JPS61124101A - サ−マルヘツドおよびその製造方法 - Google Patents
サ−マルヘツドおよびその製造方法Info
- Publication number
- JPS61124101A JPS61124101A JP59247513A JP24751384A JPS61124101A JP S61124101 A JPS61124101 A JP S61124101A JP 59247513 A JP59247513 A JP 59247513A JP 24751384 A JP24751384 A JP 24751384A JP S61124101 A JPS61124101 A JP S61124101A
- Authority
- JP
- Japan
- Prior art keywords
- resistance value
- value
- pulse
- resistor
- thermal head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 29
- 239000011521 glass Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 24
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 24
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 24
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 6
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 33
- 230000007423 decrease Effects 0.000 description 21
- 238000004364 calculation method Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 15
- 238000005259 measurement Methods 0.000 description 15
- 239000002245 particle Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 13
- 239000000523 sample Substances 0.000 description 11
- 238000009826 distribution Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000009966 trimming Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910018106 Ni—C Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910004479 Ta2N Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 244000145845 chattering Species 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 235000012976 tarts Nutrition 0.000 description 1
Landscapes
- Electronic Switches (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59247513A JPS61124101A (ja) | 1984-11-20 | 1984-11-20 | サ−マルヘツドおよびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59247513A JPS61124101A (ja) | 1984-11-20 | 1984-11-20 | サ−マルヘツドおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61124101A true JPS61124101A (ja) | 1986-06-11 |
| JPH0547961B2 JPH0547961B2 (enrdf_load_stackoverflow) | 1993-07-20 |
Family
ID=17164593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59247513A Granted JPS61124101A (ja) | 1984-11-20 | 1984-11-20 | サ−マルヘツドおよびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61124101A (enrdf_load_stackoverflow) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS539544A (en) * | 1976-07-15 | 1978-01-28 | Toshiba Corp | Thick film materialfor thermal head and thermal head |
-
1984
- 1984-11-20 JP JP59247513A patent/JPS61124101A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS539544A (en) * | 1976-07-15 | 1978-01-28 | Toshiba Corp | Thick film materialfor thermal head and thermal head |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0547961B2 (enrdf_load_stackoverflow) | 1993-07-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |