JPS6090813A - Manufacture of jadeite crystal - Google Patents

Manufacture of jadeite crystal

Info

Publication number
JPS6090813A
JPS6090813A JP19585983A JP19585983A JPS6090813A JP S6090813 A JPS6090813 A JP S6090813A JP 19585983 A JP19585983 A JP 19585983A JP 19585983 A JP19585983 A JP 19585983A JP S6090813 A JPS6090813 A JP S6090813A
Authority
JP
Japan
Prior art keywords
jadeite
starting material
gas
crystals
plasma spraying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19585983A
Other languages
Japanese (ja)
Inventor
Masatoshi Saito
正敏 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP19585983A priority Critical patent/JPS6090813A/en
Publication of JPS6090813A publication Critical patent/JPS6090813A/en
Pending legal-status Critical Current

Links

Landscapes

  • Silicates, Zeolites, And Molecular Sieves (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To manufacture inexpensively jadeite crystals with high productivity by mixing components in such a molar ratio as to provide a composition represented by a formula NaAlSi2O6 and by carrying out plasma spraying. CONSTITUTION:A gas such as Ar or He is introduced into a sprayer from the gas introducing inlet 4, and it is excited in an electric field generated by the cathode 2 and the anode 3. A starting material is prepd. by blending 0.8-1.2mol Na with 0.8-1.2mol Al, 1.8-2.4mol Si and 5-7mol O2 so as to provide a composition represented by a formula NaAlSi2O6, and 0.01-0.1mol Fe2O3 or Cr2O3 is added to the starting material. They are well mixed, and the resulting powdery starting material is fed to the sprayer from the starting material introducing inlet 5. The fed material is sprayed on a sapphire substrate 7 heated to 300-1,000 deg.C by means of plasma 6 of the introduced gas. A jadeite crystal film 8 is inexpensively formed on the surface of the substrate 7 by plasma spraying with high productivity.

Description

【発明の詳細な説明】 （技術分野） 氷見ＢＡは、ジェイダイト結晶製造法に係ル、プラズマ
溶射により、効率よくジェイダイト結晶を生じせしめる
方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) Himi BA relates to a method for producing jadeite crystals, and relates to a method for efficiently producing jadeite crystals by plasma spraying.

（従来技術〕 従来は、ホットプレス、ＨＩＰなＥＩＩＣより、ジエイ
ダイトで形成する方法があるが、これらは膨大な設備投
資を必要とし、半透光性を得る為に’Ｘ）時間以上高温
高圧にする必要があシ、生産性及びコストの点で問題が
あった。(Prior art) Conventionally, there is a method of forming with diadite using hot press or HIP EIIC, but these require a huge investment in equipment and require high temperature and high pressure for more than 'X) hours in order to obtain semi-transparent properties. However, there were problems in terms of productivity and cost.

Ｃ本発明の目的） 本発明の目的は、上記の問題点を除去し、安価で生産性
の高いジエイダイト結晶製造法を提供することにある。C) An object of the present invention is to eliminate the above-mentioned problems and provide an inexpensive and highly productive method for producing dieidite crystals.

（発明の要約） 本発明は、各成分のモル比がＮ（ｚＡｌｌ、８　ｉ　！
　Ｏｓとなる様に調整した原料をプラズマ溶射によ〕ジ
ェイダイト結晶を単時間に得ることが出来る様にしたも
のである。(Summary of the Invention) In the present invention, the molar ratio of each component is N(zAll, 8 i!
Jadeite crystals can be obtained in a short time by plasma spraying raw materials adjusted to form Os.

以下図面を参照にしながら本発明に基づ〈実施例を詳し
く説明する。Embodiments based on the present invention will be described in detail below with reference to the drawings.

実施例１ 第１図にプラズマ溶射の原理図を示す、ｌは電源、２は
陰極、３は陽様、４はガス導入口、５は原料導入口、６
はプラズマ、７は母材、８は溶射膜である。原理は、ガ
ス導入口から入れたガス（例えばアルゴン、ヘリウム等
）を電場により励起させ、そのエネルギーを利用して原
料粉を溶融させる。モル比が’７１（Ｉｋ、１３Ｂ　６
２０　ｇとなる様にＨａ　、　ＡＪ　。Example 1 Figure 1 shows a diagram of the principle of plasma spraying, where l is the power source, 2 is the cathode, 3 is the positive side, 4 is the gas inlet, 5 is the raw material inlet, and 6
7 is a plasma, 7 is a base material, and 8 is a sprayed film. The principle is to excite gas (for example, argon, helium, etc.) introduced through the gas inlet by an electric field, and use that energy to melt the raw material powder. The molar ratio is '71 (Ik, 13B 6
Ha, AJ so that it weighs 20 g.

ｓ７．ｏを調整した原料に、’Ｐｇ、０３を０．１　ｗ
ｔ％添加する。これをよく混合し、５かも導入する。使
用ガスはアルゴンとする。成膜速度は、０．５〜ｈａ／
ｈｒとし、プラズマを発生させ、原料粉を母材に溶射す
る。母材には、サファイヤを用いた。母材は３００〜１
０００℃に加熱しておく。溶射を１０時間続け、厚さが
５〜ｌ（ｌ　ＩＬＩＩ　％径が３００６０　ｍのジエイ
ダイト結晶が得られた。。s7. Add 0.1 w of 'Pg, 03 to the raw material with adjusted o.
Add t%. Mix this well and add 5. The gas used is argon. The film formation rate is 0.5~ha/
hr, generate plasma, and spray the raw material powder onto the base material. Sapphire was used as the base material. Base material is 300-1
Heat to 000℃. Spraying was continued for 10 hours, and diadite crystals with a thickness of 5 to 1 (l ILII %) and a diameter of 30,060 m were obtained.

実施例２ 実施例１と同様にしてガスはアルゴンガスに酸素ガスを
５〜ｌ（ｌチ混合したものを用いてプラズマ溶射した。Example 2 Plasma spraying was performed in the same manner as in Example 1 using a mixture of argon gas and oxygen gas of 5 to 1 (liters).

その結果、透光性の高込ジエイダイト結晶が得られた。As a result, a highly transparent translucent diadite crystal was obtained.

実施例３ 実施例Ｊと同様の原料に酸化チタン（Ｔｉｅｓ）を０．
１　ｗｔｅｌＡ更に添加し、プラズマ溶射する。得られ
た結晶は、青みがかったジエイダイト結晶であつた。厚
さは１０　ｍ　、径は５０藺である。Example 3 Titanium oxide (Ties) was added to the same raw material as in Example J by adding 0.0% titanium oxide (Ties).
Further add 1 wtelA and perform plasma spraying. The obtained crystals were bluish diadite crystals. The thickness is 10 m and the diameter is 50 m.

（発明の効果） 本発明は、実施例でみる様に生産性が高く、従来よりも
数百倍の効率でジエイダイト結晶を製造できる。(Effects of the Invention) As seen in the examples, the present invention has high productivity, and can produce diadite crystals with an efficiency several hundred times higher than that of the conventional method.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、プラズマ溶射の原理図を示したもので１は電
源、２は陰極、３は陽極、４はガス導入口、５は原料導
入口、６はプラズマ、７は母材、８は溶射膜である。 以　上 出願人　株式会社諏訪精工舎 代理人　弁理士部　上　務Figure 1 shows the principle of plasma spraying. 1 is a power source, 2 is a cathode, 3 is an anode, 4 is a gas inlet, 5 is a raw material inlet, 6 is plasma, 7 is a base material, and 8 is a It is a thermal sprayed film. Applicant Suwa Seikosha Co., Ltd. Agent Patent Attorney Department Senior Manager

Claims (1)

【特許請求の範囲】[Claims] ナトリウム成分（Ｈα）が０．８〜１．２モル、アルミ
ニウム成分（１＃）が０．８〜】、２モル、シリコン（
Ｂｉ）が１．８〜２．１　％ル、　酸素成分（０）が５
〜７モル、鉄成分（Ｆ、）又はクロム成分（Ｃｒ）が０
．０１〜０．１モル含む原料粉をプラズマにより溶解し
、溶射することを特徴とするジェイダイト結晶製造法。Sodium component (Hα) is 0.8-1.2 mol, aluminum component (1#) is 0.8-], 2 mol, silicon (
Bi) is 1.8 to 2.1%, and oxygen component (0) is 5
~7 mol, iron component (F, ) or chromium component (Cr) is 0
．． A method for producing jadeite crystals, characterized in that raw material powder containing 0.01 to 0.1 mol is melted by plasma and thermally sprayed.
JP19585983A 1983-10-19 1983-10-19 Manufacture of jadeite crystal Pending JPS6090813A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19585983A JPS6090813A (en) 1983-10-19 1983-10-19 Manufacture of jadeite crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19585983A JPS6090813A (en) 1983-10-19 1983-10-19 Manufacture of jadeite crystal

Publications (1)

Publication Number Publication Date
JPS6090813A true JPS6090813A (en) 1985-05-22

Family

ID=16348176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19585983A Pending JPS6090813A (en) 1983-10-19 1983-10-19 Manufacture of jadeite crystal

Country Status (1)

Country Link
JP (1) JPS6090813A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0597587A (en) * 1991-10-01 1993-04-20 Sansha Electric Mfg Co Ltd Method for synthesizing artificial crystal of sapphire
JPH05170596A (en) * 1991-12-20 1993-07-09 Sansha Electric Mfg Co Ltd Synthesizer for sapphire artificial crystal
CN102060515A (en) * 2010-11-17 2011-05-18 昆明理工大学 Process for preparing synthetic jadeite

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0597587A (en) * 1991-10-01 1993-04-20 Sansha Electric Mfg Co Ltd Method for synthesizing artificial crystal of sapphire
JPH05170596A (en) * 1991-12-20 1993-07-09 Sansha Electric Mfg Co Ltd Synthesizer for sapphire artificial crystal
CN102060515A (en) * 2010-11-17 2011-05-18 昆明理工大学 Process for preparing synthetic jadeite

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