JPS60791A - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number
JPS60791A
JPS60791A JP10883483A JP10883483A JPS60791A JP S60791 A JPS60791 A JP S60791A JP 10883483 A JP10883483 A JP 10883483A JP 10883483 A JP10883483 A JP 10883483A JP S60791 A JPS60791 A JP S60791A
Authority
JP
Japan
Prior art keywords
active layer
wave guide
laser
fabry
end surfaces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10883483A
Other languages
Japanese (ja)
Inventor
Masakazu Mori
正和 森
Shoichi Miura
三浦　省一
「はな」光　清
Kiyoshi Hanamitsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10883483A priority Critical patent/JPS60791A/en
Publication of JPS60791A publication Critical patent/JPS60791A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/0632—Thin film lasers in which light propagates in the plane of the thin film
    • H01S3/0635—Thin film lasers in which light propagates in the plane of the thin film provided with a periodic structure, e.g. using distributed feed-back, grating couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To inhibit Fabry-Perot mode oscillation even in the case of a large degree of amplification by a method wherein both end surfaces are connected in ring form by means of a dielectric wave guide or a laser medium, in a distributed feedback type laser and a distributed reflection type laser. CONSTITUTION:Both the end surfaces of an active layer 5 are connected in ring form by means of the dielectric wave guide 7, resulting in the inhibition of the Fabry-Perot mode oscillation, in the distribution feedback type laser. At this time, the length of the wave guide 7 is taken larger than a coherence length. Such a manner does not allow said oscillation even in the case of the increase of the degree of amplification of the active layer 5, since both the end surfaces of the active layer 5 are constructed in ring form by means of the wave guide 7. Light is taken out by means of an optical fiber 9 from the active layer 5 via the wave guide 7 and an output coupling wave guide 8, there-fore the length from the active layer 5 is long, and then the influence of the reflection on the coupling part with the optical fiber 9 can be alleviated.

Description

【発明の詳細な説明】 （ａ）　発明の技術分野 本発明は、分布帰還形レーザ（以下ＤＦＢレーザと称す
）及び分布反射形レーザ（以下ＤＢＲレーザと称す）の
増中度が大きい場合でも７アプリベロモ一ド発振を抑圧
出来る半導体レーザに関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention provides a method for distributing the power of 7 even when the degree of increase in intensity of distributed feedback lasers (hereinafter referred to as DFB lasers) and distributed reflection lasers (hereinafter referred to as DBR lasers) is large. This invention relates to a semiconductor laser that can suppress appli-velomode oscillation.

（ｂ）従来技術と問題点 高速度光信号伝送においてはモード分配雑音が支配的な
伝送距離制限要因となる。この制限を取シ除く手段とし
てＤＦＢレーザ及びＤＢＲレーザが開発されている。現
在開発されているＤＦＢレーザ及びＤＢＲレーザの問題
点は増中度が大きくなった時ファブリペローモードでの
発振が生じ、多縦モード発振をすることである。(b) Prior Art and Problems In high-speed optical signal transmission, mode distribution noise is a dominant factor limiting transmission distance. DFB lasers and DBR lasers have been developed as means to remove this limitation. The problem with currently developed DFB lasers and DBR lasers is that when the degree of enhancement becomes large, oscillation occurs in the Fabry-Perot mode, resulting in multi-longitudinal mode oscillation.

これは単−紋モード発振が請求される、ＤＦＢ；ＤＢＲ
レーザにとっては重要な問題である。この為両端面をテ
ーパ状にして反射を抑圧しているがこれでもさらに増中
度の大きい物では、ファブリペローモードでの発振が生
じ多縦モード発振が生ずる。This is called single-pattern mode oscillation, DFB; DBR
This is an important issue for lasers. For this reason, both end faces are tapered to suppress reflection, but even with this, if the degree of amplification is even greater, oscillation in the Fabry-Perot mode occurs, resulting in multi-longitudinal mode oscillation.

従来のＤＦＢ、ＤＢＲレーザには上記のような欠府があ
る。Conventional DFB and DBR lasers have the above-mentioned deficiencies.

（ｃ）　発明の目的 本発明の目的は上記の欠点に６み、ＤＦＢレーｆＤＢＲ
レーザの増巾度が非常に大きい場合でもファブリペロモ
ード発振を抑止出来る半導体レーザの提供にある。(c) Object of the Invention The object of the present invention is to solve the above-mentioned drawbacks and to improve the DFB rate fDBR.
An object of the present invention is to provide a semiconductor laser capable of suppressing Fabry-Perot mode oscillation even when the amplification degree of the laser is extremely large.

（ｄ）　発明の構成 本発明は上記の目的を連成するだめに、ＤＦＢレーザ及
びＤＢＲレーザにおいて、両端面を誘電体導波路又はレ
ーザ媒質を用いリング状に接続したことを特徴とする。(d) Structure of the Invention In order to achieve the above objects, the present invention is characterized in that both end faces of a DFB laser and a DBR laser are connected in a ring shape using a dielectric waveguide or a laser medium.

（ｅ）　発明の実施例 以下本発明の実施例につき図に従って説明する。(e) Examples of the invention Embodiments of the present invention will be described below with reference to the drawings.

第１図は従来例のＤＦＢレーザの断面図囚及び（５）の
丸印部分の拡大図ＣＢ）であり、第２図は本発明の実施
例のＤＦＢレーザの断面図で（４）は平面し１、（Ｂ）
は下側面図、（Ｃ）は右側面図を示す。Figure 1 is a cross-sectional view of a conventional DFB laser and an enlarged view (CB) of the circled area in (5). Figure 2 is a cross-sectional view of a DFB laser according to an embodiment of the present invention, and (4) is a plane view. 1, (B)
(C) shows a bottom side view, and (C) shows a right side view.

図中１，５は活性層、２，３は端面、４，６は回折格子
、７は誘電体導波路（父はレーザ媒質へ８は出力結合導
波路、９は光７アイノくを示す。In the figure, 1 and 5 are active layers, 2 and 3 are end faces, 4 and 6 are diffraction gratings, 7 is a dielectric waveguide (the latter is connected to a laser medium, 8 is an output coupling waveguide, and 9 is an optical 7 ink).

ｉ１図のＤＦ”Ｂレーザの発振波長は次式の発振器条件
で与えられる。The oscillation wavelength of the DF''B laser shown in Figure i1 is given by the oscillator condition of the following equation.

λ −Ｎ　＝　ａ ｎ ここでＮは自然数でありＮ＝２の場合が多く製造されて
いる。ａは回折格子の間隔てあシはぼ４０゜ｎｍ位であ
る。λは真空中での波長、ｎはレーザ媒質の屈折率であ
る。λ −N = a n Here, N is a natural number, and the case where N=2 is often manufactured. The distance a between the diffraction gratings is about 40 nm. λ is the wavelength in vacuum, and n is the refractive index of the laser medium.

第１図の従来のＤＦＢレーザでは、端面２，３をテーパ
状にして反射を４抑圧しても活性層１の増中度が非常に
大きくなるとファブリペロモードでの発振が生ずる。In the conventional DFB laser shown in FIG. 1, even if the end faces 2 and 3 are tapered to suppress reflection by 4, oscillation in the Fabry-Perot mode occurs when the degree of enhancement of the active layer 1 becomes very large.

そこで本発明では第２図に示す如く活性層５の両端面を
透電体済波路（又はレーザ媒質）７でリング状に接続し
てファブリペロモード発振を抑圧している。この時、誘
電体導波路７の長さは可干渉長よシも長くとる。このよ
うにすれば活性層５の両端面は誘電体導波路（又はレー
ザ媒質）７でリング状に構成されているため活性層５の
増中度カ大キくなってもファブリペロモードの発振はし
ない。Therefore, in the present invention, as shown in FIG. 2, both end faces of the active layer 5 are connected in a ring shape by a conductive wave path (or laser medium) 7 to suppress Fabry-Perot mode oscillation. At this time, the length of the dielectric waveguide 7 is set to be longer than the coherent length. In this way, both end faces of the active layer 5 are configured in a ring shape with the dielectric waveguide (or laser medium) 7, so even if the intensity increase of the active layer 5 becomes large, the Fabry-Perot mode oscillates. I don't.

又第２図に示す如く光ファイバ９で光を取出すのは、活
性層５より、誘電体導波路７、出力結合導波路８を介し
て取出すので、活性ＩＮ！５よりの距ｌｉ′１ｔが長い
ので光ファイバ９との結合部における反射の影譬を軽減
することも出来る。又誘電体導波路７内に異った間隔の
回折格子を複数設けることにより、多縦モード発振をさ
せることも可能でありマルナモードファイバ用光源とし
て用いることも出来る。Furthermore, as shown in FIG. 2, light is extracted through the optical fiber 9 from the active layer 5 via the dielectric waveguide 7 and the output coupling waveguide 8, so that the active IN! Since the distance li'1t from the optical fiber 9 is long, it is possible to reduce the influence of reflection at the coupling portion with the optical fiber 9. Furthermore, by providing a plurality of diffraction gratings with different intervals in the dielectric waveguide 7, it is possible to cause multi-longitudinal mode oscillation, and it can also be used as a light source for a Maruna mode fiber.

第３図は本発明の実施例のＤＢＲレーザの断面図で（４
）は平面図（Ｂ）は右側面図である。FIG. 3 is a cross-sectional view of a DBR laser according to an embodiment of the present invention (4
) is a plan view (B) is a right side view.

回申１０は活性層、１１．１２は回折格子、１３は誘電
体導波路（又はレーザｆｆ質）、１４は出力結合導波路
、１５は光ファイバを示す。Reference numeral 10 indicates an active layer, 11 and 12 a diffraction grating, 13 a dielectric waveguide (or laser ff quality), 14 an output coupling waveguide, and 15 an optical fiber.

第３図は、ＤＢＲレーザのＷ１合な小しており、回折格
子１１．１２のある誘電体導波路１３１−］：ＩＪング
状になっている為、端面がなくＤＦＢ形の場合で説明し
たと同様に活性層１０の増中度が非常に大きくなっても
ファブリペロモード発振を生ずることはない。In Figure 3, the W1 of the DBR laser is small, and the dielectric waveguide 131-] with the diffraction grating 11. Similarly, even if the degree of enhancement of the active layer 10 becomes extremely large, Fabry-Perot mode oscillation will not occur.

（ｆ）　発明の効果 以上詳細に説明せる如く、本発明によれば、ＤＦＢレー
ザ及びＤＢＲレーザの増巾度が非常に大きい場合でもフ
ァブリペロモード発止を抑圧出来る効果がある。(f) Effects of the Invention As explained in detail above, the present invention has the effect of suppressing Fabry-Perot mode onset even when the degree of amplification of the DFB laser and the DBR laser is very large.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来例の分布帰還形レーザの１６＋面図、第２
図は本発明の実施例の分布帰戚形レーザの断面図、第３
図は本発明の実施例の分布反射形レーザの断面図である
。 図中１．５．１０は活性層、２，３は端面、４，６゜１
１．１２は回折格子、７．１３は誘電体導波路（又はレ
ーザ媒質）、８．１４は出力結合導波路、９゜１５は光
ファイバを示す〇 第　ｌｌ２Ｉ □と□− 第　２　図 部３図Figure 1 is a 16+ side view of a conventional distributed feedback laser;
The figure is a cross-sectional view of a distributed distribution type laser according to an embodiment of the present invention.
The figure is a sectional view of a distributed reflection laser according to an embodiment of the present invention. In the figure, 1, 5 and 10 are active layers, 2 and 3 are end faces, 4 and 6°1
1.12 is a diffraction grating, 7.13 is a dielectric waveguide (or laser medium), 8.14 is an output coupling waveguide, and 9.15 is an optical fiber. figure

Claims (1)

【特許請求の範囲】[Claims] 分布帰還形レーザ及び分布反射形レーザにおいて、両端
面を誘電体導波路又はレーザ媒質を用いリング状に接続
したことを特徴とする半導体レーザ０A semiconductor laser 0 characterized in that, in a distributed feedback laser and a distributed reflection laser, both end faces are connected in a ring shape using a dielectric waveguide or a laser medium.
JP10883483A 1983-06-17 1983-06-17 Semiconductor laser Pending JPS60791A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10883483A JPS60791A (en) 1983-06-17 1983-06-17 Semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10883483A JPS60791A (en) 1983-06-17 1983-06-17 Semiconductor laser

Publications (1)

Publication Number Publication Date
JPS60791A true JPS60791A (en) 1985-01-05

Family

ID=14494730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10883483A Pending JPS60791A (en) 1983-06-17 1983-06-17 Semiconductor laser

Country Status (1)

Country Link
JP (1) JPS60791A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6446720A (en) * 1987-07-15 1989-02-21 American Telephone & Telegraph Fabry-perot cavity
JP2015002335A (en) * 2013-06-18 2015-01-05 日本電信電話株式会社 Integrated semiconductor light source

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6446720A (en) * 1987-07-15 1989-02-21 American Telephone & Telegraph Fabry-perot cavity
JP2015002335A (en) * 2013-06-18 2015-01-05 日本電信電話株式会社 Integrated semiconductor light source

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