JPS6111461B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron beam exposure apparatus that draws and forms a pattern using an electron beam, and particularly relates to a pattern that allows the accuracy of the pattern itself and the main body of the exposure apparatus to be easily measured from the drawn pattern. Regarding the forming method.

FIG. 1 is a block diagram schematically showing an electron beam exposure apparatus. In the figure, 11 is an electron optical lens barrel that emits an electron beam, 12 is a drive stage, 13,
14 is a position detection device that detects the planar position of the drive stage 12 using, for example, a laser beam.
In order to form a production mask used in manufacturing semiconductor devices using such an electron beam exposure apparatus, first a Cr film 22 is deposited on the surface of a glass substrate 21 as shown in FIG. Further, an electron beam resist (for example, PMMA) film 23 is formed on the surface of this Cr film 22, and then this glass substrate 21 is placed and fixed on the drive stage 12, and then the electron beam exposure device is operated. This is done by sequentially drawing a predetermined pattern on the resist film 23 using an electron beam, and then performing a phenomenon on the resist film 23 and then performing an etching process to form a pattern of Cr. In order to draw a fine pattern with high precision, it is necessary to make each of the electron optical lens barrel 11, drive stage 12, and position detection devices 13 and 14 extremely high in precision. However, no matter how high the accuracy is, it is impossible to completely eliminate errors, and since the electron beam is easily affected by external magnetic fields, positional deviations will occur in the drawn pattern. For this reason, after a pattern is drawn, the accuracy of the pattern must be measured for each production mask, and masks with poor accuracy must be selected and removed as defective masks. Conventionally, the method of selecting masks with poor accuracy has been to check the drawn pattern itself, which requires an extremely large amount of effort and time. I had a lot of flaws.

The present invention has been made in consideration of the above circumstances, and its purpose is to create a pattern using an electron beam exposure apparatus that allows easy measurement of pattern accuracy and precision of the electron beam exposure apparatus after pattern drawing and formation. The object of the present invention is to provide a forming method.

Hereinafter, one embodiment of the present invention will be described with reference to the drawings. First, as shown in FIG.
2. The glass substrate 21 on which the electron beam resist film 23 has been successively deposited is placed and fixed on the drive stage 12 of the electron beam exposure apparatus shown in FIG.

FIG. 3 is a plan view showing the glass substrate 21. As shown in FIG. After placing the glass substrate 21 on the drive stage 12, areas other than the main pattern formation area 31 located at the center of the substrate 21, for example, each of the auxiliary pattern formation areas 32 to 32 located at the four corners of the substrate 21, are 35, auxiliary patterns as shown in FIG. 4 are sequentially drawn. If the glass substrate 21 is for a 5-inch wafer, the size of the auxiliary pattern is, for example, about 420 μm×420 μm. After drawing the auxiliary patterns in the four regions 32 to 35, predetermined main patterns actually required when manufacturing a semiconductor device are sequentially drawn in the main pattern formation area 31. After drawing the main pattern, each of the areas 32 to 35
Then, as shown in FIG. 5, another auxiliary pattern that is paired with the auxiliary pattern shown in FIG. 4 is sequentially superimposed and drawn. Once the pattern has been drawn, it is then developed and etched.
Form a pattern with Cr.

FIG. 6 is a diagram showing an auxiliary pattern formed in one of the areas 32 to 35 after the development and etching processes described above have been performed. FIG. 6 shows auxiliary patterns when there are no errors caused by the electron beam exposure device and no influence from the external magnetic field of the electron beam, and shows a partial pattern 41 of one auxiliary pattern and a corresponding partial pattern 41 of the other auxiliary pattern. The partial patterns 42 and 42 are set in advance to be offset by each a (for example, 0.5 μm) in the width direction, and similarly, the partial patterns 4
3 and the partial patterns 44, 44 are set in advance to be offset by each b (for example, 1 μm) in the width direction. Therefore, after the pattern is drawn and formed, by detecting the mutual positional relationship, that is, the positional shift, between the two auxiliary patterns in each of the areas 32 to 35, the precision of the main pattern can be estimated based on this. Similarly, the accuracy of the electron beam exposure apparatus can also be estimated by analogy. Moreover, since the accuracy is measured only using the extremely narrow auxiliary pattern in the regions 32 to 35, rather than using the entire pattern as in the prior art, the measurement can be made extremely easily and in a short time.

The present invention is not limited to the above-mentioned embodiment; for example, the auxiliary patterns shown in FIGS. 4 and 5 may have any other shapes; in short, they are simple and can clearly detect positional deviations. It's fine as long as it's possible. Furthermore, the drawing position, number, and drawing order of the auxiliary patterns may be arbitrary.

As explained above, according to the present invention, a pair of auxiliary patterns are drawn in the same area before and after the main pattern is drawn, and the mutual positional relationship between the two auxiliary patterns is detected. It is possible to provide a pattern forming method using an electron beam exposure apparatus that allows the accuracy and accuracy of the electron beam exposure apparatus to be easily measured.

[Brief explanation of the drawing]

FIG. 1 is a schematic configuration diagram of an electron beam exposure apparatus, FIG. 2 is a sectional view showing a production mask before exposure, and FIGS. 3 to 6 each illustrate a method according to an embodiment of the present invention. FIG. 11... Electron optical lens barrel, 12... Drive stage, 1
3, 14...Position detection device, 21...Glass substrate, 3
1...Main pattern formation planned area, 32-35...Auxiliary pattern formation planned area, 41, 42, 43, 44
...partial pattern.

Claims (1)

[Claims] 1. When drawing a pattern on a substrate using an electron beam exposure device, a first auxiliary pattern consisting of a plurality of partial patterns having a predetermined width is drawn in at least one area other than the main pattern formation area of the substrate. After that, a main pattern is drawn, and after that, the main pattern is superimposed on the first auxiliary pattern, and has partial patterns that are paired with each partial pattern of the first auxiliary pattern and are shifted by different dimensions in the width direction. The drawing accuracy of the main pattern is measured by drawing a second auxiliary pattern, and then detecting the positional relationship in the width direction between corresponding partial patterns of the first and second auxiliary patterns. A pattern forming method using an electron beam exposure apparatus, characterized in that: