JPS6066043U - Amorphous semiconductor solar cell - Google Patents

Amorphous semiconductor solar cell

Info

Publication number
JPS6066043U
JPS6066043U JP15752983U JP15752983U JPS6066043U JP S6066043 U JPS6066043 U JP S6066043U JP 15752983 U JP15752983 U JP 15752983U JP 15752983 U JP15752983 U JP 15752983U JP S6066043 U JPS6066043 U JP S6066043U
Authority
JP
Japan
Prior art keywords
amorphous semiconductor
electrode
solar cell
transparent electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15752983U
Other languages
Japanese (ja)
Inventor
俊雄 三宿
英世 飯田
Original Assignee
太陽誘電株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 太陽誘電株式会社 filed Critical 太陽誘電株式会社
Priority to JP15752983U priority Critical patent/JPS6066043U/en
Publication of JPS6066043U publication Critical patent/JPS6066043U/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図と第2図は、この考案の各実施例を示す斜視説明
図、第3図と第4図は、この考案の各実施例とその比較
例における特性曲線を示す図表である。 1・・・基板、2・・・透明電極、3・・・半導体層、
4・・・金属電極、5・・・集電電極。 第31!1 ―、υ −2,03040 第4f!1
1 and 2 are perspective explanatory views showing each embodiment of this invention, and FIGS. 3 and 4 are charts showing characteristic curves of each embodiment of this invention and a comparative example thereof. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Transparent electrode, 3... Semiconductor layer,
4... Metal electrode, 5... Current collecting electrode. 31st!1 -, υ -2,03040 4thf! 1

Claims (1)

【実用新案登録請求の範囲】 1 太陽光の入射側となる一方の電極を透明電極とした
一対の電極でp形とn形のドープ層を含む非晶質半導体
層を挟み、これら積層物を基板上で直列に接続し、これ
ら直列接続における末端の電極を負荷側に接続すること
により、太陽光の照射により同半導体層に発生する電力
を上記末端の電極から取り出すようにした非晶質半導体
太陽電池において、出力電流を取り出す末端の透明電極
の長手方向に沿って、金属製の集電電極を接合し、この
集電電極を介して上記透明電極を負荷側に接続するよう
にしたことを特徴とする非晶質半導体太陽電池。 2 透明電極の長辺に沿って半導体の未積層部分を作り
、この上に金属膜を形成して集電電極を作製した実用新
案登録請求の範囲第1項記載の非晶質半導体太陽電池。 3 予め基板の上に金属膜を形成して集電電極を作製し
、同電極を覆うようその上に透明な導電体膜を形成して
透明電極を作製した実用新案登録請求の範囲第1項記載
の非晶質半導体太陽電池。 4 基板の上に透明な導電体膜を形成し、その上の一部
に金属膜を形成して集電電極を作成し、さらにこの上に
透明な導電体膜を積層することにより、透明電極で上記
集電電極をサンドインチ状に挟んで接合した実用新案登
録請求の範囲第1項記載の非晶質半導体太陽電池。
[Claims for Utility Model Registration] 1. An amorphous semiconductor layer including p-type and n-type doped layers is sandwiched between a pair of electrodes, one of which is a transparent electrode on the sunlight incident side, and these laminates are An amorphous semiconductor that is connected in series on a substrate, and the terminal electrodes of these series connections are connected to the load side, so that the power generated in the semiconductor layer by sunlight irradiation is extracted from the terminal electrodes. In solar cells, a metal collector electrode is bonded along the length of the terminal transparent electrode from which output current is taken out, and the transparent electrode is connected to the load side via this collector electrode. Characteristics of amorphous semiconductor solar cells. 2. The amorphous semiconductor solar cell according to claim 1, which has been registered as a utility model, wherein a non-laminated portion of the semiconductor is formed along the long side of the transparent electrode, and a metal film is formed thereon to prepare a current collecting electrode. 3. Scope of Utility Model Registration Claim 1, in which a metal film is formed on a substrate in advance to produce a current collecting electrode, and a transparent conductor film is formed thereon to cover the same electrode to produce a transparent electrode. The amorphous semiconductor solar cell described above. 4. A transparent conductor film is formed on a substrate, a metal film is formed on a part of the substrate to create a current collecting electrode, and a transparent conductor film is further laminated on top of this to create a transparent electrode. The amorphous semiconductor solar cell according to claim 1, wherein the collector electrodes are sandwiched and bonded in a sandwich-like manner.
JP15752983U 1983-10-12 1983-10-12 Amorphous semiconductor solar cell Pending JPS6066043U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15752983U JPS6066043U (en) 1983-10-12 1983-10-12 Amorphous semiconductor solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15752983U JPS6066043U (en) 1983-10-12 1983-10-12 Amorphous semiconductor solar cell

Publications (1)

Publication Number Publication Date
JPS6066043U true JPS6066043U (en) 1985-05-10

Family

ID=30347283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15752983U Pending JPS6066043U (en) 1983-10-12 1983-10-12 Amorphous semiconductor solar cell

Country Status (1)

Country Link
JP (1) JPS6066043U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8766311B2 (en) 2011-02-24 2014-07-01 Kabushiki Kaisha Toshiba Semiconductor light emitting device and light emitting apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8766311B2 (en) 2011-02-24 2014-07-01 Kabushiki Kaisha Toshiba Semiconductor light emitting device and light emitting apparatus

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