JPS61106767A - Edge surface layer reforming method of cutter or the like - Google Patents

Abstract

PURPOSE:To generate a thin film having a strong adhering property against an edge base material, to reform an edge surface layer, and to improve a mechanical property by performing a vacuum vapor-deposition processing the an edge of a cutter, and performing an ion implantation processing. CONSTITUTION:In a vacuum, a cutter W made of stainless steel, etc. is placed on a mask 1 and a negative voltage is applied, a vapor-depositing matter of Cr, etc. is evaporated toward said cutter from a vapor deposition source 2, and also anion such as an N ion, etc. is accelerated and irradiated from an ion source 3. By said ion, a thick reformed layer is generated by forming a mixing phase consisting of a base material atom of an edge of the cutter W, a vapor-depositing atom and the ion, and a vapor-deposited thin film whose adhering property is very strong against the edge base material is formed. In this way, an edge surface layer of said cutter W is reformed and the mechanical property can be improved.

Description

[Detailed Description of the Invention] Purpose of the Invention (Field of Industrial Application) This invention is applicable not only to daily necessities such as razors, kitchen knives, knives, and scissors, but also to cutting tools such as surgical instruments and mechanical cutting tools. This invention relates to a method for modifying the surface layer of a cutting edge of various types of cutlery.

(Prior Art and Problems to be Solved by the Invention) Conventionally, methods for modifying this type of blade edge surface layer include plating treatment and sputtering treatment. In the plating process, as shown in Fig. 4, the cutting edge base material B (stainless steel, shown as Fe) is
On the other hand, since the plating thin film F (Cr) was simply deposited, the plating thin film F was easily peeled off from the cutting edge base material B. In addition, in the sputtering process, as shown in FIG.
Ions (N
Although the bonding strength between the base material B of the blade edge and 1llllF (Cr) is improved compared to plating, there is still a risk that the thin film 1: may peel off from the base material B of the blade edge. Ta.

In addition, this type of technology includes
As shown in Japanese Patent No. 79, there is a method in which only ion implantation treatment is performed on the cutting edge. This ion implantation method is an indispensable method in the semiconductor industry as a technology to create materials with new characteristics by introducing a small amount of impurity into the surface layer.
Recently, it has become popular as a surface treatment technology for metal materials. Generally, in ion implantation of a cutting edge, a cutting tool placed in an implantation chamber is irradiated with a high-energy ion beam from an ion source, and the ions are introduced into the surface layer of the cutting edge.

In this ion implantation method, the ions are accelerated and collided with the cutting edge circle H, so most of the ions penetrate inside the cutting edge base material and form an alloy or compound on the surface layer, causing electrical and Scientific, optical and mechanical properties can be changed. However, there was a drawback that the penetration depth of ions irradiated to the cutting edge was about 1 μm at most, and that only a thin surface layer was modified. Therefore, it was not possible to form a relatively thick modified layer using only the ion implantation method, and no significant improvement in the mechanical properties of the cutting edge surface layer, that is, the wear resistance, corrosion resistance, and hardness, could be expected.

Structure of the Invention (Means and Effects for Solving Problems) In view of this problem, the present invention performs ion implantation treatment while performing vacuum deposition treatment on the blade edge. This vacuum evaporation method is a method of creating a film by heating a substance in a vacuum, evaporating it, and depositing the evaporated product on another substance.
The present invention is a combination of this vacuum evaporation method and the ion implantation method. That is, at the initial stage of thin film formation, some of the deposited atoms invade the surface layer of the cutting edge due to recoil due to collisions with ions, and at the same time, irradiated ions are also injected into the surface layer of the cutting edge. These irradiated ions create a mixing state in the surface layer of the cutting edge of the cutting edge base material atoms, irradiated ions, and vapor deposited atoms, forming a new mixed phase in which there is no discontinuous interface between the cutting edge base material and the vapor deposited thin film. .

(Example) Hereinafter, the present invention will be described in more detail with reference to FIGS. 1 to 3. FIG. 1 schematically shows an apparatus for carrying out the method of the present invention, in which a vapor deposition source 2 is directed toward a cutter W (stainless steel, Fe in FIG. 3) placed on a mask 1 in a vacuum. At the same time that (Cr 2 '') evaporates, ions (N ions) are accelerated and irradiated from the ion source 3. Note that a negative voltage is applied to the blade W.

Then, as shown in Figures 2 and 3, the ion 6
enters the blade edge base material atoms 4 with only kinetic energy, and also collides with the vaporized atoms 5 attached to the blade edge base material atoms 4, imparting kinetic energy to them, and due to this collision, some of the vaporized atoms 5 are attached to the blade edge. The ions enter into the base material atoms 4 and create a mixed state of atoms consisting of the cutting edge base material atoms 4, the incident ions 6, and the deposited atoms 5, forming a new mixed phase M. As the deposition progresses further, the implanted ions 6 do not penetrate into the base material atoms 4 of the cutting edge, and the chemically active ions 6 combine with the deposited atoms 5 to form a surface material compound with new functions. An R film F is formed. Furthermore, by continuing vapor deposition and ion implantation, a compound thin film F having an arbitrary thickness can be created. This three-way mixed phase M has the function of increasing the adhesion between the cutting edge base material B and the compound thin film F. This adhesion force is further improved by applying a negative voltage to the cutting edge. The composition of the compound thin film F can be arbitrarily changed by controlling the current of the implanted ions 6 and the deposition rate of the vaporized atoms 5.

In addition to the stainless steel described above, carbon steel, alloy steel, ceramics, reinforced plastic, aluminum, etc. may be used as the base material B for the cutting edge. In addition to the above-mentioned Or, examples of vacuum-deposited substances include Ti, Go, Fe, Ni, W, V, and M.
o, Ta, Zr, Hr, Nb, Re, O
31Cd, Atl, Pt, Si, Th
, metals such as AI and Mn, A1. O,,T i O,L
, Ta2O3, Sin, and WiO, etc., AI
N, BN, Ti N, Zr N, 1-1f N, Cr
Nitrides such as N, Co N, WN and srN, Ti
Carbides such as C, Si C, WClZr C, BC and MOC, borides such as Tie and W8 may also be used.

On the other hand, in addition to the above-mentioned N ions, ions include non-metals such as B, N, C, and O, which form chemical bonds with atoms constituting the cutlery and form a surface coating film, such as ions such as Eva N; and N-. ,NH: ,NH,-,CN-
1B, H, ion, 0:, 0- may be used.

Effects of the Invention In short, according to the present invention, a mixed phase can be formed between the base material of the cutting edge and the steamed thin film, and due to the presence of this mixed phase, the adhesion to the base material of the cutting edge is reduced compared to plating or sputtering treatments. In addition to being able to produce a film with very strong properties, it is also possible to form a relatively thicker modified layer than in the case of ion implantation treatment alone, making it possible to improve the mechanical properties of the cutting edge surface layer.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of an apparatus for implementing the method of the present invention, FIG. 2 is a conceptual diagram showing the thin film forming operation by the method of the present invention, and FIG.
FIG. 4 is a conceptual diagram showing a cross section of the blade edge surface layer after plating treatment, and FIG. 5 is a conceptual diagram showing a cross section of the blade edge surface layer after sputtering treatment.

Claims (1)

[Claims] 1. A method for modifying the surface layer of a cutting edge of cutlery, characterized in that the cutting edge is subjected to ion implantation treatment while being subjected to vacuum deposition treatment. 2. The method for modifying the surface layer of a cutting edge of a cutlery according to claim 1, wherein a negative voltage is applied to the cutting edge during the vacuum deposition process.