JPS6074580A - Detecting element for acceleration - Google Patents
Detecting element for accelerationInfo
- Publication number
- JPS6074580A JPS6074580A JP18049483A JP18049483A JPS6074580A JP S6074580 A JPS6074580 A JP S6074580A JP 18049483 A JP18049483 A JP 18049483A JP 18049483 A JP18049483 A JP 18049483A JP S6074580 A JPS6074580 A JP S6074580A
- Authority
- JP
- Japan
- Prior art keywords
- acceleration
- electrodes
- tunnel
- electrons
- variation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001133 acceleration Effects 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000000694 effects Effects 0.000 abstract description 7
- 239000004020 conductor Substances 0.000 abstract description 4
- 230000005641 tunneling Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、トンネル効果を利用した加速度検知素子に関
する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an acceleration sensing element that utilizes the tunnel effect.
従来、移動物体の加速度を検出する加速度計としては、
力学における運動法則を利用した機械的な慣性計が用い
られている。この慣性計は、所望する検出精度にもよる
が、一般に高精度部品と高度な組立技術とを必要とし、
装置価格が極めて高いものである。さらに、装置の重量
及び体積が限定されるので、微小化・軽量化をはかるこ
とは困難であった。Conventionally, accelerometers that detect the acceleration of moving objects include:
A mechanical inertia meter is used that utilizes the laws of motion in mechanics. This inertial meter generally requires high-precision components and advanced assembly techniques, depending on the desired detection accuracy.
The equipment price is extremely high. Furthermore, since the weight and volume of the device are limited, it has been difficult to reduce the size and weight of the device.
一方、上記の慣性計に代わるものとして、最近光ファイ
ノ々を利用した加速度計が考案されている。これは、光
ファイバに質量を取シ付け、加速度によシ光ファイバが
伸縮することにより生じた光路差を干渉法を用いて感知
するものである。しかしながら、この種の加速度計にあ
っても、加速度を直接検知する部分は、従来の機械的な
慣性計と同様に質量に対する運動法則を利用している。On the other hand, as an alternative to the above-mentioned inertial meter, an accelerometer using optical fins has recently been devised. This involves attaching a mass to an optical fiber and using interferometry to sense the optical path difference caused by the expansion and contraction of the optical fiber due to acceleration. However, even in this type of accelerometer, the part that directly detects acceleration utilizes the law of motion for mass, similar to conventional mechanical inertia meters.
このため、慣性計と同様に微小化・軽量化をはかること
は困難であった。For this reason, it has been difficult to make it smaller and lighter like inertial meters.
本発明の目的は、微小化及び軽量化をはかシ得ると共に
、高精度の加速度測定を可能とし、かつその製造も容易
な加速度検知素子を提供することにある。An object of the present invention is to provide an acceleration sensing element that is miniaturized and lightweight, enables highly accurate acceleration measurement, and is easy to manufacture.
本発明の骨子は、トンネル効果により電極間に流れるト
ンネル電流の加速度による変動を感知することにある。The gist of the present invention is to sense changes in tunnel current flowing between electrodes due to acceleration due to the tunnel effect.
電子や中性子等の原子的スケールでの運動に、重力及び
慣性力が外力として作用することが最近の実験により確
認されている（ Ｓ 、 Ａ 、 Ｗｅ ｒ ｒ ｅ
ｒ 。Recent experiments have confirmed that gravity and inertial force act as external forces on the movement of electrons, neutrons, etc. on an atomic scale (S, A, Werre
r.
Ｊ、−Ｌ、 Ｓｔａｕｄｅｎｍｎｎ、 Ｒ，Ｃｏ１５ｌ
ｌａ、 Ｐｈｙｓ、 Ｒｅｖ−Ｌｓｔｔ、 ４２ 、１
１０３ （１９７９）。 この点に着目して本発明者等
が鋭意研究を重ねた結果、十分に近接して分離した２つ
の導体電極間に流れるトンネル電流が、加速度による慣
性力によって変動することを見出した。そして、本発明
者等の更なる鋭意研究によれば、上記慣性力によるトン
ネル電流の測定により、十分な精度で加速度を検出でき
るのが判明した。J,-L,Staudenmnn,R,Co15l
la, Phys, Rev-Lstt, 42, 1
103 (1979). Focusing on this point, the inventors of the present invention conducted extensive research and found that the tunnel current flowing between two conductor electrodes separated sufficiently close to each other fluctuates due to the inertial force caused by acceleration. According to further intensive research by the present inventors, it has been found that acceleration can be detected with sufficient accuracy by measuring the tunnel current due to the inertial force.
すなわち本発明は、一方向の加速度を検知する素子であ
って、絶縁基板上に第１及び第２の電極を、これらの電
極間にトンネル電流が流れ得る程度に十分近接し、かつ
検知すべき加速度の方向に対向配置し、各電極間に流れ
るトンネル電流の加速度による変動量を測定するように
したものである。That is, the present invention is an element that detects acceleration in one direction, and has first and second electrodes on an insulating substrate sufficiently close to each other to allow a tunnel current to flow between these electrodes, and which should be detected. The electrodes are arranged opposite to each other in the direction of acceleration, and the amount of variation in tunnel current flowing between each electrode due to acceleration is measured.
本発明によれば、第１及び第２の電極間に流れるトンネ
ル電流の変動分を測定することによシ、その変動の原因
である装置にかかる加速度の慣性力を感知することがで
き、これにより加速度を検出することができる。しかも
、従来の加速度計と異なシ、質量に対する加速度の力学
的効果を利用した機械的な部分を全く必要としないので
、装置構成の微小化及び軽量化をはかることができ、さ
らに集積化することも可能である。また、各電極間を流
れるトンネル電流はトンネル効果による電子の移動によ
シ生じるが、その移動度は電子に印加される外力（加速
度）に極めて敏感に反応する。このため、加速度の検出
を高精度に行い得る等の利点がある。According to the present invention, by measuring the variation in the tunnel current flowing between the first and second electrodes, it is possible to sense the inertial force of acceleration applied to the device, which is the cause of the variation. Acceleration can be detected by Moreover, unlike conventional accelerometers, it does not require any mechanical parts that utilize the mechanical effect of acceleration on mass, so the device configuration can be made smaller and lighter, and it can be further integrated. is also possible. Further, the tunnel current flowing between each electrode is caused by the movement of electrons due to the tunnel effect, and the mobility responds extremely sensitively to external force (acceleration) applied to the electrons. Therefore, there are advantages such as being able to detect acceleration with high precision.
第１図は本発明の一実施例に係わる加速度検知素子の概
略構造を示す斜視図である。図中１は絶縁性の基板でお
り、この基板１上にＡｕ等の導体からなる第１及び第２
の電極２，３が、電子がトンネル可能となるよう十分近
接して分離形成されている。ここで、基板１は例えばシ
リコン基板上に酸化膜を形成したものであってもよい。FIG. 1 is a perspective view showing a schematic structure of an acceleration sensing element according to an embodiment of the present invention. In the figure, reference numeral 1 indicates an insulating substrate, and on this substrate 1 there are first and second electrodes made of a conductor such as Au.
The electrodes 2 and 3 are formed sufficiently close to each other and separated so that electrons can tunnel therethrough. Here, the substrate 1 may be, for example, a silicon substrate on which an oxide film is formed.
また、電極２，３は基板１上に導体薄膜を被着形成し、
これをエツチングにより分離したものであってもよい。Further, the electrodes 2 and 3 are formed by depositing a conductive thin film on the substrate 1,
This may be separated by etching.
このような構造において、第１及び第２の電極２，３間
に直流電圧Ｖを印加すると、トンネル効果によシミ極２
，３間には
＝ Ｊｏ ｅｘｐ （−一・ｔｌを百Ｉ−；Ｖ−Ｅ ）
・・・（１）なるトンネル電流が流れる（ Ｋ、 Ｙ
ａｓｕｓ、 Ｐｈｙｓ。In such a structure, when a DC voltage V is applied between the first and second electrodes 2 and 3, the stain electrode 2
, between 3 = Jo exp (-1 tl to 100 I-; V-E)
...(1) A tunnel current flows (K, Y
asus, Phys.
Ｒａｙ、 Ｌａｔｔ、 ４０ 、６６５ （１９７７）
）。 ここで１、ｒｏは比例定数、ｔ□は電極２，３
間の間隔、ｅは電荷質量、Ｅは導体中での電子のエネル
ギ、ｉｓ ＝ ｈ／２π（ｈ：ｆランク定数）、Ｕは電
極２゜３間の相対的なエネルギギャップである。Ray, Latt, 40, 665 (1977)
). Here, 1, ro is a proportionality constant, t□ is electrodes 2 and 3
e is the charge mass, E is the energy of the electron in the conductor, is = h/2π (h: f rank constant), and U is the relative energy gap between the electrodes 2°3.
いま、上記素子にｇなる加速度（ただし加速度方向は入
方向）が加わったとすると、電子には−ｇなる慣性力が
作用し、トンネル効果によシミ極２，３間に流れるトン
ネル電流Ｊ′はとなシ、指数で
１− ｉ ｍ−ｇ−１１２（Ｕ−ｅ ＠Ｖ−Ｅ）−’
・（３）だけ変動する。ここで、ｍは電子の質量である
。Now, if an acceleration of g is applied to the above element (however, the acceleration direction is the incoming direction), an inertial force of -g acts on the electrons, and the tunnel current J' flowing between the stain poles 2 and 3 due to the tunnel effect is Tonashi, the index is 1-i m-g-112 (U-e @V-E)-'
・It changes by (3). Here, m is the mass of the electron.
したがって、電極２，３間に印加する電圧Ｖを調節する
ことによシ、上記（３）式で示す指数部における変動を
有意な値にすることができ、トンネル電流の変動分（Ｊ
’−Ｊ）を測定検知することが可能となる。そして、上
記変動分と加速度との関係を予めめておけば、測定され
た電流変動分から前記入方向の加速度を容易に検出する
ことができる。Therefore, by adjusting the voltage V applied between the electrodes 2 and 3, it is possible to make the fluctuation in the index part shown in the above equation (3) a significant value, and the fluctuation in the tunnel current (J
'-J) can be measured and detected. If the relationship between the variation and the acceleration is established in advance, the acceleration in the input direction can be easily detected from the measured current variation.
かくして本実施例によれば、絶縁基板１上に２つの電極
２，３を設けた極めて簡易な構成で加速度を検出するこ
とができる。このため、全体構成の微小化及び軽量化を
はかることができ、集積化することも可能となる。Thus, according to this embodiment, acceleration can be detected with an extremely simple configuration in which two electrodes 2 and 3 are provided on the insulating substrate 1. Therefore, the overall configuration can be made smaller and lighter, and it is also possible to integrate it.
なお、本発明は上述した実施例に限定されるものではな
い。例えば、前記電極２，３は必ずしも同一平面上に分
離されたものである必要はなく、第２図に示す如く第１
の電極２上に絶縁膜４を介して第２の電極３を設けたも
のであってもよい。この場合、紙面上下方向（Ｂ方向）
の加速度が検出されることになる。まだ、電極２．３の
材質や電極２．３間の距離等は、仕様に応じて適宜定め
ればよい。その他、本発明の要旨を逸脱しない範囲で、
種々変形して実施することかできる。Note that the present invention is not limited to the embodiments described above. For example, the electrodes 2 and 3 do not necessarily have to be separated on the same plane, and as shown in FIG.
The second electrode 3 may be provided on the electrode 2 with an insulating film 4 interposed therebetween. In this case, the vertical direction of the paper (B direction)
acceleration will be detected. However, the material of the electrodes 2.3, the distance between the electrodes 2.3, etc. may be determined as appropriate according to the specifications. In addition, without departing from the gist of the present invention,
It can be implemented with various modifications.
第１図は本発明の一実施例に係わる加速度検知素子の概
略構造を示す斜視図、第２図は変形例を説明するだめの
断面図である。
１・・・絶縁基板、２，３・・・電極、４・・・絶縁膜
。
第１図
□Ａ
第２図FIG. 1 is a perspective view showing a schematic structure of an acceleration sensing element according to an embodiment of the present invention, and FIG. 2 is a sectional view for explaining a modification. 1... Insulating substrate, 2, 3... Electrode, 4... Insulating film. Figure 1□A Figure 2
Claims (1)
第１及び第２の電極を、これらの電極間にトンネル電流
が流れ得る程度に近接し、かつ上記検知すべき加速度の
方向に対向配置してなることを特徴とする加速度検知素
子。An element that detects acceleration in one direction, in which first and second electrodes are placed on an insulating substrate close enough to allow a tunnel current to flow between these electrodes, and facing in the direction of the acceleration to be detected. An acceleration sensing element characterized by being arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18049483A JPS6074580A (en) | 1983-09-30 | 1983-09-30 | Detecting element for acceleration |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18049483A JPS6074580A (en) | 1983-09-30 | 1983-09-30 | Detecting element for acceleration |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6074580A true JPS6074580A (en) | 1985-04-26 |
Family
ID=16084216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18049483A Pending JPS6074580A (en) | 1983-09-30 | 1983-09-30 | Detecting element for acceleration |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6074580A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1708291A3 (en) * | 2005-03-31 | 2009-04-08 | TDK Corporation | Tunneling effect element and physical quantity to electrical quantity transducer |
-
1983
- 1983-09-30 JP JP18049483A patent/JPS6074580A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1708291A3 (en) * | 2005-03-31 | 2009-04-08 | TDK Corporation | Tunneling effect element and physical quantity to electrical quantity transducer |
| US7743666B2 (en) | 2005-03-31 | 2010-06-29 | Tdk Corporation | Tunneling effect element and physical quantity to electrical quantity transducer |
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