JPS6078135U

JPS6078135U - Ion beam etching device

Info

Publication number: JPS6078135U
Application number: JP16933783U
Authority: JP
Inventors: 矢板　司; 村上　欽一郎
Original assignee: 株式会社日立国際電気
Priority date: 1983-11-02
Filing date: 1983-11-02
Publication date: 1985-05-31

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Brief explanation of drawings]

第１図は従来のイオンビームエツチング装置の構成概要
図、第２図は従来のシャッタの一例の平面図と側面図、
第３図は従来のイオンビーム電流の密度分布測定器の一
例の平面図と側面図、第４図はイオンビームの分布特性
の一例図、第５図は理想的なイオンビームの分布特性側
図、第６図は本考案を実施した一方向イオンビーム電流
密度分布測定器の構成原理図である。１・・・真空容器、３・・・試料ホルダ、４・・・試料
、５・・・試料ホルダ支柱、６・・・傾斜と回転機構、
７・・・シャッタ、８，２１・・・イオンビーム電流密
度検出器（ファラデイカツブ）、１０・・・イオンビー
ム、１１・・・イオンビーム源、１２・・・ガス導入口
、１３・・・排気口、１４・・・丸穴、１５・・・カバ
ー、１６・・・ファラデイカツブリード線、１７・・・
ファラデイカツブ、１８・・・イオンビーム電流密度検
出器取付用治具、２０・・・イオンビーム放射面、２２
・・・２１の支持棒、２３・・・２２の移動ねじ棒。＋Ｍ、ｆｉ；ｉ　ｌ１ｌ１１３］４へ、＋５　　　Ｉ＝１”８−１・・（）　旧　二ｊFig. 1 is a schematic diagram of the configuration of a conventional ion beam etching device, Fig. 2 is a plan view and a side view of an example of a conventional shutter,
Figure 3 is a plan view and side view of an example of a conventional ion beam current density distribution measuring device, Figure 4 is an example of ion beam distribution characteristics, and Figure 5 is a side view of ideal ion beam distribution characteristics. , FIG. 6 is a diagram showing the principle of construction of a unidirectional ion beam current density distribution measuring device embodying the present invention. DESCRIPTION OF SYMBOLS 1... Vacuum container, 3... Sample holder, 4... Sample, 5... Sample holder support, 6... Tilt and rotation mechanism,
7...Shutter, 8, 21...Ion beam current density detector (Faraday Katsubu), 10...Ion beam, 11...Ion beam source, 12...Gas inlet, 13...Exhaust Mouth, 14... Round hole, 15... Cover, 16... Faraday cutlet bleed wire, 17...
Faraday tube, 18... Ion beam current density detector mounting jig, 20... Ion beam radiation surface, 22
...21 support rod, 23...22 moving screw rod. +M, fi;i l1l 113] to 4, +5 I=1”8-1...() old 2j

Claims

[Scope of utility model registration request]

An ion source that generates an ion beam in a fixed direction by flowing a controlled plasma generation gas inside a vacuum container, and an ion source that can rotate freely around the center of the surface on which the sample to be etched by the ion beam is mounted. In addition to a shutter that is provided between the sample holder and its support drive unit, the ion source and the sample mounting surface, and opens and closes the ion beam that reaches the sample surface, the ion beam is placed between the shutter and the ion source. The ion beam current density detector is configured to continuously and linearly move the current density detector from at least one end of the ion beam generation surface of the ion source to the other end of the ion beam generation surface of the ion source, and the feed screw rod of the support rod thereof. An ion beam etching device characterized by being equipped with an ion beam current density distribution measuring mechanism.