JPS6090696A - Pressure-sensitive sensor - Google Patents
Pressure-sensitive sensorInfo
- Publication number
- JPS6090696A JPS6090696A JP19949583A JP19949583A JPS6090696A JP S6090696 A JPS6090696 A JP S6090696A JP 19949583 A JP19949583 A JP 19949583A JP 19949583 A JP19949583 A JP 19949583A JP S6090696 A JPS6090696 A JP S6090696A
- Authority
- JP
- Japan
- Prior art keywords
- pressure
- diaphragm
- pressure sensor
- sensitive sensor
- receiving part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Force Measurement Appropriate To Specific Purposes (AREA)
- Manipulator (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〈発明の技術分野〉
本発明は、ロボット手先部等に設けられる圧覚センサに
関連し、殊に本発明は、把持物体との接触圧を測定し得
る圧覚センサを提供する。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a pressure sensor provided in a robot hand, etc., and in particular, the present invention provides a pressure sensor capable of measuring contact pressure with a gripped object. do.
〈発明の背景〉
従来、ロボット手先部には、感圧導電性ゴムを用いて形
成された圧覚センサが用いられている。ところが感圧導
電性ゴムは、出力特性に直線性がなく、またヒステリシ
ス、クリープ等の現象が顕著であるため、物体のパター
ン認識は可能であるが、接触圧の測定には不向きであっ
た。<Background of the Invention> Conventionally, a pressure sensor formed using pressure-sensitive conductive rubber has been used in a robot hand. However, pressure-sensitive conductive rubber lacks linearity in its output characteristics and exhibits significant phenomena such as hysteresis and creep, so although it is possible to recognize patterns on objects, it is not suitable for measuring contact pressure.
〈発明の目的〉
本発明は、直線性に優れた出力特性を持ち月つヒステリ
シス、クリープ等の現象がきわめて少ないシリコンを用
いることによって、接触圧の測定が可能な圧覚センサを
提供することを目的とする。<Object of the Invention> The object of the present invention is to provide a pressure sensor capable of measuring contact pressure by using silicon, which has output characteristics with excellent linearity and is extremely free from phenomena such as hysteresis and creep. shall be.
〈発明の構成および効果〉
上記目的を達成するため、本発明では、シリコン基板上
に複数のダイヤフラムをマトリクス状に形成すると共に
各ダイヤフラム毎にピエゾ抵抗を形成配備して感圧セン
サを形成し、この感圧センサに対し、各ダイヤフラムに
対応して突出する受圧部を連繋配備することによって、
夫々受圧部に作用する圧力をダイヤフラムを介してピエ
ゾ抵抗により測定することとした。<Configuration and Effects of the Invention> In order to achieve the above object, the present invention forms a pressure-sensitive sensor by forming a plurality of diaphragms in a matrix on a silicon substrate and forming and disposing a piezoresistor for each diaphragm. For this pressure sensor, by connecting and deploying pressure receiving parts that protrude corresponding to each diaphragm,
It was decided to measure the pressure acting on each pressure receiving part using a piezoresistor via a diaphragm.
本発明によれは、シリコンが有する理想的な出力特性を
もって、接触圧の状態を正確に測定できる。加えてダイ
ヤフラムをシリコン基板に形成するから、異方性エツチ
ング等により高精度のダイヤフラムの加工が可能である
と共・に、ピエゾ抵抗の一体形成によりアレイ化、集積
化が容易である等、発明目的を達成した優れた効果を奏
する。According to the present invention, the state of contact pressure can be accurately measured using the ideal output characteristics of silicon. In addition, since the diaphragm is formed on a silicon substrate, it is possible to process the diaphragm with high precision using anisotropic etching, etc., and the integral formation of piezoresistors facilitates arraying and integration. It achieves its purpose and produces excellent results.
〈実施例の説明〉
第1図乃至第3図は本発明にかかる圧覚センサの構成例
を示す。<Description of Embodiments> FIGS. 1 to 3 show configuration examples of a pressure sensor according to the present invention.
図示例の圧覚センサは、感圧センサ1上へスペーサ2を
介して保護板3を重ね、更にその上へシリコンゴムシー
ト4を重合配備して構成される。The illustrated pressure sensor is constructed by stacking a protection plate 3 on top of the pressure sensor 1 via a spacer 2, and further overlaying a silicone rubber sheet 4 thereon.
感圧センサ1は、シリコン単結晶基板10上にボロン拡
散によってピエゾ抵抗11〜14を形成配置すると共に
、アルミニウム等の金属電極15で抵抗間をブリッジ結
線した後、基板損の反対面に異方性エツチングを施こし
て、ダイヤフラム16を形成したものである。この異方
性エツチングには、例えば水酸化カリウムや、ピロカラ
コールとエチレンジアミンとの混合液等のエツチング液
が用いられ、基板10上に複数のダイヤフラム16をマ
トリクス状に同時形成する。各ダイヤフラム16には前
記4個のピエゾ抵抗11〜14が対応配置さね、例えば
ピエゾ抵抗11をダイヤフラム16上、他のピエゾ抵抗
12〜14をダイヤフラム16外に位置させる。The pressure-sensitive sensor 1 has piezoresistors 11 to 14 formed and arranged on a silicon single crystal substrate 10 by boron diffusion, and after bridge-connecting the resistances with a metal electrode 15 such as aluminum, an anisotropic wire is formed on the opposite side of the substrate. The diaphragm 16 is formed by etching. For this anisotropic etching, an etching solution such as potassium hydroxide or a mixed solution of pyrocaracol and ethylenediamine is used, and a plurality of diaphragms 16 are simultaneously formed in a matrix on the substrate 10. The four piezoresistors 11 to 14 are arranged correspondingly to each diaphragm 16, for example, the piezoresistor 11 is placed on the diaphragm 16 and the other piezoresistors 12 to 14 are placed outside the diaphragm 16.
前記スペーサ2および保護板3には、ダイヤフラム16
との対応位置に貫通孔21.3’lが形成され、連続す
る貫通孔21.31内には圧力伝達媒体であるシリコン
オイル5が充填しである。尚スペーサ2には、シリコン
と熱膨張係数の等しい部材を用いることにより、感圧セ
ンサ】の温度特性を向」−できる。A diaphragm 16 is attached to the spacer 2 and the protection plate 3.
A through hole 21.3'l is formed at a position corresponding to the through hole 21.3'l, and the continuous through hole 21.31 is filled with silicone oil 5, which is a pressure transmission medium. By using a material having the same coefficient of thermal expansion as silicon for the spacer 2, the temperature characteristics of the pressure-sensitive sensor can be improved.
また前記シリコンゴムシート4は、ダイヤフラム16と
の対応位置に円板状の受圧部40を一体形成してあり、
夫々受圧部40に作用する圧縮力はシリコンオイル5を
介して感圧センサ1のダイヤフラム16に伝達される。Further, the silicone rubber sheet 4 is integrally formed with a disc-shaped pressure receiving part 40 at a position corresponding to the diaphragm 16.
The compressive force acting on each pressure receiving part 40 is transmitted to the diaphragm 16 of the pressure sensor 1 via the silicone oil 5.
第4図は、前記ピエゾ抵抗間を接続したブリッジ回路、
また第5図は各ブリッジ回路間を接続した全体回路を示
す。第4図中、端子6,60は一定電圧か印加される入
力端子、端子7,70はブリッジ回路の平衡変化を検出
する出力端子である。今ピエヅ抵抗11〜14を共通の
抵抗値kに設定した場合、ダイヤフラム16の圧力変形
によりピエゾ抵抗11の抵抗値Δにだけ増加すると、出
力端子7,70には次式で示す出力′電圧ΔVが現われ
る。FIG. 4 shows a bridge circuit connecting the piezoresistors,
Moreover, FIG. 5 shows the entire circuit in which each bridge circuit is connected. In FIG. 4, terminals 6 and 60 are input terminals to which a constant voltage is applied, and terminals 7 and 70 are output terminals for detecting changes in the balance of the bridge circuit. If the piezo resistors 11 to 14 are set to a common resistance value k, if the pressure deformation of the diaphragm 16 increases the resistance value Δ of the piezo resistor 11, the output terminals 7 and 70 will have an output voltage ΔV expressed by the following equation. appears.
この回路構成例の場合、出力端子70の電位は圧力の作
用有無に関係なく常に一定であるから、第5図に示す全
体回路では共通入力端子61.62の他、出力端子70
を共通化した共通出力端子71を設定して、端子数を減
少できる。かくて共通入力端子61.62に一定電圧■
を印加して、各ブリッジ回路の出力端子7を走査すれば
、各受圧部40に作用する圧力の大きさを電圧変化とし
て測定できる。In this circuit configuration example, the potential of the output terminal 70 is always constant regardless of whether pressure is applied or not, so in the overall circuit shown in FIG.
The number of terminals can be reduced by setting a common output terminal 71 that has a common output terminal. Thus, a constant voltage is applied to the common input terminals 61 and 62■
By applying this and scanning the output terminal 7 of each bridge circuit, the magnitude of the pressure acting on each pressure receiving section 40 can be measured as a voltage change.
第6図は、各ピエゾ抵抗11〜J4をダイヤフラム16
上に位置させた場合におけるブリッジ回路、第7図は各
ブリッジ回路間を接続した全体回路を示す。令弟6図の
入力端子6.60間に定電流■を流し、各ピエゾ抵抗1
1〜14がダイヤフラム16の圧力変形により抵抗値が
Δに増加したとすると、出力端子7.70には次式で示
す出力電圧ΔVか現われる。Figure 6 shows each piezoresistor 11 to J4 connected to a diaphragm 16.
FIG. 7 shows the entire circuit in which the bridge circuits are connected. A constant current ■ is passed between the input terminals 6 and 60 of the younger brother 6, and each piezo resistor 1
If the resistance values of 1 to 14 increase to Δ due to pressure deformation of the diaphragm 16, an output voltage ΔV shown by the following equation appears at the output terminal 7.70.
ΔV : ΔR,I
従って第7図の全体回路において、共通入力端子61.
62間に定電流■を流して、各ブリッジ回路の出力端子
7,70を走査すれば、前記同様、各受圧部40に作用
する圧力の大きさを′「[(圧変化として測定できる。ΔV: ΔR,I Therefore, in the overall circuit of FIG. 7, the common input terminal 61.
62, and scan the output terminals 7, 70 of each bridge circuit, the magnitude of the pressure acting on each pressure receiving part 40 can be measured as a pressure change, as described above.
第8図は本発明にかかる圧覚センサの他の構成例を示す
。図示例の圧覚センサは、感圧センサ1−J=へ重合し
たスペーサ2および保護板3の伺通孔21,31内に、
シリコンゴム製の弾性体41を挿入して、弾性体41を
ダイヤフラム]6」−に位置させると共に、弾性体41
が有する受圧部40を保護板3上へ突出させた構造であ
る。尚図示例の各弾性体41は相互に連結して組立作業
の簡易化をはかつているが、これに限らず、各弾性体4
1を独立させる等の設計使用も可能である。FIG. 8 shows another configuration example of the pressure sensor according to the present invention. The pressure sensor of the illustrated example has spacer 2 superimposed on pressure sensor 1-J= and spacer 2 in through-holes 21, 31 of protection plate 3.
An elastic body 41 made of silicone rubber is inserted, and the elastic body 41 is positioned on the diaphragm]6''-, and the elastic body 41
It has a structure in which the pressure receiving part 40 of the protector plate 3 is projected onto the protection plate 3. Although the elastic bodies 41 in the illustrated example are connected to each other to simplify the assembly work, the present invention is not limited to this.
It is also possible to design and use such as making 1 independent.
然して圧覚センサに物体か押し付けられると、接触する
受圧部40が圧縮力を受ける。この圧縮力はミ第1,2
図の例ではシリコンオイル5を介して、また第8図の例
では弾性体41を介して感圧センサ1の各ダイヤフラム
16に伝達される。これによりダイヤフラム16は圧縮
変形され、ダイヤフラム16」二に位置するピエゾ抵抗
11に応力か州かつて抵抗値の変化をもたらす。そして
この変化をブリッジ回路の出力変化として検出すること
により、各受圧部40の接触圧を把握できる。When an object is pressed against the pressure sensor, the pressure receiving part 40 in contact receives a compressive force. This compressive force is the first and second
It is transmitted to each diaphragm 16 of the pressure-sensitive sensor 1 via the silicone oil 5 in the example shown, and via the elastic body 41 in the example shown in FIG. As a result, the diaphragm 16 is compressed and deformed, and stress is applied to the piezoresistor 11 located on the diaphragm 16, causing a change in resistance value. By detecting this change as an output change of the bridge circuit, the contact pressure of each pressure receiving part 40 can be grasped.
第1図は本発明にかかる圧覚センサの斜面図、第2図は
第1図A−A線に沿う断面図、第3図はダイヤフラム」
二におけるピエゾ抵抗間の接続状態を示す配線説明図、
第4図はピエゾ抵抗のブリッジ結線を示す電気回路図、
第5図はブリッジ回路間を接続した全体回路の電気回路
図、86図は他の実施例を示すブリッジ回路の電気回路
図、第7図は第6図実施例の全体回路の電気回路図、第
8図は圧覚センサの他の構造例を示す断面図である。
1・・・・感圧センサ
10 ・・・シリコン単結晶爪板
11〜14・・・・・ピエゾ抵抗
16・・・・・ダイヤフラム
40・・・・・受圧部
分2 回
分3図
貧4フ
6.7. 址7図Fig. 1 is a perspective view of the pressure sensor according to the present invention, Fig. 2 is a sectional view taken along line A-A in Fig. 1, and Fig. 3 is a diaphragm.
Wiring explanatory diagram showing the connection state between piezoresistors in 2.
Figure 4 is an electrical circuit diagram showing the bridge connection of piezoresistors.
5 is an electrical circuit diagram of the entire circuit connecting bridge circuits, FIG. 86 is an electrical circuit diagram of a bridge circuit showing another embodiment, FIG. 7 is an electrical circuit diagram of the entire circuit of the embodiment shown in FIG. 6, FIG. 8 is a sectional view showing another structural example of the pressure sensor. 1...Pressure sensor 10...Silicon single crystal nail plates 11-14...Piezo resistor 16...Diaphragm 40...Pressure receiving part 2 times 3 Figure 4 Fu 6 .7. Site map 7
Claims (1)
状に形成すると共に各ダイヤフラムの位檻にピエゾ抵抗
を形成配置して感圧センサを形成し、該感圧センサに対
し、各タイヤフラムに対応して突出する受圧部を連繋配
備した圧覚センサ。 ■ ダイヤフラムはシリコン基板に異方性エッチンクを
施こして形成された特許請求の範囲第1項記載の圧覚セ
ンサ。 ■ ピエゾ抵抗はシリコン基板にボロン拡散を施こして
形成された特許請求の範囲第1項記載の圧覚センサ。[Claims] ■ A pressure-sensitive sensor is formed by forming a plurality of diaphragms in a matrix on a silicon substrate, and piezoresistors are formed and arranged in the cage of each diaphragm. A pressure sensor with a pressure receiving part that protrudes in correspondence with the tire flam. (2) The pressure sensor according to claim 1, wherein the diaphragm is formed by subjecting a silicon substrate to anisotropic etching. (2) The pressure sensor according to claim 1, wherein the piezoresistor is formed by diffusing boron into a silicon substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19949583A JPS6090696A (en) | 1983-10-25 | 1983-10-25 | Pressure-sensitive sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19949583A JPS6090696A (en) | 1983-10-25 | 1983-10-25 | Pressure-sensitive sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6090696A true JPS6090696A (en) | 1985-05-21 |
Family
ID=16408762
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19949583A Pending JPS6090696A (en) | 1983-10-25 | 1983-10-25 | Pressure-sensitive sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6090696A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60164231A (en) * | 1984-02-06 | 1985-08-27 | Hitachi Ltd | Force distribution detector |
JPS6166135A (en) * | 1984-09-10 | 1986-04-04 | Toshiba Corp | Sence-of-contact-force sensor |
JPS63113326A (en) * | 1986-10-31 | 1988-05-18 | Nec Corp | Tactile sensation sensor |
JPH01316193A (en) * | 1988-06-11 | 1989-12-21 | Wako:Kk | Gripper for robot |
JP2010528267A (en) * | 2007-05-18 | 2010-08-19 | ユニバーシティ オブ サザン カリフォルニア | Biomimetic tactile sensor for grip control |
JP2011099675A (en) * | 2009-11-03 | 2011-05-19 | Seiko Epson Corp | Pressure sensor, sensor array, and method of manufacturing pressure sensor |
JP2011169749A (en) * | 2010-02-18 | 2011-09-01 | Advanced Telecommunication Research Institute International | Tactile sensor and robot including the same |
JP2012215533A (en) * | 2011-03-28 | 2012-11-08 | Seiko Epson Corp | Pressure sensor, sensor array, method for manufacturing sensor array, and holding device |
JP2013170896A (en) * | 2012-02-20 | 2013-09-02 | Kagawa Univ | Tactile sensor |
JP2014044212A (en) * | 2013-11-13 | 2014-03-13 | Seiko Epson Corp | Stress sensor array |
-
1983
- 1983-10-25 JP JP19949583A patent/JPS6090696A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60164231A (en) * | 1984-02-06 | 1985-08-27 | Hitachi Ltd | Force distribution detector |
JPH0554053B2 (en) * | 1984-02-06 | 1993-08-11 | Hitachi Ltd | |
JPS6166135A (en) * | 1984-09-10 | 1986-04-04 | Toshiba Corp | Sence-of-contact-force sensor |
JPS63113326A (en) * | 1986-10-31 | 1988-05-18 | Nec Corp | Tactile sensation sensor |
JPH01316193A (en) * | 1988-06-11 | 1989-12-21 | Wako:Kk | Gripper for robot |
JP2010528267A (en) * | 2007-05-18 | 2010-08-19 | ユニバーシティ オブ サザン カリフォルニア | Biomimetic tactile sensor for grip control |
JP2011099675A (en) * | 2009-11-03 | 2011-05-19 | Seiko Epson Corp | Pressure sensor, sensor array, and method of manufacturing pressure sensor |
JP2011169749A (en) * | 2010-02-18 | 2011-09-01 | Advanced Telecommunication Research Institute International | Tactile sensor and robot including the same |
JP2012215533A (en) * | 2011-03-28 | 2012-11-08 | Seiko Epson Corp | Pressure sensor, sensor array, method for manufacturing sensor array, and holding device |
JP2013170896A (en) * | 2012-02-20 | 2013-09-02 | Kagawa Univ | Tactile sensor |
JP2014044212A (en) * | 2013-11-13 | 2014-03-13 | Seiko Epson Corp | Stress sensor array |
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