JPS6074251A - Secondary electron detecting apparatus - Google Patents

Secondary electron detecting apparatus

Info

Publication number
JPS6074251A
JPS6074251A JP58182025A JP18202583A JPS6074251A JP S6074251 A JPS6074251 A JP S6074251A JP 58182025 A JP58182025 A JP 58182025A JP 18202583 A JP18202583 A JP 18202583A JP S6074251 A JPS6074251 A JP S6074251A
Authority
JP
Japan
Prior art keywords
analog
output
sample
secondary electron
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58182025A
Other languages
Japanese (ja)
Inventor
Akio Ito
昭夫 伊藤
Kazuyuki Ozaki
一幸 尾崎
Toshihiro Ishizuka
俊弘 石塚
Yoshiaki Goto
後藤 善朗
Yasuo Furukawa
古川 泰男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58182025A priority Critical patent/JPS6074251A/en
Publication of JPS6074251A publication Critical patent/JPS6074251A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Measurement Of Radiation (AREA)

Abstract

PURPOSE:To simplify an additional average circuit by irradiating a sample under the operating condition with pulse wise electron beam, analogously adding the secondary electrons through a secondary electron multiplying means and obtaining a digitized detected output. CONSTITUTION:A sample 3 such as an integrated circuit under the operating condition is irradiated with ultra-shortwave electron beam pulse 2a and the secondary electron 4a emitted from the sample 3 is applied to an analog adding means 14 having a small charging time constant and a large discharging time constant through a secondary electron multiplying means consisting of a scintillator 5, a light pipe 6 and a photomultiplier 7. Moreover, an output of the adding means 14 is applied to a load resistance 8 through an analog switch 15 to be controlled by a control circuit 17 and a digital detected signal can be obtained through an A/D converting circuit 16. Therefore, the circuit can be simplified by analogous additional average of the outputs of secondary electron multiplying means and the A/D converting circuit 16 can bae operated at a low speed.

Description

【発明の詳細な説明】 (1) 発明の技術分野 本発明は二次電子検出装置に係り、特に集積回路等の試
料を動作状態として電子ヒームを目利させることで発生
ずる二次電子を検出し7て試(′−1の・1υ」作状態
を検査する検査装置等6、二角いて好適な一1次電子検
出装置に関する。
[Detailed Description of the Invention] (1) Technical Field of the Invention The present invention relates to a secondary electron detection device, and particularly to a device for detecting secondary electrons generated by using an electron beam while a sample such as an integrated circuit is in an operating state. The present invention also relates to a preferred primary electron detection device, such as an inspection device for inspecting the operational state of the trial ('-1.1υ).

(2) 技術の背景 集積化の進んだ高速な[、、S lや超LSI等ではこ
れら集積回路内に集積した回路内のチn/りをスタテッ
クな状態以外にグイナミノクな状態ご検査しなりればな
らない場合が多い。この様な場合に従来では上記したL
SI等の高速動作し−Cいる試料のパッケージ蓋をとり
去って電子ヒーム装置から極短電子ビームパルスを照射
さセている。
(2) Background of the technology In high-speed integrated circuits, ultra-large scale integrated circuits, etc., it is necessary to inspect the internal circuits integrated in these integrated circuits in a detailed state in addition to the static state. In many cases, it is necessary. In such cases, conventionally the above-mentioned L
The package lid of the sample, which operates at high speed such as SI, is removed and an extremely short electron beam pulse is irradiated from the electron beam device.

」二記した電子ビーム装置から照射される極短電子ヒー
ムパルスは試料内部で作動している例えばパルスが所定
間隔で送り込まれるパルス周期と同期したもので一般に
ストロボ法と呼ばれる方法が用いられ、上記作動パルス
に比例した二次電子が放出されるので、該二次電子をシ
ンチレータ、ライ1−パイプ並にフλI−マル等で構成
された二次電子増倍手段に与えて増倍した二次電子を負
荷抵抗にJjえた後にアナ1コグ−デジタル変換回路等
を通してデジタル化した出力を得ていた。
The extremely short electron beam pulse irradiated from the electron beam device described in 2 is synchronized with the pulse cycle that operates inside the sample, for example, pulses are sent at predetermined intervals, and a method called strobe method is generally used. Since secondary electrons proportional to the pulse are emitted, the secondary electrons are given to a secondary electron multiplier consisting of a scintillator, a light pipe, a flame λI-multi, etc., and the secondary electrons are multiplied. After applying it to a load resistance, a digitized output was obtained through an analog-to-digital conversion circuit.

然し、−上記した極短電子ビーj・パルスは高速化され
ノこ作動試IIにソンクl:Iするため数十ナノオーダ
のパルス幅を有するものを照射しなりればならないため
に試料から放出される二次電子の量が極f+it、lに
少なくなりl(固とカー 0.5+固とめ・いうイ直に
なってきていて得られる二次電子のS/Nは極めて悪い
欠点を有する。
However, - the above-mentioned ultrashort electron beam pulse has been sped up and must be irradiated with a pulse width on the order of tens of nanometers in order to perform Sonkl:I in the saw operation test II, so that it is emitted from the sample. The amount of secondary electrons is reduced to f+it,l, and the S/N ratio of the secondary electrons obtained is extremely poor.

(3) 従来技術の問題点 −1−記した問題を解決するための従来の二次電子検出
装置の実施例を第1図の回路について説明す図に於いて
1は電子ヒーム装置の電子銃であり。
(3) Problems of the Prior Art - 1 - In the diagram illustrating the circuit of FIG. 1, which is an example of a conventional secondary electron detection device for solving the above-mentioned problems, 1 is an electron gun of an electron beam device. Yes.

極短電子ヒームパルス2が試料3に照射される。A sample 3 is irradiated with an ultrashort electron beam pulse 2 .

該試料は高速で所要回路か動作し7てい一乙作動パルス
に同期した極短電子ヒームバルスが照射されて、照射ヒ
ームに比例した二次電子4がシンチレータ5に入射され
、ライ1−パイプを介して光に変換された二次電子はツ
メ(・マル7によって増イ(ηされた二次電子がレンチ
レーク5.ライI−バイブロ。
The sample is irradiated with an extremely short electron beam pulse synchronized with the operating pulse while the required circuit is operating at high speed, and secondary electrons 4 proportional to the irradiated beam are incident on the scintillator 5 and passed through the light pipe. The secondary electrons converted to light are multiplied by the claw (・maru 7) and the secondary electrons are lentilake 5.rai I-vibro.

〕Al・マル7で構成された三次電子増倍下段の出力に
取り出される。上記二次電子用イ1η丁段からの出力は
負荷回路を構成する抵抗器8にJヲえられる。
] The electrons are taken out as the output of the lower stage of the tertiary electron multiplier composed of Al/multilayer 7. The output from the secondary electron stage A1 is applied to a resistor 8 constituting a load circuit.

咳1氏抗器8の−・+’+l:lは接地され矢印パノノ
Nilに三次電子増倍出力電流が流れ、該電流に比例し
た電圧降下分の電圧がプリアンプを含む−j′す1:I
グーデジタル変換回路9にりえられて、デジタル変換さ
れた出力はデジタル加算jT7均回路10に5.えられ
て。
-+'+l:l of the cough resistor 8 is grounded, and a tertiary electron multiplication output current flows through the arrow panono Nil, and a voltage drop proportional to this current includes the preamplifier -j': I
The digitally converted output is sent to the digital converter circuit 9 and sent to the digital adder jT7 equalizer circuit 10. I was given a gift.

出力端子11に取り出される。ずなわら極めて少ない二
次電子しか放出されないのを袖1泌するためにデジタル
変換されたLl、I力をデジタル的に加算平均回路10
に加えて加算平均した値を出力端子[1に取り出してい
るが上記加算平均回路が複雑化するたりてなくアナログ
ーテジタル変換回路のヒ/I−数が増大する等の欠点を
生して装置全体がi1′ii価となり現実的でなくなる
弊害を生ずる。
It is taken out to the output terminal 11. In order to ensure that only a very small number of secondary electrons are emitted, an average circuit 10 is used to digitally add and average the digitally converted Ll and I forces.
In addition to this, the averaged value is taken out to the output terminal [1], but this does not complicate the above-mentioned averaging circuit and causes disadvantages such as an increase in the number of H/I in the analog-to-digital conversion circuit. The whole becomes i1'ii value, resulting in an unrealistic problem.

(4) 発明の目的 本発明は上記従来の欠点に鑑の2簡単な回路構成で二次
電子信号のS/Hの向上を計るために二吹電T−増(p
7手段の出力をアナログ的に加算平均した後にアナI:
2グーデジタル変換回路に出力する様にしてアナIコグ
ーデジタル変換回路をも低速動作するようにした二次電
子検出装置を堤供することを目的とするものである。
(4) Purpose of the Invention The present invention solves the above-mentioned drawbacks of the conventional technology by using a two-blow electric T-increase (p
After averaging the outputs of the seven means in an analog way, Ana I:
It is an object of the present invention to provide a secondary electron detection device in which the ana-I-co-digital conversion circuit also operates at low speed by outputting to the 2-digit digital conversion circuit.

(5) 発明の構成 そして」二記目的は本発明によれば試料から放射される
二へ電子を検出する検出手段と、該検出手段の出力を充
電時定数εま小さく放電時定数の大きいアーJ−+:+
グ加算手段に加え、該アナト1グ加算手段で加算された
出力をアナロクスイノチを介して負荷抵抗1段に与え、
該負荷抵抗手段出力をアナログ−デジタル変換手段によ
り加えてう′シタル出力を取り出すようにしてなること
を特徴と−・j“る 次電子検出装置を1に供する、二
とで達成される。
(5) Structure of the Invention According to the present invention, the second object is to provide a detection means for detecting electrons emitted from a sample, and to convert the output of the detection means into an arc having a small charging time constant ε and a large discharging time constant. J-+:+
In addition to the analog adding means, the output added by the analog adding means is applied to one stage of load resistance via an analog input,
The present invention is characterized in that the output of the load resistor means is applied by an analog-to-digital conversion means and an digital output is taken out.

(6) 発明の実施例 以下6本発明の二次電子検出装置を第2図乃至第4し1
についてhイ、記する。
(6) Examples of the invention The following six secondary electron detection devices of the present invention are shown in Figures 2 to 4 and 1.
I will write about it.

第2図は本発明の二次電子検出装置の系統図を示すもの
である。
FIG. 2 shows a system diagram of the secondary electron detection device of the present invention.

同しIに於いて第1図と同一・部分には同・74: +
>H名−付して重複説明を省略する。
In the same I, the same as Figure 1, the same parts are the same. 74: +
>H name- to omit duplicate explanation.

電子銃1から放出された電子ヒームは電子ヒーム装置の
パルヌゲ−1・用電極12を通、って極’15j fl
iイヒーノ、パルス2;」となされ、試$13の動性状
態を検出しようとする回路f)1;分に照射され、I−
配電子パルスは核間1?3に加えられまたは動作し−(
いイ)パルス周期に比例した極めてバjい電子パルス(
あり、試ネ、13からは極短重子パルスに111例し2
人ニー次電子4,1が同しくパルス状にシンチレータ5
Gこ入射され二次電子増倍手段を構成する)Aヒフルア
 −からは増倍した二次電子が取り出される。
The electron beam emitted from the electron gun 1 passes through the electrode 12 of the electron beam device for electrode 15j fl
A circuit trying to detect the dynamic state of test $13 is irradiated for 1 minute and I-
Electron distribution pulses are applied or actuated between internuclear regions 1 to 3 - (
b) An extremely weak electronic pulse proportional to the pulse period (
Yes, there are 111 examples of ultrashort deuteron pulses from 13 onwards, and 2
Human secondary electrons 4 and 1 are also pulsed on the scintillator 5
The multiplied secondary electrons are taken out from the A electron beam (which constitutes the secondary electron multiplier).

尚パルスゲ−1・電極12にはパルスケ−1−駆動回路
13からのデー1〜パルスか与えられて電子ビーノ・は
パルス化される。二次電子増倍手段5.6゜7の出力は
アナz:2グ加、#、平均回路14に加えられる。該ア
リ郵Jグ加算平均回路はダイオードI〕の陰極を二次電
子増倍手段の出力側に接続1−+ 陽極側を充電用のコ
ンデン4J−Cとアナl」グスイソヂ手段+ 5 +7
)Jp点a側に接続され、コンデンジ−C(7) K 
i’4i(,1接地される。
Incidentally, the pulse gate 1 electrode 12 is supplied with data 1 to pulses from the pulse gate 1 drive circuit 13, and the electronic beano is turned into pulses. The output of the secondary electron multiplier 5.6°7 is applied to an analog/average circuit 14. The arithmetic averaging circuit connects the cathode of the diode I to the output side of the secondary electron multiplier means 1-+, and connects the anode side to the charging capacitor 4J-C and the analog means +5 +7
) Connected to JP point a side, condenser C (7) K
i'4i(,1 grounded.

アープ・1コグスイッチ手段15の出力側rzi!子す
には負イij抵抗8の一端が接続されると共にアナログ
−デジタル変換回路]Gに接続され、上記アナロクスイ
、チHf段15とパルスゲ−1・駆動回路13並Gこア
ーノ用Jグーデジタル変換回路16は制御3)1回路1
7によってコン11:I−ルされている。
Output side rzi of Arp 1 cog switch means 15! One end of the negative IJ resistor 8 is connected to the output terminal, and it is also connected to the analog-to-digital conversion circuit. The conversion circuit 16 controls 3) 1 circuit 1
7 is controlled by 11:I-.

上記構成δこ於4.fる動作を第3図及び第4図の波形
図について説明する。
Above configuration δ 4. The operation will be explained with reference to the waveform diagrams of FIGS. 3 and 4.

第3図ia)は試料3の動作クロックを示し、電子銃1
より照射された極短電子ビームパルス2aは第3図(b
)の如くり1」ツクとtnの位相差を以て照射される様
にパルスゲ−1・駆動回路13にJニー、で駆動され、
−]二記し7た照躬極短電了ヒーJ、パルス2aによっ
て試料3からは第3閉1 (clに示ずt、XX仁−次
電子信号4aか放出されてシンチレータ5に人身jされ
る。この際の試料3から放出される二次電子信号はその
時の条件により平均し・\ル値1)3よ幻も極端に大き
い1ノヘルと極端に小さいレヘルのイご号が放出される
Figure 3 ia) shows the operation clock of sample 3, and the electron gun 1
The ultrashort electron beam pulse 2a irradiated by
) is driven by the pulse drive circuit 13 with J knee so that it is irradiated with a phase difference of 1'' and tn,
-] The pulse 2a caused the sample 3 to emit the third electron signal 4a (not shown in cl), and the scintillator 5 caused a human body to be emitted. At this time, the secondary electron signal emitted from sample 3 is averaged according to the conditions at that time. .

上記した二次電子信号は丁次重イ増缶丁段で二次電子が
増倍されてアナ1コグ加算平均回路14のコンデンサC
に矢印へで示す力量の電流を流してコンデンサCを充電
することで第31pl fdlの如くアナログ加算がな
される。」二記アナログ加′!A: ’51ノ均回1/
&はグ・イオードDのために充電時定数&’、l:11
′−’+’;に小さく放電l14定数は非常に大きい。
The above-mentioned secondary electron signal is multiplied by the secondary electrons in the second stage, and the secondary electrons are multiplied by the capacitor C of the analog 1 cog addition and averaging circuit 14.
Analog addition is performed as shown in the 31st pl fdl by charging the capacitor C by flowing a current of the capacity shown by the arrow. ”2 analog addition′! A: '51 uniform rotation 1/
& is the charging time constant &', l:11 for the current D.
'-'+'; and the discharge l14 constant is very large.

この様にコンデンサCに充電されたアナ1−Iり加算信
鴛を読め取るためには第4図ff11〜I+:”Iに小
ず如くなす。すなわち第4図(8)のようにアナ1コク
加算出力19が所定の期間′rΔに達しノこ時点でアナ
1:】グスイノチ手段15をパオン”状態20とすれば
期間TBは読み出し期間となり曲線21で示す様にコン
デンサCの電荷はiθ荷jJ(抗8を通して放電する。
In order to read the signal added to the antenna 1-I charged in the capacitor C in this way, it is necessary to set the signal ff11 to I+:"I as shown in FIG. 4. In other words, as shown in FIG. At this point when the rich addition output 19 reaches the predetermined period 'rΔ, Analyzer 1: ] If the output means 15 is set to the 'PON' state 20, the period TB becomes a read period, and as shown by the curve 21, the charge of the capacitor C is changed to the iθ load. jJ (discharge through resistor 8.

第41D(b+lこ示ずようにコンデンサCの充電電圧
がアナ1゛]グ−デジタル変換回路16に加えられると
第4図(C1に示すように制御111回路17がらシー
ンプリングスト1コープが放電の開始前に人力されてデ
ジタルテータ22が出力される。
41D (b+l) When the charged voltage of the capacitor C is applied to the analog-to-digital conversion circuit 16 as shown in FIG. Before the start of the process, the digital data 22 is manually output.

(7) 発明の効果 本発明は叙」二の如く構成し動作するので加算平均口1
13をデジタル型に比べて極めて簡単になし得るばかり
でなくアナIJグーデジタル変換回路を富ni5動作さ
・已る必要がな(アナ1コグスイッチ手段の一゛′オン
゛時点のめ動作させればよいので設計も極めて容易どな
る。
(7) Effects of the invention Since the present invention is constructed and operates as shown in Section 2,
13 can be done very easily compared to the digital type, and there is no need to operate the analog/IJ/digital converter circuit (the analog/IJ/digital conversion circuit does not have to be operated at the moment when the analog/cog switch means is turned on). It is extremely easy to design.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はiiL来の二二次電子ビーム検出装置の系統図
、第2図は本発明の二次電子ヒーム桧1」刊町行の系統
図7第3図及び第4図は本発明の二次電子検出装置の動
作説明波形図である。 1・・・電子銃、 2.1)・・・極超電子ヒームバル
ス、 3・・・晶氏木1 。 4.4a・・・二次電子、 5・ シンーf−レーク、
 6 ・・ライトパイプ。 7・・・ツメ1〜マル、 5.6.7 ・ 、−次電子
増倍手段、 8・ ・負荷抵抗。 9.16・・・アナログーデンクル変1免IF’jl 
I焔。
Fig. 1 is a system diagram of the secondary electron beam detection device of IIL, and Fig. 2 is a system diagram of the secondary electron beam detection device of the present invention. FIG. 2 is a waveform diagram illustrating the operation of the secondary electron detection device. 1...electron gun, 2.1)...hyperelectron heembulus, 3...Akira Ujiki 1. 4.4a...Secondary electron, 5. Shin-f-rake,
6...Light pipe. 7...Claws 1 to 1, 5.6.7 - -order electron multiplier, 8. - Load resistance. 9.16...Analog-denkle change 1 exemption IF'jl
I flame.

Claims (2)

【特許請求の範囲】[Claims] (1) 試料から放射される二次電子を検出する検出手
段と、該検出手段の出力を充電時定数は小さく放電時定
数の大きいアナ1フグ加算手段に加え該アナログ加算手
段で加算された出力をアナログスイッチを介して負荷抵
抗手段に与え、該負荷抵抗手段出力をアナログ−デジタ
ル変換手段により加えてデジタル出力を取り出すように
してなることを特徴上する二次電子検出装置。
(1) A detection means for detecting secondary electrons emitted from the sample, and an output obtained by adding the output of the detection means to an analog addition means having a small charging time constant and a large discharging time constant, and the analog addition means. What is claimed is: 1. A secondary electron detection device characterized in that the output of the load resistance means is applied to the load resistance means via an analog switch, and the output of the load resistance means is added by an analog-to-digital conversion means to take out a digital output.
(2) 作動状態にある試料にパルス化した電子ヒーム
を照射して上記試料の動作状態に応じた二次電子を放出
させる電子ヒーム装置と、上記試料から放出される二次
電子を増倍する二次電子増倍手段と、上記二次電子増倍
手段からの二次電子を充電時定数は小さく放電時定数の
大きいダイオードと′:1ンデンザに加えてアナログ的
に二次電子に対応する電圧を加算するアナログ加算手段
と、上記アナログ加算手段の出力を負荷抵抗をiff+
Lゾζアナlコグーテジクル変換回路に与えてデジタル
化U7た検出出力を得るだめのアナl’lゲスイノチー
f:段とを有することを特徴とする特許請求の範囲第1
 +lri記載の二次電子検出装置。
(2) An electron beam device that irradiates a sample in an operating state with a pulsed electron beam to emit secondary electrons according to the operating state of the sample, and multiplies the secondary electrons emitted from the sample. A secondary electron multiplier, a diode with a small charging time constant and a large discharging time constant, and a voltage that corresponds to the secondary electrons in an analog manner in addition to a ':1 ndenzer and a secondary electron multiplier. and an analog addition means for adding the output of the analog addition means to a load resistance.
Claim 1, characterized in that it has an analog stage for supplying the L-Zζ-analytic signal to the co-transformer conversion circuit to obtain the digitized detection output.
+Secondary electron detection device described in lri.
JP58182025A 1983-09-30 1983-09-30 Secondary electron detecting apparatus Pending JPS6074251A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58182025A JPS6074251A (en) 1983-09-30 1983-09-30 Secondary electron detecting apparatus

Applications Claiming Priority (1)

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JP58182025A JPS6074251A (en) 1983-09-30 1983-09-30 Secondary electron detecting apparatus

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JPS6074251A true JPS6074251A (en) 1985-04-26

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JP58182025A Pending JPS6074251A (en) 1983-09-30 1983-09-30 Secondary electron detecting apparatus

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