JPS6066842A - Semiconductor device - Google Patents

Abstract

PURPOSE:To easily contain a carrier having good heat dissipation when an IC is fixed to the central portion of a ceramic chip carrier to form a semiconductor device, by providing piers having good heat conductivity in the IC chip carrying section and by providing a metallizing layer on the lower face thereof to be connected to the external cooling means. CONSTITUTION:When a semiconductor chip 3 is fixed on the central surface of a ceramic substrate 1, a multiplicity of piers having a high heat flow density and a low thermal resistance are implanted vertically, while being disposed parallel to one another. A metallizing layer 15 is adhered to the lower faces of these piers for covering the same, and a cooling core 10 having cooling fins 11 is fixed to the layer 15. After a chip 3 is fixed on the carrying section in a cavity 2, the electrode wirings of the chip 3 are connected to the pads 4, external terminals 5, connection terminals 6 or the like with the use of bonding wires 7 as usual, and the chip 3, the pad 4 and so on are covered with a cover 8.

Description

[Detailed description of the invention] fat Invention 1]・1 minute 9! The present invention relates to a semiconductor device, and more particularly to a semiconductor device having a substrate provided with a via having high thermal conductivity as a cooling means for a semiconductor integrated circuit element housed therein.

(El) Technology background As the processing power of electronic devices increases year by year, the semiconductor integrated circuit element (hereinafter referred to as F'IC and includes LSI) itself is developed. 1" 2yl!
The rate of ramie is Ill <nashi).

Furthermore, if the bonding quality fluctuates by a certain amount during operation, the operating point of the element changes and the output level fluctuates, which may lead to malfunction of the electronic circuit. From the perspective of maintaining the stable operation of electronic equipment, such as:

Cooling of semiconductor devices is an urgent issue.

(c+ Conventional technology and problems) Even if the conventional type with a normal Ic ceramic socket, butcher beam, and I terminal, or the leadless chip gear without lead 1" 61:l J", Fig. 1G Semiconductor integrated circuit elements, the so-called semiconductors, are being cultivated in every ceramic industry.

As an example of the prior art, a restino-furyer is shown in a perspective view in FIG. 1 and a side view in FIG. 2. At the bottom of the cavity 2 in the space above the static substrate 1.

A gold-plated semiconductor chip connection part is provided on the metal film formed by metallization.

The semiconductor chip 3 is fixed with solder 4q or other horns lJ.

The bottom surface of the cavity 2 around it 1. X4. '1. ',
4 Bonding pad made of thick film with 4A characteristics, 1
4 are arranged and 1. It is connected to external connection terminals 5 which reach the back surface of the chip substrate 1 through the side surface thereof using a notafing method. Its tip is gold-plated to make it convenient for mounting on a printed circuit board (not shown) using the beam flow method.
ul;, rli Ei. The semiconductor chip 3 and the bonding plate 4 are bonded with a bonding piece 7 made of a thin gold wire. The lid part 8 is a ceramic container for sealing the semiconductor device knob 3.

When such a ceramic chip carrier is mounted on the printed circuit board 1 (not shown), the semiconductor J-no.
It started! :J) is connected to the pudding 1 through the ceramic substrate 1 (for 18 connections between the connection part 6 and the print 1) via the ceramic substrate 1 (not shown). It rests in the lower 11'lA i'i1+ of the substrate, and heat is exchanged therefrom, including, of course, the surface of the ramic chip carrier itself.

1. Even from the surface of the heat conduction diameter 1, as mentioned above, heat is radiated through heat radiation and heat transfer to the air flow. Furthermore, the above-mentioned h9. Various types of heat sinks are installed to make the oak 91 more effective; 1. All kinds of cooling means such as airflow cooling or 41 liquid cooling method are used.

However, the most important thing is to keep the heat 11 (resistance) low in the heat path where the heat flow from the semiconductor chip 3, which is the source of jJ5, to the surroundings is high. TI-j' 10
(Usually copper or aluminum!!
1, etc., or as shown in FIG.
・Insert +:+ into cavity 2 of the chip carrier,
Beyond that, an attempt was made to mount a semiconductor chip 3 on the semiconductor chip 3. 5 due to the difference in thermal expansion coefficient between

The one shown in FIG. 4 is different from the one shown in FIG.
In the example shown in the figure, the structure is complex and the
i, <, 2 + strike 1) 31, had a drawback in handling.

(+Il Purpose of the Invention The present invention has been made in view of the above-mentioned points, and aims to provide a ceramic thousand-knob carrier that has better heat dissipation than conventional ceramic chip carriers and has a lightweight hour wheel structure. It is something.

((41 Constitution of the Invention) The object of the above invention is to
118 In a semiconductor device comprising a semiconductor integrated circuit element housed in a medium heat section, the semiconductor assembly U1 of 1111 is a ceramic, ceramic substrate constituting the ceramic chip carrier.
By using a semi-I housing, which is characterized by providing vias with good thermal conductivity in the part where the circuit elements are mounted, and forming a metallized break that is connected to the external cooling means. , easily achieved.

Before we give a detailed explanation of the current implementation of the invention, there is one in which a via is provided in place of the external connection terminal 5 of the small or one-knob carrier as shown in Figure 1, Figure 3, and Figure 2. Let me tell you something. Packing density is -
・When Ii +rli <na-2 comes, L! As the number of terminals on ceramic chip carriers increases and the pitch between them becomes smaller, external connections i'+(i'+'j'5) are no longer sufficient, and vias are being adopted.

Although not shown in the figure, a via is a conductive material I' that extends from the cavity 2 side of the substrate 1 through the ceramic layer of the substrate and reaches the back surface of the substrate 1. This is a terminal made of ceramic powder mixed with a metal material having a high melting point and an expansion coefficient close to the ceramic powder such as molybdenum or tungsten. Sometimes, it is shaped into a large number of 11 pieces and fired at the same time as the ceramic.The present invention utilizes this structure.

Embodiments of the present invention will be described below with reference to the drawings. Figures 5 and 6 44 Based on the present invention <゛1'
FIG. 2 is a cross-sectional view and a back view showing the structure of an embodiment of a ceramic carrier for a conductive integrated circuit element.

As shown in the cross-sectional view of FIG.
form. This via 14 is different from the via of a current-carrying chip carrier, and the h9. Since the purpose is to dissipate the lost heat to the outside, in order to make the thermal conductivity of the via 14 itself as low as 1ffi, it is necessary to include
It contains a high proportion of metal components.

It is also important to increase the number of particles as much as possible to increase the density. All the vias 14 are connected to a connection part 15 made of a metallized layer on the back surface of the ceramic substrate I. The connecting portion 15 is provided to bond the vias 14 together to the cooling core 10 of the cooling fin 11, and the heat generated in the semiconductor chip 3 is mainly transferred to the CC tear 4.
The cooling fins 11 are reached through the cooling fins 11.

Heat is radiated from here to outside 9B.

Figure 6 is a back view showing the arrangement of via ■4 for easy understanding. This is the expression except for B l 5.

FIG. 7 shows an example in which cooling fins are installed. I
j; cooling core 10 having cooling fins +1 as described in j;
The length is sufficient to bond it to the joint 15 on the back side of the ceramic substrate 1 using the soldering method, and the structure is much simpler and more robust than that shown in FIG. 4.

Note that the ceramic 1000-knob-1'-tria shown in FIG. 7 is a 100-knob carrier having an external connection terminal 5, but it may also be a 1f-knob 4-yaria having a via.
It is also obvious that the lead plate 1'5 can be applied to any ceramic chip carrier.

Additionally, it goes without saying that it would be more effective if the group of via holes shown in FIG. No, but I'm real! I.

2. Since the contraction rate of the metal powder molded body of tungsten, molybdenum, etc. mentioned above and the ceramic powder molded body at the time of firing is significantly different, it is difficult to realize it.

Therefore, in the present invention, a large number of vias I4 are assembled.

(g+ Effects of the Invention) As is clear from the explanation in Part 2, the ceramic thousand-knob carrier according to the present invention has 21 conductors and 1/8 J
L: When the element is mounted, the polygons generated in the element are not passed through a ceramic substrate or the like having low thermal conductivity.

The generated heat can be directly guided and cooled through a group of vias with low thermal conductivity, so it is possible to improve production stability and quality of the semiconductor integrated circuit device. In addition, this type of structure has the advantage of being simpler and more robust than conventional examples, and can reduce cost.

[Brief explanation of drawings]

Figures 1 and 2 are perspective views and cross-sectional views showing an example of the structure of a conventional leadless chip carrier, and Figures 3 and 4 are cross-sectional views showing an example of the cold LI+ structure of a conventional leadless chip carrier. , FIG. 5 and (FIG. 1 shows the structure of an embodiment of the ceramic chip carrier according to the present invention). It is a cross-sectional view showing an example of mounting a cooling means on an embodiment of the carrier. The bonding vane 1.5 is the connection terminal for the outer 111, 6 is the connection part, 7 is the bonding ring 1., 8 is Mt'!B, 9. 15 is the connection g++ of the metallizing layer, and to is the cooling core. , 11
3 is a dark blue part, and 14 is a via, respectively. 114th 6th 3Δ 110th Fig. 2 *Os 4 + (1

Claims (1)

[Claims] A semiconductor device (
1゛It is a semiconductor device that stores i/& element r once.
(111 of the ceramic cutter knob substrate constituting the ceramic chip carrier) A via with good conductivity is provided in the area where the semiconductor integrated circuit element is mounted, and a metallizing layer is formed to be connected to an external cooling means. A semiconductor device characterized by: