JPS6087497A - Magnetic bubble transfer forming method - Google Patents

Abstract

PURPOSE:To prevent the generation of a faulty characteristic due to charge-up by injecting ion after forming a mask pattern to form a conductive thin film layer and the transfer line on the most part of the area on a magnetic garnet film monocrystal body. CONSTITUTION:After a chrome thin layer 2 is formed by the 100Angstrom deposition method as a conductive thin layer on a magnetic garnet film monocrystal body 1, the gold layer with thickness 5,000Angstrom is formed by the deposition, and a mask pattern 3 for forming the transfer line is formed by milling the said gold layer with the ion milling. Or, after the gold layer with thickness 5,000Angstrom is formed on the magnetic garnet film monocrystal body, the mask pattern 3 for forming the transfer line is formed by milling the said gold layer with ion milling. The conductive thin layer has the same effect even for the metal such as gold, chrome, etc., and carbon, silicone, etc. Even when the film thickness is 500Angstrom and 1,000Angstrom the same effect can be obtained. Even when the mask pattern for forming a transfer line is gold and other regist such as Az-1350, etc., the effect will not change.

Description

Detailed Description of the Invention The present invention relates to a method for forming a magnetic bubble transfer path, particularly a method for forming a magnetic bubble transfer path in which a transfer path for magnetic bubble domains (hereinafter referred to as bubbles) is formed by implanting ions into a single crystal magnetic garnet film. Regarding the method.

The magnetic bubble transfer path targeted in the present invention is shielded by a bead-shaped mask pattern formed on a magnetic garnet film single crystal having a negative magnetostriction constant and uniaxial magnetic anisotropy perpendicular to the film surface. By implanting ions into a region other than the ion-implanted region, the lattice constant in the direction perpendicular to the film thickness of the ion-implanted surface layer is increased, and the surface layer has an easy direction in the film plane due to the magnetostrictive effect. It is formed by changing. A bubble is driven by a charged wall generated at the outer edge of the boundary of the transfer path, which is the bead-shaped non-injected region thus formed.

Conventionally, this magnetic bubble transfer path has been formed by forming a transfer path forming mask pattern 3 on a single crystal magnetic garnet film 1 and then implanting ions as shown in FIG.

However, in the conventional magnetic puzzle transfer path formation method, since magnetic garnet is an insulator, there is a risk of charge-up. If this is the case, a means to prevent charge-up is essential.

The present invention has been made in view of these points, and its object is to provide a method for forming a magnetic bubble transfer path that does not cause characteristic defects due to charge-up.

According to the present invention, a method for forming a magnetic bubble transfer path is characterized in that ions are implanted after forming a conductive thin layer and a mask pattern for forming a transfer path in at least a large area on a single crystalline magnetic garnet film. is obtained.

Embodiments of the present invention will be described below with reference to the drawings.

Example 1 As shown in FIG. 1, a thin chromium layer 2 was formed as a conductive thin layer on a magnetic garnet film single crystal 1 by a 100A vapor deposition method, and then a gold layer with a thickness of 5000 nm was formed by vapor deposition. A transfer path forming mask pattern 3 was formed by milling the gold layer by ion milling.

After that, hydrogen ions (H2'') are applied at a dose of 3 x 10111 ions/C- at an acceleration energy of 70 KV and at a dose of 1.5 x 1016 ions/crl at an acceleration energy of 35 KV.
When implanted using a mechanical scan type ion implanter, the implantation was performed normally and the transfer path was also formed normally.

On the other hand, as shown in Fig. 3, a transfer path is formed by forming a gold layer with a thickness of 5000 mm on the magnetic garnet single crystal 1 by vapor deposition, and then milling the gold layer by ion milling. When a mask pattern 3 was formed and ions were implanted using the same equipment and the same implantation conditions as in the previous example, the magnetic garnet film was damaged due to charge-up.

Example 2 As shown in FIG.
After forming a gold layer of 0.00 mm, the gold layer was milled by ion milling to form a transfer path forming mask pattern 3.

Thereafter, a total thin layer 4 having a thickness of 200 mm was deposited as a conductive thin layer on at least a large part of the magnetic garnet film 1 by vapor deposition. Thereafter, when ions were implanted using the same equipment and the same implantation conditions as in Example 1, the implantation was performed normally and the transfer path was also formed normally.

As is clear from Examples 1 and 2, in the present invention, a conductive thin layer is formed on a single crystal magnetic garnet film, a mask pattern for forming a transfer path is formed, and ions are implanted from above, and a magnetic garnet film is A similar effect is produced when ions are implanted over a conductive thin layer after forming a transfer path forming mask pattern on a single crystal. In addition to metals such as gold and chromium, the conductive thin layer can also be made of carbon,
A similar effect was obtained with silicon, etc. In addition, the film thickness was 500 people and 1000 people, and the t effect was 1.
The effect of the present invention does not change in any way even if a resist of 50 or the like is used.

As described above, the present invention enables high current ion implantation.

[Brief explanation of drawings]

1 and 2 are cross-sectional views of an embodiment according to the manufacturing method of the present invention, and FIG. 3 is a cross-sectional view of an example according to a conventionally known method. 1... Single crystal magnetic garnet film, 2... Thin chromium layer, 3... Mask pattern for forming a transfer path, 4... All thin layers.

Claims (1)

[Claims] A method for forming a magnetic bubble transfer path, which comprises forming a conductive thin layer and a mask pattern for forming a transfer path in at least a large portion of a single crystalline magnetic garnet film, and then implanting ions.