JPH028369A - Vacuum treatment equipment - Google Patents

Abstract

PURPOSE:To inhibit the generation of dust at the surface to be treated of a substrate and also to improve productivity by providing cassettes in which vertically set plural substrates are placed to the insides of plural spare vacuum chambers and successively conveying these cassettes to vacuum treatment chambers. CONSTITUTION:Cassettes 4a, 4b in which substrates 3 are set are set in spare vaccum chambers 6a, 6b so that substrate surfaces to be treated are made vertical. First, the cassette 4a is conveyed by means of a conveyance mechanism 7 into a vacuum conveyance chamber 5, and then, the substrate 3 is lifted up, held by means of a conveyance chuck 9, turned so that the surface to be treated of the substrate 3 is turned downward, and conveyed to a relay position 8. Subsequently, the substrate 3 is conveyed to vacuum chambers 1a-1c in succession by means of a robot arm 10 to undergo respectively prescribed vacuum treatments and is then returned via the relay position 8 into the cassette 4. When the treatments of all the substrates 3 are finished as mentioned above and the cassette 4a is moved to the spare vacuum chamber 6a, the cassette 4b is transferred into the vacuum conveyance chamber 5 and subjected to the repetition of the same treatments as mentioned above. By this method, the generation of dust at the substrate 3 surface to be treated can be inhibited, and productivity in the vacuum treatment can be improved.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a vacuum processing apparatus for performing surface treatment of a substrate in vacuum.

(Prior Art) As this type of vacuum processing apparatus, an apparatus using plasma is well known, and in particular, a dry etching apparatus using reactive gas plasma is widely used in the semiconductor device manufacturing process. In particular, a multi-chamber dry etching apparatus having a plurality of processing chambers is beginning to be used as a dry etching apparatus for aluminum alloys, since each processing chamber can perform etching using a different reactive gas.

As representative examples of these multi-chamber dry etching devices, the devices shown in FIGS. 4 and 5 are known.

The apparatus shown in FIG. 4 includes a power cellar for carrying in substrates 4a, three processing chambers 1a, lb, and lc, and a power cellar for carrying out substrates) 4.
b are arranged in series and are separated from each other by valves 2a, 2b, 2c, and 2d.

In the above configuration, the substrate carrying cassette 4a in which the substrates 3 are set is placed in the atmosphere, and the valve 2a is opened and closed to transfer the substrates one by one to the processing chamber 1a. After performing a predetermined vacuum process in the processing chamber la, the substrate 3 is sequentially transferred to the process chambers 1b and 1c through each valve while performing a predetermined vacuum process, and after completing these vacuum processes,
The processed substrate 3 is stored and carried out in a cassette 4b for carrying out the substrate.

Next, the apparatus shown in FIG. 5 has three processing chambers 1a, 1b,
1c and a vacuum preliminary chamber 6 which accommodates a cassette 4 for carrying in and carrying out substrates is arranged radially so as to surround the vacuum transfer chamber 5. Valves 2a, 2b, 2c, and 2d are interposed so that each of the processing chambers 1a to 1c, the vacuum preliminary chamber 6, and the vacuum transfer chamber 5 can be made airtight with respect to each other. The vacuum preliminary chamber 6 can be independently exposed to the atmosphere without opening the vacuum transfer chamber 5 and the processing chambers 1a to 1c to the atmosphere using the valve 2a.

In the above-mentioned configuration, the valve 2e, which is the loading/unloading port for the cassette 4 in the vacuum preliminary chamber 6, is opened, and after the cassette 4 loaded with the substrate 3 is placed in the vacuum preliminary chamber 6, the valve 2e is closed, and the vacuum The preliminary chamber 6 is evacuated. Next, the valve 2a is opened, and the substrate is transferred to any processing chamber 1a or 1b or IC by the transfer mechanism (not shown) in the vacuum transfer chamber 5, and the arbitrary processing chamber valve 2b to which the substrate 3 was transferred is Alternatively, close 2C or 2d and perform a predetermined vacuum treatment.

Then, after the vacuum processing is completed, it passes through the vacuum transfer chamber 5 again,
After the substrate is transferred to another processing chamber, vacuum processing is performed.

After performing such an operation one or more times depending on the desired vacuum processing, the substrate 3 is again stored in the substrate loading/unloading cassette 4, thereby terminating the vacuum processing. After the vacuum processing of all the substrates is completed, the valve 2a is closed, the vacuum preliminary chamber 6 is exposed to the atmosphere, and the cassette 4 is taken out.

(Problems to be Solved by the Invention) However, in the apparatus shown in FIG.
Since the interior of the chamber is exposed to the atmosphere every time the substrate 3 is transported, residual gas such as moisture in the atmosphere is adsorbed to the wall surface of the processing chamber, making it difficult to perform vacuum processing with good reproducibility. Furthermore, since the processing chambers are directly connected, residual components of the gas used in each processing chamber tend to flow into adjacent processing chambers, which may deteriorate processing characteristics. Furthermore, the substrates after processing are stored in the atmosphere, and the vacuum-treated substrates are exposed to the atmosphere until the processing of all the substrates loaded in the cassette 4 is completed. In some cases, a large amount of corrosion occurred.

Next, in the apparatus shown in FIG. 5, the substrate is stored in a vacuum, and only the preliminary vacuum chamber needs to be opened to the atmosphere when replacing the cassette, so there is less contamination due to residual gas after processing, and there is less contamination during aluminum alloy etching. There is also less occurrence of corrosion.

However, since there is only one vacuum preparatory chamber, the vacuum processing cannot be performed while the cassettes are being replaced after all the substrates set in the cassettes have been vacuum processed, resulting in a significant drop in productivity. In particular, a large amount of minute dust generated on the substrate, which is important in microfabrication, is generated when the vacuum preliminary chamber is exposed to the atmosphere or evacuated to a vacuum. In order to reduce this dust, it is necessary to make the time for evacuation to a vacuum and the time for the atmosphere to be sufficiently long, but this process is
If the apparatus shown in the figure is used, productivity will drop significantly.

Furthermore, in both of the above devices, since the processing surface of the substrate 3 faces upward, a large amount of dust was generated on the substrate surface during transportation and vacuum processing, which did not meet the requirements of microfabrication. .

(Object of the present invention) The present invention was made to solve the above-mentioned problems, and its purpose is to suppress the generation of dust on the processing surface of a substrate and to improve the productivity of vacuum processing. The object of the present invention is to provide an apparatus capable of performing vacuum processing with good reproducibility without causing after-corrosion.

(Means for Solving the Problems) In order to achieve the above object, the present invention is configured as follows. That is, as a first means, a preliminary vacuum chamber that can be made airtight with a valve, a vacuum transfer chamber,
A plurality of processing chambers are provided, and the substrate in the preliminary vacuum chamber is transferred to an arbitrary processing chamber via the vacuum transfer chamber, and after the substrate is vacuum-processed in the processing chamber, the substrate is transferred via the vacuum transfer chamber again. After the substrate is transferred to another arbitrary processing chamber and subjected to vacuum processing in the processing chamber, the substrate is returned to the preliminary vacuum chamber via the vacuum transfer chamber again, and in the vacuum processing apparatus for vacuum processing, each substrate is independently exposed to the atmosphere,
At least two preliminary vacuum chambers equipped with a mechanism for evacuation
Each preliminary vacuum chamber is equipped with a cassette containing a plurality of vertically installed substrates, and a transfer mechanism is provided for reciprocating the substrates in vacuum between the preliminary vacuum chamber and the vacuum transfer chamber. The method further includes a transfer mechanism that sequentially transfers substrates transferred to the vacuum transfer chamber from the cassette to the vacuum processing chamber, and transfers processed substrates that have been vacuum-processed in the vacuum processing chamber to the cassette. It is said that

Furthermore, as a second means, a preliminary vacuum chamber that can be made airtight with a valve, a vacuum transfer chamber, and a plurality of processing chambers are provided, and the substrate in the preliminary vacuum chamber is transferred through the vacuum transfer chamber to any desired processing. After the substrate is vacuum-processed in the processing chamber, it is transported again to any other processing chamber via the vacuum transfer chamber, and the substrate is vacuum-processed in the processing chamber, and then the substrate is vacuum-processed in the processing chamber. In a vacuum processing apparatus that performs vacuum processing by returning to a pre-vacuum chamber via a vacuum transfer chamber, at least two pre-vacuum chambers each equipped with a mechanism that can be independently opened to atmosphere and evacuated are provided, and each pre-vacuum chamber has a , equipped with a cassette containing a plurality of vertically installed substrates, a transfer mechanism for reciprocating the substrates between a preliminary vacuum chamber and a vacuum transfer chamber in a vacuum, and a transfer mechanism for transferring the substrates back and forth between a preliminary vacuum chamber and a vacuum transfer chamber; A transfer mechanism is provided to sequentially transport the substrates from the cassette to the vacuum processing chamber and to deliver the processed substrates that have been vacuum-processed in the vacuum processing chamber to the cassette, and the substrates stored in the cassette are placed on the atmospheric side of the vacuum preliminary chamber. The apparatus is characterized by being equipped with at least one heating furnace capable of heating the liquid to 100° C. or higher, and a mechanism for taking out the cassette from the vacuum preliminary chamber and moving the cassette to the heating furnace.

1l- = 12- (Function) In the present invention having the above configuration, during vacuum processing of a substrate, the operation of loading and unloading and transporting the substrate between the preliminary vacuum chamber, the vacuum transfer chamber, and the processing chamber is performed as follows.

The entire system includes two preliminary vacuum chambers, a vacuum transfer chamber, and a processing chamber.
Evacuate each chamber to vacuum with the valves that isolate each chamber open.

Next, a valve isolating one of the preliminary vacuum chambers and the vacuum transfer chamber is closed, and N2, air, etc. are introduced into the preliminary vacuum chamber, and the chamber is opened to the atmosphere. Then, the lid of the pre-vacuum chamber is opened, and the cassette containing the substrate vertically is placed inside the pre-vacuum chamber. Next, the lid of the preliminary vacuum chamber is closed, the vacuum is evacuated, the valve is opened, and the cassette is transferred to the vacuum transfer chamber in a vacuum, using the transfer chuck that is the first transfer mechanism and the robot arm that is the second transfer mechanism. The substrates in the cassette are transported one by one onto a substrate holding ring provided around the electrodes in the vacuum processing chamber with the processing surface facing downward, and the substrates are placed on the substrate holding ring.

Next, the substrate holding ring is brought into close contact with the electrode, the electrode is lowered, the processing chamber is isolated from the vacuum transfer chamber, the reactive gas is flowed into the processing chamber, and the vacuum is evacuated while being evacuated by another exhaust system installed in the processing chamber. Perform processing.

After the vacuum processing is completed, the electrode is raised again to make the processing chamber the same vacuum as the vacuum transfer chamber, and at the same time the substrate is transferred to another processing chamber, another substrate is taken out from the cassette and transferred to the processing chamber where the substrate was previously processed. Transport to.

The above operation is repeated once or several times, and after the vacuum processing is completed, the processed substrate is collected vertically into a cassette via a robot arm and a transfer chuck, and the vacuum processing is completed.

During the above vacuum processing, the valve that isolates the other preliminary vacuum chamber and the vacuum transfer chamber is closed, the other preliminary vacuum chamber is opened to the atmosphere, and the other cassette with the substrate set is transferred to the preliminary vacuum chamber. and evacuate it to a vacuum. When the vacuum processing of the substrate in the cassette containing the substrate being previously vacuum processed is completed, the cassette is immediately replaced, and the vacuum processing of the substrate in the other cassette is started. At the same time, the cassette containing the substrates that have been vacuum-processed is transferred to the preliminary vacuum chamber, separated from the vacuum transfer chamber by a valve, the preliminary vacuum chamber is opened to the atmosphere, and the processed substrates are taken out. As mentioned above, the operation of opening the preliminary vacuum chamber to the atmosphere and replacing the cassette can be performed while performing vacuum processing.
Not only can a significant increase in productivity be expected, but the introduction and exhaust of N2, air, etc. can be carried out for a long time, making it possible to realize vacuum processing that suppresses the generation of dust.

Further, since the cassette containing the processed substrates is placed in a heating furnace and heated at a predetermined temperature for a predetermined period of time, after-corrosion can be almost completely suppressed.

(Example) Hereinafter, an example of the present invention will be described based on the drawings. Note that the same reference numerals will be used to describe the same constituent members as in the prior art.

FIG. 1 shows a plan view of a first embodiment of the invention.

According to this, the three processing chambers 1a, lb, and 1c are arranged at the lower part of the vacuum transfer chamber 5, and the vacuum transfer chamber 5 includes a vacuum chamber 1i which can be isolated by a valve 2a and a vacuum chamber 1i which can be isolated by a valve 2b. A vacuum preliminary chamber 6b is attached. Also, inside the vacuum transfer chamber 5, there is a cassette 4a.
and a transport mechanism 7 for transporting the cassettes 4a and 4b, and the cassettes 4a and 4b.
Chuck the board 3 set vertically on b, and
° Rotate and hold the board 3 horizontally so that the board 3 faces downward, then rotate the board 3 horizontally about the axis 9' as a fulcrum, and then rotate the board 3 horizontally.
A rotatable robot equipped with a transport chuck 9 for transporting the substrate to the relay position 8, and two chuck parts 10a' and 10b for further transporting the substrate transported to the relay position 8 to the processing chambers 1a to IC. An arm 10 is installed.

Note that the number of chuck parts can be increased or decreased depending on the number of processing chambers, processing speed, etc., and is not necessarily limited to two as described above.

Next, operations between the above-mentioned constituent members will be explained.

With the valves 2a and 2b open and the valves 2c and 2d closed, a vacuum pump (not shown) provided in the vacuum transfer chamber 5 (e.g. cryopump, turbomolecular pump, etc.) is used to pump the vacuum transfer chamber 5 and the vacuum reserve. The chambers 6a, 6b and the processing chamber 5 are 10
Evacuate to a high vacuum of -5 Torr or less.

Next, the valve 2a is closed, N2, air, etc. are introduced into the vacuum preliminary chamber 6a to bring it to atmospheric pressure, the valve 2C is opened, and the substrate 3 is sealed! - Set the closed cassette 4a in the vacuum preparatory chamber 6a so that the processing surface of the substrate 3 is vertical. Then, the valve 2C is closed, and after the vacuum preliminary chamber 6a is evacuated, the valve 2a is opened. In this state, cassette 4
a is transported into the vacuum transport chamber 5 by the cassette transport mechanism 7.

Next, the substrate 3 is lifted onto the cassette 4a by a substrate lift (not shown), and the transport chuck 9 chucks the substrate 3 in this state. Next, the transport chuck 9 holding the substrate 3 rotates the substrate 90 degrees so that the processing surface of the substrate faces downward. In this state, the transport chuck 9 is rotated with the shaft g 9
) as a fulcrum to transport the board 3 to the relay position 8,
Release the chucking and place the board on the relay position 8.

Then, the transport chuck 9 rotates again about the axis 9' and returns to the upper position of the cassette 4a.

Then, it rotates 906 times relative to the cassette 4a, and is ready to chuck the next substrate to be processed, which is set vertically in the cassette 4a.

On the other hand, the remaining substrate placed at the substrate relay position 8 is carried to the processing chamber 1a by a rotatable robot arm 10. The substrate 3 transported to the processing chamber 1a is subjected to a predetermined vacuum process, and then transported again to the processing chamber 1b by the robot arm 10, where the next vacuum process is performed.

When the substrate 3 is transported to the processing chamber 1b by the robot arm 10, the next unprocessed substrate is transported to the processing chamber 1a and subjected to vacuum processing. Furthermore, the substrate subjected to vacuum processing in the processing chamber 1b is carried by a robot arm to the processing chamber IC, where it is subjected to the next vacuum processing.

After the above-described vacuum processing is continuously performed, the processed substrate is again transported to the relay position 8 by the robot arm 10. Furthermore, the processed substrate is lifted by the transport chuck 9 (
The receiver is transferred to a cassette (not shown) and returned to the cassette 4a, completing a series of vacuum treatments.

On the other hand, during vacuum processing of the substrates set in the cassette 4a, the valve 2b is closed, N2 or air is introduced into the vacuum preliminary chamber 6b to create a wide atmospheric pressure, the valve 2d is opened, and the cassette 4b with the substrates set therein is opened. Set it in the vacuum preliminary chamber 6b.

Next, the vacuum preparatory chamber 6b is evacuated by opening the exhaust station valve 2b, and the inside of the vacuum preparatory chamber 6b is kept at a high vacuum comparable to that of the vacuum transfer chamber 5. After all the unprocessed substrates set in the cassette 4a are carried into the vacuum transfer chamber 5, when one processed substrate is returned to the cassette 4a, the cassette 4a is moved to the vacuum preliminary chamber 6a, and the cassette 4a is moved to the vacuum preliminary chamber 6a. ) 4 b is moved to the vacuum transfer chamber 5 , and the substrate set in the cassette ) 4 b is transferred to the vacuum transfer chamber 5 .

Next, the cassette 4b is again moved to the vacuum preliminary chamber 6b, the cassette 4a is carried to the vacuum transfer chamber, and the processed substrates are stored in the cassette 4a.

This operation is repeated, and after all the substrates set in cassette 4a are processed and collected into cassette 4a, the cassette 4a is removed from the vacuum preliminary chamber 6a while the substrates set in cassette 4b are being processed. Move to. Then, the valve 2a is closed, N2 or air is introduced into the vacuum preliminary chamber 6a to bring it to atmospheric pressure, the valve 2c is opened, the cassette 4a is carried out, and the processed substrate is taken out from the cassette 4a.

Since the preliminary vacuum chamber is composed of two chambers in this way,
While the substrates in one cassette are being processed, the other cassette can be taken out from one of the preliminary vacuum chambers, so the cassettes can be replaced without reducing the vacuum processing capacity of the substrates.

Not only that, but even if the time for introducing N2 or air into the vacuum preliminary chamber and the evacuation time are made long enough to prevent dust from flying up in the vacuum preliminary chamber, there is almost no effect on the throughput.

Furthermore, substrates are transported with the processing surface perpendicular to the horizontal surface in the vacuum preparation chamber, and with the processing surface facing downward in the vacuum transfer chamber, making it possible to perform vacuum processing with extremely little dust adhering to the processing surface. It is.

Next, FIG. 2 is a sectional view taken along the line A--A in FIG. 1. At the bottom of the vacuum transfer chamber 5, a processing chamber 1a and an IC are arranged. One processing chamber 1a is a processing chamber capable of performing parallel plate type reactive etching processing. Inside the processing chamber la, there is a cathode 13 surrounded by a shield 11 and an insulator 12.
and an anode 1 at ground potential opposite to the cathode 13.
4 are provided in parallel. The substrate 3 is fixed to the surface of the cathode 13 by a substrate holding ring 15a.

Further, a rotating magnetic field generator 16 is attached around the processing chamber 1a.

The other processing chamber 1c is a plasma processing chamber equipped with a plasma generation chamber 17 and a substrate heating mechanism 18 composed of a halogen infrared lamp.

Next, using this figure, the case of dry etching the A1 alloy film will be described in detail.

When transferring a substrate to the processing chamber 1a, the shield 11, the insulator 12, and the valve 2e provided on the outside of the cathode 13, which is a substrate mounting table, move up inside the substrate transfer chamber 5, and the position of the substrate holding ring 15a is adjusted to the position of the robot. The robot arm 10 rises to the height of the arm 10 and holds the substrate passed from the relay position 8 shown in FIG. 1, and rotates to convey the substrate onto the substrate holding ring 15a.

Next, the substrate holding ring 15a rises to bring the substrate 3 into close contact with the lower surface of the cathode 13. In this closely contacted state, the valve 2e is lowered to isolate the processing chamber 1a from the vacuum transfer chamber 5. When the processing chamber 1a is isolated from the vacuum transfer chamber 5, a reactive gas containing chlorine atoms is introduced from a gas introduction pipe 19 connected to the anode 14. This reactive gas is exhausted through the exhaust conduit 20a by a turbo molecular pump (not shown) directly connected to the exhaust conduit, while the processing chamber 1a is maintained at a predetermined pressure with the reactive gas.

Next, a rotating magnetic field generator 16 provided outside the processing chamber 1a
An alternating current voltage is applied to generate a rotating magnetic field parallel to the cathode 13 surface. and 13. to the cathode 16;
When a high frequency voltage of 56 MHz is applied, a reactive gas plasma with increased plasma density is generated by the magnetic field, and etching of the A1 alloy progresses. In particular, the etching of At-Cu alloys with increased plasma density due to the magnetic field
U residue can be effectively removed.

When etching is completed, the introduction of reactive gas is stopped, the processing chamber 1a is evacuated, the valve (not shown) immediately before the turbo molecular pump is closed, the valve 2e is raised, and the substrate holding ring 15a is lowered. Then, the robot arm 10 collects the substrate.

Next, by rotating and extending the robot arm 10, the substrate is placed on the substrate holding ring 15b of the processing chamber IC. Then, the substrate holding ring 15b is raised to hold the substrate on the substrate heating table 21. In this state, valve 2f
Lower the outer part 2g of the lower end of the flange part of the valve 2f.
The processing chamber IC is isolated from the vacuum transfer chamber 5 by bringing the IC into pressure contact with the lower side portion 5a of the vacuum transfer chamber 5.

The substrate is heated to 200° C. or higher by the substrate heating mechanism 18 while being evacuated to vacuum by a turbo molecular pump provided separately from the processing chamber 1a connected to the exhaust conduit 20b. next,
02 gas is introduced through a gas introduction pipe (not shown) connected to the plasma generation chamber 17, and while being exhausted through the exhaust conduit 20b, high frequency is applied to the high frequency electrode 22 to generate 02 gas plasma. 02 radicals are sprayed onto the substrate, and the photoresist remaining on the substrate after aluminum etching is removed by plasma as a mask for aluminum etching. This post-treatment by plasma peeling makes it possible to suppress after-corrosion, which is a problem in aluminum alloy film etching.

After plasma peeling is completed, gas introduction is stopped, the processing chamber 1c is evacuated, the valve 2f is raised, and the substrate holding ring 15 is
b is lowered, and the substrate is collected by the robot arm 10.

After performing the above processing, the processed substrate is collected into a force set while being chucked by the transport chuck 9 at the relay position 8, as explained in FIG. In the case of etching an aluminum alloy, since the aluminum alloy film is etched through the vacuum transfer chamber 5 which is evacuated to a high vacuum, the etching process can be performed with excellent reproducibility without being affected by residual gas.

Further, since the etching chamber and the post-processing chamber are separated through the vacuum transfer chamber 5, corrosion can be suppressed very effectively.

Furthermore, since the substrates are transported with the processing surface facing downward and vacuum processing is performed, when a large number of substrates are etched, the reaction products adhering to the anode 14 become large particles that fall onto the substrates, causing etching problems. Processing defects can be prevented, and the frequency of cleaning the etching processing chamber can be reduced.

As described above, the apparatus according to the embodiment shown in FIGS. 1 and 2 is capable of etching an aluminum alloy film with low dust generation and effective corrosion suppression treatment with high productivity. Is possible.

Next, FIG. 3 shows an embodiment of another invention,
This device completely suppresses the occurrence of corrosion after etching an aluminum alloy film.

Note that the same configuration as in the previous embodiment is used to transport the cassette with the substrate set vertically from the vacuum preparatory chamber to the vacuum transfer chamber and vacuum process the substrate in the processing chamber, so a description thereof will be omitted. do.

Further, the same constituent members as those in the previous embodiment will be described using the same reference numerals.

In this apparatus, two vacuum preliminary chambers 6a and 6b are connected to a vacuum transfer chamber 5 in which three processing chambers 1a, 1b, and an IC are arranged. A movement space 24 for the cassette 4a is provided in front of the valves 2c and 2d of these vacuum preliminary chambers 6a and 6b, and in the movement space 24, there is a connection from the vacuum preliminary chamber 6 as 6b to the front surface of the valves. Cassette ejecting mechanisms 23a and 23b are provided. Further, a cassette robot 27 is provided to transport the cassettes from the cassette installation positions 25a and 25b to the front of the heating furnace 26, and a transport mechanism 27 is further provided to transport the cassette 4a containing the processed substrates to the heating furnace 26. .

The operation of the device will be explained below.

The robot 27 transports a cassette with unprocessed substrates set in a cassette stocker (not shown) and sets it at the cassette installation position 25a, and at the same time breaks the vacuum in the vacuum preliminary chamber 6a to bring it to atmospheric pressure. The valve 2c is opened and the cassette 4a is transported to the vacuum preliminary chamber 6a by the cassette take-out mechanism 23a.

Then, the valve 2c is closed and the vacuum preliminary chamber 6a is evacuated. After the evacuation is completed, and during the vacuum processing of the substrate, the cassette robot 27 takes out the cassette 4a containing the next unprocessed substrate from the cassette stocker (not shown) and sets it at the cassette installation position 25b.

Using the same procedure, the cassette 4b is set in the vacuum preliminary chamber 6b. After the vacuum processing of the unprocessed substrates in the cassette in the vacuum preparatory chamber 6a is completed, the vacuum preparatory chamber 6a is returned to the atmosphere, and the cassette 4a containing the processed substrates is taken out to the cassette installation position 25a.

Next, the robot 27 picks up this cassette 4a and
As shown in the figure, the cassette installation position 25 is located at the front of the heating furnace 26.
transported to c. Then, open the heating furnace valve 29,
The cassette 4a is transferred to the heating furnace 26 by the cassette transport mechanism 28.
After heating at 150° C. for 30 minutes, the cassette 4a is taken out again by the transport mechanism 28. During this time, a cassette containing a new unprocessed substrate is set in the vacuum preliminary chamber 6a, and the next etching process is performed. The processed substrate in the cassette taken out from the heating furnace 26 is transported to the next process and subjected to the next process.

With the above-described apparatus, it is possible to almost completely suppress after-corrosion after etching the A1 alloy film. Furthermore, if a washing tank that can completely immerse a cassette containing processed substrates in pure water and a dryer that dries the washed substrates are installed between the heating furnace and the vacuum processing equipment, after-corrosion will be even more completely eliminated. It is possible to suppress the

In both of the above embodiments, a method was described in which the substrates are transferred one after another to three processing chambers and subjected to vacuum processing, but the present invention is not limited to such a method. A so-called parallel processing method may be used in which the vacuum processing is performed in a separate processing chamber. In addition, each processing room is
It is not limited to parallel plate RIE or plasma processing equipment, for example, anode couple type processing equipment or μ
It may also be a wave-based plasma generator or an ECR-based etching or thin film deposition device.

Furthermore, it may be a photoresist curing device using ultraviolet light or a device that introduces ozone from an ozone generating source and performs ozone treatment.

In addition, it is not necessary to have a rotating magnetic field generator,
The number of processing chambers is not limited to three as described above, and may be at least two or more. Further, all gases including Freon gas, N2 gas, etc. other than O2 gas and chlorine gas can be used in the processing chamber.

Further, in the first and second embodiments, vacuum processing is performed with the processing surface facing down, but this is an example of a case where the present invention exhibits its effects most, and is not necessarily limited to this. It's not a thing. Furthermore, although the cassettes were moved back and forth within the same vacuum preparatory chamber, the cassette containing unprocessed substrates could come out of one vacuum preparatory chamber, and the cassette containing processed substrates could be stored in the other vacuum preparatory chamber. It is possible.

Further, although the substrates were taken out from the same cassette and the processed substrates were collected, they may be collected into another predetermined cassette. Furthermore, the relative positions of the heating furnace, the washing tank, and the vacuum processing apparatus are not limited to this. Furthermore, the heating conditions are not limited to those shown in this example.

(Effects of the Invention) According to claims (1) to (13) of the present invention, it is possible to suppress the generation of dust on the processing surface of a substrate, and to improve the productivity of vacuum processing. can.

Furthermore, when etching aluminum alloys, etc., vacuum processing can be performed with good reproducibility without causing after-corrosion.

[Brief explanation of the drawing]

Fig. 1 is a schematic plan view of a vacuum processing apparatus showing an embodiment of the present invention, Fig. 2 is a sectional view taken along line A-A in Fig. 1, and Fig. 3 is a vacuum processing apparatus showing another embodiment of the invention. Schematic plan view of the device, 4th
1 and 5 are schematic diagrams of a conventional vacuum processing apparatus. DESCRIPTION OF SYMBOLS 1...Processing chamber, 2...Valve, 3...Substrate, 4...
... Cassette, 5... Vacuum transfer chamber, 6... Vacuum preliminary chamber, 7... Cassette transfer mechanism, 8... Board relay position, 9... Transfer chuck, 10... Robot arm,
26... Heating furnace. Patent applicant: Nichiden Anelva Co., Ltd. Patent attorney: Kenji Murakami

Claims (13)

[Claims] (1) A preliminary vacuum chamber that can be made airtight with a valve, a vacuum transfer chamber, and a plurality of processing chambers are provided, and the substrate in the preliminary vacuum chamber is transferred to an arbitrary processing chamber via the vacuum transfer chamber, After the substrate is vacuum-processed in the processing chamber, the substrate is transferred to any other processing chamber via the vacuum transfer chamber again, and after the substrate is vacuum-processed in the processing chamber, the substrate is transferred via the vacuum transfer chamber again. In the vacuum processing equipment for vacuum processing, the vacuum chamber is returned to the pre-vacuum chamber, and at least two pre-vacuum chambers each equipped with a mechanism that can be independently opened to the atmosphere and evacuated are provided, and each pre-vacuum chamber is installed vertically. It is equipped with a cassette that stores a plurality of substrates, and a transfer mechanism that reciprocates the substrates between a preliminary vacuum chamber and a vacuum transfer chamber in a vacuum, and transfers the substrates transferred to the vacuum transfer chamber from the cassette. A vacuum processing apparatus comprising a transfer mechanism that sequentially transports the processed substrates to the vacuum processing chamber and transfers the processed substrates vacuum-processed in the vacuum processing chamber to the cassette. (2) The transfer mechanism consists of a substrate holding means for holding the substrate pushed up by a substrate pushing means installed in the vacuum transfer chamber, and a substrate rotation means for horizontally rotating the substrate by 90 degrees while holding the substrate. , by a second transfer mechanism comprising a first transfer mechanism rotatable in the horizontal direction, and at least two arms including substrate holding means for holding the substrate, and configured to be rotatable in the horizontal direction and bend and extend. 2. The vacuum processing apparatus according to claim 1, wherein the vacuum processing apparatus is configured such that the substrates are transferred between the first and second transfer mechanisms at a predetermined relay position. (3) The vacuum processing apparatus according to claim (2), wherein the processing surface of the horizontal substrate faces downward. (4) The vacuum processing apparatus according to claim (1), further comprising a vacuum isolation means that is movable up and down within the vacuum transfer chamber and isolates the vacuum transfer chamber and the processing chamber. (5) The vacuum processing apparatus according to claim (4), wherein the vacuum isolation means includes a valve for separating the processing chamber and the vacuum transfer chamber at the lowest position of the vacuum transfer chamber. (6) The vacuum processing apparatus according to claim (4) or (5), wherein the vacuum isolation means is provided with a substrate holding mechanism that is vertically movable. (7) Claim (4) or (5) characterized in that at least one vacuum isolation means is equipped with a substrate heating mechanism.
) or the vacuum processing apparatus described in (6). (8) Claim (1) characterized in that the vacuum transfer chamber and the plurality of processing chambers are each equipped with an independent vacuum pump.
) Vacuum processing equipment described. (9) The vacuum processing apparatus according to claim (1), wherein at least one processing chamber is a plasma processing chamber equipped with parallel plate electrodes capable of processing substrates one by one. (10) The vacuum processing apparatus according to claim 9, further comprising a mechanism for generating a rotating magnetic field that rotates in a plane parallel to the electrode plane around the plasma processing chamber. (11) The vacuum processing apparatus according to claim (1), wherein at least one processing chamber includes a plasma generation chamber. (12) A preliminary vacuum chamber that can be made airtight with a valve, a vacuum transfer chamber, and a plurality of processing chambers are provided, and the substrate in the preliminary vacuum chamber is transferred to an arbitrary processing chamber via the vacuum transfer chamber; After the substrate is vacuum-processed in the processing chamber, the substrate is transferred to any other processing chamber via the vacuum transfer chamber again, and after the substrate is vacuum-processed in the processing chamber, the substrate is transferred via the vacuum transfer chamber again. In the vacuum processing equipment that performs vacuum processing after returning to the preliminary vacuum chamber,
At least two preliminary vacuum chambers each equipped with a mechanism that can be independently opened to atmosphere and evacuated are provided, and each preliminary vacuum chamber is equipped with a cassette containing a plurality of substrates installed vertically, and the substrates are vacuum-exhausted. The interior is equipped with a transfer mechanism that reciprocates between the preliminary vacuum chamber and the vacuum transfer chamber, and sequentially transfers the substrates transferred to the vacuum transfer chamber from the cassette to the vacuum processing chamber. A transfer mechanism is provided to transfer the vacuum-treated substrate to the cassette, and the substrate stored in the cassette is heated at 100°C on the atmospheric side of the vacuum preliminary chamber.
A vacuum processing apparatus comprising at least one heating furnace capable of heating as described above, and a mechanism for taking out a cassette from the vacuum preliminary chamber and moving the cassette to the heating furnace. (13) A water tank for washing the substrates stored in the cassettes and a heating furnace capable of heating the substrates to 100°C or higher are installed on the atmospheric side of the vacuum preliminary chamber, and the cassettes are taken out from the vacuum preliminary chamber and the cassettes are heated. 13. The vacuum processing apparatus according to claim 12, further comprising a cassette moving mechanism for moving the cassette to the heating furnace via the water tank.