JPS61100961A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS61100961A JPS61100961A JP59221707A JP22170784A JPS61100961A JP S61100961 A JPS61100961 A JP S61100961A JP 59221707 A JP59221707 A JP 59221707A JP 22170784 A JP22170784 A JP 22170784A JP S61100961 A JPS61100961 A JP S61100961A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- section
- shift register
- solid
- image pickup
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims abstract 2
- 238000003384 imaging method Methods 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 6
- 229920005591 polysilicon Polymers 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000009413 insulation Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明はＣＯＤなどの固体撮像装置に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to a solid-state imaging device such as a COD.
（従来の技術）
電荷結合素子（ＣＯＤ）を用いた固体撮像装置は１．ビ
デオテープレコーダー（ＶＴＲ）の普及とともにビデオ
カメラの撮像装置として大きな期待が寄せられている。(Prior Art) A solid-state imaging device using a charge-coupled device (COD) has 1. With the spread of video tape recorders (VTRs), great expectations are being placed on them as imaging devices for video cameras.
従来のインターライン方式固体撮像装置の１緻索を構成
する断面図を第２図に示す。−において、１はＮ型基板
、２は２層、３はＰ十領域、４はＮ型拡散層、５はＰ領
域、６はＮｕ埋込層、７はポリシリコン電極、８゛けア
ルミ（Ａｊ）シールド、９は絶縁膜である０この固体折
１像装置の動作は次のｖ？、になる０入射光１０の光量
に応じて感光部であるＮ型拡赦＃４に！積された電荷は
、１フイ一ルド期間後の垂直ブランキングの期間中に対
応するポリシリコン電極７で形成される垂直シフトレジ
スタへ転送され、その後は水平ラインごとに水平シフト
レジスタに転送され読み出される。FIG. 2 shows a cross-sectional view of one section of a conventional interline solid-state imaging device. -, 1 is an N-type substrate, 2 is a double layer, 3 is a P region, 4 is an N-type diffusion layer, 5 is a P region, 6 is a Nu buried layer, 7 is a polysilicon electrode, 8゛ aluminum ( Aj) Shield, 9 is an insulating film 0 The operation of this solid state folding 1 imager is as follows v? , becomes 0 depending on the light intensity of the incident light 10 to the N type amplification #4 which is the photosensitive part! The accumulated charges are transferred to the vertical shift register formed by the corresponding polysilicon electrode 7 during the vertical blanking period after one field period, and then transferred to the horizontal shift register for each horizontal line and read out. It will be done.
この固体撮像装置の性能を決める４１′ｒ性として、ａ
！ｉ１度、スミア−がある。この従来の固体撮像装置に
おいては、Ｓｉへなどの絶縁膜９をＣＶＤなどＫよシ形
成するが、その加工工程におけるその表面の絶縁膜９は
一回だけの処理で形成されるため。As the 41'r characteristic that determines the performance of this solid-state imaging device, a
! There is a smear once. In this conventional solid-state imaging device, the insulating film 9 on Si is formed using K, such as CVD, but the insulating film 9 on the surface of the Si is formed in only one process.
感光部の個所で低く、垂直シフトレジスタの（ｃＪｌｆ
ｆｉでは高くなっている。そのためポリシリコン箆極７
の端においては丸くなっており、その部分に入射し１ｔ
、光はその部分においては地縁１真９がレンズの様に作
用し、Ｐ−１１１８１に入射光ｌＯが畑り込んでしまう
。The vertical shift register (cJlf
It is higher in fi. Therefore, polysilicon
is rounded at the end, and when it enters that part, 1t
In that part, the ground edge 1 and 9 act like a lens, and the incident light 10 enters P-11181.
従って、本来感光部に蓄積されるべき電荷が琺直シフト
レジスタに槻れ込む妙になるため、感光部ではイ５号′
鷹向が減少し、垂直７フトレジスタではスミア−成分が
増加する事になシ、画質の劣化を起こす要因になる。こ
の様ンζ固体撮像装置の表面の凹凸は特性劣化につなが
る欠点を持っている◇（発明の目的）
本発明の目的は、このよ）な欠点会除去し、＃Ａ憾の歪
をなくし特性改善を計った固体撮像装置を提供する事に
ある。Therefore, the charges that should normally be accumulated in the photosensitive section end up leaking into the direct shift register, so the photosensitive section
The vertical direction decreases, and the smear component increases in the vertical 7-foot register, which causes deterioration in image quality. The irregularities on the surface of the solid-state imaging device have a drawback that leads to deterioration of the characteristics. (Objective of the Invention) The object of the present invention is to eliminate such defects and eliminate the distortion of the characteristics. The purpose of the present invention is to provide an improved solid-state imaging device.
（発明の構成）
本発明の構成は、苧４＄４番板の一生面に１俵数の感光
部と、これら感光部に蓄積された電荷を転送するシフト
レジスタと、これら感光部とシフトレジスタとの表面を
うう杷碌僕とを備えた一体撮像装＠において、前記表面
の絶縁膜を千〜に形成したことを特徴とする。(Structure of the Invention) The structure of the present invention includes one bale of photosensitive parts on the entire surface of the No. 4 board, a shift register that transfers the charges accumulated in these photosensitive parts, and a shift register between these photosensitive parts and the shift register. The integrated imaging device is characterized in that an insulating film on the surface is formed in a thickness of 1,000 to 1,000.
（実施例）
第１図は本発明の一実施例のＩｌｒ面図を示す０本実施
例では図に示す様に、感光部の垂直シフトレジスタ部で
の絶縁膜９の段差をなくす様にしたものである。この絶
縁１１９を平滑に形成するには、８ｉ０雪などの絶縁膜
９を何回も形成したり、また凸部を逆にマスクして絶縁
膜を形成する方法がある。このような構成によれば、平
担な絶縁膜となるのでポリシリコン電極７の端で起きて
いた絶縁膜１による入射光１０のレンズの効果は無くな
る事になシ、垂直シフトレジスタへ流れ込む電荷が減少
し、感光部に蓄積される電荷は増加する事になる。(Embodiment) FIG. 1 shows an Ilr plane view of an embodiment of the present invention. In this embodiment, as shown in the figure, the step of the insulating film 9 in the vertical shift register section of the photosensitive section is eliminated. It is something. In order to form the insulation 119 smoothly, there is a method of forming the insulation film 9 of 8i0 snow or the like many times, or of forming the insulation film by masking the convex portions. According to this configuration, since the insulating film is flat, the lensing effect of the insulating film 1 on the incident light 10 that occurred at the edge of the polysilicon electrode 7 is eliminated, and the charges flowing into the vertical shift register are eliminated. decreases, and the charge accumulated in the photosensitive area increases.
（発明の効果）
以上説明した様に１本発明を用いれは、固体撮像装置の
特性改善が計られ撮像画質の向上が期待出来る。又、表
面の絶ＩｌｉｋＩｇｌ［を平らＫしておく事によって、
別に製造した色フィルタを一体化してカラー信号を得る
様にした固体撮像装置においても、色フィルタを接着剤
で一体化する時に問題になる気泡についてもその発振の
減少が期待出来る。(Effects of the Invention) As explained above, by using the present invention, the characteristics of a solid-state imaging device can be improved and the quality of captured images can be expected to be improved. Also, by flattening the surface,
Even in solid-state imaging devices in which color signals are obtained by integrating color filters manufactured separately, it is expected that oscillations of bubbles, which are a problem when color filters are integrated with adhesive, will be reduced.
第１図は本発明の一実施例の断面図、第２図は従来のイ
イターライイ方式の固体撮像装置の１絵素を構成する断
面図である。図におい千。
１・・・・・・Ｎ型基板、２・・・・・Ｐ層、３・・・
・・・Ｐ中領域、４・・・・・・Ｎ泣拡散層、５・・・
・・Ｐ領域、６・・・・・Ｎ屋埋込層、７・・・・・・
ポリシリコン電極、８・団・ＡＩシールド、９・・・・
・・絶嫌模、１０・・・・・・入射光。
秦 ｔ ＠
第 ２ 図FIG. 1 is a cross-sectional view of one embodiment of the present invention, and FIG. 2 is a cross-sectional view of one pixel of a conventional solid-state imaging device of the Italai system. Figure smell thousand. 1...N-type substrate, 2...P layer, 3...
... P middle region, 4 ... N diffusion layer, 5 ...
...P area, 6...Nya embedded layer, 7...
Polysilicon electrode, 8, group, AI shield, 9...
...Absolutely impossible, 10...Incoming light. Qin t @ Figure 2
Claims (1)
部に蓄積された電荷を転送するシフトレジスタと、これ
ら感光部とシフトレジスタとの表面を覆う絶縁膜とを備
えた固体撮像装置において、前記絶縁膜の表面を平滑に
した事を特徴とする固体撮像装置。In a solid-state imaging device that includes, on one main surface of a semiconductor substrate, a plurality of photosensitive sections, a shift register that transfers charges accumulated in these photosensitive sections, and an insulating film that covers the surfaces of these photosensitive sections and the shift register. , A solid-state imaging device characterized in that the surface of the insulating film is smooth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59221707A JPS61100961A (en) | 1984-10-22 | 1984-10-22 | Solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59221707A JPS61100961A (en) | 1984-10-22 | 1984-10-22 | Solid-state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61100961A true JPS61100961A (en) | 1986-05-19 |
Family
ID=16771011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59221707A Pending JPS61100961A (en) | 1984-10-22 | 1984-10-22 | Solid-state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61100961A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5519240A (en) * | 1993-02-26 | 1996-05-21 | Nec Corporation | Microshutter horizontally movable by electrostatic repulsion |
-
1984
- 1984-10-22 JP JP59221707A patent/JPS61100961A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5519240A (en) * | 1993-02-26 | 1996-05-21 | Nec Corporation | Microshutter horizontally movable by electrostatic repulsion |
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