の光
学系での縮小率があまり高くなくても大きい電流密度が
得られる。さらに、アパーチャが小さければ、1−aB
5電子銃の如きビーム放射角の小さい電子銃を用いても
、あまりビームを拡大せずにアパーチャマスクを照明で
きる。しかも、縮小率が小さければレンズ系も小さくな
り、電子銃からターゲットまでの距離を短くでき、空間
電荷効果を小さく抑えられるため、大きい電流にしても
ビーム分解能は落ちない。また、アパーチャが小さいた
め、ビーム寸法を変化させる時ビームを偏向する量が少
なくて済み、小さい駆動電圧でビーム寸法を可変するこ
とができる。
One way to simultaneously meet these requirements is to improve the precision and heat resistance of the aperture mask for beam shaping, and to irradiate the aperture mask with a small diameter of 7 vertices with a beam of high current density. One possible method is to make the reduction ratio relatively small. That is, by increasing the current density that irradiates the aperture mask, a large current density can be obtained even if the reduction ratio in the subsequent optical system is not very high. Furthermore, if the aperture is small, 1-aB
Even if an electron gun with a small beam radiation angle, such as a five-electron gun, is used, the aperture mask can be illuminated without greatly expanding the beam. Moreover, if the reduction ratio is small, the lens system will be small, and the distance from the electron gun to the target can be shortened, and the space charge effect can be kept small, so even if the current is large, the beam resolution will not deteriorate. Further, since the aperture is small, the amount of deflection of the beam when changing the beam size is small, and the beam size can be changed with a small driving voltage.

しかしながら、従来のビーム成形用アパーチャマスクで
は、耐熱性が不十分であり、上記のように大きいビーム
電流密度のビームで照明することはできなかった。さら
に、加工精度が不十分であり、上記のような小径のアパ
ーチャを精度良く形成することはできなかった。ここで
、アパーチャの径が小さくなる程、光学系での縮小率が
小さくなるので、高い加工精度が要求されるのである。
However, conventional aperture masks for beam shaping have insufficient heat resistance and cannot be used for illumination with a beam having a large beam current density as described above. Furthermore, the machining accuracy was insufficient, and it was not possible to form the above-mentioned small-diameter apertures with high precision. Here, as the diameter of the aperture becomes smaller, the reduction ratio in the optical system becomes smaller, so higher processing accuracy is required.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、加工精度及び耐熱性の向上をはかるこ
とができ、電子ビーム露光装置の高スループツト化及び
露光精度の向上等に寄与し得るビーム成形用アパーチャ
マスクを提供することにある。
An object of the present invention is to provide an aperture mask for beam shaping that can improve processing accuracy and heat resistance, and can contribute to increasing the throughput of an electron beam exposure apparatus and improving exposure accuracy.

〔発明のi要〕[Key points of the invention]

本発明の骨子は、アパーチャのナイフェツジ及びビーム
照射される面をダイヤモンド、サファイア或いはルビー
等の高融点・高硬度の単結晶で形成することにある。
The gist of the present invention is to form the knife edge of the aperture and the surface to which the beam is irradiated from a single crystal with a high melting point and high hardness, such as diamond, sapphire, or ruby.

硬度の大きい結晶は一般に高精度の研磨が可能であり、
特にダイヤモンドでは表面粗さをλ/10−0.06 
[μTrL]以下にすることも容易である。従って、λ
/10の表面粗さを持つ2つの面でナイフェツジを作れ
ば、そのエツジラフネスはλ/10以下にできる。ダイ
ヤモンドの大きい板は高価なので、ビームが入射する部
分のみをダイヤモンドで作り、その周辺を金属板に取着
すれば、比較的ローコストに実現することが可能である
Crystals with high hardness can generally be polished with high precision,
Especially for diamond, the surface roughness is λ/10-0.06
It is also easy to make it less than [μTrL]. Therefore, λ
If a knife edge is made of two surfaces with a surface roughness of λ/10, the edge roughness can be reduced to λ/10 or less. A large diamond plate is expensive, so if only the part where the beam enters is made of diamond and the surrounding area is attached to a metal plate, it can be realized at a relatively low cost.

本発明はこのような点に着目し、複数のマスク体を組合
わせて所定形状のアパーチャを形成してなるビーム成形
用アパーチャマスクにおいて、前記各マスク体を、金属
板からなる支持体と、ダイヤモンド、サファイア及びル
ビーの少なくとも一つからなり、且つその一辺が上記支
持体の一辺より外側に突出してナイフェツジ面をなすよ
うに上記支持体に取着されたナイフェツジ形成体と、こ
の形成体の表面にコーティングされた導NW4とで構成
するようにしたものである。
The present invention has focused on such points, and provides an aperture mask for beam shaping in which a plurality of mask bodies are combined to form an aperture of a predetermined shape. , a knife forming body made of at least one of sapphire and ruby, and attached to the support so that one side thereof projects outward from one side of the support to form a knife surface; It is constructed of a coated conductive NW 4.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、ナイフェツジ及びビーム照射される面
をダイヤモンド等の高融点・高硬度の単結晶で形晟して
いるので、ナイフェツジを高精度に加工することができ
、且つビームの当たる部分の耐熱性を著しく向上させる
ことができる。このため、本発明によるビーム成形用ア
パーチャを、ビーム電流密度の大きいビームで照射する
ことができる。従って、例えば電子ビーム露光装置に適
用した場合、露光の高スループツト化及び露光精度の向
上をは−かり得る。また、従来装置ではターゲットまで
のビーム縮小率は1/40〜1/200が用いられてい
たが、本発明によりアパーチャの径を小さくできるので
ビーム縮小率を1/10程度にすることができる。これ
により、光学状筒長を172)にすることができ、ビー
ム寸法を変えることなく、駆動電源電圧を1/2にする
こともできる。
According to the present invention, since the knife edge and the surface to which the beam is irradiated are shaped with a high-melting-point, high-hardness single crystal such as diamond, the knife edge can be processed with high precision, and the part that is irradiated with the beam can be processed with high precision. Heat resistance can be significantly improved. Therefore, the beam shaping aperture according to the present invention can be irradiated with a beam having a high beam current density. Therefore, when applied to an electron beam exposure apparatus, for example, it is possible to increase exposure throughput and improve exposure accuracy. Further, in the conventional apparatus, a beam reduction ratio of 1/40 to 1/200 was used to reach the target, but the present invention allows the diameter of the aperture to be made small, so that the beam reduction ratio can be reduced to about 1/10. As a result, the optical cylinder length can be set to 172), and the driving power supply voltage can be halved without changing the beam dimensions.

(発明の実施例〕 以下、本発明の詳細を図示の実施例によって説明する。(Example of the invention) Hereinafter, details of the present invention will be explained with reference to illustrated embodiments.

第1図は本発明の一実施例に係わるビーム成形用アパー
チャマスクを説明するためのもので、マスク体の概略構
成を示す斜視図である。図中10は金属板からなる支持
体であり、この支持体10は円板を1/2に分割し中央
部に凹部11を設けて形成されている。支持体10の凹
部11の中央部上面には、100[μm]厚のダイヤモ
ンドからなるナイフェツジ形成体20が取着されている
FIG. 1 is a perspective view showing a schematic configuration of a mask body, for explaining an aperture mask for beam shaping according to an embodiment of the present invention. In the figure, 10 is a support made of a metal plate, and this support 10 is formed by dividing a disk into 1/2 and providing a recess 11 in the center. A knife forming body 20 made of diamond and having a thickness of 100 μm is attached to the upper surface of the central portion of the recess 11 of the support 10 .

この形成体2oは、第2図に示す如くナイフェツジ21
を形成する2つの面22.23をλ/10以下の鏡面に
研磨されている。
This formed body 2o is formed by a knife 21 as shown in FIG.
The two surfaces 22 and 23 forming the surface are polished to a mirror surface of λ/10 or less.

また、図には示さないが、形成体20の表面には、タン
グステンやモリブデン等の高融点金属膜がコーティング
されている。そして、形成体20は図に示す斜線部30
をロウ付けにより支持体10の上面に取着されている。
Further, although not shown in the figure, the surface of the formed body 20 is coated with a film of a high melting point metal such as tungsten or molybdenum. The formed body 20 has a hatched portion 30 shown in the figure.
is attached to the upper surface of the support body 10 by brazing.

なお、図中40は支持体10に設けられたノック穴であ
り、この穴40はナイフェツジ21を見ながら位置決め
を行って形成される。
In addition, 40 in the figure is a dowel hole provided in the support body 10, and this hole 40 is formed by positioning while looking at the knife 21.

上記構成されたマスク体を用いて、例えば矩形状のアパ
ーチャを有するアパーチャマスクを作るには、マスク体
を4枚組合わせて、第3図に示す如く隣接するナイフェ
ツジ21 (211,212。
To make an aperture mask having, for example, a rectangular aperture using the mask body configured as described above, four mask bodies are combined and adjacent knifes 21 (211, 212) are formed as shown in FIG.

213.214 )が直交するように配置すればよい。213, 214) are orthogonal to each other.

このとき、マスク体の厚みを200[μm]とすると、
アパーチャの厚みは (枚数−1)×200 [μTrL] となり、4枚では600[μm]となる。しかし、1/
10の縮小率の光学系では、焦点深度がターゲット上で
の焦点深度の100倍であるので、±5[μm:lのタ
ーゲット上での焦点深度の場合、1[Im]の焦点深度
がアパーチャであるので600[μm]は何等問題とな
らない。
At this time, if the thickness of the mask body is 200 [μm],
The thickness of the aperture is (number of sheets - 1) x 200 [μTrL], and for four sheets, it is 600 [μm]. However, 1/
In an optical system with a reduction ratio of 10, the depth of focus is 100 times the depth of focus on the target, so for a depth of focus on the target of ±5 [μm:l, a depth of focus of 1 [Im] is the aperture. Therefore, 600 [μm] does not pose any problem.

このように構成されたビーム成形用アパーチャマスクに
おいては、アパーチャ50の各辺をなすナイフェツジ2
1がダイヤモンドで形成されているので、アパーチャ5
0の加工精度を極めて高くすることができる。このため
、小径の7バーチヤであってもその精度を十分に保持し
て形成することができる。ざらに、ビームに照射される
部分が高耐熱性のダイヤモンドであるため、ビーム電流
密度の大きいビームを用いることができる。従って、例
えば電子ビーム露光装置に適用した場合、小径の7バー
チヤをと−ム電流密度の大きいビーム、で照明できるこ
とになり、露光スルーブツト及び露光精度の向上等をは
かり得る。
In the beam shaping aperture mask configured in this way, the knife edges 2 forming each side of the aperture 50 are
Since aperture 1 is made of diamond, aperture 5
0 processing accuracy can be made extremely high. Therefore, even a small-diameter 7-vertia can be formed with sufficient accuracy. In general, since the portion irradiated by the beam is made of highly heat-resistant diamond, a beam with a high beam current density can be used. Therefore, when applied to, for example, an electron beam exposure apparatus, it is possible to illuminate seven beams with a small diameter with a beam having a large beam current density, and it is possible to improve exposure throughput and exposure accuracy.

なお、本発明は上述した実施例に限定されるものではな
い。例えば、前記ナイフェツジ形成体を形成する部材は
ダイヤモンドに限るものではなく、高融点・高硬度の単
結晶であるサファイアやルビー等を用いることも可能で
ある。また、アパーチャの形状は矩形に限るものではな
く、適宜変更可能である。さらに、2つのビーム成形用
アパーチャを用い、第2図に示す如くアパーチャ501
゜502の重なりを利用して矩形状の可変寸法ビームを
形成する場合、アパーチャ501の各辺61゜〜、64
の2辺63.64及びアパーチャ502の各辺71.〜
,74の2辺71.72のみをダイヤモンド等からなる
ナイフェツジで形成すればよい。また、ナイフェツジ形
成体の支持体への取着はロウ付げに限るものではなく、
ねじ止めその他の手法を用いることが可能である。さら
に、電子ビーム露光装置に限らず、イオンビーム露光装
置、その他ビームを成形する必要のある各種の装置に適
用することができる。要するに本発明は、その要旨を逸
脱しない範囲で、種々変形して実施することができる。
Note that the present invention is not limited to the embodiments described above. For example, the member forming the knife formation body is not limited to diamond, but sapphire, ruby, etc., which are single crystals with a high melting point and high hardness, can also be used. Further, the shape of the aperture is not limited to a rectangle, and can be changed as appropriate. In addition, two beam shaping apertures are used, and the aperture 501 as shown in FIG.
When forming a rectangular variable dimension beam using an overlap of 502 degrees, each side of the aperture 501 is 61 degrees to 64 degrees.
and each side 71. of the aperture 502. ~
, 74, only the two sides 71 and 72 may be formed of knife blades made of diamond or the like. In addition, attachment of the knife formation body to the support body is not limited to brazing,
It is possible to use screws or other methods. Furthermore, the present invention is applicable not only to electron beam exposure apparatuses but also to ion beam exposure apparatuses and other various apparatuses that require beam shaping. In short, the present invention can be implemented with various modifications without departing from the gist thereof.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例に係わるビーム成形用アパー
チャーマスクを説明するためのものでマスク体の概略構
成を示す斜視図、第2図はナイフェツジ部を拡大して示
す平面図、第3図はマスク体を組合せて矩形状の7バー
チヤを作成した例を示す模式図、第4図は変形例を説明
するための模式図である。 10・・・支持体、11・・・凹部、20,201.〜
。 204・・・ナイフェツジ形成体、21,211.〜。 214・・・ナイフェツジ、22.23・・・ナイフェ
ツジ形成面、30・・・ロウ付は部、40・・・ノック
穴、50.50s 、502・・・アパーチャ。 出願人代理人 弁理士 鈴江武彦 窃 第2図 第3図
FIG. 1 is a perspective view showing a schematic structure of the mask body for explaining an aperture mask for beam shaping according to an embodiment of the present invention, FIG. 2 is a plan view showing an enlarged knife portion, and FIG. The figure is a schematic diagram showing an example in which seven rectangular virtuaries are created by combining mask bodies, and FIG. 4 is a schematic diagram for explaining a modified example. DESCRIPTION OF SYMBOLS 10... Support body, 11... Recessed part, 20,201. ~
. 204... Naifetsuji formation, 21,211. ~. 214... knife hole, 22.23... knife forming surface, 30... brazing part, 40... dowel hole, 50.50s, 502... aperture. Applicant's agent Patent attorney Takehiko Suzue Plagiarism Figure 2 Figure 3

Claims (3)

【特許請求の範囲】[Claims] (1)複数のマスク体を組合せて所定形状のアパーチャ
を形成してなるビーム成形用アパーチャマスクにおいて
、前記各マスク体は、金属板からなる支持体と、ダイヤ
モンド、サファイア及びルビーの少なくとも一つからな
り、且つその一辺が前記支持体の一辺より外側に突出し
てナイフエッジをなすよう前記支持体に取着されたナイ
フエッジ形成体と、この形成体の表面にコーティングさ
れた導電膜とを具備してなることを特徴とするビーム成
形用アパーチャマスク。
(1) In a beam shaping aperture mask formed by combining a plurality of mask bodies to form an aperture of a predetermined shape, each mask body is made of a support body made of a metal plate and at least one of diamond, sapphire, and ruby. and a knife edge forming body attached to the support such that one side thereof projects outward from one side of the support to form a knife edge, and a conductive film coated on the surface of the forming body. An aperture mask for beam shaping that is characterized by
(2)前記アパーチャは、矩形状に形成されたものであ
ることを特徴とする特許請求の範囲第1項記載のビーム
成形用アパーチャマスク。
(2) The aperture mask for beam shaping according to claim 1, wherein the aperture is formed in a rectangular shape.
(3)前記ナイフエッジ形成体は、前記支持体にロウ付
けされていることを特徴とする特許請求の範囲第1項記
載のビーム成形用アパーチャマスク。
(3) The aperture mask for beam shaping according to claim 1, wherein the knife edge forming body is brazed to the support body.
JP25793184A 1984-12-06 1984-12-06 Aperture mask for beam formation Pending JPS61135121A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25793184A JPS61135121A (en) 1984-12-06 1984-12-06 Aperture mask for beam formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25793184A JPS61135121A (en) 1984-12-06 1984-12-06 Aperture mask for beam formation

Publications (1)

Publication Number Publication Date
JPS61135121A true JPS61135121A (en) 1986-06-23

Family

ID=17313182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25793184A Pending JPS61135121A (en) 1984-12-06 1984-12-06 Aperture mask for beam formation

Country Status (1)

Country Link
JP (1) JPS61135121A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9194189B2 (en) 2011-09-19 2015-11-24 Baker Hughes Incorporated Methods of forming a cutting element for an earth-boring tool, a related cutting element, and an earth-boring tool including such a cutting element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9194189B2 (en) 2011-09-19 2015-11-24 Baker Hughes Incorporated Methods of forming a cutting element for an earth-boring tool, a related cutting element, and an earth-boring tool including such a cutting element
US9771497B2 (en) 2011-09-19 2017-09-26 Baker Hughes, A Ge Company, Llc Methods of forming earth-boring tools

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