JPH09102449A - Charged particle beam exposure method and device and molding diaphragm and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reading manufacture a molding diaphragm of enough strength by enabling charged particle beam of high energy to be used and making a transfer device enough sharp. SOLUTION: A molding diaphragm 30 is fixed to a holder by a bolt by combining diaphragm pieces 31 to 34 of the same configuration. In a diaphragm piece, a part of two surfaces which are adjoining through a longitudinal side of a rectangular board is chamfered and edges 312, 322, 332 and 342 are left. The diaphragm pieces 31 and 32 are arranged parallel mutually with edges in opposition. The diaphragm pieces 33 and 34 are arranged at right angles to the diaphragm pieces 31 and 32 with edges in opposition. The diaphragm pieces 31 and 32 and the diaphragm pieces 33 and 34 are superposed with edges adjoining each other. A rectangular aperture 30a which is enclosed with edges of the diaphragm pieces 31 to 34 is formed in this way.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and apparatus for irradiating an object to be exposed with a charged particle beam such as an electron beam or an ion beam, a molding diaphragm used in this apparatus, and a manufacturing method thereof.

[0002]

2. Description of the Related Art FIG. 4 shows a schematic structure of a charged particle beam exposure apparatus. Between the electron gun 10 and the semiconductor wafer 11 to be exposed, the forming diaphragms 12, 13 are arranged along the optical axis.
And a focusing angle diaphragm 14 are arranged. The electromagnetic lenses 21 to 25 are arranged such that the longitudinal section of the electron beam emitted from the electron gun 10 is magnified in the direction of the optical axis to be 15.
Is arranged. The electromagnetic lens 21 is composed of electromagnetic lenses 21A and 21B arranged so as to sandwich the shaping diaphragm 12, and the electron beam collimated by the electromagnetic lens 21A passes through the rectangular aperture 12a of the shaping diaphragm 12 to form a rectangular cross section. To be done. Similarly, the electromagnetic lens 22 is used for forming the diaphragm 1.
Electron beams 22A and 22B arranged so as to sandwich 3 are collimated by the electromagnetic lens 22A, and the electron beam is further shaped through the rectangular aperture 13a of the shaping diaphragm 13. The electromagnetic lenses 23 and 24 are for reducing an image, and the electromagnetic lens 25 is an objective lens for forming an image on the semiconductor wafer 11.

When the electron beam is deflected by the deflector 26,
The cross section of the electron beam on the forming diaphragm 13 is shown in FIG.
As shown in FIG. 3A, only the hatched portion 16 passes through the rectangular aperture 13a and is projected on the semiconductor wafer 11 in a reduced scale. Therefore, the cross section of the electron beam can be shaped into a rectangle according to the voltage applied to the deflector 26.

In FIG. 4, a blanking deflector for turning on / off the electron beam passing through the focusing angle diaphragm 14 and a deflector for deflecting the electron beam to a target position on the semiconductor wafer 11 are not shown. . FIG. 6A shows a part of a vertical cross section along the center line of the conventional configuration of the forming diaphragm 13. The forming diaphragm 13A is formed by forming a quadrangular pyramid trapezoidal hole in a silicon thin plate by a photolithography technique, and the edge of the rectangular aperture 13a can be sharply sharpened at the atomic level. The width becomes almost 0, and when the electron beam energy is low, the projected image on the semiconductor wafer 11 becomes sharp. For example, the length of one side of the forming diaphragm 13A is 200 μm.
And the reduction ratio is 1/100. When the shaped beam cross section 16 of FIG. 5 is 10 μm × 10 μm, the length of one side of the projected image on the semiconductor wafer 11 is 0.1 μm.

The lower the energy of the electron beam is, the more the exposure by the electrons scattered forward in the resist film on the semiconductor wafer 11 and the electrons back-scattered in the silicon substrate and re-incident in the resist film occurs, resulting in collision. Since the cross-sectional area becomes large and the exposure intensity distribution becomes gentle, the width of 0.1
In order to sharply transfer a thin pattern of about μm, it is necessary to use a high energy electron beam of about 50 KV. In this case, since a part of the electron beam passes through the edge of the rectangular aperture 13a, the current density on the semiconductor wafer 11 becomes as shown in FIG. 6B, which causes the sharpness of the transfer pattern to decrease. Further, the edge of the rectangular aperture 13a is melted and cannot be used. If the current value of the electron beam is reduced in order to prevent melting, the exposure time for obtaining the required exposure amount becomes longer and the exposure throughput decreases. As the electron beam energy increases, the collision cross-sectional area on the semiconductor wafer 11 decreases, resulting in a marked decrease in throughput.

Therefore, as shown in FIG. 6 (C), a molding diaphragm 13B in which a Ta film 131 is deposited on a Si molding diaphragm 13A is used. Ta is a heavy metal having a high melting point, good adherence to Si, and a thermal expansion coefficient close to that of Si. The range of 50 KV electrons in a substance (the average value of the distance at which electrons rest due to collision) is 16.9 μm for Si, while Ta is Ta.
Is 2.4 μm. The melting point of Si is 1410 ° C.
Whereas Ta is 2990 ° C.

However, when an electron beam of 50 KV is used, the electron beam is impacted on the Ta film 131 and the Ta film 13 is exposed.
1 and the drawing aperture 13A, the Ta film 1
31 is peeled off, and the edge of the rectangular aperture 13a is melted. Mo is a heavy metal having a high melting point and relatively good workability. When a rectangular aperture is formed in Mo, a radius with a radius of curvature of about 10 to 20 μm occurs at the corner, and the allowable value is 0.5 μm.
Much larger. Therefore, as shown in FIGS. 7A to 7C, slits 132 and 133 are formed in the shaping apertures 13C1 and 13C2, respectively, and the shaping apertures 13C1 and 13C2 are overlapped so that they are orthogonal to each other, and the rectangular aperture is formed. A molding diaphragm 13C having 13a has been proposed (JP-A-59-111326).

However, since the slits 132 and 133 having a width of about 200 to 500 μm cannot be formed by machining and must be dry-etched, the thickness must be several tens of μm. For this reason, the strength of the forming stop 13C is too weak, and it is difficult to fix the forming stop 13C to the holder without bending. Further, there has been proposed one in which four Mo disks are stacked to form a rectangular aperture (Japanese Patent Laid-Open No. 59-113326), but the edge of the rectangular aperture 13a becomes too thick and the transferred image Sharpness is poor.

[0009]

SUMMARY OF THE INVENTION In view of the above problems, it is an object of the present invention to use a charged particle beam of high energy and to provide a charged particle beam exposure method and apparatus which has a sufficient sharpness of a transferred image. Another object of the present invention is to provide a molded squeeze having sufficient strength and easily manufactured, and a manufacturing method thereof.

[0010]

According to a first aspect of the present invention, in a charged particle beam exposure apparatus in which a shaping diaphragm for shaping the cross section of a charged particle beam into a rectangular shape is arranged, the shaping diaphragm is a plate. The first to fourth diaphragm pieces, which are chamfered on adjacent two surfaces of the linear end portions thereof to leave edges of width e, and a holder to which the first to fourth diaphragm pieces are fixed, The first diaphragm piece and the second diaphragm piece are arranged in parallel with each other with their edges facing each other, and the third diaphragm piece and the fourth diaphragm piece have their edges opposed to each other and the first diaphragm piece and the The first diaphragm piece and the second diaphragm piece and the second diaphragm piece and the third diaphragm piece are arranged at a right angle to the second diaphragm piece, and the first diaphragm piece and the third diaphragm piece are overlapped with their edges close to each other, and A rectangular aperture for forming a charged particle beam surrounded by the edges of the four diaphragm pieces is formed.

According to the first aspect of the present invention, the first to fourth drawn pieces can be formed by machining, such as Mo, which has a high melting point and is easy to machine, so that it is easy to manufacture and has a high energy. A charged particle beam can be used. Also, the first to the fourth
Since the aperture pieces are combined as described above to form a rectangular aperture surrounded by the edges of the first to fourth aperture pieces, by setting the edge width e to an appropriate value, the sharpness of the transferred image can be sufficiently increased. can do.

Further, the longitudinal positions of the first to fourth aperture pieces can be adjusted and fixed to the holder so that the surface roughness of the edge portion forming the rectangular aperture becomes equal to or less than the upper limit value, and the yield is increased. Get better. Further, even when the surface roughness exceeds the upper limit value by use, it can be adjusted in the same manner as described above to be equal to or less than the upper limit value, so that the life of the forming squeeze is extended.

In the first aspect of the first invention, the width e is e
≦ εM / (2 tan θ), which is equal to or greater than the range of charged particles and equal to or greater than the lower limit value at which machining can be performed, where ε is a permissible error M of the width of a pattern to be exposed on an exposure target : Projection reduction ratio of the rectangular aperture onto the exposure target object θ: Convergence half-angle of the charged particle beam incident on the exposure target object.

According to the first aspect, since the edge can be machined, the forming diaphragm can be easily manufactured, and the edge width e is equal to or larger than the range of the charged particles. Therefore, the charged particle beam is transferred by passing through the edge. It is possible to prevent the sharpness of the image from being deteriorated, and since e ≦ εM / (2 tan θ), the exposure pattern becomes accurate. In the second aspect of the first invention, the surface roughness Δd of the edge is Δd ≦ ε · M in the portion where the rectangular aperture is formed.

According to the second aspect, the exposure pattern becomes accurate. In a third aspect of the first aspect of the invention, each of the first to fourth diaphragm pieces is provided with holes passing through the first to fourth diaphragm pieces and the holder at both ends and a portion on the holder. A pin is driven into the hole and the first to fourth aperture pieces are fixed to the holder. According to the third aspect, the displacement of the first to fourth diaphragm pieces with respect to the holder due to thermal expansion is prevented, so that the life of the molding diaphragm is extended.

In a fourth aspect of the first invention, each of the first to fourth aperture pieces has elongated holes at both ends thereof, and the longitudinal direction of the elongated holes is parallel to the edge of the aperture piece. A bolt is inserted in the long hole to fix the diaphragm piece to the holder. According to the fourth aspect, it becomes easy to adjust the surface roughness of the edge portion forming the rectangular aperture to the upper limit value or less.

In the fifth aspect of the first invention, the first to fourth diaphragm pieces are formed by chamfering a part of two surfaces adjacent to each other through a side of the rectangular plate in the longitudinal direction, and have the same shape. ,
The holder is a frame in which a hole is formed in a central portion, and a first groove and a second groove are formed on one surface of the holder at right angles to each other so as to pass through the hole, and the first groove is larger than the second groove. The first diaphragm piece and the second diaphragm piece are fitted into the first groove so as to be separated from each other to the maximum extent by the thickness of the diaphragm piece, and the third diaphragm piece and the fourth diaphragm piece are inserted in the second groove. They are fitted with the maximum distance from each other.

According to the fifth aspect, it becomes easy to assemble the first to fourth aperture pieces to the holder. In the charged particle beam exposure method of the second aspect of the invention, the charged particle beam is passed through the rectangular aperture of any one of the shaping apertures described above to shape the cross section of the charged particle beam into a rectangular shape. In the first aspect of the second aspect of the invention, the first to fourth aspects are set such that the surface roughness Δd of the edge forming the rectangular aperture satisfies the above equation Δd ≦ ε · M.
The position of the diaphragm piece in the longitudinal direction is adjusted, and after the adjustment, exposure is performed.

The shaping aperture of the third invention is of a construction used in any of the above charged particle beam exposure apparatuses.
In the method of manufacturing a molded squeeze of the fourth invention, the above-mentioned edge is finished by lapping to obtain a molded squeeze. According to the fourth aspect of the invention, it is possible to easily manufacture the molded diaphragm and obtain the inexpensive molded diaphragm.

[0020]

Embodiments of the present invention will be described below with reference to the drawings. [First Embodiment] FIGS. 2A to 2C are respectively shown in FIG.
FIG. 5 is a plan view, a front view, and a left side view of a forming diaphragm 30 used as the forming diaphragm 13 therein. FIG. 1A is a perspective view showing a main part of the forming diaphragm 30, and FIG. 1B is an enlarged front view of a part of the main part.

In FIG. 1A, the forming diaphragm 30 has diaphragm pieces 31 to 34 having the same shape. Aperture piece 31
˜34 are formed of heavy metals having a high melting point and relatively good machinability, for example, Mo having a melting point of 2620 ° C. The squeezing piece 31 is formed by chamfering a part of two adjacent surfaces of the strip-shaped rectangular plate by machining to form the slope 311 and the remaining edge 3.
12 are formed. The edge 312 is lapped so that the surface roughness is about 1 μm or less, which will be described later.

At one end and the other end of the diaphragm piece 31, elongated holes 313 and 314, into which fixing bolts are inserted, are formed. The longitudinal direction of the long holes 313 and 314 is the diaphragm piece 3.
1 corresponds to the longitudinal direction. Slots 313 and 314
Is for adjusting the position of the diaphragm piece 31 in the longitudinal direction so that the surface roughness of the edge 312 forming the rectangular aperture 30a is equal to or less than the upper limit value, and fixing the diaphragm piece 31 to the holder.

The slope 311 of the diaphragm piece 31, the edge 312,
Corresponding to the long holes 313 and 314, the slant surface 3 is formed on the diaphragm piece 32.
21, the edge 322, the long holes 323 and 324, the slanted surface 331, the edge 332, the long holes 333 and 33 on the diaphragm piece 33.
4 is a diaphragm piece 34 having an inclined surface 341, an edge 342, and an elongated hole 3.
43 and 344 are formed. Diaphragm pieces 31 and 32
The flat and wide sides of the diaphragms 33 and 34 are overlapped with each other, the edges 312 and 322 are opposed and parallel, and the edges 332 and 342 are perpendicular to the edges 312 and 322. There is. Edge 31
A rectangular aperture 30a is formed by 2, 322, 332, and 342.

In this state, the diaphragm pieces 31 to 34 are fixed to the ring-shaped holder 35 as shown in FIG. The holder 35 is preferably made of the same material as the diaphragm pieces 31 to 35 so that stress due to a difference in thermal expansion does not occur. A part of the outer periphery of the holder 35 is cut perpendicularly to the surface to form a reference surface 350, which is held by a chuck with this as a reference, and a circular hole 353 is formed on the surface of the holder 35 by a lathe at a right angle to the reference surface 350. A groove 351 is formed passing therethrough, and a groove 352 is formed passing a circular hole 353 in a direction perpendicular to the groove 351. The depth of the groove 351 is equal to the thickness of the diaphragm piece 31, and the depth of the groove 352 is twice the depth of the groove 351. As a result, in the state of FIG. 1A, the diaphragm pieces 33 and 34 can be fitted in the groove 352, and the diaphragm pieces 31 and 32 can be fitted in the groove 351.

Before fixing the diaphragm pieces 31 to 34 to the holder 35 with bolts, the edges 312, 322, 332 and 34 are formed.
The surface roughness Δd of 2 is measured by the measuring device, and the surface roughness Δd
The positions of the diaphragm pieces 31 to 34 in the longitudinal direction are determined so that the rectangular aperture 30a is formed in a portion equal to or less than the upper limit value described later. Then, the diaphragm pieces 31 to 3 are brought into this state.
4 is fixed to the holder 35. That is, the bolts 335 and 336 are inserted into the long holes 333 and 334, respectively, the side surface of the diaphragm piece 33 is brought into contact with and aligned with the side surface of the groove 352, and the bolt 335 is inserted into a screw hole (not shown) formed in the groove 352. And 336 are screwed together to fix the diaphragm piece 33 to the holder 35. The same applies to the diaphragm pieces 34, 31 and 32, and the bolts 345 and 346 and the bolt 3
Reference numerals 15 and 316 and bolts 325 and 326 correspond to the bolts 335 and 336 of the diaphragm piece 33, respectively. Even when the surface roughness Δd exceeds the upper limit value by use, it is possible to adjust the longitudinal positions of the diaphragm pieces 31 to 34 so that the rectangular aperture 30a is formed in a portion equal to or less than the upper limit value. Becomes longer.

Circular holes 354 to 357 are formed in the holder 35 between the groove 351 and the groove 352, and bolts are inserted into these holes and fixed in the charged particle beam exposure apparatus. In FIG. 1 (B), the thickness t of the diaphragm piece 31 may be a thickness sufficient for processing and mounting the diaphragm piece 31, and in the case of Mo, about 500 μm or more.
The slope angle of the slope 311 is such that the slope 311 has a rectangular aperture 3.
The angle may be such that it does not form a part of 0a, and 45 ° is preferable because it is easy to process. The width e of the edge 312 in the optical axis direction is a value within 10 to 100 μm described below,
For example, it is 15 μm. If the edge width e is smaller than the range, the electron beam passes through the edge of the rectangular aperture 13a and the sharpness of the transferred image is reduced, which is not preferable. The lower limit value of the edge width e differs depending on the material of the diaphragm pieces 31 to 34, and the lower limit value (about 10 μm in the case of Mo) and the range of the electron beam (in the case of Mo, the electron beam of 50 KV is 3. 9 μm), which is larger, and usually the former.

The upper limits of the surface roughness Δd and the edge width e of the edge 312 are determined as follows. In FIG. 4, the focusing half angle θ of the electron beam incident on the semiconductor wafer 11 is set to 5 mrad, and the rectangular aperture 13a (see FIG.
The projection reduction ratio (length reduction ratio) M of 30a in (A) onto the semiconductor wafer 11 is set to 100, and the allowable error ε of the pattern width transferred onto the semiconductor wafer 11 is 0.01 μ.
m.

In this case, the surface roughness Δd of the edge 312 is
Corresponds to Δd / M on the semiconductor wafer 11. Therefore, Δd / M ≦ ε holds, and Δd ≦ ε · M = 0.01 × 100 = 1 μm. In the case of Mo, this is possible by lapping. Further, the edge width 2e of the rectangular aperture 30a in the optical axis direction corresponds to the length 2e / M in the optical axis AX direction on the semiconductor wafer 11, and the electron beam is (2e / M). It means that it expands by tan θ. Therefore, (2e / M) · tan θ ≦ ε holds, and e ≦ εM / (2tan θ) = 0.01 × 100 / (2 × 0.005) = 100 μm. This is no problem because it is larger than the upper limit value of 10 μm for the above-mentioned machining.

For example, the holder 35 has a thickness of 5 mm, an outer diameter of 24 mm, an inner diameter of 14 mm, and the widths of the grooves 351 and 352 8.
2 ± 0.001 mm, groove 351 depth 1 mm, groove 352
The depth is 2 mm. The diaphragm piece 31 has a length of 22 m.
m, width 4 mm, thickness 1 mm, inclination angle 45 of slope 311
And edge width e = 15 μm. [Second Embodiment] As described above, the holder 35 is made of the same material as the diaphragm pieces 31 to 35, for example, Mo, but there is a temperature difference between the central portion of the diaphragm pieces 31 to 35 and the holder 35. , The force due to thermal expansion is relatively large,
34 with bolts 315, 316, 325, 326, 33
Even if it is fixed to the holder 35 by 5, 336, 345, and 346, the diaphragm pieces 31 to 35 with respect to the holder 35 are displaced when the number of times of use increases.

Therefore, in the forming squeeze according to the second embodiment of the present invention, as shown in FIGS.
After positioning 4 and fixing it to the holder 35 with the bolts, in this state, a hole penetrating the diaphragm pieces 31 to 34 and the holder 35 is formed in the portion of the diaphragm pieces 31 to 34 on the holder 35. By driving pins 361 to 368 which are slightly thicker than this hole, the positional deviation is prevented. The pins 361 to 368 are preferably made of the same material as the diaphragm pieces 31 to 35, for example, Mo.

The present invention includes various other modifications. For example, the forming stop 30 is the forming stop 12 of FIG.
Can also be used as In this case, when the reduction ratio of the image on the shaping aperture 13 of the rectangular aperture 12a is K, the upper limits of the surface roughness Δd and the edge width e are K times as described above. K is 2.5, for example. Also, the forming diaphragm 3
When 0 is used as the shaping aperture 12 in FIG. 4, the charged particle beam exposure apparatus may be configured to use electron beam cross-section shaping means such as a stencil mask or a blanking aperture array instead of the shaping aperture 13.

[Brief description of the drawings]

1A and 1B are respectively a perspective view of a main part of a forming diaphragm according to a first embodiment of the present invention and an enlarged front view of a part of the main part.

2A to 2C are a plan view, a front view, and a left side view of a forming diaphragm according to the first embodiment of the present invention, respectively.

3A to 3C are respectively a plan view, a front view and a left side view of a forming diaphragm according to a second embodiment of the present invention.

FIG. 4 is a schematic configuration diagram of a charged particle beam exposure apparatus.

FIG. 5 is an explanatory diagram of a variable rectangle of a cross section of an electron beam.

FIG. 6A is a diagram showing a part of a vertical cross section taken along the center line of a conventional shaping aperture, FIG. 6B is a diagram showing current passing characteristics of the shaping aperture, and FIG. It is a figure which shows a part of longitudinal cross section along the centerline of the other conventional shaping | molding drawing.

7A and 7B are plan views of components of another conventional forming diaphragm, and FIG. 7C is a plan view of a forming diaphragm in which these components are superposed.

[Explanation of symbols]

10 Electron Gun 11 Semiconductor Wafer 12, 13, 30 Forming Aperture 12a, 13a, 30a Rectangular Aperture 21-25 Electromagnetic Lens 31-34 Aperture Piece 311, 321, 331, 341 Slope 312, 322, 332, 342 Edge 313, 314, 323, 324, 333, 334, 3
43, 344 slot 35 holder 350 reference surface 351, 352 groove

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Kenji Kudo Kenji Kudo 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited (72) Koji Takahata 1015 Kamedotaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited

Claims (10)

[Claims] 1. A charged particle beam exposure apparatus in which a shaping diaphragm for shaping the cross section of a charged particle beam into a rectangular shape is arranged. In the shaping diaphragm, a part of two adjacent surfaces of a straight end of a plate is formed. It has chamfered first to fourth aperture pieces with an edge of width e left, and a holder to which the first to fourth aperture pieces are fixed, wherein the first and second aperture pieces are The third diaphragm piece and the fourth diaphragm piece are arranged parallel to each other with their edges opposed to each other, and the third diaphragm piece and the fourth diaphragm piece are arranged at right angles to the first diaphragm piece and the second diaphragm piece with their edges opposed to each other. A charged particle beam in which a diaphragm piece and the second diaphragm piece and the second diaphragm piece and the third diaphragm piece are overlapped with each other with their edges approaching each other and surrounded by the edges of the first to fourth diaphragm pieces. A charged particle beam exposure apparatus, characterized in that a forming rectangular aperture is formed. 2. The width e is e ≦ εM / (2 tan θ)
And is equal to or greater than the range of charged particles and equal to or greater than the lower limit value at which machining is possible, where: ε: tolerance of the width of the pattern exposed on the object to be exposed M: the rectangular aperture 2. The charged particle beam exposure apparatus according to claim 1, wherein the projection reduction ratio θ on the exposure object is a focusing half angle of the charged particle beam incident on the exposure object. 3. The surface roughness Δd of the edge is such that Δd ≦ ε · at a portion where the rectangular aperture is formed.
The charged particle beam exposure apparatus according to claim 2, wherein M is M. 4. Each of the first to fourth aperture pieces is provided with a hole passing through the first to fourth aperture pieces and the holder at both end portions and a portion on the holder, and a pin is provided in the hole. The charged particle beam exposure apparatus according to any one of claims 1 to 3, wherein the first to fourth diaphragm pieces are driven and fixed to the holder. 5. Each of the first to fourth aperture pieces has elongated holes at both ends thereof, and the longitudinal direction of the elongated holes is parallel to the edge of the aperture piece, and bolts are inserted into the elongated holes. 5. The charged particle beam exposure apparatus according to claim 1, wherein the diaphragm piece is fixed to the holder. 6. The first to fourth aperture pieces are formed by chamfering two adjacent surfaces of a rectangular plate with a side in the longitudinal direction of the rectangular plate, and have the same shape, and the holder has a central portion. Is a frame having a hole formed therein, and a first groove and a second groove are formed on one surface of the frame at right angles to each other passing through the hole, and the first groove is deeper than the second groove by the thickness of the diaphragm piece. , The first diaphragm piece and the second diaphragm piece are fitted in the first groove so as to be spaced apart from each other to the maximum extent, and the third diaphragm piece and the fourth diaphragm piece are spaced apart from each other to the maximum extent in the second groove. The charged particle beam exposure apparatus according to any one of claims 1 to 5, wherein the charged particle beam exposure apparatus is inserted. 7. The charged particle beam exposure method according to claim 1, wherein the charged particle beam is passed through the rectangular aperture of the shaping diaphragm according to claim 1, and the cross section of the charged particle beam is shaped into a rectangle. And a charged particle beam exposure method. 8. The longitudinal positions of the first to fourth aperture pieces are adjusted so that the surface roughness Δd of the edge forming the rectangular aperture satisfies the above expression Δd ≦ ε · M, and after adjustment, The charged particle beam exposure method according to claim 7, wherein exposure is performed. 9. The formed squeeze according to any one of claims 1 to 6. 10. A method of manufacturing a molded squeeze, wherein the edge is finished by lapping to obtain the molded squeeze according to claim 3.