JPS61108186A - Electrootric device - Google Patents

Electrootric device

Info

Publication number
JPS61108186A
JPS61108186A JP59230946A JP23094684A JPS61108186A JP S61108186 A JPS61108186 A JP S61108186A JP 59230946 A JP59230946 A JP 59230946A JP 23094684 A JP23094684 A JP 23094684A JP S61108186 A JPS61108186 A JP S61108186A
Authority
JP
Japan
Prior art keywords
laser
film
photosensor
substrate
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59230946A
Other languages
Japanese (ja)
Inventor
Ryosuke Araki
亮輔 荒木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP59230946A priority Critical patent/JPS61108186A/en
Publication of JPS61108186A publication Critical patent/JPS61108186A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Abstract

PURPOSE:To stabilize the light output and to integrate a device, by providing a photo-sensor on one of the light outputting faces of a plane light-emitting diode so that the stabilization is obtained with feedback from the photosensor. CONSTITUTION:A laser 2 comprising compound semiconductor layers deposited on a substrate 1 on a compound semiconductor of III-V groups is covered with a dielectric multilayer film 3 to form a laser array. The dielectric multilayer film 3 has an effect of improving the reflectivity. On the other hand, a semicon ductor substrate 11 is provided with an avalanche photo-diode as a photo-sensor 12, which is laminated to the laser 2 in a one-to-one correspondence. Light outputted from the laser 2 and transmitted by the reflection film 3 is received by the sensor 12, which in turn negatively feeds it back to a laser drive circuit so as to control and stabilize the laser output. Such the plane light-emitting laser may be obtained, for example, by a method in which an N type InP film 22, a GaInAsP film 23 and a P type InP film 24 are layered on an N type InP substrate 21, an SiO2 film 25 is provided in a predetermined shape, and metallic electrodes 26 and 28 are attached to both the sides. As the photosensor, a Ge avalanche diode or the like is used.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体発光素子アレイの集積化に関する。特に
発光出力の安定性を向上せしめる半導体発光素子アレイ
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the integration of semiconductor light emitting device arrays. In particular, the present invention relates to a semiconductor light emitting element array that improves the stability of light emitting output.

〔従来の技術〕[Conventional technology]

半導体発光素子の中で高密度出力、コヒーレント光とい
った特徴からレーザーダイオードが注目ばれている。ま
た光の高速性の点から光情報処理が考えられるようにな
り、レーザーダイオードの集積化あるいは他の機能素子
と組合せによる集積化が待ち望まれている。従来のレー
ザーダイオードは、Ｉ−Ｖ族化合物基板上にＩ−Ｖ族化
合物を８層し、フォトエツチング技術や拡散技術によっ
て活性領域を基板面に平行に形成し、基板のへ千開面か
ら基板面に平行な光出力が得られるものである。Among semiconductor light emitting devices, laser diodes are attracting attention due to their characteristics such as high density output and coherent light. In addition, optical information processing has come to be considered due to the high speed of light, and integration of laser diodes or integration by combining with other functional elements is eagerly awaited. Conventional laser diodes are made by forming eight layers of an IV group compound on an IV group compound substrate, forming an active region parallel to the substrate surface using photoetching technology or diffusion technology, and then forming an active region parallel to the substrate surface from the cleavage plane of the substrate. Light output parallel to the surface can be obtained.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来のレーザーダイオードでは、基板の側面から光出力
されるため一導光接続がむずかしくレーザーダイオード
の集積化やレーザーダイオードと他の機能素子とを組合
せて集積化することがむずかしい。こういったことから
尺板に対して垂直方向に出カシれる面発光型のレーザー
ダイオードが考え出はれている。しかじ面発光レーザー
ダイオードは出力が不安定であるという問題点を有する
。そこで本発明はこのような問題点を解決するもので、
その目的とするところは安定した光出力が得られ、しか
も集積化可能な半導体発光装置を提供することにある。In conventional laser diodes, light is output from the side surface of the substrate, making it difficult to connect the light guide, making it difficult to integrate the laser diode or combine the laser diode with other functional elements. For these reasons, a surface-emitting laser diode that emits light in a direction perpendicular to the scale plate has been devised. However, surface emitting laser diodes have the problem of unstable output. Therefore, the present invention is intended to solve these problems.
The purpose is to provide a semiconductor light emitting device that can provide stable light output and can be integrated.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の半導体発光装置は、面発光レーザーからの光出
力の一部をフォトセンサーで検出し、この検出信号を面
発光レーザーに帰還して面発光レーザーの光出力を制御
したものであり、しかもフォトセンサーへの光出力は極
力小す＜シて出力の大半は反射するようにフォトセンサ
ー側へのレーザー出力面上に多層膜構造、金属薄膜によ
る半透膜あるいけピンホールを有する金属薄膜を形成し
たこと、ζらには基板に対し縦方向に面発光レーザーと
フォトセンサーを配置したことを特徴とする。The semiconductor light-emitting device of the present invention detects a part of the light output from the surface-emitting laser with a photosensor, and returns this detection signal to the surface-emitting laser to control the light output of the surface-emitting laser. The light output to the photosensor is kept as low as possible.In order to reflect most of the output, a multilayer film structure, a semi-transparent film made of a metal thin film, or a metal thin film with pinholes is placed on the laser output surface towards the photosensor. ζ et al. are characterized in that a surface emitting laser and a photosensor are arranged vertically with respect to the substrate.

〔作用〕[Effect]

本発明の上記の構成によれば面発光レーザーによシ基板
に対して垂直方向に光出力できることから接続配線が容
易に出き、フォトセンサーからの帰還により光出力が安
定化され、しかも反射層により光検出のため光出力を減
衰してレーザー光照射によるフォトセンサーの劣下を防
ぐとともにレーザー出力の高効率化がはかれる。According to the above configuration of the present invention, since the surface emitting laser can output light in a direction perpendicular to the substrate, connection wiring can be easily made, and the light output can be stabilized by feedback from the photosensor, and the reflective layer This attenuates the optical output for photodetection, thereby preventing deterioration of the photosensor due to laser light irradiation and increasing the efficiency of the laser output.

〔実施例１〕 第１図は、本発明の実施例における半導体発光素子アレ
イを析略的罠示した断面図である。Ｗ　−Ｖ族化合物系
の半導体基板（以後ｉ−ｖ族基板基板す）１に化合物半
導体を積層して形成したレーザー２が有り、ざらに誘雷
、体多層膜３を形成してレーザーアレイ基板を形成して
いる。誘電体多層膜３は、反射率を高めるためのもので
ある。[Example 1] FIG. 1 is a cross-sectional view schematically showing a semiconductor light emitting device array in an example of the present invention. There is a laser 2 formed by laminating a compound semiconductor on a W-V group compound semiconductor substrate (hereinafter referred to as an I-V group substrate substrate) 1, and a laser array substrate is formed by forming a multilayer film 3 with a lightning conductor and a body multilayer film 3. is formed. The dielectric multilayer film 3 is for increasing reflectance.

センサー基板は、半導体基板１１上にフォトセンサー１
２を形成したもので、フォトセンサーとしてアバランシ
ェ・フォトダイオードを用いた。このレーザーアレイ基
板とセンサー基板をレーザー２とフォトセンサー１２が
一対一に対応するように貼合せたものである。レーザー
２及びセンサー１２け第２図に示すようにレーザーの光
出力の一部（反射膜３を透過した光）をセンサー１２で
受光し光電変換してレーザー駆動制御回路１３にフ、イ
ードバシクしてレーザー出力の制御する。The sensor substrate includes a photo sensor 1 on a semiconductor substrate 11.
2, and an avalanche photodiode was used as the photosensor. This laser array substrate and sensor substrate are bonded together so that the laser 2 and the photosensor 12 correspond one to one. Laser 2 and sensor 12 As shown in FIG. Control of laser output.

面発光レーザーとして第３図に示すようにｎ型工ｎＰ基
板２１上ＶＣｎ型ＩｎＰ２２、Ｇ（Ｚ工ｎＡＳＰ２３、
Ｐ型工ｎＰ　２４を積層し、５ｉ０２絶縁層２５を所定
の形状にし、電極として金属電極２６．２８を形成して
レーザーとしたものであり、必要に応じて保護膜を形成
する。面発光レーザーとしてはこの他ＧａＡＳ　基板を
用いたものや第４図忙示すような従来からの横方向のレ
ーザー構造を縦方向にしたレーザー等が考えらねる。第
４図はｎ型Ｃ＋（ＬＡ８基板３１上にＡｌ　Ｏａ　Ａｓ
３２、ｎ型Ｏａ　Ａｓを積層したものをメサエッチング
して柱状にしてＺｎ拡散してＰ型領域３３を形成して面
発光レーザーとなすものであり必要に応じて誘電膜２７
を形成すればよい。ｔｒお図中３５は金属電極である。As a surface emitting laser, as shown in FIG.
P-type nP 24 is laminated, a 5i02 insulating layer 25 is formed into a predetermined shape, and metal electrodes 26 and 28 are formed as electrodes to form a laser, and a protective film is formed as necessary. Other surface-emitting lasers that can be considered include those using a GaAS substrate and lasers in which the conventional horizontal laser structure is made vertical, as shown in FIG. Figure 4 shows n-type C+ (AlOaAs on LA8 substrate 31).
32. A stacked layer of n-type OaAs is mesa-etched into a columnar shape and Zn is diffused to form a p-type region 33 to form a surface emitting laser. If necessary, a dielectric film 27 is formed.
All you have to do is form. 35 in the figure is a metal electrode.

またフォトセンサーけＧｅのアバランシエフオ　トダイ
オードが良いようであるが、Ｓｉ基板のアバランシェフ
ォトダイオードやアモルファスＳ？；によるフォトセン
サーあるいけ他のフォトセンサーでも効果は同様である
。ｒ 〔実施例２〕 第５図は、同一基板に面発光レーザーとセンサーを形成
した例を示す断面図である。ＩＮ−Ｖ族基板２１上に半
導体積層膜による発光部３６と、その裏面に金属層２８
及び誘電体層２５をけづんでフォトセンサー３８が半導
体積層膜によって形成畜れている。電極３７及び２９は
高融点金属からなり、しかも電極２６．２９は光を透過
するため薄くして光学的に半透過膜としである。なお電
極２９の配線抵抗が大きく問題となる場合は電極２９の
膜厚を厚くして低抵抗化を行い、電極２９にピンホール
を開けてセンサ一部へ光を導くことも考知られる。電極
３９け通常の金属配線でよい。Also, a Ge avalanche photodiode with a photosensor seems to be good, but a Si substrate avalanche photodiode or an amorphous S photodiode? The effect is the same whether it is a photosensor based on ; or other photosensors. r [Example 2] FIG. 5 is a sectional view showing an example in which a surface emitting laser and a sensor are formed on the same substrate. A light emitting part 36 made of a semiconductor laminated film is provided on the IN-V group substrate 21, and a metal layer 28 is provided on the back surface thereof.
A photosensor 38 is formed from a semiconductor laminated film by scraping the dielectric layer 25. The electrodes 37 and 29 are made of a high melting point metal, and the electrodes 26 and 29 are thin and optically semi-transmissive films in order to transmit light. Note that if the wiring resistance of the electrode 29 is large and becomes a problem, it may be considered to increase the film thickness of the electrode 29 to lower the resistance, and to make a pinhole in the electrode 29 to guide light to a part of the sensor. The 39 electrodes may be ordinary metal wiring.

〔実施例３〕 第６図は、面発光レーザー上層にフォトセンサーを形成
した例を示す断面図である。面発光レーザーは実施例２
と同様であり、面発光レー→１−の電極４１け透明導電
膜からなり、この電極４１上に絶縁膜４０を形成する。[Example 3] FIG. 6 is a sectional view showing an example in which a photosensor is formed on the upper layer of a surface emitting laser. Surface emitting laser is Example 2
This is similar to the above, and the electrode 41 of the surface emitting laser →1- is made of a transparent conductive film, and the insulating film 40 is formed on this electrode 41.

絶縁膜４０−ヒにＰ工Ｎフォト十ンサー４２を面発光レ
ーザーに重なるように形成する。Ｐ工Ｎフォトセンサー
は低温形成可能なため、レーザー基板に影響なく形成で
きる。A P/N photo sensor 42 is formed on the insulating film 40-1 so as to overlap the surface emitting laser. Since P-N photosensors can be formed at low temperatures, they can be formed without affecting the laser substrate.

第６図の４３及び４４はフォトセンサーの電極である。Reference numerals 43 and 44 in FIG. 6 are electrodes of the photosensor.

〔発明の効果〕〔Effect of the invention〕

以上述べたように本発明によれば、面発光レーザーから
の出力をフォトセンサーで検出、帰還して面発光レー→
１−の出力安定化ができ、しかも面発光レーザーとフォ
トセンサーは一基板に対し垂直な位置で形成されている
ことから占有面積が非常に小ζくすることができ、レー
ザーの集積化あるいけ、レーザーと仙の素子との集積化
が可能となる。センサー側のレーザー出力面に誘電体層
による多層膜構造や金層薄膜による半透膜あるＶ）はピ
ンホールを有する金属薄膜を形成することにより、反射
率の向上をはかりレーザー出力の向上をはかるとともに
センサーへの光導入も可能となる等、多くの効果を有す
る。As described above, according to the present invention, the output from the surface emitting laser is detected by the photo sensor and fed back to the surface emitting laser →
In addition, since the surface emitting laser and photosensor are formed perpendicularly to one substrate, the occupied area can be made extremely small, making it possible to increase the integration of lasers. , it becomes possible to integrate the laser and the optical element. On the laser output surface on the sensor side, there is a multilayer film structure with a dielectric layer and a semi-transparent film with a thin gold layer.V) By forming a thin metal film with pinholes, the reflectance is improved and the laser output is improved. It also has many effects, such as making it possible to introduce light into the sensor.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、本発明の電気光学装置の概要を示す断面図で
ある。 第２図は、レーザー出力のフィードバックを示すブロッ
ク図である。 第３図は、面発光レーザーの一例を示す断面図である。 第４図は、第３図とは別の面発光レーザーの例を示す断
面図である。 第５図は、本発明の実施例を示す断面図である。 第６図は、本発明の実施例を示す断面図である。 ２・・・・・・面発光ダイオード １２・・・・・・フォトセンサー ２９・・・・・・半透過の金属膜 ３６・・・・・・面発光レーザーダイオード３８・・・
・・・フォトセンサー ４０・・・・・・誘電体多層膜 ４２・・・・・・ＰＩＮフゾトセンサー以　　上FIG. 1 is a sectional view showing an outline of an electro-optical device of the present invention. FIG. 2 is a block diagram showing laser output feedback. FIG. 3 is a sectional view showing an example of a surface emitting laser. FIG. 4 is a sectional view showing an example of a surface emitting laser different from that shown in FIG. 3. FIG. 5 is a sectional view showing an embodiment of the present invention. FIG. 6 is a sectional view showing an embodiment of the present invention. 2...Surface emitting diode 12...Photo sensor 29...Semi-transparent metal film 36...Surface emitting laser diode 38...
... Photo sensor 40 ... Dielectric multilayer film 42 ... PIN fuzoto sensor and above

Claims (10)

【特許請求の範囲】[Claims] （１）面発光ダイオードの光出力面の一方の面にフォト
センサーを有することを特徴とする電気光学装置。(1) An electro-optical device characterized by having a photosensor on one of the light output surfaces of a surface emitting diode. （２）素子基板をはさんで基板の一方の面に面発光ダイ
オードを他方の面にフォトセンサーを形成したことを特
徴とする特許請求の範囲第１項記載の電気光学装置。(2) The electro-optical device according to claim 1, wherein a surface emitting diode is formed on one surface of the substrate and a photosensor is formed on the other surface of the substrate, sandwiching the element substrate. （３）面発光ダイオード上にフォトセンサーを形成した
ことを特徴とする特許請求の範囲第１項記載の電気光学
装置。(3) The electro-optical device according to claim 1, wherein a photosensor is formed on a surface emitting diode. （４）面発光ダイオードが面発光レーザーダイオードで
あることを特徴とする特許請求の範囲第１項記載の電気
光学装置。(4) The electro-optical device according to claim 1, wherein the surface-emitting diode is a surface-emitting laser diode. （５）面発光ダイオードが面発光レーザーダイオードで
あることを特徴とする特許請求の範囲第２項記載の電気
光学装置。(5) The electro-optical device according to claim 2, wherein the surface-emitting diode is a surface-emitting laser diode. （６）面発光ダイオードが面発光レーザーダイオードで
あることを特徴とする特許請求の範囲第３項記載の電気
光学装置。(6) The electro-optical device according to claim 3, wherein the surface emitting diode is a surface emitting laser diode. （７）面発光レーザーの出力面のうちフォトセンサーに
面する出力面を誘電体多層薄膜としたことを特徴とする
特許請求の範囲第５項又は６項記載の電気光学装置。(7) The electro-optical device according to claim 5 or 6, wherein the output surface of the surface-emitting laser facing the photosensor is made of a dielectric multilayer thin film. （８）面発光レーザーの出力面のうちフォトセンサーに
面する出力面に金属膜による半透膜を形成したことを特
徴とする特許請求の範囲第５項又は第６項記載の電気光
学装置。(8) The electro-optical device according to claim 5 or 6, characterized in that a semi-transparent film made of a metal film is formed on the output surface of the surface emitting laser that faces the photosensor. （９）面発光レーザーの出力面のうちフォトセンサーに
面する出力面を金属膜とし、しかも金属膜の一部にピン
ホールが有ることを特徴とする特許請求の範囲第５項又
は第６項記載の電気光学装置。(9) Claims 5 or 6 characterized in that the output surface of the surface-emitting laser facing the photosensor is made of a metal film, and a part of the metal film has a pinhole. The electro-optical device described. （１０）フォトセンサーがＰＩＮフォトダイオードであ
ることを特徴とする特許請求の範囲第６項記載の電気光
学装置。(10) The electro-optical device according to claim 6, wherein the photosensor is a PIN photodiode.
JP59230946A 1984-11-01 1984-11-01 Electrootric device Pending JPS61108186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59230946A JPS61108186A (en) 1984-11-01 1984-11-01 Electrootric device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59230946A JPS61108186A (en) 1984-11-01 1984-11-01 Electrootric device

Publications (1)

Publication Number Publication Date
JPS61108186A true JPS61108186A (en) 1986-05-26

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ID=16915786

Family Applications (1)

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JP59230946A Pending JPS61108186A (en) 1984-11-01 1984-11-01 Electrootric device

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995018479A1 (en) * 1993-12-29 1995-07-06 Honeywell Inc. Integrated laser power monitor
WO1999014834A1 (en) * 1997-09-12 1999-03-25 The Whitaker Corporation Semi-transparent monitor detector for surface emitting light emitting devices
JP2002026440A (en) * 2000-06-30 2002-01-25 Seiko Epson Corp Method for mounting element and optical transmitter
JP2005026465A (en) * 2003-07-02 2005-01-27 Sharp Corp Oxide semiconductor light emitting element
JP2006332696A (en) * 2001-03-02 2006-12-07 Innovative Solutions & Support Inc Image display generator for head-up display
JP2007150193A (en) * 2005-11-30 2007-06-14 Sony Corp Semiconductor light emitting device
JP2010182972A (en) * 2009-02-06 2010-08-19 Sony Corp Semiconductor light-emitting device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995018479A1 (en) * 1993-12-29 1995-07-06 Honeywell Inc. Integrated laser power monitor
WO1999014834A1 (en) * 1997-09-12 1999-03-25 The Whitaker Corporation Semi-transparent monitor detector for surface emitting light emitting devices
US6037644A (en) * 1997-09-12 2000-03-14 The Whitaker Corporation Semi-transparent monitor detector for surface emitting light emitting devices
JP2002026440A (en) * 2000-06-30 2002-01-25 Seiko Epson Corp Method for mounting element and optical transmitter
JP2006332696A (en) * 2001-03-02 2006-12-07 Innovative Solutions & Support Inc Image display generator for head-up display
JP2005026465A (en) * 2003-07-02 2005-01-27 Sharp Corp Oxide semiconductor light emitting element
JP2007150193A (en) * 2005-11-30 2007-06-14 Sony Corp Semiconductor light emitting device
JP4650631B2 (en) * 2005-11-30 2011-03-16 ソニー株式会社 Semiconductor light emitting device
JP2010182972A (en) * 2009-02-06 2010-08-19 Sony Corp Semiconductor light-emitting device
JP4674642B2 (en) * 2009-02-06 2011-04-20 ソニー株式会社 Semiconductor light emitting device

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