JPS6072217A - Fabrication of thin film - Google Patents
Fabrication of thin filmInfo
- Publication number
- JPS6072217A JPS6072217A JP17807783A JP17807783A JPS6072217A JP S6072217 A JPS6072217 A JP S6072217A JP 17807783 A JP17807783 A JP 17807783A JP 17807783 A JP17807783 A JP 17807783A JP S6072217 A JPS6072217 A JP S6072217A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- cluster
- argon
- deposited
- ionized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）発明の技術分野
本発明は、薄膜形成方法、よシ詳しく述べるならば、真
空蒸着膜の形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a method for forming a thin film, and more specifically, to a method for forming a vacuum-deposited film.
（イ）従来技術と問題点
真空蒸着法によって各種の蒸着物質を基板上へ射突させ
て導電体薄膜、磁性体薄膜、誘電体薄膜、半導体薄膜な
どを形成することができる。そして、結晶基板、アモル
ファス基板あるいはガラス基板上に蒸着中の蒸着物質に
不活性ガス・イオン（Ａｒ＋）を照射することによって
蒸着膜の特性を改善することが知られている。例えば、
ダルマ三つム（Ｇｅ）蒸着膜をガラス基板上に形成する
際に、Ａｒ＋ビーム（１，６５ｋｅｙ）を同時に照射す
ることによって、密着力の向上、均一膜の形成が図れる
（Ｈｉｒｓｃｈ＋Ｅ、Ｈ，ａｎｄ Ｖａｒｇａ、１．に
、 −Ｔｈｅ Ｅｆｆｅｃｔ ｏｆ Ｉｏｎ Ｉｒｒａ
ｄｉ−ａｔｉｏｎ ｏｎ ｔｈｅ Ａｄｈｅｒｅｎｃｅ
ｏｆ Ｇｅｒｍａｎｉｕｍ Ｆｉｌｍｓ、’Ｔｈ１ｎ
５ｏｌｉｄ Ｆｉｌｍｓ、ｖｏｌ、５２．ｎｏ、３＋
ｐｐ、４４５−４５２＋Ａｕｇ、 １９７８．参照）。(a) Prior Art and Problems The vacuum evaporation method allows the formation of conductive thin films, magnetic thin films, dielectric thin films, semiconductor thin films, etc. by injecting various vapor deposition substances onto a substrate. It is known that the characteristics of a deposited film can be improved by irradiating an evaporation material with inert gas ions (Ar+) while it is being deposited on a crystalline substrate, an amorphous substrate, or a glass substrate. for example,
When forming a Ge deposited film on a glass substrate, simultaneous irradiation with Ar+ beam (1,65 key) can improve adhesion and form a uniform film (Hirsch+E, H, and Varga, 1. -The Effect of Ion Irra
di-ation on the Adherence
of Germanium Films,'Th1n
5solid Films, vol, 52. no, 3+
pp, 445-452+Aug, 1978. reference).
しかし彦から、イオンビーム照射によって基板表面およ
び蒸着膜表面に吸着したガスおよび不純物（吸着膜）あ
るいは酸化膜を除去するにはｌ Ｑ ｅＶ以上の射突エ
ネルギがあれば良く、またｋｎｏｃｋ−ｏｎ効果による
形成した蒸着膜の密着性向上を図るには数１００ ｅＶ
以下の射突エネルギで良い。また、ガラス基板などの絶
縁物上に蒸着膜を形成する際に、イオン化したビームに
よって運ばれてくる電荷量は少ないほうが電荷蓄積によ
るトラプ／ｌ／を回避できるので好ましい。However, from Hiko, in order to remove the gases, impurities (adsorbed film), or oxide film adsorbed on the substrate surface and the deposited film surface by ion beam irradiation, it is sufficient to have an impact energy of 1 Q eV or more, and the knock-on effect In order to improve the adhesion of the vapor deposited film formed by
The following impact energy is sufficient. Further, when forming a vapor deposited film on an insulating material such as a glass substrate, it is preferable that the amount of charge carried by the ionized beam be small because trap /l/ due to charge accumulation can be avoided.
（ロ）発明の目的
Ａｒ＋ビームの射突エネルギが数１００ ｅＶ以下でか
つ電荷量が少ない不活性ガス・イオン・ビームを照射し
ながら基板上に蒸着膜を形成する方法を提供することが
本発明の目的である。(b) Purpose of the Invention The present invention provides a method for forming a vapor deposited film on a substrate while irradiating an inert gas ion beam with an Ar+ beam having an impact energy of several 100 eV or less and a small amount of charge. This is the purpose of
に）発明の構成
この目的が、不活性ガス・イオン・ビームに、アルゴン
ガスをクラスタのビームとし、イオン化しかつ加速した
クラスタ・イオン・ビームラ用いることを特徴とする薄
膜形成方法によって達成される。B) Structure of the Invention This object is achieved by a thin film forming method characterized in that an inert gas ion beam is used as a cluster beam of argon gas, and an ionized and accelerated cluster ion beam beam is used.
クラスタとは５００ないし２０００個のガス分子からな
る塊状分子集団であって分子相互は緩く結合しているも
のである。このクラスタをイオン化するには分子を１個
だけプラスにすれば良く、エレクトロン・シャワーによ
って容易にアルゴン・クラスタをイオン化することがで
きる。A cluster is a lumpy molecular group consisting of 500 to 2000 gas molecules, and the molecules are loosely bonded to each other. To ionize this cluster, it is sufficient to make only one molecule positive, and the argon cluster can be easily ionized by an electron shower.
（４）発明の実施態様例
木兄りＪに係る薄膜形成方法では、蒸着物質を従来通ジ
に抵抗加熱、電子ビーム加熱などによって溶解し蒸発さ
せることで基板へ飛着させると同時に、アルゴンガス・
クラスタ・イオン・ビームを基板へ射突させるわけであ
る。このクラスタ・イオン・ビームは、まず、アルゴン
ガスをノズルから高真空中（１０４〜１０７Ｔｏｒｒ
Ｑｆ ） ヘ噴射させることによシアルボンのクラスタ
のビームとし、このクラスタビームをエレクトロン・シ
ャワーによってイオン化することで得られる。このイオ
ン化したアルゴン・クラスタを加速電極（例えば、３ｋ
Ｖ）を用いて加速して基板へ射突させて蒸着中の蒸着膜
に作用させ、蒸着前であれば基板表面を清浄化すること
になる。(4) Examples of Embodiments of the Invention In the thin film forming method according to Kimiori J, the vapor deposition material is melted and evaporated by resistance heating, electron beam heating, etc. in the conventional manner, so that it flies onto the substrate, and at the same time, the argon gas is・
The cluster ion beam is fired into the substrate. This cluster ion beam is produced by first pumping argon gas through a nozzle in a high vacuum (104 to 107 Torr).
Qf ) is injected into a sialbone cluster beam, and this cluster beam is ionized by an electron shower. This ionized argon cluster is transferred to an accelerating electrode (for example, 3k
V) is used to accelerate the vapor and make it collide with the substrate to act on the vapor deposited film during vapor deposition, thereby cleaning the substrate surface before vapor deposition.
Ｑ）発明の効果
本発明に係る薄膜形成方法のアルゴンガス・クラスタ・
イオン・ビームを用いることによって、従来のアルゴン
・イオン・ビームと同様に基板および蒸着膜の清浄化お
よびｋｎｏｃｋ−ｏｎ効果による密着力の向上が図られ
、さらに、低電荷の特色から従来の電荷蓄積を回避する
ことができる。そして、本発明をＩＣなどの半導体装置
の製造、例えば、Ａ、５等め金属薄膜、５ｔＯ２等の絶
縁膜等の薄膜形成に適用するは特に好ましい。Q) Effects of the invention The argon gas cluster of the thin film forming method according to the invention
By using an ion beam, it is possible to clean the substrate and the deposited film in the same way as the conventional argon ion beam, and to improve the adhesion due to the knock-on effect. can be avoided. It is particularly preferable to apply the present invention to the manufacture of semiconductor devices such as ICs, for example, to the formation of thin films such as A, 5 grade metal thin films, and insulating films such as 5tO2.
Claims (1)
を形成する薄膜形成方法において、前記不活性ガス・イ
オンに、アルゴンガスをクラスタのビームとし、イオン
化しかつ加速したクラスタ・イオン・ビームを使用する
ことを特徴とする薄膜形成方法。1. In a thin film forming method in which a deposited film is formed on a substrate while irradiating inert gas ions, argon gas is used as a cluster beam for the inert gas ions, and ionized and accelerated cluster ions are added to the inert gas ions. A thin film forming method characterized by using a beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17807783A JPS6072217A (en) | 1983-09-28 | 1983-09-28 | Fabrication of thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17807783A JPS6072217A (en) | 1983-09-28 | 1983-09-28 | Fabrication of thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6072217A true JPS6072217A (en) | 1985-04-24 |
Family
ID=16042216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17807783A Pending JPS6072217A (en) | 1983-09-28 | 1983-09-28 | Fabrication of thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6072217A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7824741B2 (en) | 2007-08-31 | 2010-11-02 | Micron Technology, Inc. | Method of forming a carbon-containing material |
-
1983
- 1983-09-28 JP JP17807783A patent/JPS6072217A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7824741B2 (en) | 2007-08-31 | 2010-11-02 | Micron Technology, Inc. | Method of forming a carbon-containing material |
| US7964242B2 (en) | 2007-08-31 | 2011-06-21 | Micron Technology, Inc. | Formation of carbon-containing material |
| US8163355B2 (en) | 2007-08-31 | 2012-04-24 | Micron Technology, Inc. | Formation of carbon-containing material |
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