JPS6074673A - 光学的固体装置 - Google Patents

光学的固体装置

Info

Publication number
JPS6074673A
JPS6074673A JP58182775A JP18277583A JPS6074673A JP S6074673 A JPS6074673 A JP S6074673A JP 58182775 A JP58182775 A JP 58182775A JP 18277583 A JP18277583 A JP 18277583A JP S6074673 A JPS6074673 A JP S6074673A
Authority
JP
Japan
Prior art keywords
substrate
capacitor
signal
transistor
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58182775A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0564466B2 (enrdf_load_stackoverflow
Inventor
Nozomi Harada
望 原田
Yasuhisa Oana
保久 小穴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58182775A priority Critical patent/JPS6074673A/ja
Publication of JPS6074673A publication Critical patent/JPS6074673A/ja
Publication of JPH0564466B2 publication Critical patent/JPH0564466B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP58182775A 1983-09-30 1983-09-30 光学的固体装置 Granted JPS6074673A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58182775A JPS6074673A (ja) 1983-09-30 1983-09-30 光学的固体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58182775A JPS6074673A (ja) 1983-09-30 1983-09-30 光学的固体装置

Publications (2)

Publication Number Publication Date
JPS6074673A true JPS6074673A (ja) 1985-04-26
JPH0564466B2 JPH0564466B2 (enrdf_load_stackoverflow) 1993-09-14

Family

ID=16124197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58182775A Granted JPS6074673A (ja) 1983-09-30 1983-09-30 光学的固体装置

Country Status (1)

Country Link
JP (1) JPS6074673A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01108766A (ja) * 1987-10-21 1989-04-26 Semiconductor Energy Lab Co Ltd 密着型イメージセンサ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01108766A (ja) * 1987-10-21 1989-04-26 Semiconductor Energy Lab Co Ltd 密着型イメージセンサ

Also Published As

Publication number Publication date
JPH0564466B2 (enrdf_load_stackoverflow) 1993-09-14

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