JPS6094726A - Processing method for translucent conductive film - Google Patents
Processing method for translucent conductive filmInfo
- Publication number
- JPS6094726A JPS6094726A JP20199683A JP20199683A JPS6094726A JP S6094726 A JPS6094726 A JP S6094726A JP 20199683 A JP20199683 A JP 20199683A JP 20199683 A JP20199683 A JP 20199683A JP S6094726 A JPS6094726 A JP S6094726A
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- film
- thin film
- laser beam
- ctf
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Abstract
Description
【発明の詳細な説明】
（１）
この発明は、透光性導電膜（以下ＣＴＦという）を透光
性有機樹脂薄膜（以下ＯＦという）上に形成させた被加
工物にパルスレーザ光を照射して開溝を形成することを
目的とする。Detailed Description of the Invention (1) This invention involves irradiating a workpiece with pulsed laser light on which a transparent conductive film (hereinafter referred to as CTF) is formed on a transparent organic resin thin film (hereinafter referred to as OF). The purpose is to form an open groove.
この発明は、連続使用上限温度が１５０〜３ｏｏ℃にお
いて使用可能な透光性ＯＦ上に形成された酸化インジュ
ームまたは酸化スズを主成分とするＣＴＦに対し、先端
温度が１５００〜２２０（１”ｃのパルス状のレーザ光
を照射して走査加工し、ＯＦ上のＣＴＦのみを選択的に
除去し、開溝を形成することを目的とする。This invention provides a CTF with a tip temperature of 1500 to 220 (1" The purpose of the present invention is to selectively remove only the CTF on the OF by irradiating a pulsed laser beam of c to perform scanning processing, thereby forming an open groove.
従来、レーザ光を用いてＣＴＦを除去し開溝に形成する
方法では、基板にガラス板、セラミック板等の耐熱性の
基板が用いられてきた。これらはレーザ光の高温に対し
耐えられる基板であるが、価格が高価であり、破損しや
すいという欠点を有していた。Conventionally, in the method of removing CTF and forming an open groove using a laser beam, a heat-resistant substrate such as a glass plate or a ceramic plate has been used as the substrate. Although these substrates can withstand the high temperatures of laser light, they have the drawbacks of being expensive and easily damaged.
しかし、ディスプレー装置等への応用を考えた時、この
基板として可曲性の有機薄膜の使用がめられてきた。本
発明はこのＯＦ上のＣＴＦに対して（２）
レーザ光を照射した時、このＯＦを損傷せずにＣＴＦを
除去することができる条件のあることを実験的に検討し
たところ、そのレーザ光を１つの場所に長時間（数十ｍ
秒以上）照射することなく、また走査（スキャン）スピ
ードを適切化することによりＣＴＦのみを選択的に除去
することが可能であることを見いだした。However, when considering application to display devices, etc., it has been recommended to use flexible organic thin films as the substrate. The present invention is directed to (2) the CTFs on the OF after experimentally examining the existence of conditions under which the CTFs can be removed without damaging the OF when irradiated with a laser beam. in one place for a long time (several tens of meters)
It has been found that it is possible to selectively remove only CTF by optimizing the scanning speed and without irradiation (longer than 2 seconds).
即ち、レーザ光の照射によりＯＦは熱伝導率が小さい（
一般には１〜７×１０′４Ｃａ１／ｓｅｃ／ｃＴ１／℃
／ｃｍ）ため、同じ位置に繰り返しレーザパルスを加え
ると、この有機樹脂は劣化し炭化して切断されてしまう
。しかしその繰り返しを１回または数回とすると、この
ＯＦの熱伝導率がＣＴＦの１ ／１０’であるため、逆
にＣＴＦのみを選択的にレーザ光の照射された場所のみ
除去することができることを見いだした。In other words, the OF has a low thermal conductivity due to laser light irradiation (
Generally 1~7×10'4Ca1/sec/cT1/℃
/cm), so if laser pulses are repeatedly applied to the same position, this organic resin will deteriorate, carbonize, and be cut. However, if this process is repeated once or several times, the thermal conductivity of this OF is 1/10' of that of the CTF, so it is possible to selectively remove only the CTF from the area irradiated with the laser beam. I found it.
以下にその実施例を図面に従って記す。Examples thereof will be described below according to the drawings.
ＯＦとして例えば住友ベークライト製スミライトｐｓ−
１３００を用いた。このＯＦは、連続使用上限温度１８
０℃、熱伝導率４．３ Ｘ １０ ′４Ｃａｌ ／ ｓ
ｅｃ ／ ｃｄ ／ ”Ｃ（３）
／ｃＩＩ＋、光線透光率８６．３％（１００μの厚さと
する）。For example, Sumitomo Bakelite's Sumilite ps-
1300 was used. This OF has a continuous use upper limit temperature of 18
0℃, thermal conductivity 4.3 x 10'4Cal/s
ec/cd/”C(3)/cII+, light transmittance 86.3% (assuming a thickness of 100μ).
表面抵抗率５．４ Ｘ１０１４Ω、体積抵抗率１．７
Ｘｌ０Ｉ”ΩｃＩ１１をその代表例として有する。Surface resistivity 5.4 x 1014Ω, volume resistivity 1.7
A representative example thereof is Xl0I''ΩcI11.
このＯＦ上にスパッタ法にてＩＴＯを７００ 人の厚さ
に形成させた。するとそのシート抵抗は２００Ω／口を
有していた。ITO was formed on this OF to a thickness of 700 mm by sputtering. Its sheet resistance then had 200Ω/hole.
第１図はこの０Ｆ（１）上のｃｒｐ （２）に対しプロ
ーブ（３）、＜ ４ ）、テスタ（５）の２端子法にて
その抵抗を測定した。In FIG. 1, the resistance of crp (2) on this 0F (1) was measured using a two-terminal method using a probe (3), <4) and a tester (5).
さらにここにＹＡＧレーザ（発光波長１．０６μ、焦点
距離５抛ｍ、光径５０μ）を照射した。その条件として
、繰り返し同時に６ＫＩｌｚ、平均出力１．３Ｗ、スキ
ャンスピード（走査速度、以下ＳＳという） ６０ｃｍ
／分とした。すると第１図に示すごとき開溝（１０）。Furthermore, this was irradiated with a YAG laser (emission wavelength 1.06 μm, focal length 5 m, light diameter 50 μm). The conditions are: 6 KIlz at the same time repeatedly, average output 1.3 W, scan speed (hereinafter referred to as SS) 60 cm.
/ minute. Then, an open groove (10) as shown in FIG. 1 is formed.
（１０’）を得ることができた。(10') could be obtained.
この時電子顕微鏡にて調べたが、ＯＦ裏表面何等の損傷
もまた部分的な劣化も見られなかった。このレーザ光は
１６００℃以上の温度を有すると推察されるが、連続使
用上限温度が１８０℃程度の低い耐熱性しか有さないＯ
Ｆに何等損傷を与えなかった。At this time, the back surface of the OF was examined using an electron microscope, and no damage or partial deterioration was observed on the back surface of the OF. It is estimated that this laser beam has a temperature of 1600℃ or higher, but O
No damage was caused to F.
（４）
即ち、叶−トのＣＴＦに対し、選択的に開溝（１０）、
（１０’）を作製することができることがわかった。(4) That is, selectively opening the groove (10) with respect to the CTF of the leaf plate,
It was found that (10') can be produced.
その」−１２つのプローブ間にはＩＭΩ以上の抵抗（巾
は１０Ｉ１１とする）を得ることができた。It was possible to obtain a resistance of IMΩ or more (the width is 10I11) between the 12 probes.
第２図はレーザ光の繰り返し周波数を可変にしたもので
、開溝が形成される場合の電気抵抗を示す。FIG. 2 shows the electrical resistance when the repetition frequency of the laser beam is varied and an open groove is formed.
図面において、ＳＳ ６０ｃ＋ａ／分の平均出力０．８
Ｗ。In the drawing, average output of SS 60c+a/min 0.8
W.
光径５０μのＹＡＧ レーデを用いた。するとその周波
数を１０Ｊｌｚより下げてゆくと曲線（９）は７ＫＨｚ
以下で不連続にＩＭΩ以上となって電気的にアイソレイ
シジンを行うことができるようになったことが判明した
。A YAG radar with a light diameter of 50 μm was used. Then, when the frequency is lowered from 10 Jlz, the curve (9) becomes 7 KHz.
It was found that the resistance became discontinuously higher than IMΩ and electrical isolation became possible.
しかしこの周波数が４Ｋｌｌｚ以下ではこのＣＴＦに加
えて下地のＯＦをもその中心部（ガウス分布のエネルギ
密度の最も高い領域）で損傷してしまった。However, when this frequency was 4 Kllz or less, in addition to this CTF, the underlying OF was also damaged at its center (the region where the energy density of the Gaussian distribution was highest).
このことにより、ＯＦ上のＣＴＦのＬＳ （レーザスク
ライブ）には（１１）に示す範囲が適していた。As a result, the range shown in (11) was suitable for LS (laser scribing) of CTF on the OF.
さらに、この下地のＯＦに損傷を与えることなくＣＴＦ
のみを除去する範囲を調べたところ、第３図（５）
を得た。Furthermore, CTF can be applied without damaging the underlying OF.
When we investigated the range in which only 100% of the 100% carbon dioxide was removed, we obtained Figure 3 (5).
即ち、ＳＳを０〜１５０ｃｍ ／分、平均出力０〜３Ｗ
、繰り返し周波数６ＫＨ２、焦点距離５０ｃｍ、レーザ
光の直径５０μのＹＡＧ レーザとすると、領域１５即
ち点＾。That is, SS 0~150cm/min, average output 0~3W
, a YAG laser with a repetition frequency of 6KH2, a focal length of 50cm, and a laser beam diameter of 50μ, the region 15, or point^.
Ｂ、 Ｃ，Ｄ、 Ｅ、 Ｆで囲まれる範囲はＯＦの損傷
がなく ＣＴＰのみで除去することができた。The area surrounded by B, C, D, E, and F had no damage to the OF and could be removed only by CTP.
さらに領域（１３）はＣＴＦすらも除去することができ
ない領域であり、領域（１２）はパルス光がＣＴＦ上で
連続せず、破線のごとく不連続な大溝を得たのみであっ
た。領域（１４）はＣＴＦのみならず下地のＯＦに対し
ても損傷を与えてしまった領域であった。Further, in region (13), even the CTF could not be removed, and in region (12), the pulsed light was not continuous on the CTF, and only a discontinuous large groove was obtained as shown by the broken line. Area (14) was an area where damage was caused not only to the CTF but also to the underlying OF.
このことにより下地のＯＦに対して損傷を与えることな
く 、ＣＴＦのみを選択的に開溝として除去す返し周波
数を１５ＫＨｚとした場合である。この場合はＣＴＦの
みを選択的にＬＳを行う領域は（１５）より（１６）に
移動している。As a result, only the CTF was selectively removed as an open groove without damaging the underlying OF, and the repetition frequency was set to 15 KHz. In this case, the area where LS is performed selectively on only the CTF has moved from (15) to (16).
またＣＴＦの厚さを１０００人よりも厚く （１μ以下
）（６）
すると、この領域は縦方向に移動した。また下地のＯＦ
を他のｏｐ例えばスミライトＦＳ−１１００（ＩＩＬ温
度インデックス ２４０℃）等のより耐熱性とするとこ
の最適類Ｊ１３７（１５）も大きく拡げることができた
。Furthermore, when the thickness of the CTF was made thicker than 1000 people (less than 1 μm) (6), this region shifted in the vertical direction. Also, the OF of the base
By making it more heat resistant than other ops, such as Sumilite FS-1100 (IIL temperature index 240° C.), this optimal class J137 (15) could be greatly expanded.
ＣＴＰを１μ以上とすると、この領域（１５）が狭くな
り、実用性がない。If the CTP is 1 μ or more, this region (15) becomes narrow and is not practical.
これらのことより、実用的にはＯＦが１５０〜３００℃
またはそれ以上の連続使用の可能な耐熱性の透光性有機
薄膜であることが好ましい。またＣＴＦは３００人〜１
μの範囲であることが好ましい。即ち３００Å以下では
導電膜が十分でなく、１μ以上は下地を損傷セずにＣＴ
Ｆのみを除去することが実質的に不可能であった。From these facts, practically the OF is 150 to 300℃.
It is preferable that the film be a heat-resistant, light-transmitting organic thin film that can be used continuously for a period of 20 to 30 minutes or more. Also, CTF is 300 people to 1
It is preferably in the range of μ. In other words, if the conductive film is less than 300 Å, the conductive film is not sufficient, and if it is more than 1 μm, CT can be performed without damaging the underlying layer.
It was virtually impossible to remove only F.
もちろん、このＣＴＦはミクロに平面状であっても針状
（テクスチャー）をしていても、またＩＴＯ（＃化スズ
が１０重量％以下添加された酸化インジューム）上に酸
化スズが１００〜５００人の厚さに形成された２層膜を
用いてもよいことはいうまでも（７）
（水で１０〜１００倍に希釈）またはアセトン、水、そ
の他の洗浄溶液にこの処理薄膜を浸漬し、超音波洗浄を
して付着物を除去することは有効である。Of course, this CTF may be microscopically planar or acicular (textured), and may contain 100-500% of tin oxide on ITO (indium oxide containing 10% by weight or less of tin oxide). It goes without saying that a two-layer membrane formed to a human thickness may be used (7) (diluted 10 to 100 times with water) or by immersing the treated thin membrane in acetone, water, or other cleaning solution. It is effective to remove deposits by ultrasonic cleaning.
以上の説明より明らかなごとく、本発明はＯＦ上のＣＴ
Ｆに対し、レーザ光を照射してそのＣＴＦのみに開溝を
形成して除去することが可能になった。As is clear from the above explanation, the present invention is applicable to CT on OF.
It has become possible to remove F by irradiating it with a laser beam and forming an open groove only in the CTF.
さらにこのＣＴＦに形成された開溝は線ではなくレーザ
光または下地にＸＹ方向に移動し種々の形状を作製する
ことができる。しかし、その際、レーザ光が同一点を何
度（１０回以上）も照射するとこの領域での温度が上昇
し、下地を損傷させてしまうため作動には注意を要する
。Furthermore, the open grooves formed in this CTF are not lines, but can be moved in the X and Y directions using laser light or on the substrate to produce various shapes. However, in this case, if the same point is irradiated with the laser beam many times (10 times or more), the temperature in this area will rise and the underlying layer will be damaged, so care must be taken during operation.
このようなバターニングを行うことにより、表示用ディ
スプレーへの応用が可能となった。By performing such buttering, it has become possible to apply it to displays.
第１図は有機薄膜上の透光性導電膜に開溝を形成した図
面である。
第２図はレーザ光の繰り返し周波数と開溝の形成条件と
の関係を示す。
第３図はレーザ光のスキャンスピードおよび平（８）
均出力との関係を示す。
特許出願人
草１■
くり′！＋１Ｌ（用Ｓ丸老（（ＫＨｉ）／ｊ 、ｌｒ−
，１FIG. 1 is a drawing in which grooves are formed in a transparent conductive film on an organic thin film. FIG. 2 shows the relationship between the repetition frequency of the laser beam and the conditions for forming the open grooves. FIG. 3 shows the relationship between the scanning speed of the laser beam and the average (8) average output. Patent applicant grass 1■ Chestnut'! +1L (for S Maruo ((KHi)/j, lr-
,1
Claims (1)
ンジュ−ムまたは酸化スズを主成分とする透光性導電膜
を形成し、前記導電膜にパルスレーザ光の走査加工によ
り開溝を形成することを特徴とする透光性導電膜の加工
方法。 ２、特許請求の範囲第１項において、レーザ光は有機樹
脂薄膜を損傷しない程度のスキャンスピードおよび平均
出力を有し、かつ透光性導電膜を連続的に切断する程度
の平均出力、繰り返し周波数およびスキャンスピードを
有することを特徴とする透光性導電膜の加工方法。 ３、特許請求の範囲第１項において、レーザ光を照射し
た後、洗浄することにより開溝またはその近傍の残存物
を除去することを特徴とする透光性導電膜の加工方法。[Claims] 1. A light-transmitting conductive film containing indium oxide or tin oxide as a main component is formed on an organic resin thin film having a light-transmitting insulating surface, and a pulsed laser beam is applied to the conductive film. A method for processing a translucent conductive film, characterized by forming an open groove by scanning processing. 2. In claim 1, the laser beam has a scanning speed and average output that does not damage the organic resin thin film, and has an average output and repetition frequency that is sufficient to continuously cut the transparent conductive film. and a scanning speed. 3. A method of processing a transparent conductive film according to claim 1, which comprises removing residues in or near the open grooves by cleaning after irradiating the laser beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58201996A JPH0712031B2 (en) | 1983-10-27 | 1983-10-27 | Processing method of translucent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58201996A JPH0712031B2 (en) | 1983-10-27 | 1983-10-27 | Processing method of translucent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6094726A true JPS6094726A (en) | 1985-05-27 |
| JPH0712031B2 JPH0712031B2 (en) | 1995-02-08 |
Family
ID=16450207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58201996A Expired - Lifetime JPH0712031B2 (en) | 1983-10-27 | 1983-10-27 | Processing method of translucent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0712031B2 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5712568A (en) * | 1980-06-02 | 1982-01-22 | Rca Corp | Method of producing solar battery |
| JPS5753986A (en) * | 1980-07-25 | 1982-03-31 | Eastman Kodak Co | |
| JPS5788733A (en) * | 1980-09-22 | 1982-06-02 | Texas Instruments Inc | Method of forming pattern by sublimation |
| JPS57176778A (en) * | 1981-03-31 | 1982-10-30 | Rca Corp | Solar battery array |
-
1983
- 1983-10-27 JP JP58201996A patent/JPH0712031B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5712568A (en) * | 1980-06-02 | 1982-01-22 | Rca Corp | Method of producing solar battery |
| JPS5753986A (en) * | 1980-07-25 | 1982-03-31 | Eastman Kodak Co | |
| JPS5788733A (en) * | 1980-09-22 | 1982-06-02 | Texas Instruments Inc | Method of forming pattern by sublimation |
| JPS57176778A (en) * | 1981-03-31 | 1982-10-30 | Rca Corp | Solar battery array |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0712031B2 (en) | 1995-02-08 |
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