JPS61133388A - Dry etching device - Google Patents

Dry etching device

Info

Publication number
JPS61133388A
JPS61133388A JP25359184A JP25359184A JPS61133388A JP S61133388 A JPS61133388 A JP S61133388A JP 25359184 A JP25359184 A JP 25359184A JP 25359184 A JP25359184 A JP 25359184A JP S61133388 A JPS61133388 A JP S61133388A
Authority
JP
Japan
Prior art keywords
treated
chamber
etching
conveyor
dry etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25359184A
Other languages
Japanese (ja)
Inventor
Hidetaka Jo
城 英孝
Shigeki Hazamano
硲野 重喜
Masahiro Shibagaki
柴垣 正弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokuda Seisakusho Co Ltd
Original Assignee
Toshiba Corp
Tokuda Seisakusho Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokuda Seisakusho Co Ltd filed Critical Toshiba Corp
Priority to JP25359184A priority Critical patent/JPS61133388A/en
Priority to US06/802,468 priority patent/US4693777A/en
Priority to DE3587830T priority patent/DE3587830T2/en
Priority to EP85115144A priority patent/EP0187249B1/en
Publication of JPS61133388A publication Critical patent/JPS61133388A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent effectively the corrosion of a material to be treated owing to the reaction with the atm. air in a dry etching device by connecting integrally a post treatment chamber to the rear stage side of an etching chamber so that the post treatment can be executed right after the end of the etching. CONSTITUTION:The material to be treated is lifted by the rise of a pusher pin 7 and a conveyor 9 is positioned below the material to be treated via a gate valve 18c when the treatment of the material to be treated ends in the etching chamber 2. The pin 7 is lowered to place the material to be treated on the conveyor 9 and said material is conveyed to an unloading chamber 3. The material to be treated is then fed above a pusher pin 10 and the material to be treated is lifted by the pin 10 and is placed on a belt conveyor 11, by which the material is conveyed to a heat treatment chamber 5. A hot plate 13 is raised to carry the material to be treated when the material to be treated is positioned below a nozzle 14, then the air heated by a heater 17 is blown from the nozzle 14 toward the material to be treated by which the material to be treated is dried. The material is then fixed to a chuck 22 for rinsing and is subjected to rinsing; thereafter the material is conveyed to an outlet side cassette 29.

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明はドライエツチング装置に係り、特にエツチング
処理後の後処理工程を連続して行なうことを可能とした
ドライエツチング装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a dry etching apparatus, and more particularly to a dry etching apparatus capable of continuously performing a post-processing process after an etching process.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

通常、被処理物における基板上のA1層をエツチングす
る場合、5iCjl  、CCl2、BCj  、Cj
□等の塩素系ガスをエツチングがスとして使用し、これ
らエツチングガスとAjとの化学反応によりエツチング
が行なわれるものである。また、被処理物を1枚ずつ処
理する枚葉式のエツチング装置では、塩素系ガスが大気
中の水分と反応して生成される塩酸により腐蝕されるこ
とを防止するため、エツチング室は常に真空に保たれて
いる。
Usually, when etching the A1 layer on the substrate of the workpiece, 5iCjl, CCl2, BCj, Cj
A chlorine-based gas such as □ is used as an etching gas, and etching is performed by a chemical reaction between the etching gas and Aj. In addition, in single-wafer etching equipment that processes objects one by one, the etching chamber is always kept under vacuum to prevent corrosion caused by the hydrochloric acid produced when chlorine-based gas reacts with moisture in the atmosphere. is maintained.

さらに、エツチング処理後の被処理物についても同様に
、大気に触れた場合にIIHaが発生してしまうため、
熱処理あるいは水洗等の後処理を行ない、塩素系のさん
さを除去するようになされている。
Furthermore, since IIHa is generated when the object is exposed to the atmosphere after etching,
Post-treatment such as heat treatment or water washing is performed to remove chlorine-based particles.

しかし、従来は、エツチング装置と後処理製質とを別個
に設けていたので、装置の専有面積が多く必要であると
いう問題があり、しかも、エツチング終了後、後処理を
行なうまでの時間が装置問の搬送等により長く必要であ
るため、被処理物に腐蝕が生じやすくなってしまうとい
う問題があった。
However, in the past, the etching equipment and the post-processing equipment were installed separately, which resulted in the problem that the equipment required a large amount of space.Furthermore, it took a long time to perform the post-processing after the etching process was completed. Since it takes a long time to transport the object, there is a problem in that the object to be treated is more likely to be corroded.

〔発明の目的〕[Purpose of the invention]

本発明は上記した点に鑑みてなされたもので、被処理物
の後処理を迅速に行なうことができ、かつ、スペース効
率の高いドライエツチング装置を提供することを目的と
するものである。
The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide a dry etching apparatus that can quickly perform post-processing of a workpiece and is highly space efficient.

(発明の概要〕 上記目的を達成するため本発明に係るドライエツチング
装置は、エツチング室内に一対の電極を対向して配置し
、上記エツチング室内にエツチングガスを導入しつつ上
記電極に高周波電力を印加することにより被処理物のエ
ツチングを行なうドライエツチング装置において、上記
エツチング室の後段側に後処理室を一体に連結したこと
をその特徴とするものである。
(Summary of the Invention) In order to achieve the above object, a dry etching apparatus according to the present invention includes a pair of electrodes disposed facing each other in an etching chamber, and high frequency power is applied to the electrodes while introducing an etching gas into the etching chamber. This dry etching apparatus is characterized in that a post-processing chamber is integrally connected to the downstream side of the etching chamber.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の実施例を図面を参照して説明する。 Embodiments of the present invention will be described below with reference to the drawings.

図面は本発明に係るドライエツチング装置を示したもの
で、ローディング室1、エツチング室2、アンローディ
ング至3、バッファ室4および後処理室としての熱処理
室5が連続して設けられ、上記エツチング室2の内部下
方には、電極6が設けられている。この電極6の下方に
は、上記電極6を貫通して上下動するブツシャピン7が
配設されており、ローディング室1およびアンローディ
ング室3の内部には、2対のアームをパンタグラフ状に
連結するとともに先端部に載置板を有し、このアームの
回動により被処理物を直線的に搬送する搬送装置8.9
が配設されている。
The drawing shows a dry etching apparatus according to the present invention, in which a loading chamber 1, an etching chamber 2, an unloading chamber 3, a buffer chamber 4, and a heat treatment chamber 5 as a post-treatment chamber are successively provided. An electrode 6 is provided inside and below 2. A button pin 7 is provided below the electrode 6 and moves up and down through the electrode 6. Inside the loading chamber 1 and unloading chamber 3, two pairs of arms are connected in a pantograph shape. and a conveying device 8.9 which has a mounting plate at its tip and linearly conveys the object to be processed by rotating this arm.
is installed.

さらに、バッファ至4の内部には、ブツシャピンを有す
るベルトコンベア11が配設されており、熱処理室5の
内部には、ベルトコンベア12が設けられるとともに、
このベルトコンベア12の下方には、上下動自在で上方
位置において上面が上記ベルトコンベア12の上面より
高くなるホット   、1プレート13が配設されてい
る。しがも、上記ベルトコンベア12の上方には、2つ
のノズル14゜14を有するドライヤ15が配置され、
上記ホットプレート13およびドライヤ15の内部には
それぞれヒータ16.17が内蔵されている。
Further, a belt conveyor 11 having a push pin is provided inside the buffer 4, and a belt conveyor 12 is provided inside the heat treatment chamber 5.
A hot plate 13 is disposed below the belt conveyor 12 and is vertically movable and whose upper surface is higher than the upper surface of the belt conveyor 12 in the upper position. However, above the belt conveyor 12, a dryer 15 having two nozzles 14°14 is arranged.
Heaters 16 and 17 are built inside the hot plate 13 and the dryer 15, respectively.

また、上記熱処理室5を除く各室1.2.3の囚および
ローディング室1と外部との間には、それぞれゲート弁
18a、18b、18c、18dが開閉自在に設けられ
、O−ディング室1、エツチング室2およびアンローデ
ィング至3には、それぞれパルプ19.19.19を介
して図示しない真空ポンプに接続される排気管20.2
1が接続されている。
In addition, gate valves 18a, 18b, 18c, and 18d are provided in each of the chambers 1.2.3 except for the heat treatment chamber 5 and between the loading chamber 1 and the outside so as to be openable and closable. 1. The etching chamber 2 and the unloading chamber 3 have exhaust pipes 20.2 connected to a vacuum pump (not shown) via pulp 19, 19, 19, respectively.
1 is connected.

ざらに、熱処理v5の後段側には、上下動かつ回転自在
に設けられた水洗用チャック22を有するベルトコンベ
ア23が配設されており、ローディング室1の入口側に
は上下動自在な入口側カセット24、搬送ベルト25お
よび上下動自在なセンタ26を有するベルトコンベア2
7が設けられるとともに、水洗用チVツク22の後段側
には搬送ベルト28および出口側カセット29が設けら
れている。
Roughly speaking, a belt conveyor 23 having a water washing chuck 22 which is vertically movable and freely rotatable is disposed on the downstream side of the heat treatment v5, and a vertically movable inlet chuck 22 is provided on the entrance side of the loading chamber 1. Belt conveyor 2 having a cassette 24, a conveyor belt 25 and a vertically movable center 26
7 is provided, and a conveyor belt 28 and an outlet side cassette 29 are provided on the downstream side of the water washing chuck 22.

次に、本実施例の作用について説明する。Next, the operation of this embodiment will be explained.

まず、入口側カセット24を下降させて被処理物Aを搬
送ベルト25の上面に載せ、搬送ベルト25の駆動によ
り被処理物へをセンタ26の上方に移動させる。そして
、センタ26の端部に位置決めされ、センタ26を上昇
さけて被処理物Aを持ち上げ、ゲート弁18aを開き、
搬送装置8゛を駆動させて被処理物Aの下方に載置板を
位置させる。その後、ブツシャピン25aを下降させて
被処理物へを載置板15上に載置し、被処理物AをO−
ディング室1に搬送する。
First, the entrance side cassette 24 is lowered to place the workpiece A on the upper surface of the conveyor belt 25, and the workpiece is moved above the center 26 by driving the conveyor belt 25. Then, it is positioned at the end of the center 26, lifts the workpiece A while avoiding the center 26, and opens the gate valve 18a.
The conveying device 8' is driven to position the mounting plate below the object to be processed A. Thereafter, the button pin 25a is lowered to place the object to be processed on the mounting plate 15, and the object to be processed A is placed on the O-
Transfer to the loading room 1.

次に、ゲート弁18aを閉じ排気管21によりa−ディ
ング室1の真空排気を行なった後、エツチング室2側の
ゲート弁18bを開き、被処理物Aをエツチング室2に
送り、ブツシャピン7の上昇により被処理物Aを載置板
上方に持ち上げる。
Next, after closing the gate valve 18a and evacuating the ading chamber 1 through the exhaust pipe 21, the gate valve 18b on the etching chamber 2 side is opened to send the object A to the etching chamber 2, and the button pin 7 is By rising, the object A to be processed is lifted above the mounting plate.

そして、搬送装置8はローディング室1に戻る一方プツ
シャビン7を下降させて電極6上面に被処理物Aを載置
する。この状態で被処理物Aのエツチングを行ない、処
理終了後再びブッシャビン7を上昇させ【被処理物Aを
持ち−ヒげる。そして、アンローディング室3側のゲー
ト弁18cを開き、搬送装置9の載置板を被処理物への
下方に位置させた後、ブツシャビン7を下降させて搬送
装置9の載置板Fに被処理物Aを載置する。そして、被
処理物Aをアンローディング室3’c搬送した後、ゲー
ト弁18cを閉じバッファ室4側のゲート弁18dを開
き、ブツシャビン10の上方へ送り、上記エツチング室
2の場合と同様に、ブツシャビン10の上昇により被処
理物Aを持ち上げ搬送装置9がアンローディグ室3に戻
った侵にブツシャビン10を下降させて被処理物Aをベ
ルトコンベア11上に4!置する。そして、ベルトコン
ベア11の駆動により被処理物Aを熱処理室5に搬送し
、被処理物Aがノズル14下方に位置したときにヒータ
16により加熱されたホットプレート13をベルトコン
ベア12より上昇させ被処理物へをホットプレート13
上面に1!置する。このとき、ノズル14からヒータ1
7により加熱された空気を被処理物へに吹き付は乾燥さ
せた後、ホットプレート13を下降させ被処理物Aをベ
ルトコンベア12により熱処1!P 室5から送り出し
水洗用チャック22の上方まで搬送する。そして、水洗
用チャック22を上昇させ被処理物Aの裏面に真空チャ
ックにより固着し、図示しない水洗用ノズルから純水を
吹き付けながら被処理物を回転さゼ均一な水洗を行なう
ようになされる。水洗終了後、上記ノズルから空気を吹
き付けながら被処理物Aを高速回転させて乾燥させ、乾
燥後、水洗用チャック22を下降させるとともに真空チ
ャックを解除し、被処理物Aをベルトコンベア23上に
載せ、搬送ベルト28を介して出口側カセット29に送
る。
Then, the transport device 8 returns to the loading chamber 1 while lowering the pusher bin 7 to place the object A on the upper surface of the electrode 6. In this state, the object to be processed A is etched, and after the processing is finished, the bushing bin 7 is raised again and the object to be processed A is lifted up. Then, after opening the gate valve 18c on the unloading chamber 3 side and positioning the mounting plate of the conveyance device 9 below the workpiece, the bushing bin 7 is lowered and placed on the mounting plate F of the conveyance device 9. Place the processed material A. After the workpiece A is transported to the unloading chamber 3'c, the gate valve 18c is closed, the gate valve 18d on the buffer chamber 4 side is opened, and the workpiece A is sent above the bushing bin 10, and as in the case of the etching chamber 2, As the shovel bin 10 rises, the workpiece A is lifted up and the transport device 9 returns to the unloading chamber 3. Then the shovel bin 10 is lowered and the workpiece A is placed on the belt conveyor 11. place Then, the belt conveyor 11 is driven to transport the workpiece A to the heat treatment chamber 5, and when the workpiece A is located below the nozzle 14, the hot plate 13 heated by the heater 16 is raised from the belt conveyor 12 to be heated. Hot plate 13 for processing material
1 on the top! place At this time, from the nozzle 14 to the heater 1
After drying the object to be treated by blowing the air heated by 7 onto it, the hot plate 13 is lowered and the object to be treated A is transferred to the belt conveyor 12 for heat treatment 1! It is transported from the P chamber 5 to above the chuck 22 for washing with water. Then, the washing chuck 22 is raised and fixed to the back surface of the object A by a vacuum chuck, and the object is rotated while spraying pure water from a washing nozzle (not shown) to uniformly wash the object. After washing with water, the workpiece A is dried by rotating at high speed while blowing air from the nozzle. After drying, the water washing chuck 22 is lowered and the vacuum chuck is released, and the workpiece A is placed on the belt conveyor 23. It is loaded and sent to the outlet side cassette 29 via the conveyor belt 28.

したがって、本実施例においては、エツチング終了後、
ただちに被処理物の後処理を行なうことができ、被処理
物の腐食を有効に防止することができる。また、本実7
mW4においては各室を直線的に連結したが、例えばU
字状に各室を連結するようにすれば、極めてコンパクト
に形成することができ、装置の小型化、スペース効率の
向上を図ることができる。
Therefore, in this example, after the etching is completed,
The object to be treated can be post-treated immediately, and corrosion of the object to be treated can be effectively prevented. Also, Honji 7
In mW4, each chamber was connected linearly, but for example, U
By connecting the chambers in a letter-like shape, the device can be formed extremely compactly, making it possible to downsize the device and improve space efficiency.

〔発明の効果〕〔Effect of the invention〕

以上述べたように本発明に係るドライエツチング装置は
、エツチング室の後段側に後処理室を一体に連結するよ
うに構成したので、エツチング終了後ただちに被処理物
の後処理を行なうことができ、したがって、大気との反
応による腐食を有効に防ぐことができる。また、別個に
後処理装置を設ける必要がないので、スペース効率を大
幅に取善することができ、かつ、生産効率の向上を因る
ことができる等の効果を奏する。
As described above, the dry etching apparatus according to the present invention is configured such that the post-processing chamber is integrally connected to the downstream side of the etching chamber, so that the workpiece can be post-processed immediately after etching is completed. Therefore, corrosion due to reaction with the atmosphere can be effectively prevented. Further, since there is no need to provide a separate post-processing device, space efficiency can be greatly improved, and production efficiency can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

図面は本発明の一実施例を示す概略椛成図である。 1・・・ローディング空、2・・・エツチング室、3・
・・アンローディング室、4・・・バッファ室、5・・
・熱処]I!室、6・・・電極、7,10・・・ブツシ
ャビン、8.9・・・搬送装置、11,12.23.2
7・・・ベルトコンベア、13・・・ホットプレート、
14・・・ノズル、15・・・ドライヤ、16.17・
・・じ−タ、18・・・ゲート弁、19・・・バルブ、
20゜21・・・排気管、22・・・水洗用チャック、
24゜29・・・カセット、25.28川搬送ベルト、
26・・・セック。
The drawings are schematic diagrams showing one embodiment of the present invention. 1... Loading sky, 2... Etching chamber, 3...
...Unloading room, 4...Buffer room, 5...
・Heat treatment] I! Chamber, 6... Electrode, 7, 10... Butsushabin, 8.9... Transport device, 11, 12.23.2
7... Belt conveyor, 13... Hot plate,
14... Nozzle, 15... Dryer, 16.17.
...Jeater, 18...Gate valve, 19...Valve,
20゜21...Exhaust pipe, 22...Water washing chuck,
24゜29...cassette, 25.28 river conveyor belt,
26...sec.

Claims (1)

【特許請求の範囲】[Claims] エッチング室内に一対の電極を対向して配置し、上記エ
ッチング室内にエッチングガスを導入しつつ上記電極に
高周波電力を印加することにより被処理物のエッチング
を行なうドライエッチング装置において、上記エッチン
グ室の後段側に後処理室を一体に連結したことを特徴と
するドライエッチング装置。
In a dry etching apparatus in which a pair of electrodes are disposed facing each other in an etching chamber, and a workpiece is etched by applying high frequency power to the electrodes while introducing an etching gas into the etching chamber, the dry etching apparatus is used in a downstream stage of the etching chamber. A dry etching device characterized by a post-processing chamber integrally connected to the side.
JP25359184A 1984-11-30 1984-11-30 Dry etching device Pending JPS61133388A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP25359184A JPS61133388A (en) 1984-11-30 1984-11-30 Dry etching device
US06/802,468 US4693777A (en) 1984-11-30 1985-11-27 Apparatus for producing semiconductor devices
DE3587830T DE3587830T2 (en) 1984-11-30 1985-11-29 Apparatus for manufacturing semiconductor devices.
EP85115144A EP0187249B1 (en) 1984-11-30 1985-11-29 Apparatus for producing semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25359184A JPS61133388A (en) 1984-11-30 1984-11-30 Dry etching device

Publications (1)

Publication Number Publication Date
JPS61133388A true JPS61133388A (en) 1986-06-20

Family

ID=17253499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25359184A Pending JPS61133388A (en) 1984-11-30 1984-11-30 Dry etching device

Country Status (1)

Country Link
JP (1) JPS61133388A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH028369A (en) * 1988-01-29 1990-01-11 Anelva Corp Vacuum treatment equipment
US5007981A (en) * 1989-02-27 1991-04-16 Hitachi, Ltd. Method of removing residual corrosive compounds by plasma etching followed by washing
US7997003B2 (en) * 2005-04-13 2011-08-16 Lindauer Dornier Gesellschaft Mbh Multistage continuous dryer, especially for plate-shaped products

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55141570A (en) * 1979-04-18 1980-11-05 Anelva Corp Dry etching apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55141570A (en) * 1979-04-18 1980-11-05 Anelva Corp Dry etching apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH028369A (en) * 1988-01-29 1990-01-11 Anelva Corp Vacuum treatment equipment
US5007981A (en) * 1989-02-27 1991-04-16 Hitachi, Ltd. Method of removing residual corrosive compounds by plasma etching followed by washing
US7997003B2 (en) * 2005-04-13 2011-08-16 Lindauer Dornier Gesellschaft Mbh Multistage continuous dryer, especially for plate-shaped products

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