JPS61120219A - Constant voltage circuit - Google Patents

Constant voltage circuit

Info

Publication number
JPS61120219A
JPS61120219A JP24289984A JP24289984A JPS61120219A JP S61120219 A JPS61120219 A JP S61120219A JP 24289984 A JP24289984 A JP 24289984A JP 24289984 A JP24289984 A JP 24289984A JP S61120219 A JPS61120219 A JP S61120219A
Authority
JP
Japan
Prior art keywords
constant voltage
transistor
voltage
emitter
voltage circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24289984A
Other languages
Japanese (ja)
Other versions
JPH0556531B2 (en
Inventor
Takaharu Saeki
高晴 佐伯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP24289984A priority Critical patent/JPS61120219A/en
Publication of JPS61120219A publication Critical patent/JPS61120219A/en
Publication of JPH0556531B2 publication Critical patent/JPH0556531B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26Current mirrors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

PURPOSE:To obtain a constant voltage circuit small in dependence on temperature by combining a band gap type constant current circuit and the base-emitter voltage of a transistor. CONSTITUTION:A constant voltage circuit consists of a constant current source 1, npn transistors TR 4 and TR 10, TR 7 and TR 8 having the equal emitter area, a TR 11 having a large emitter area and resistances 9 and 12. Then the corrector current IC of the TR 11 is equal to KT.ln(n)/R3, where (n) and R3 show the emitter area ratio between the TR 10 and TR 11 and the resistance value of the resistance 12. At the same time, the output voltage does not substnatially depend on the current value of the source 1 and is set at a fixed level. The temperature coefficient can be set at zero by a selecting properly the ratio between resistance 9 and 12.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、集積回路化に好適な定電圧回路に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a constant voltage circuit suitable for integration into an integrated circuit.

従来例の構成とその問題点 従来、電源電圧に依存しない定電圧素子としてツェナー
ダイオードが広く用いられていたが、近年、集積回路の
低電圧化に伴ない、ツェナーダイオードの使用が困難に
なってきた。これに代わるものとして、第1図に示すよ
うな、トランジスタのベース・エミッタ電圧を利用した
定電圧回路が用いられる。以下、トランジスタのベース
・エミッタ電圧を用いた定電圧回路について説明する。
Conventional configurations and their problems Traditionally, Zener diodes have been widely used as constant voltage elements that do not depend on the power supply voltage, but in recent years, as the voltage of integrated circuits has become lower, it has become difficult to use Zener diodes. Ta. As an alternative to this, a constant voltage circuit using the base-emitter voltage of a transistor as shown in FIG. 1 is used. A constant voltage circuit using the base-emitter voltage of a transistor will be described below.

第1図において、1は電流源、2は定電圧出力端子、3
は接地端子、4はNPNトランジスタ、5.6は抵抗で
ある。いま、抵抗5,6の値をそれぞれR1、R2、ト
ランジスタ4のベース、エミッタ電圧を”BEとすると
、出力端子の電圧V。はvo=〔(R4+R2)/R2
〕×vBEとなる。一方、■BEは、電流源の電流値に
対する依存性が小さい(電流値が2倍になった時、約1
7mv増加する)ため、出力端子の電圧もほぼ一定電圧
となり、この結果、第1図の回路は定電圧回路として動
作する。
In Figure 1, 1 is a current source, 2 is a constant voltage output terminal, and 3 is a current source.
is a ground terminal, 4 is an NPN transistor, and 5.6 is a resistor. Now, if the values of resistors 5 and 6 are R1 and R2, and the base and emitter voltages of transistor 4 are BE, then the voltage at the output terminal V is vo=[(R4+R2)/R2
]×vBE. On the other hand, ■BE has a small dependence on the current value of the current source (when the current value doubles, approximately 1
7 mv), the voltage at the output terminal also becomes a substantially constant voltage, and as a result, the circuit shown in FIG. 1 operates as a constant voltage circuit.

しかしながら、上記の回路では、トランジスタのベース
・エミッタ電圧■BEが、  1.Bmv/dogの温
度依存性をもつため、定電圧回路の出力電圧も、−1、
8X (R,+R2)/R2mv/deqの温度依存性
をもち、出力電圧の温度特性が悪いという問題点を有し
ていた。
However, in the above circuit, the base-emitter voltage ■BE of the transistor is 1. Since it has a temperature dependence of Bmv/dog, the output voltage of the constant voltage circuit is also -1,
It has a temperature dependence of 8X (R, +R2)/R2mv/deq, and has a problem in that the temperature characteristics of the output voltage are poor.

発明の目的 本発明は、上記従来の問題点を解決するもので、ツェナ
ーダイオードより低い電圧で使用でき、しかも電圧の温
度依存性の小さな定電圧回路を提供することを目的とす
る。
OBJECTS OF THE INVENTION The present invention solves the above-mentioned conventional problems, and aims to provide a constant voltage circuit that can be used at a lower voltage than a Zener diode and has less temperature dependence of voltage.

発明の構成 本発明は、電流源が接続された定電圧出力端子にエミッ
タを接続し、ベースとコレクタを共通接続り、を第1の
PNP トランジスタのベース奮、同じくエミッタを定
電圧出力端子に接続した第2のPNPI−ランジスタの
ベースに接続するとともにエミJりを接地し、ベースと
コレクタを共通接続した第1のNPN l−ランジスタ
のベース奮、他端を接地した第1の抵抗にエミッタを接
続した、前記第1のNPN トランジスタよりエミッタ
面積の大きい第2のNPNトランジスタのベースに接続
し、かつ前記第1のPNP トランジスタのコレクタを
第2の抵抗を経由して第2のNPNトランジスタのコレ
クタに接続し、第2のPNPトランジスタのコレクタを
第1のNPN トランジスタのコレクタに接続した構成
を具備し、かつ、エミッタを接地し、ベースを前記第2
のNPN トランジスタのコレクタに接続し、コレクタ
を定電圧出力端2.4vで温度依存性の小さい定電圧回
路を実現で(きる。
Structure of the Invention The present invention connects the emitter to a constant voltage output terminal connected to a current source, connects the base and collector in common, connects the base of the first PNP transistor, and also connects the emitter to the constant voltage output terminal. The base of the first NPN l-transistor, whose base and collector are commonly connected, is connected to the base of the second PNPI-transistor, and the emitter is connected to the first resistor, whose other end is grounded. connected to the base of a second NPN transistor having a larger emitter area than the first NPN transistor, and connecting the collector of the first PNP transistor to the collector of the second NPN transistor via a second resistor. The collector of the second PNP transistor is connected to the collector of the first NPN transistor, the emitter is grounded, and the base is connected to the second NPN transistor.
It is possible to realize a constant voltage circuit with small temperature dependence by connecting the collector to the collector of an NPN transistor and connecting the collector to the constant voltage output terminal of 2.4V.

実施例の説明 第2図に、本発明による定電圧回路の回路例を示す。図
において、1は電流源、2は定電圧出力端子、3は接地
端子、4はNPN トランジスタ、7.8はエミッタ面
積の等しいPNP トランジスタ、10はNPN トラ
ンジスタ、11はエミッタ面積の大きなNPNトランジ
スタ、9.12は抵抗である。
DESCRIPTION OF EMBODIMENTS FIG. 2 shows a circuit example of a constant voltage circuit according to the present invention. In the figure, 1 is a current source, 2 is a constant voltage output terminal, 3 is a ground terminal, 4 is an NPN transistor, 7.8 is a PNP transistor with equal emitter area, 10 is an NPN transistor, 11 is an NPN transistor with a large emitter area, 9.12 is resistance.

以上のように構成された本実施例の定電圧回路について
、以下第2図の回路図にもとづいてその動作を説明する
The operation of the constant voltage circuit of this embodiment configured as described above will be explained below based on the circuit diagram of FIG. 2.

第2図において、トランジスタ1oとトランジスタ11
のエミッタ面積の比をn1抵抗12の抵抗1直をR3と
すると、トランジスタ11のコレクタ電流は下のように
表わされる。
In FIG. 2, transistor 1o and transistor 11
The collector current of the transistor 11 is expressed as below, assuming that the emitter area ratio of n1 is R3, and the resistor 1 of the resistor 12 is R3.

Ic  = kT −l1n(n)/R3(kはボルツ
マン定数、Tは絶対温度)一方、トランジスタ8のベー
ス・エミッタ電圧1をvBEl、抵抗9の抵抗値をR4
、トランジスタ4のベース・エミッタ電圧をvBE と
すると、出力端子2の電圧V。は、下記のようになる。
Ic = kT -l1n(n)/R3 (k is Boltzmann constant, T is absolute temperature) On the other hand, the base-emitter voltage 1 of transistor 8 is vBEl, and the resistance value of resistor 9 is R4
, when the base-emitter voltage of transistor 4 is vBE, the voltage at output terminal 2 is V. is as follows.

V口 = VBE 1+r cXR4+VBEここで、
上式の第1項、第2項は、電流源の電流値にほとんど依
存せず、第3項も電流値に対する依存性が小さいため、
出力電圧もほぼ一定電圧となる。
V mouth = VBE 1+r cXR4+VBE where,
The first and second terms in the above equation hardly depend on the current value of the current source, and the third term also has a small dependence on the current value, so
The output voltage is also approximately constant.

次に、本実施例の回路の温度特性について検討する。出
力電圧の温度係数は、 ここで、 となるので、Tm2O3°に1■BE1=vBE=70
0mVとすれば、V□ :2400 mVすなわち、本
実施例の定電圧回路の出力電圧は約2.4■である。
Next, the temperature characteristics of the circuit of this example will be discussed. The temperature coefficient of the output voltage is here, so Tm2O3° is 1■BE1=vBE=70
Assuming 0 mV, V□: 2400 mV, that is, the output voltage of the constant voltage circuit of this embodiment is approximately 2.4□.

発明の効果 本発明は、バンドギャップ型の定電流回路とトランジス
タのペース・エミッタ電圧を組み合わせることにより、
定電圧値が約2.4vと低く、シかも温度依存性の小さ
い定電圧回路を実現できるものである。
Effects of the Invention The present invention combines a bandgap type constant current circuit and a transistor's pace emitter voltage.
It is possible to realize a constant voltage circuit with a low constant voltage value of about 2.4 V and low temperature dependence.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来のトランジスタのベース・エミッタ電圧を
用いた定電圧回路の回路図、第2図は本発明の実施例に
おける定電圧回路の回路図である。 1・・・・・・電流源、2・・・・・・定電圧出力端子
、3・・・・・・接地端子、4,10.11・・・・・
・NPNトランジスタ、7,8・・・・・・PNP ト
ランジスタ、!、6,9゜12・・・・・・抵抗。 代理人の氏名 弁理士 中 尾 歓 男 ほか1名第1
FIG. 1 is a circuit diagram of a conventional constant voltage circuit using the base-emitter voltage of a transistor, and FIG. 2 is a circuit diagram of a constant voltage circuit according to an embodiment of the present invention. 1... Current source, 2... Constant voltage output terminal, 3... Ground terminal, 4, 10.11...
・NPN transistor, 7, 8...PNP transistor,! , 6,9°12... Resistance. Name of agent: Patent attorney Ken Nakao and 1 other person 1st
figure

Claims (1)

【特許請求の範囲】[Claims] 電流源が接続された定電圧出力端子に、ベースを共通接
続した第1、第2のPNPトランジスタのエミッタをそ
れぞれ接続し、且つ、ベースを共通接続した第1のNP
Nトランジスタおよび第1のNPNトランジスタよりエ
ミッタ面積の大きい第2のNPNトランジスタのコレク
タに、上記第1、第2のPNPトランジスタのコレクタ
を、それぞれ直接および抵抗を介して接続し、他方、エ
ミッタを直接および抵抗を介して接地し、且つ、前記第
2のPNPトランジスタ、および前記第1のNPNトラ
ンジスタのベース・コレクタを共通接続となし、また、
エミッタ接地した第3のNPNトランジスタのベースを
前記第2のNPNトランジスタのコレクタに接続し、且
つコレクタを定電圧端子に接続したことを特徴とする定
電圧回路。
The emitters of the first and second PNP transistors whose bases are commonly connected are connected to the constant voltage output terminal to which the current source is connected, and the first NP transistor whose bases are commonly connected.
The collectors of the first and second PNP transistors are connected directly and through a resistor, respectively, to the collectors of the second NPN transistor whose emitter area is larger than that of the N transistor and the first NPN transistor, and the emitters are connected directly. and grounded via a resistor, and the bases and collectors of the second PNP transistor and the first NPN transistor are connected in common, and
A constant voltage circuit characterized in that a base of a third NPN transistor whose emitter is grounded is connected to a collector of the second NPN transistor, and the collector is connected to a constant voltage terminal.
JP24289984A 1984-11-16 1984-11-16 Constant voltage circuit Granted JPS61120219A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24289984A JPS61120219A (en) 1984-11-16 1984-11-16 Constant voltage circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24289984A JPS61120219A (en) 1984-11-16 1984-11-16 Constant voltage circuit

Publications (2)

Publication Number Publication Date
JPS61120219A true JPS61120219A (en) 1986-06-07
JPH0556531B2 JPH0556531B2 (en) 1993-08-19

Family

ID=17095870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24289984A Granted JPS61120219A (en) 1984-11-16 1984-11-16 Constant voltage circuit

Country Status (1)

Country Link
JP (1) JPS61120219A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4674947B2 (en) * 2000-09-29 2011-04-20 オリンパス株式会社 Constant voltage output circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4674947B2 (en) * 2000-09-29 2011-04-20 オリンパス株式会社 Constant voltage output circuit

Also Published As

Publication number Publication date
JPH0556531B2 (en) 1993-08-19

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