JPS61102810A - Manufacture of elastic surface wave element - Google Patents

Manufacture of elastic surface wave element

Info

Publication number
JPS61102810A
JPS61102810A JP22439684A JP22439684A JPS61102810A JP S61102810 A JPS61102810 A JP S61102810A JP 22439684 A JP22439684 A JP 22439684A JP 22439684 A JP22439684 A JP 22439684A JP S61102810 A JPS61102810 A JP S61102810A
Authority
JP
Japan
Prior art keywords
reflectance
oxide film
exposure
metallic coat
electrode pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22439684A
Other languages
Japanese (ja)
Inventor
Shigeaki Okubo
大久保 成章
Shingo Makino
真吾 牧野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Original Assignee
Renesas Semiconductor Manufacturing Co Ltd
Kansai Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Semiconductor Manufacturing Co Ltd, Kansai Nippon Electric Co Ltd filed Critical Renesas Semiconductor Manufacturing Co Ltd
Priority to JP22439684A priority Critical patent/JPS61102810A/en
Publication of JPS61102810A publication Critical patent/JPS61102810A/en
Pending legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To improve the dimensional accuracy of an electrode pattern and to obtain an elastic surface wave element which is stable characteristically and has a high reliability by adding the process for executing oxidation, so that light reflectance on the surface of a matellic coat formed on an piezoelec tric substrate can be dropped, before coating a resist member. CONSTITUTION:The metallic coat 3 is formed on the entire piezoelectric sub strate 1 by Al deposition. Then the surface of the metallic coat 3 is oxided to form an oxide film 11. This oxidation is conducted in order to reduce substan tially the reflectance on the surface of the metallic coat 3, and is executed after coloring by anode oxidation. Then the resist member 4 is coated on the oxide film 11, and a mask is covered to expose the member. At this exposure a light beam 8 transmits the resist member 4 and is reflected on the metallic coat 3. However, since the reflectance on the surface of the metallic coat 3 is significantly reduced by the oxide film 11, the exposure ratio of the resist member 11 which must not be exposed and located right under a light shielding film 7 is substantially reduced. Accordingly the exposure can be carried out with the high accuracy of a mask pattern transfer.

Description

【発明の詳細な説明】 主l上坐且且分! この発明は弾性表面波素子の製造方法で、詳しくは圧電
性基板上に膜状に被着形成される電極パターンの形成方
法に関する。
[Detailed Description of the Invention] Mainly sit on top! The present invention relates to a method for manufacturing a surface acoustic wave device, and more particularly to a method for forming an electrode pattern that is deposited in the form of a film on a piezoelectric substrate.

従米至弦歪 水晶基板等の圧電性基板の圧電効果による弾性表面波を
利用する弾性表面波素子はフィルター素子やSAW共振
子としては近年広く使用されるようになっている。この
弾性表面波素子の基本構造をSAW共振子を例に第3図
及び第4図に基づき説明すると、(1)は圧電性基板、
(2)は圧電性基板(1)上に所定のパターンで形成さ
れたAI!蒸着膜による電極パターンで、各々が櫛形で
互いに櫛歯をかみ合せて形成された一対のIDT電極(
2a)  (2b)と、IDT電極(2a)  (2b
)の両側に形成されたグレーティング電極(2c)  
(2d)を有する。IDT電極(2a)  (2b)は
一定間隔λで櫛歯を有するもので、このIDT電極(2
a)  (2b)にパルス電圧を印加すると圧電効果に
より隣り合う櫛歯電極間の基板表面に互いに逆位相の歪
みが生じて波長λの表面波が励起される。この表面波は
両αりのグレーティング電極(2c)  (2d)に到
達する毎に反射波と透過波に分かれ、両側のグレーティ
ング電極(2c)  (2d)からの反射波の位相が揃
うようにグレーティングff電極(2c)  (’2d
)間の間隔を決めておくことにより第4図の破線で示す
ような波長λの定在波が励起され共振子となる。
Surface acoustic wave elements that utilize surface acoustic waves due to the piezoelectric effect of a piezoelectric substrate such as a string-distorted crystal substrate have recently become widely used as filter elements and SAW resonators. The basic structure of this surface acoustic wave element will be explained based on FIGS. 3 and 4 using a SAW resonator as an example. (1) is a piezoelectric substrate,
(2) is an AI! formed in a predetermined pattern on the piezoelectric substrate (1)! An electrode pattern made of a vapor-deposited film, each of which is comb-shaped and has a pair of IDT electrodes formed by interlocking comb teeth (
2a) (2b) and IDT electrode (2a) (2b)
) Grating electrodes (2c) formed on both sides of
(2d). The IDT electrodes (2a) (2b) have comb teeth at regular intervals λ.
a) When a pulse voltage is applied to (2b), distortions with mutually opposite phases occur on the substrate surface between adjacent comb-teeth electrodes due to the piezoelectric effect, and a surface wave with a wavelength λ is excited. This surface wave is divided into a reflected wave and a transmitted wave each time it reaches the grating electrodes (2c) (2d) on both sides, and the grating is arranged so that the phases of the reflected waves from the grating electrodes (2c) (2d) on both sides are aligned. ff electrode (2c) ('2d
), a standing wave of wavelength λ as shown by the broken line in FIG. 4 is excited and becomes a resonator.

ところで、圧電性基板(1)上の電極パターン(2)は
微細パターンなため、これの形成は半導体素子の電極パ
ターン形成と同様なPR法(フォトレジスト法)で第5
図の(イ)〜(へ)に示す次の要領で行われている。
By the way, since the electrode pattern (2) on the piezoelectric substrate (1) is a fine pattern, it is formed using the PR method (photoresist method) similar to the formation of electrode patterns of semiconductor elements.
This is done in the following manner as shown in (a) to (f) in the figure.

先ず圧電性基板(1)上の全面に第5図の(イ)に示す
ようにAt蒸着にて金属被膜(3)を等厚に被着形成す
る0次に第5図の(ロ)に示すように金属被膜(3)上
にポジ型或はネガ型のレジスト材(4)を等厚に被着形
成する。
First, a metal coating (3) is deposited to a uniform thickness on the entire surface of the piezoelectric substrate (1) by At vapor deposition as shown in FIG. 5(a). Next, as shown in FIG. 5(b), As shown, a positive or negative resist material (4) is deposited to a uniform thickness on the metal film (3).

次にレジスト材(4)上に第5図の(ハ)に示すような
マスク(5)を被せてその上方より光(紫外線)を垂直
に照射してレジスト材(4)の露光を行う、マスク(5
)は例えば透明ガラス基板(6)の下面に所定のパター
ンで遮光膜(7)を固着したもので、レジスト材(4)
は遮光1m (7)で隠された部分以外が光を受は反応
して変質する。レジスト材(4)がポジ型の1゜ 場合は露光された部分のみが後の現像工程において除去
され、ネガ型の場合は露光された部分以外の非露光部分
のみが後の現像工程で除去される。
Next, a mask (5) as shown in FIG. 5(C) is placed over the resist material (4), and light (ultraviolet light) is vertically irradiated from above to expose the resist material (4). Mask (5
) is, for example, a light-shielding film (7) fixed to the lower surface of a transparent glass substrate (6) in a predetermined pattern, and a resist material (4)
If the area other than the part hidden by the shading 1m (7) receives light, it will react and change in quality. If the resist material (4) is positive type (1°), only the exposed areas will be removed in the subsequent development process, and if it is negative type, only the unexposed areas other than the exposed areas will be removed in the subsequent development process. Ru.

この露光と現像により第5図の(ニ)に示すように金属
被膜(3)の電極パターン形成予定部分上にのみレジス
ト材(4°)が残ると、後は第5図の(ホ)に示すよう
にレジスト材(4°)から露呈する金属被膜(3)をエ
ツチングで除去し、次にレジスト材(4゛)を除去すれ
ば第5図の(へ)に示すように圧電性基板(1)上に所
望の電)iパターン(2)が形成される。
As a result of this exposure and development, the resist material (4°) remains only on the portion of the metal coating (3) where the electrode pattern is to be formed, as shown in (d) of Fig. 5, and the rest is as shown in (e) of Fig. 5. If the metal film (3) exposed from the resist material (4 degrees) is removed by etching as shown, and then the resist material (4 degrees) is removed, the piezoelectric substrate ( 1) A desired pattern (2) is formed on top.

(η°  °と  ユ 占 ところで、圧電性基板(1)上の全面に形成される金属
被膜(3)はAA蒸着膜であってその表面は微細な凹凸
面であり、且つA4蒸着膜の表面の反射率は高い。その
ため、第5図の(ハ)における露光時に光がレジスト材
(4)を透過して金属被膜(3)上で乱反射する率が高
く、次の問題を引き起こしていた。
By the way, the metal coating (3) formed on the entire surface of the piezoelectric substrate (1) is an AA vapor-deposited film, and its surface has minute irregularities, and the surface of the A4 vapor-deposited film is Therefore, during the exposure shown in FIG. 5(c), the light transmits through the resist material (4) and is diffusely reflected on the metal coating (3) at a high rate, causing the following problem.

即ち、第6図に示すようにマスク(5)の遮光膜(7)
の端に沿って入射した光(8)はレジスト材(4)から
金属被膜(3)に垂直に入射して反射するが、金属被1
!!(3)の表面が反射率が高くて凹凸面であるので入
射光の多くが乱反射し、一部のものが遮光膜(7)真下
の感光されてはならないレジスト材(4°”)を部分的
に感光する率が高くて、露光時のマスクパターン転写精
度が悪くなることがあった。上述問題により露光し現像
して金属被膜(3)上に残ったレジスト材(4゛)はポ
ジ型の場合で第7図の(イ)に示すように所定のマスク
パターン(7′)より少し細くて内側に毛羽状の切れ込
み(9)が形成されたパターンとなり、このパターンそ
のままに電極パターン(2)が形成され、またレジスト
材(4°)はネガ型の場合で第7図の(ロ)に示すよう
にマスクパターン(7゛)より少し太くて外側に毛羽状
の異常突起(lO)が形成されたパターンとなり、この
パターンで電極パターン(2)が形成されることがあっ
た。このような不定形の電極パターン(2)は弾性表面
波素子の特性を不安定にして信頼性を悪くする要因にな
っていた。
That is, as shown in FIG. 6, the light shielding film (7) of the mask (5)
The light (8) incident along the edge of the resist material (4) enters the metal coating (3) perpendicularly and is reflected.
! ! Since the surface of (3) has a high reflectance and is uneven, much of the incident light is reflected diffusely, and some of it touches the resist material (4°) directly under the light-shielding film (7) that should not be exposed. Due to the above-mentioned problem, the resist material (4゛) that remained on the metal film (3) after exposure and development was positive type. In this case, as shown in FIG. 7(a), the pattern becomes a pattern that is slightly thinner than the predetermined mask pattern (7') and has a fluff-like cut (9) formed inside, and the electrode pattern (2) is formed as it is. ) is formed, and when the resist material (4°) is a negative type, it is slightly thicker than the mask pattern (7°) and has fluff-like abnormal protrusions (lO) on the outside, as shown in Figure 7 (b). This pattern sometimes forms the electrode pattern (2). Such an irregularly shaped electrode pattern (2) makes the characteristics of the surface acoustic wave element unstable and deteriorates its reliability. This was a contributing factor.

また弾性表面波素子は電極パターン(2)に外部より金
属細線をボンディングして電極の外部取出しを行って金
属キャップでシール等されて組立られていくが、この組
立時に金属キャンプなどからの金属屑が電極パターン(
2)上に落下して電極間ショートを招き、SAW共振子
等の弾性表面波装置製造の歩留りを悪(することがあっ
た。
In addition, surface acoustic wave elements are assembled by bonding thin metal wires to the electrode pattern (2) from the outside, taking the electrodes out to the outside, and sealing them with metal caps. During assembly, metal scraps from metal camps etc. is the electrode pattern (
2) The product may fall onto the surface, causing a short circuit between the electrodes, which may impair the production yield of surface acoustic wave devices such as SAW resonators.

、  占   °       の 本発明は上記問題点に鑑みてなされたもので、この問題
点を解決する本発明の技術的手段は圧電性基板上に形成
した金属被膜の表面を光の反射率を下げるよう酸化処理
する工程をレジスト材塗布の前に加えることである。
The present invention has been made in view of the above problem, and the technical means of the present invention to solve this problem is to reduce the reflectance of light on the surface of the metal coating formed on the piezoelectric substrate. This involves adding an oxidation treatment step before applying the resist material.

昨月 上記手段のように金属被膜の表面を酸化処理して反射率
を下げてから、レジスト材塗布、マスクによる露光を行
うと、金属被膜の表面の反射率が低(なっているので金
属被膜表面からの反射光が少なくなり、それだけマスク
パターンのレジスト材への転写精度が上がり、結果的に
圧電性基板上に形成される電極パターンにマスクパター
ンにより近似したものが得られる。またこのように形成
された電極パターン上に酸化処理で形成された酸化膜を
残しておくことにより、金属屑の落下にて電極間がショ
ートするといった問題が解決される。
Last month, if you oxidize the surface of the metal coating to lower its reflectance, then apply a resist material and expose it to light using a mask, the reflectance of the surface of the metal coating will be low. As the amount of light reflected from the surface is reduced, the accuracy of transferring the mask pattern to the resist material increases accordingly, and as a result, a mask pattern that more closely resembles the electrode pattern formed on the piezoelectric substrate can be obtained. By leaving the oxide film formed by oxidation treatment on the formed electrode pattern, the problem of short-circuiting between the electrodes due to falling metal debris can be solved.

皇!± 以下本発明の製造方法を第1図及び第2図に基づき説明
する。
Emperor! ± The manufacturing method of the present invention will be explained below based on FIGS. 1 and 2.

先ず第1図の(イ)に示すように従来同様に圧電性基板
(1)上全面にAI蒸着で金属被膜(3)を形成する0
次に本発明は金属被ff (3)の表面を酸化処理して
第1図の(ロ)に示すように酸化膜(1))を形成する
。この酸化処理は金属被yI! (3)の表面の反射率
を大きく低下させることを目的に行われ、具体的には金
属被膜(3)がAJ蒸着膜であることがらして次の陽極
酸化法にて染色させて行う。
First, as shown in FIG. 1(a), a metal coating (3) is formed on the entire surface of the piezoelectric substrate (1) by AI vapor deposition as in the conventional method.
Next, in the present invention, the surface of the metal covering ff (3) is oxidized to form an oxide film (1) as shown in FIG. 1 (B). This oxidation treatment is a metal coating! This is done for the purpose of greatly reducing the reflectance of the surface of (3). Specifically, since the metal coating (3) is an AJ vapor deposited film, it is dyed using the following anodic oxidation method.

例えば第2図に示すように金属被膜(3)を有する圧電
性基板(1)と電極板(12)を硫酸溶液などの電解液
(13)に浸漬して金属被膜(3)にプラス電圧、電極
板(12)にマイナス電圧を印加して金属被It!(3
)の表面を陽極酸化する。この陽極酸化で形成される酸
化膜(1))はr−A1203で多孔性のため、後で沸
騰水処理、過熱蒸気処理を行って封孔して γ−A1203 ・H2Oの耐食性、絶縁性に優れた酸
化膜(1))に成す、また、このような陽極酸化にて酸
化膜(1))を反射率の低い黒色等の所望の色に染色す
る。
For example, as shown in FIG. 2, a piezoelectric substrate (1) having a metal coating (3) and an electrode plate (12) are immersed in an electrolytic solution (13) such as a sulfuric acid solution, and a positive voltage is applied to the metal coating (3). A negative voltage is applied to the electrode plate (12) and the metal plate It! (3
) surface is anodized. The oxide film (1)) formed by this anodization is r-A1203 and is porous, so it is later treated with boiling water and superheated steam to seal the pores and improve the corrosion resistance and insulation properties of γ-A1203 and H2O. An excellent oxide film (1)) is formed, and the oxide film (1)) is dyed in a desired color such as black with low reflectance by such anodic oxidation.

次に従来同様にして先ず第1図の(ハ)に示すように酸
化1)i! (1))上にレジスト材(4)を塗布し、
レジスト材(4)上に第1図の(ニ)に示すようにマス
ク(5)を被せてレジスト材(4)の露光を行う、この
露光時の光(8)はレジスト材(4)を透過して金属被
1)5! (3)で反射するが、金属被膜(3)の表面
は染色された酸化1j! (1))で反射率が大幅に低
下しているので、反射光が少なく乱反射率が低下するの
で遮光膜(7)真下の感光されてはならないレジスト材
(4“)の感光される率が大幅に少なくなる。従°って
マスクパターン転写精度良く露光が行える。
Next, as in the conventional method, first oxidize 1) i! as shown in FIG. 1(c). (1)) Apply resist material (4) on top,
A mask (5) is placed over the resist material (4) as shown in (d) in Figure 1, and the resist material (4) is exposed to light. Transparent and metal coated 1) 5! (3), but the surface of the metal coating (3) is stained with oxidation 1j! Since the reflectance in (1)) has decreased significantly, there is less reflected light and the diffused reflectance decreases, so the exposure rate of the resist material (4") that should not be exposed directly under the light shielding film (7) is reduced. Therefore, exposure can be performed with high mask pattern transfer accuracy.

露光が完了するとマスク(5)を外し、レジスト材(4
)を現像して第1図の(ホ)に示すようにマスクパター
ンにほぼ一致したレジスト材(4°)を残す。
When the exposure is completed, remove the mask (5) and apply the resist material (4).
) is developed to leave a resist material (4°) that almost matches the mask pattern, as shown in (e) of FIG.

次に第1図の(へ)に示すように金属被1臭(3)と酸
化FA(1))のレジスト材(4″)から露呈する部分
をエツチングで除去し、最後にレジスト材(4″)を除
去して第1図の(ト)に示す電極パターン(2′)を得
る。この電極パターン(2′)は表面が酸化PE! (
1))で被覆されているので耐食性に優れ、また金属屑
などが落下しても表面の絶縁性酸化膜(1))によって
電極間のショート事故が防止される。
Next, as shown in FIG. '') is removed to obtain an electrode pattern (2') shown in (G) of FIG. This electrode pattern (2') has an oxidized PE surface! (
1)), it has excellent corrosion resistance, and even if metal debris falls, the insulating oxide film (1)) on the surface prevents short-circuit accidents between the electrodes.

尚、このように電極パターン(2′)を形成した弾性表
面波素子に対し、後で電極パターン(2′)上に金II
I線がボンディングされるが、このボンディングは酸化
膜(1))を薄<シておけばボンディング時の力で酸化
II! (1))が破れて十分良好にボンディングする
ことが可能となり問題無い。又は電極パターン(2°)
には図示しないがボンディング専用バンドが形成されて
いるので、このポンディングパッド上のみ酸化処理を行
わずに置き、金属細線のボンディングを良好ならしめて
もよい。
In addition, for the surface acoustic wave element in which the electrode pattern (2') is formed in this way, gold II is later deposited on the electrode pattern (2').
The I wire is bonded, but for this bonding, if the oxide film (1) is made thin, the force during bonding will cause the oxidation II! (1)) is torn and it is possible to bond sufficiently well, so there is no problem. Or electrode pattern (2°)
Although not shown in the figure, since a dedicated band for bonding is formed, only the bonding pad may be placed without oxidation treatment to improve bonding of the thin metal wire.

金ユ坐効1 本発明によれば弾性表面波素子の電極パターン形成時の
露光精度が一段と向上し、従って電極パターンの寸法精
度が向上して特性的に安定した高信頼度の弾性表面は素
子が提供できる。
According to the present invention, the exposure accuracy during electrode pattern formation of a surface acoustic wave device is further improved, and the dimensional accuracy of the electrode pattern is improved, resulting in a highly reliable elastic surface with stable characteristics. can be provided.

また電極パターン上の酸化膜により耐食性に優れた長寿
命の弾性表面波素子が提供でき、而も電極パターン上に
金属屑等が付着しても?I!極間がショートする確率が
少くて弾性表面波素子を使用したSAW共振子等の製造
の歩留り向上が図れる。
Furthermore, the oxide film on the electrode pattern makes it possible to provide a long-life surface acoustic wave element with excellent corrosion resistance, and even if metal debris adheres to the electrode pattern? I! The probability of short-circuiting between poles is low, and the yield of manufacturing SAW resonators using surface acoustic wave elements can be improved.

【図面の簡単な説明】[Brief explanation of drawings]

第1図の(イ)〜(ト)は本発明の詳細な説明するため
の各製造工程での弾性表面波素子部分断面図、第2図は
第1図の(ロ)の工程における酸化処理装置の概略断面
図である。第3図及び第4図は弾性表面波素子の平面図
及びA−A線断面図、第5図の(イ)〜(へ)は従来の
弾性表面波素子製造方法を説明するための各製造工程で
の弾性表面波素子部分断面図、第6図は第5図の(ハ)
の露光工程での拡大断面図、第7図の(イ)(ロ)は第
5図の(ニ)の現像後のレジスト材バクーンの二側を示
す各平面図である。 (1)−・圧電性基板、(2°)−電極パターン、(3
1−全屈被膜、(1)) −・酸化膜。 特 許 出 願 人  関西日本電気株式会社代   
 理    人   江  原   省  吾江   
原      秀
(A) to (G) in FIG. 1 are partial cross-sectional views of the surface acoustic wave element at each manufacturing process for detailed explanation of the present invention, and FIG. 2 is an oxidation treatment in the step (B) in FIG. FIG. 2 is a schematic cross-sectional view of the device. 3 and 4 are a plan view and a cross-sectional view taken along the line A-A of the surface acoustic wave device, and FIGS. A partial cross-sectional view of the surface acoustic wave device in the process, Figure 6 is (c) in Figure 5.
FIGS. 7(a) and 7(b) are plan views showing two sides of the resist material bag after development in FIG. 5(d). (1)--piezoelectric substrate, (2°)-electrode pattern, (3
1-Total reflex film, (1)) -・Oxide film. Patent applicant: Kansai NEC Co., Ltd.
Rijin Gangwon Province Gojiang
Hide Hara

Claims (1)

【特許請求の範囲】[Claims] (1)圧電性基板上に形成した金属被膜を選択的に露光
し現像して圧電性基板上に所定の電極パターンを形成す
るに際し、前記圧電性基板上の金属被膜表面を露光に先
立って光の反射率を下げるよう酸化処理する工程を加え
たことを特徴とする弾性表面波素子の製造方法。
(1) When selectively exposing and developing a metal coating formed on a piezoelectric substrate to form a predetermined electrode pattern on the piezoelectric substrate, the surface of the metal coating on the piezoelectric substrate is exposed to light prior to exposure. A method for manufacturing a surface acoustic wave device, characterized by adding an oxidation treatment step to reduce the reflectance of the surface acoustic wave device.
JP22439684A 1984-10-25 1984-10-25 Manufacture of elastic surface wave element Pending JPS61102810A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22439684A JPS61102810A (en) 1984-10-25 1984-10-25 Manufacture of elastic surface wave element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22439684A JPS61102810A (en) 1984-10-25 1984-10-25 Manufacture of elastic surface wave element

Publications (1)

Publication Number Publication Date
JPS61102810A true JPS61102810A (en) 1986-05-21

Family

ID=16813090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22439684A Pending JPS61102810A (en) 1984-10-25 1984-10-25 Manufacture of elastic surface wave element

Country Status (1)

Country Link
JP (1) JPS61102810A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6136175A (en) * 1995-12-21 2000-10-24 Siemens Aktiengesellschaft Method of producing an electronic component, in particular a surface acoustic wave component

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6136175A (en) * 1995-12-21 2000-10-24 Siemens Aktiengesellschaft Method of producing an electronic component, in particular a surface acoustic wave component

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