JPS6074543A - Sample temperature measurement by load locking device - Google Patents
Sample temperature measurement by load locking deviceInfo
- Publication number
- JPS6074543A JPS6074543A JP18196483A JP18196483A JPS6074543A JP S6074543 A JPS6074543 A JP S6074543A JP 18196483 A JP18196483 A JP 18196483A JP 18196483 A JP18196483 A JP 18196483A JP S6074543 A JPS6074543 A JP S6074543A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- tray
- thermocouple
- temperature measurement
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
＋１１発明の技術分野
本発明はロードロック式装置の試料温度測定方法、詳し
くは試料を装着する搬送トレイから電極を引き出し試料
の温度測定を行う方法に関する。DETAILED DESCRIPTION OF THE INVENTION +11 Technical Field of the Invention The present invention relates to a method for measuring the temperature of a sample in a load-lock device, and more particularly to a method for measuring the temperature of a sample by pulling out an electrode from a transport tray on which the sample is mounted.
（２）技術の背景
半導体装置の製造においては半導体基板（ウェハ）の如
き試料の熱雰囲気内での処理が頻繁に行われ、そのため
には第１図に正面図で示されるロードロック装置が用い
られる。同図において、１は真空に保たれその内へガス
が流され試料の処理がなされる主反応室、２は試料の出
し入れのため（１）
に設けた予備排気室で、主反応室内を常時真空に維持す
るために試料の出し入れは必ずこの予備排気室内で行わ
れ、また主反応室１と予備排気室２とはゲートバルブ３
で連結され、この方式により試料が大気にさらされるこ
とが防止されている。(2) Background of the technology In the manufacture of semiconductor devices, samples such as semiconductor substrates (wafers) are frequently processed in a thermal atmosphere, and for this purpose a load lock device, shown in the front view in Figure 1, is used. It will be done. In the figure, 1 is the main reaction chamber that is kept in a vacuum and gas is flowed into it to process the sample, and 2 is the preliminary exhaust chamber provided in (1) for loading and unloading the sample. In order to maintain a vacuum, samples must be taken in and out of this preliminary evacuation chamber, and the main reaction chamber 1 and preliminary evacuation chamber 2 are separated by a gate valve 3.
This method prevents the sample from being exposed to the atmosphere.
操作においては、予備排気室内２でステンレス製の被搬
送トレイ （以下には単にトレイと呼称する）４上に基
板の如き試料を装着し、次いでゲートバルブ３を開き、
チェーン５を駆動してローラ６を回し、それによってト
レイ４を主反応室１に移し、ゲートバルブ３を閉じ、試
料に対し所望の処理を実施する。ロードロツタ装置にお
いてかかる真空室は複数設けられている。In operation, a sample such as a substrate is placed on a stainless steel transfer tray (hereinafter simply referred to as a tray) 4 in the preliminary exhaust chamber 2, and then the gate valve 3 is opened.
The chain 5 is driven to rotate the roller 6, thereby transferring the tray 4 to the main reaction chamber 1, closing the gate valve 3, and performing the desired treatment on the sample. A plurality of such vacuum chambers are provided in the load rotter device.
（３）従来技術と問題点
従来ロードロック式装置を用いる試料の処理における試
料温度をモニターする方法は、あらかじめ主反応室内に
熱電対を設定しておき、搬送されてきたトレイに装着さ
れた試料に熱電対を接触させ、バネの力等で熱電対を試
料に接しておしあてることにより温度を測定している。(3) Prior art and problems The conventional method for monitoring sample temperature during sample processing using a load-lock type device is to set a thermocouple in advance in the main reaction chamber, and then attach a thermocouple to the sample mounted on a tray that has been transported. The temperature is measured by placing a thermocouple in contact with the sample and pressing the thermocouple against the sample using the force of a spring.
このとき、接（２）
順位置が不安定で、かつ、接触圧力も不安定であるため
測定温度に誤差が大きいという欠点があった。または上
記に代えて感熱テープ等による測温法があるがリアルタ
イムでの測温が不可能である。At this time, there was a drawback that the contact (2) position was unstable and the contact pressure was also unstable, so there was a large error in the measured temperature. Alternatively, there is a temperature measurement method using a thermosensitive tape or the like instead of the above method, but it is impossible to measure the temperature in real time.
（４）発明の目的
本発明は上記従来の問題点に鑑み、ロードロック装置を
用いる試料の処理において、試料温度測定用の熱電対の
ための特別の電気配線を必要とせず、更には熱電対の取
付けおよび接触が確実に行え、測温が正確になされる方
法を提供することを目的とする。(4) Purpose of the Invention In view of the above conventional problems, the present invention eliminates the need for special electrical wiring for a thermocouple for measuring sample temperature in sample processing using a load lock device. The purpose of the present invention is to provide a method that allows for reliable mounting and contact of the device and for accurate temperature measurement.
（５）発明の構成
そしてこの目的は本発明によれば、試料を装着するトレ
イに温度測定用素子を内蔵し、かつ、該トレイの搬送機
構の支持部を経て電極を取り出し温度測定を行うことを
特徴とするロードロック装置の試料温度測定方法を提供
することによって達成される。(5) Structure and purpose of the invention According to the present invention, a temperature measuring element is built into a tray on which a sample is mounted, and an electrode is taken out through a support part of a conveyance mechanism of the tray to measure temperature. This is achieved by providing a method for measuring sample temperature in a load lock device, which is characterized by:
（６）発明の実施例 以下本発明実施例を図面によって詳説する。(6) Examples of the invention Embodiments of the present invention will be explained in detail below with reference to the drawings.
（３）
第２図に本発明の方法を実施するロードロツタ装置の複
数の真空室の１室分が平面図で示される。(3) FIG. 2 shows a plan view of one of a plurality of vacuum chambers of a load rotor apparatus for carrying out the method of the present invention.
なお第２図において第１図に図示した部分と同じ部分は
同一符号を付して表示する。チェーン５、ローラ６から
なる搬送機構の底部分の支持部は絶縁碍子８によりロー
ドロツタ装置の本体と電気的に絶縁されており、固定部
７から外部へリード線９を取り出し、試料が装着された
トレイ１４からはローラ６との接触を介しリード線９に
よって信号を受ける。In FIG. 2, the same parts as those shown in FIG. 1 are designated by the same reference numerals. The support part at the bottom of the transport mechanism consisting of the chain 5 and rollers 6 is electrically insulated from the main body of the load rotter device by an insulator 8, and the lead wire 9 is taken out from the fixed part 7 and the sample is attached. A signal is received from the tray 14 via the lead wire 9 through contact with the roller 6 .
第３図に本発明の方法の実施に用いるトレイ１４が平面
図で示され、ローラ６に接触するトレイ】４の部分すな
わち電極取出し部１４ａは、絶縁碍子１４ｂによりトレ
イ本体とは電気的に絶縁されている。絶縁碍子１４ｂに
はさまれた測温用素子である熱電対１０が電極取出し部
１４ａに接続されている。FIG. 3 shows a plan view of the tray 14 used to carry out the method of the present invention, and the portion of the tray 4 that contacts the roller 6, that is, the electrode extraction portion 14a, is electrically insulated from the tray body by an insulator 14b. has been done. A thermocouple 10, which is a temperature measuring element sandwiched between insulators 14b, is connected to the electrode extraction portion 14a.
アモルファスシリコン膜を化学気相成長法で試料例えば
ウェハ上に堆積する場合を例にとると、ガスとしてば５
ｉｌｌｐ＋ Ｈ２（またはＡｒ）ガスを用い、ウェハの
温度を２５０℃〜３００℃に保ち、高周波（（４）
ＲＦ）放電を行って３０分程度の処理をなす必要がある
。そのためには試料が装着されたトレイ１４を主反応室
１に入れゲートバルブ３を閉じ、図示しない系統により
トレイ１４が加熱されることによって試料が加熱される
か、またはトレイ１４の上方に配置されたヒータ（図示
せず）によって試料およびトレイ１４が加熱される。い
ずれの場合においても、試料の温度はトレイの温度を測
定することにより検知される。トレイ１４の温度は熱電
対１ｏによって検知され、その温度に関する信号は熱電
対１ｏ、電極取出し部１４ａ、リード９を経て図示しな
い測温装置に送られ、そこで加熱についての指示が出さ
れる。For example, when an amorphous silicon film is deposited on a sample such as a wafer by chemical vapor deposition, if the gas is
It is necessary to perform processing for about 30 minutes using illp+ H2 (or Ar) gas, maintaining the wafer temperature at 250° C. to 300° C., and performing high frequency ((4) RF) discharge. To do this, the tray 14 loaded with the sample is placed in the main reaction chamber 1, the gate valve 3 is closed, and the sample is heated by the tray 14 being heated by a system not shown, or the sample is placed above the tray 14. The sample and tray 14 are heated by a heater (not shown). In either case, the temperature of the sample is sensed by measuring the temperature of the tray. The temperature of the tray 14 is detected by the thermocouple 1o, and a signal related to the temperature is sent via the thermocouple 1o, the electrode extraction part 14a, and the lead 9 to a temperature measuring device (not shown), where an instruction regarding heating is issued.
測温の精度を高めるためにローラ、チェーン等からなる
搬送機構の表面ば熱電対と同質の材料でコーティングす
るとより効果的である。In order to improve the accuracy of temperature measurement, it is more effective to coat the surface of the conveyance mechanism consisting of rollers, chains, etc. with the same material as the thermocouple.
（７）発明の効果
以上詳細に説明した如く本発明によれば、ロードロツタ
装置の試料温度測定方法において、当該装置の搬送機構
をそのまま熱電対からの信号取出（５）
しに利用しているため特別の電気配線を必要とせず、更
に熱電対の接触が確実に行なえるため測温が正確に行な
える効果がある。なお上記においてはウェハの温度測定
を例に説明したが、本発明の適用範囲はその場合に限ら
れるものでなく、その他の試料の場合にも及ぶ。(7) Effects of the Invention As explained in detail above, according to the present invention, in the sample temperature measurement method using a load rotor device, the conveyance mechanism of the device is used as it is to extract the signal from the thermocouple (5). No special electrical wiring is required, and since the thermocouple can be contacted reliably, temperature measurement can be carried out accurately. Note that although the above description has been made using temperature measurement of a wafer as an example, the scope of application of the present invention is not limited to that case, but also extends to the case of other samples.
第１図は従来のロードロック装置の正面図、第２図は本
発明の方法を実施するロードロツタ装置の複数の真空室
の１室の正面図、第３図は第２図の装置に搬入されるト
レイの平面図である。
１−主反応室、２−予備排気室、
３−・・ゲートパルプ、４．１４−）レイ、５−チェー
ン、６−・・ローラ、７−
固定部、８−・絶縁碍子、１〇−熱電対、１４ａ〜・−
電極取出し部、１４ｂ・・・絶縁碍子（６）Fig. 1 is a front view of a conventional load lock device, Fig. 2 is a front view of one of the plurality of vacuum chambers of a load lock device implementing the method of the present invention, and Fig. 3 is a front view of a load lock device carried into the device of Fig. 2. FIG. 1-Main reaction chamber, 2-Preliminary exhaust chamber, 3-...Gate pulp, 4.14-) Ray, 5-Chain, 6-...Roller, 7-Fixing part, 8--Insulator, 10- Thermocouple, 14a~・-
Electrode extraction part, 14b...insulator (6)
Claims (1)
、該トレイの搬送機構の支持部を経て電極を取り出し温
度測定を行うことを特徴とするロードロック装置の試料
温度測定方法。1. A method for measuring a sample temperature in a load lock device, characterized in that a temperature measuring element is built into a tray on which a sample is mounted, and the temperature is measured by taking out an electrode through a support part of a transport mechanism of the tray.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18196483A JPS6074543A (en) | 1983-09-30 | 1983-09-30 | Sample temperature measurement by load locking device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18196483A JPS6074543A (en) | 1983-09-30 | 1983-09-30 | Sample temperature measurement by load locking device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6074543A true JPS6074543A (en) | 1985-04-26 |
Family
ID=16109944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18196483A Pending JPS6074543A (en) | 1983-09-30 | 1983-09-30 | Sample temperature measurement by load locking device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6074543A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62195139A (en) * | 1986-02-21 | 1987-08-27 | Sumitomo Electric Ind Ltd | Substrate temperature measurement and device thereof |
| JPS62237740A (en) * | 1986-04-08 | 1987-10-17 | Agency Of Ind Science & Technol | Method for measuring surface temperature of semiconductor wafer |
| CN110132436A (en) * | 2019-05-24 | 2019-08-16 | 费勉仪器科技（上海）有限公司 | The temperature measuring equipment of sample temperature is accurately measured under a kind of UHV condition |
-
1983
- 1983-09-30 JP JP18196483A patent/JPS6074543A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62195139A (en) * | 1986-02-21 | 1987-08-27 | Sumitomo Electric Ind Ltd | Substrate temperature measurement and device thereof |
| JPS62237740A (en) * | 1986-04-08 | 1987-10-17 | Agency Of Ind Science & Technol | Method for measuring surface temperature of semiconductor wafer |
| CN110132436A (en) * | 2019-05-24 | 2019-08-16 | 费勉仪器科技（上海）有限公司 | The temperature measuring equipment of sample temperature is accurately measured under a kind of UHV condition |
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