JPS61102529A - Semiconductor temperature detector - Google Patents
Semiconductor temperature detectorInfo
- Publication number
- JPS61102529A JPS61102529A JP22292184A JP22292184A JPS61102529A JP S61102529 A JPS61102529 A JP S61102529A JP 22292184 A JP22292184 A JP 22292184A JP 22292184 A JP22292184 A JP 22292184A JP S61102529 A JPS61102529 A JP S61102529A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- base
- transistor
- circuit
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は温度を検出する半導体温度検出器に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a semiconductor temperature detector for detecting temperature.
従来技術を第５図乃至第６図を参照して説明する。従来
の半導体検出器としてはトランジスタが良く用いられて
いる。第５図（二示す様にトランジスタ（２ｂ）ｌ二定
電流を流すと、トランジスタのベース・エミッタ電圧Ｖ
ｂｓは第６図の様に温度に比例して変化するので、この
ベース・エミッタ電圧Ｖｂａを温度検知出力として検出
し温度の測定を行なっている。■ｂ、は温度Ｔに対して
良い直線性を示しＶｂｓ ＝ ａＴ ＋ ｂ
と表わされる。ここでａは温度係数、ｂは定数しかし、
Ｖｂｓの温度係数ａは一般的に２ｍＶ ／ Ｋ程度で
しかなく温度感度が低いという欠点があつた。The prior art will be explained with reference to FIGS. 5 and 6. Transistors are often used as conventional semiconductor detectors. As shown in Figure 5 (2), when a constant current is applied to transistor (2b), the base-emitter voltage of the transistor is V.
Since bs changes in proportion to temperature as shown in FIG. 6, this base-emitter voltage Vba is detected as a temperature detection output to measure temperature. (2) b shows good linearity with respect to temperature T and is expressed as Vbs = aT + b. Here, a is the temperature coefficient, b is a constant, but
The temperature coefficient a of Vbs is generally only about 2 mV/K, which has the disadvantage of low temperature sensitivity.
本発明の目的は上記の様な欠点を改善した温度感度の高
い半導体温度検出器を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor temperature detector with high temperature sensitivity that overcomes the above-mentioned drawbacks.
本発明はトランジスタのベース・エミッタ間及びベース
・コレクタ間に抵抗を接続したトランジスタ回路が、同
一半導体基板に形成された温度検出素子Ｃ＝定電流を流
し、温度に比例して変化する電圧又は電位を検出し温度
を測定する半導体検出器である。In the present invention, a transistor circuit in which a resistor is connected between the base and emitter and between the base and collector of a transistor is formed on the same semiconductor substrate, and a temperature detection element C = a constant current flows, and a voltage or potential that changes in proportion to temperature. It is a semiconductor detector that detects and measures temperature.
本発明によれば、従来の数倍の温度感度をもつ大きな出
力が得られるので温度検出器の測定精度が増し、性能が
向上する。According to the present invention, it is possible to obtain a large output with several times the temperature sensitivity of the conventional sensor, thereby increasing the measurement accuracy of the temperature detector and improving its performance.
本発明の実施例を第１図乃至第２図を参照して説明する
。第１図は本発明の半導体温度検出器の回路構成図であ
る。温度検出トランジスタ回路（１）はＩＣプロセス技
術により同一半導体基板にトランジス゛り（２ａ）と抵
抗Ｒ，−（３ａ） 、几ｔ−”（ａｂ）が形成され、ト
ランジスタのベース・コレクタ間（二抵抗Ｒ１がベース
・エミッタ間Ｃ二抵抗Ｒ７が接続されたものである。こ
の温度検出トランジスタ回路に定電流回路（４ａ）が接
続されて、本発明の半導体温度検出器を構成している。Embodiments of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a circuit diagram of a semiconductor temperature detector according to the present invention. In the temperature detection transistor circuit (1), a transistor (2a), a resistor R, - (3a), and a t-'' (ab) are formed on the same semiconductor substrate using IC process technology, and between the base and collector of the transistor (two resistors R1 is connected to a base-emitter C2 resistor R7. A constant current circuit (4a) is connected to this temperature detection transistor circuit to constitute the semiconductor temperature detector of the present invention.
本発明の半導体温度検出器の出力Ｖ、は出力端子（５）
から取り出され、電流Ｉを流した時の出力ｖ０は
・、■。＝（１十と・ １・ ＩＲ２■］
■）ｖｂ、＋Ｒ１（匹−■。、）である。但し、ｈｆ＠
はエミッタ接地の電流増幅率、■。。はコレクタ遮断電
流。The output V of the semiconductor temperature sensor of the present invention is the output terminal (5)
The output v0 when the current I is applied is ・, ■. = (10 and 1 IR2■]
■) vb, +R1 (-■.,). However, hf@
is the current amplification factor of the common emitter, ■. . is the collector cut-off current.
第２項は定数（＝Ｃ）と見なせ、第１項に於いても、一
般にｈ ｔ ａ ＞＞ １であるので、上式はＲ。The second term can be regarded as a constant (=C), and in the first term as well, generally h ta >> 1, so the above formula is R.
ｖＯ” （１＋ １） Ｖｂａ ＋ Ｃと書き換えられ
る。即ち、出力ｖ０はトランジスタのベース・エミッタ
電圧Ｖｂｅに比例した出力であり、温度感度は、Ｖｂ。vO" (1+1) Vba + C. That is, the output v0 is an output proportional to the base-emitter voltage Vbe of the transistor, and the temperature sensitivity is Vb.
の（１＋−！！ｑ）倍である。温Ｒ意
度検出器としては温度感度が高い方が好ましく、Ｒ，／
几、とする必要がある。例えば、Ｖｂｓの温度係数が２
．０ ｍＶ／にでＲ１／Ｒ，＝＝９とすれば、ｖｏは２
０．０ｍＶ／にの温度係数即ち１０倍もの温度感度を持
つことになる。この感度もＲ１／Ｒ，を大きくすること
により際限なく増大させられるものではなく、ｖｃＣ＞
ｖ０＝（ｌ十七） Ｖｂｅ ＋ Ｃの関係から制限は受
ける。It is (1+-!!q) times. As a temperature R temperature detector, it is preferable that the temperature sensitivity is high, and R,/
It is necessary to do so. For example, the temperature coefficient of Vbs is 2
．． If R1/R,==9 at 0 mV/, vo is 2
It has a temperature coefficient of 0.0 mV/, that is, a temperature sensitivity of 10 times. This sensitivity cannot be increased indefinitely by increasing R1/R, but vcC>
v0=(17) Restrictions apply from the relationship of Vbe + C.
本発明の半導体温度検出器は、従来の検圧器の数倍以上
の温度感度を峙ち、更に、抵抗Ｒ，，Ｒ辺抵抗値を変え
ることにより感度を任意の値に設定できるという特徴も
合わせ持っている。従って実際に温度検出装置の温度検
出部として使われる場合４二は、出力ｖｏは信号処理回
路に入力されるが、感度が大きいので増幅の必要がなく
なるためイ１号処理回路が簡単になり、かつ温度測定の
精度も向上する。抵抗Ｒ＋ （３ａ） 、 Ｒ４（３ｂ
）は同一半導体基板に個別に形成されるが一般ではある
が、第２図に模式的に示した様にトランジスタのベース
層（７）の拡散抵抗を利用したものでも良い。温度感度
を上げるためにはＲｓ＞Ｒｔとする必要があり、抵抗Ｒ
１に相当するベース層の面積を抵抗几２に相当するベー
ス層の面積より広くしな１すればならない。そのために
は１回路パターンに工夫が必要であり、第３因は抵抗Ｒ
１に相当するベース層を蛇行させてＲ１／′ＥＬ２の比
を大きくした回路パターン例、第４図は、抵抗絢に相当
するベース層が抵抗Ｒ１ｌ二相当するベース層の周囲を
取り囲む様にしてＲ，／Ｒ，の比を大きくした回路パタ
ーン例である。この様な構造の方が素子間のばらつきも
少なく精度も良いものとなる。The semiconductor temperature detector of the present invention has a temperature sensitivity several times higher than that of conventional pressure detectors, and also has the feature that the sensitivity can be set to any value by changing the resistance value of the resistors R and R. have. Therefore, when actually used as the temperature detection part of a temperature detection device, the output vo is input to the signal processing circuit, but since the sensitivity is high, there is no need for amplification, so the processing circuit in No. 1 is simplified. Moreover, the accuracy of temperature measurement is also improved. Resistance R+ (3a), R4 (3b
) are generally formed individually on the same semiconductor substrate, but they may also be formed using the diffused resistance of the base layer (7) of the transistor as schematically shown in FIG. In order to increase the temperature sensitivity, it is necessary to set Rs>Rt, and the resistance R
The area of the base layer corresponding to resistor 1 must be made larger than the area of the base layer corresponding to resistor 2. To achieve this, it is necessary to devise a single circuit pattern, and the third factor is the resistance R.
Figure 4 shows an example of a circuit pattern in which the base layer corresponding to resistor R1 is made to meander to increase the ratio of R1/'EL2. This is an example of a circuit pattern in which the ratio of R and /R is increased. Such a structure has less variation between elements and has better accuracy.
上述した定電流回路は温度検出トランジスタ回路と同一
半導体基板に形成することは可能であり、集積化した方
が温度検出器として使い易くなり、汎用性も広がる。The constant current circuit described above can be formed on the same semiconductor substrate as the temperature detection transistor circuit, and integration makes it easier to use as a temperature detector and increases versatility.
第１図は本発明の半導体検出器の回路構成図、第２図は
トランジスタのベースの拡散抵抗を利用した場合のトラ
ンジスタの部分断面模式図、第３図乃至第４図は、ベー
スの拡散抵抗を利用した場合の温度検出トランジスタ回
路のパターン例を示す図、第５因乃至第６図は従来のト
ランジスタを用いた温度検出器及びトランジスタ・エミ
ッタ電圧Ｖｂ、の温度特性図である。
１・・・トラ検出トランジスタ回路
２ａ、２ｂ・・・トランジスタ ３ａ、３ｂ・・・抵抗
４ａ、４ｂ・・・定電流源 ５・・・出力端子６・
・・トランジスタのコレクタ層
７・・・トランジスタのベース層
８・・・コンフタ電極 ９・・・１権１０・・・電
極
１１ａ、ｌｌｂ ＝ベース抵抗（１１ａは３ａ 、 ｌ
ｌｂは３ｂに相当）
１２・・・トランジスタのエミツタ層
１３・・・エミッタ電極
１４ａ、１４ｂ・・・アルミ配線
代理人 弁理士 則 近 憲 佑（ほか１名）第１図
第２図
’ＩＱ−／ｆｂ
第３図
第４図
第５図Fig. 1 is a circuit diagram of the semiconductor detector of the present invention, Fig. 2 is a partial cross-sectional schematic diagram of a transistor using a diffused resistance in the base of the transistor, and Figs. 3 and 4 show the diffused resistance in the base. Figures 5 and 6 are temperature characteristic diagrams of a temperature detector using a conventional transistor and the transistor emitter voltage Vb. 1... Tiger detection transistor circuit 2a, 2b... Transistor 3a, 3b... Resistor 4a, 4b... Constant current source 5... Output terminal 6.
・Collector layer 7 of transistor ・Base layer 8 of transistor ・Converter electrode 9 ・1st power 10 ・Electrode 11a, llb = base resistance (11a is 3a, l
(lb corresponds to 3b) 12... Emitter layer of transistor 13... Emitter electrodes 14a, 14b... Aluminum wiring agent Patent attorney Noriyuki Chika (and 1 other person) Figure 1 Figure 2 'IQ- /fb Figure 3 Figure 4 Figure 5
Claims (3)
て変化する電圧あるいは電位を温度検知出力として検出
し、温度を測定する温度検出器に於いて、温度検出素子
はトランジスタのベース・コレクタ間及びベース・エミ
ッタ間に抵抗が接続された温度検出トランジスタ回路が
同一半導体基板に形成された半導体素子であることを特
徴とする半導体温度検出器。(1) In a temperature sensor that measures temperature by applying a constant current to the temperature detection element and detecting a voltage or potential that changes in proportion to the temperature as the temperature detection output, the temperature detection element is the base of the transistor. - A semiconductor temperature detector characterized in that a temperature detection transistor circuit in which a resistor is connected between the collector and between the base and emitter is a semiconductor element formed on the same semiconductor substrate.
・エミッタ間に接続された抵抗は、トランジスタのベー
スの拡散抵抗であり、ベース・コレクタ間に接続された
抵抗の抵抗値は、ベース・エミッタ間に接続された抵抗
の抵抗値よりも大きいことを特徴とする特許請求の範囲
第１項記載の半導体温度検出器。(2) The resistance connected between the base and collector and between the base and emitter of the transistor is the diffused resistance of the base of the transistor, and the resistance value of the resistance connected between the base and collector is the resistance between the base and emitter. 2. The semiconductor temperature sensor according to claim 1, wherein the resistance value of the semiconductor temperature sensor is greater than the resistance value of the connected resistor.
検出トランジスタ回路と同一の半導体基板に形成されて
いることを特徴とする特許請求の範囲第１項記載の半導
体温度検出器。(3) The semiconductor temperature detector according to claim 1, wherein the constant current circuit that flows a constant current to the temperature detection element is formed on the same semiconductor substrate as the temperature detection transistor circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22292184A JPS61102529A (en) | 1984-10-25 | 1984-10-25 | Semiconductor temperature detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22292184A JPS61102529A (en) | 1984-10-25 | 1984-10-25 | Semiconductor temperature detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61102529A true JPS61102529A (en) | 1986-05-21 |
Family
ID=16789947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22292184A Pending JPS61102529A (en) | 1984-10-25 | 1984-10-25 | Semiconductor temperature detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61102529A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999014567A1 (en) * | 1997-09-15 | 1999-03-25 | Siemens Aktiengesellschaft | Method and device for determining the charging current of an accumulator |
-
1984
- 1984-10-25 JP JP22292184A patent/JPS61102529A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999014567A1 (en) * | 1997-09-15 | 1999-03-25 | Siemens Aktiengesellschaft | Method and device for determining the charging current of an accumulator |
| US6211656B1 (en) | 1997-09-15 | 2001-04-03 | Siemens Aktiengesellschaft | Method and device for determining the charging current of an accumulator |
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