JPS606542B2 - Manufacturing method of hermetically sealed body - Google Patents

Manufacturing method of hermetically sealed body

Info

Publication number
JPS606542B2
JPS606542B2 JP54078543A JP7854379A JPS606542B2 JP S606542 B2 JPS606542 B2 JP S606542B2 JP 54078543 A JP54078543 A JP 54078543A JP 7854379 A JP7854379 A JP 7854379A JP S606542 B2 JPS606542 B2 JP S606542B2
Authority
JP
Japan
Prior art keywords
eyelet
glass
eyelets
manufacturing
sealed body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54078543A
Other languages
Japanese (ja)
Other versions
JPS562660A (en
Inventor
孝一 薦田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Home Electronics Ltd
Original Assignee
NEC Home Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Home Electronics Ltd filed Critical NEC Home Electronics Ltd
Priority to JP54078543A priority Critical patent/JPS606542B2/en
Publication of JPS562660A publication Critical patent/JPS562660A/en
Publication of JPS606542B2 publication Critical patent/JPS606542B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/045Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Joining Of Glass To Other Materials (AREA)
  • Chemically Coating (AREA)

Description

【発明の詳細な説明】 【1’この発明の利用分野 この発明は、表面に無電鱗ニッケルメッキ層を形成した
アイレットを用いて、アィレツト内に少なくともガラス
を気密に封着すると同時に、アィレットの外側に他の金
属部材をロウ付けする気密封着体の製造方法に関する。
Detailed Description of the Invention [1' Field of Application of the Invention This invention uses an eyelet having an electroless scale nickel plating layer formed on its surface to hermetically seal at least glass inside the eyelet, and at the same time seals the outside of the eyelet. The present invention relates to a method of manufacturing an airtightly sealed body in which another metal member is brazed to the body.

さらに詳細には、アィレツト内にガラスを介してリード
線を気密絶縁的に封着するとともに、アィレットの外側
に銅製のステム基板または放熱板をロウ付けする半導体
装置用ステムの製造方法に関する。‘2i 従来技術 大電力用のパワートランジスタ等の半導体装置用ステム
として第1図および第2図に示す構造のものがある。
More specifically, the present invention relates to a method of manufacturing a stem for a semiconductor device, in which a lead wire is hermetically and insulatively sealed inside an eyelet via glass, and a copper stem substrate or a heat sink is brazed to the outside of the eyelet. '2i Prior Art As a stem for a semiconductor device such as a power transistor for high power use, there is a structure shown in FIGS. 1 and 2.

図において、1は鋼製のステム基板で、長手方向の両端
部に放熱フィン等に固着するための取付孔2,2と、溶
接リング固着用の環状溝3と、環状溝3内の偏心した位
置にアイレット競合用の透孔4,4とを有する。5,5
は前記透孔4,4に鉄合されロウ付けされている鉄製の
アイレツトで、アイレツト5,5内にはガラス6,6を
介してリード線7,7が気密絶縁的に封着されている。
In the figure, 1 is a steel stem board, which has mounting holes 2, 2 at both longitudinal ends for fixing to heat dissipation fins, etc., an annular groove 3 for fixing a welding ring, and an eccentric groove in the annular groove 3. It has through holes 4, 4 for eyelet competition at the positions. 5,5
is an iron eyelet which is iron-fitted and brazed to the through holes 4, 4, and lead wires 7, 7 are hermetically and insulatively sealed in the eyelets 5, 5 via glasses 6, 6. .

8は前記環状溝3にロウ付けされた鉄製の溶接リングで
ある。
8 is an iron welding ring brazed to the annular groove 3.

従来、この種のステムは次のようにして製造されていた
Conventionally, this type of stem has been manufactured as follows.

まず、アィレット5内にガラス6を介してリード線7を
気密絶縁的に封着した気密様子を製造する。この気密端
子を透孔4,4に鉄合するとともに、環状溝3内に溶接
リング8を挿入し、各アィレット5,5の周囲および溶
接リング8の周囲に環状の銀ロウを配置し、全体を加熱
して各銀ロゥを溶融せしめて、各アィレット5,5をス
テム基板1にロゥ付けするとともに、溶接リング8を環
状溝3にロウ付けして製造していた。しかしながら、こ
のような製造方法では、気密端子を製造するためのガラ
ス封着用加熱工程と、銀ロゥ付けのためのロウ付け用加
熱工程とが必要になり、工程数が増大して加工費が高く
なるのみならず、ガラス封着用加熱工程とロウ付け用加
熱工程とは作業温度が異なっているので、別々の加熱炉
が必要で設備費も嵩むという問題点があった。そこで、
予めアィレット5,5の表面に厚さが20仏程度の無電
解ニッケルメッキ層を形成しておき、このアィレット5
,5を透孔4,4に鉄合し、下面側からかしめ加工して
仮固定したのち、グラフアィト製の封着治具を用いて、
アィレット5,5内にガラスタブレットを挿着し、さら
にこのガラスタブレットを貫通してリード線7,7を配
置し、また環状溝3内にも同様に表面に厚さが20仏程
度の無電解ニッケルメッキ層を形成した溶接リング8を
挿入配置し、全体を加熱することにより、前記ガラスタ
ブレットを溶融して、アィレット5,5にガラス6,6
を介してリード線7,7を気密絶縁的に封着するととも
に、アィレット5,5および溶接リング8の表面の無電
解ニッケルメッキ層を溶融して、アイレット5,5およ
び溶接リング8をステム基板1にロウ付けする方法が提
案されている。
First, an airtight state is manufactured in which the lead wire 7 is hermetically and insulatively sealed inside the eyelet 5 through the glass 6. This airtight terminal is iron-fitted to the through holes 4, 4, a welding ring 8 is inserted into the annular groove 3, and an annular silver solder is placed around each eyelet 5, 5 and around the welding ring 8, and the whole The silver solder was heated to melt each silver solder, and the eyelets 5 were soldered to the stem substrate 1, and the welding ring 8 was soldered to the annular groove 3. However, such a manufacturing method requires a heating process for glass sealing to manufacture an airtight terminal and a heating process for brazing silver soldering, which increases the number of processes and increases processing costs. In addition, since the heating process for glass sealing and the heating process for brazing have different operating temperatures, separate heating furnaces are required, leading to an increase in equipment costs. Therefore,
An electroless nickel plating layer with a thickness of about 20 mm is formed on the surfaces of the eyelets 5, 5 in advance, and the eyelets 5
, 5 into the through holes 4, 4, and temporarily fixed by caulking from the bottom side, using a graphite sealing jig,
Glass tablets are inserted into the eyelets 5, 5, lead wires 7, 7 are placed through the glass tablets, and an electroless film with a thickness of about 20 mm is also placed on the surface of the annular groove 3. By inserting and arranging the welding ring 8 on which a nickel plating layer has been formed and heating the whole, the glass tablet is melted, and the glass tablets 6, 6 are attached to the eyelets 5, 5.
At the same time, the electroless nickel plating layer on the surface of the eyelets 5, 5 and welding ring 8 is melted to connect the eyelets 5, 5 and welding ring 8 to the stem board. 1 has been proposed.

このような製造方法によれば、一回の加熱工程でガラス
封着とロウ付けとが同時に行なえるので、製造工数が著
しく削減できるとともに、設備費も安くなるという利点
を有する。
According to such a manufacturing method, glass sealing and brazing can be performed at the same time in a single heating process, which has the advantage of significantly reducing manufacturing man-hours and lowering equipment costs.

しかしながら、このような方法によると、必然的に第3
図に示すように、アィレツト5とガラス6との封着界面
に無電解ニッケルメッキ層が溶接したリンを含むニッケ
ルロウ層9が介在されることになり、アィレット5とガ
ラス6との封着性が阻害され、気密性が劣化したり、封
着強度が弱いために耐衝撃試験でガラス6がアィレツト
5から脱落したりしやすいという新たな問題点に遭遇す
る。このような問題点を解決するためには、例えばアィ
レット5の外表面にのみ無電鱗ニッケルメッキ層を形成
することも考えられるが、部分メッキは非常に煩雑であ
り、前述の利点が相殺されてしまう。
However, according to such a method, the third
As shown in the figure, a phosphorous-containing nickel brazing layer 9 to which an electroless nickel plating layer is welded is interposed at the sealing interface between the eyelet 5 and the glass 6, thereby improving the sealing properties between the eyelet 5 and the glass 6. A new problem arises in that the glass 6 tends to fall off the eyelet 5 during an impact test because the airtightness deteriorates and the sealing strength is weak. In order to solve these problems, it is conceivable to form an electroless nickel plating layer only on the outer surface of the eyelet 5, but partial plating is very complicated and the above-mentioned advantages are offset. Put it away.

【3’この発明の目的 従って、この発明の主な目的は、この種のァィレット内
に少なくともガラスを封着すると同時にアィレットの外
側に他の金属部材をロゥ付けする気密封着体の製造方法
において、部分メッキ法によることなく、アイレットの
内側のロウ層の厚さを十分に薄くできる気密封着体の製
造方法を提供することである。
[3'Object of the Invention Accordingly, the main object of the present invention is to provide a method for manufacturing an airtight sealed body in which at least glass is sealed within the airlet of this type and at the same time other metal members are brazed to the outside of the airt. An object of the present invention is to provide a method for producing an airtightly sealed body in which the thickness of a wax layer inside an eyelet can be made sufficiently thin without using a partial plating method.

‘4} この発明の総括的説明 この発明は、要約すると、ァィレットの内壁面に少なく
とも一つの段部を設けて全面に無電解ニッケルメッキ層
を形成し、従来と同様にガラス封着と。
'4} General Description of the Invention To summarize, the present invention provides at least one step on the inner wall surface of the airlet, forms an electroless nickel plating layer on the entire surface, and performs glass sealing as in the conventional method.

ウ付けと同時に実施することにより、前記無電藤ニッケ
ルメッキ層が溶融した際に、溶融したロウ材が表面張力
によって段部に凝集して残余部のロウ層の厚さが薄くな
ることを利用して、アィレツトとガラスとの封着性を改
善し、封着強度および耐衝撃性の向上を図ることを特徴
とする。{5ー 実施例この発明の上述の目的およびそ
の他の目的と特徴は、以下に図面を参照して行なう詳細
な説明から一層明らかとなろう。
By performing this at the same time as soldering, when the electroless nickel plating layer melts, the molten brazing material aggregates at the step part due to surface tension, and the thickness of the remaining brazing layer becomes thinner. The present invention is characterized in that it improves the sealing properties between the eyelet and the glass, and improves the sealing strength and impact resistance. {5- Embodiments The above objects and other objects and features of the present invention will become more apparent from the detailed description given below with reference to the drawings.

第4図はこの発明の製造方法によって製造された第1の
実施例の半導体装置用ステムの平面図で、第5図は第4
図のV−V線に沿う縦断面図であり、さらに第6図は第
5図の要部拡大縦断面図である。
FIG. 4 is a plan view of the stem for a semiconductor device of the first embodiment manufactured by the manufacturing method of the present invention, and FIG.
FIG. 6 is a vertical sectional view taken along the line V-V in the figure, and FIG. 6 is an enlarged vertical sectional view of the main part of FIG. 5.

この実施例の特徴は、鉄製のアィレット5,5と鉄製の
溶接リング8とを一体にプレス成型したアイレツト リ
ング10を用い、アイレツト5,5の下端内壁面に段部
51,51を形成したものである。他は第1図および第
2図と同様であるため、同一部分に同一参照符号を付し
て、その説明を省略する。次にその製造方法について説
明すると、まず、アィレット5,5と溶接リング8とが
一体となり、しかもァィレット5,5の下端内壁面に段
部51,51を有するアィレット リング10を製作し
、その表面に厚さが20払程度の無電鱗ニッケルメッキ
層を形成する。
The feature of this embodiment is that an eyelet ring 10 is formed by integrally press-molding iron eyelets 5, 5 and an iron welding ring 8, and step portions 51, 51 are formed on the inner wall surface of the lower end of the eyelets 5, 5. It is. Since the other parts are the same as those in FIGS. 1 and 2, the same parts are given the same reference numerals and the explanation thereof will be omitted. Next, the manufacturing method will be described. First, an eyelet ring 10 is manufactured in which the eyelets 5, 5 and the welding ring 8 are integrated, and which has stepped portions 51, 51 on the inner wall surface of the lower end of the eyelets 5, 5. An electroless nickel plating layer having a thickness of about 20 mm is formed on the surface.

このアィレット リング10のァィレット5,5をステ
ム基板1の透孔4,4内に鉄合し、グラフアイト製の封
着拾具を用いて、アィレット5,5内に封着ガラスの微
粉末をプレス成型し競結してなるガラスタブレットを挿
入し、このガラスタブレットを貫通してリード線7,7
を挿通して、全体を中性または弱還元性雰囲気中で約1
000℃に加熱する。すると、ガラスタブレットが溶融
してアィレツト5,5にガラス6,6を介してリード線
7,7が気密絶縁的に封着されるとともに、アィレツト
リング10の表面の無電鱗ニッケルメッキ層が溶融し
たロウ材によってアィレット5,5および溶接リング8
がステム基板1に気密にロウ付けされる。ところで、ア
ィレット5,5の内壁面に段部51,51が形成されて
いると、その表面の無電鱗ニッケルメッキ層が溶融した
際、溶融ロウ材が表面張力によって段部51,51の隅
部に凝集する。このため、アィレット5,5の内壁面の
ロウ層91の厚さが外壁面のロウ層92よりも十分薄く
なり、アィレット5,5とガラス6,6との封着性が改
善されて、封着強度換言すれば耐衝撃性が向上する。な
お、この実施例のように、アィレット5,5と溶接リン
グ8とを一体にプレス成型すると、プレス成型の材料利
用率が向上するのみならず、部品点数が減少し、アィレ
ット5,5の透孔4,4への鉄合と溶接リング8との位
置決めが同時に行なえ、しかも、ステム基板1とアィレ
ツト5,5とのかしめ加工の省略も可能であるため組立
加工費も減少するで、原価低減も可能である。
The eyelets 5, 5 of the eyelet ring 10 are fitted into the through holes 4, 4 of the stem substrate 1, and fine powder of sealing glass is inserted into the eyelets 5, 5 using a sealing pick made of graphite. A press-molded and bonded glass tablet is inserted, and the lead wires 7, 7 are passed through the glass tablet.
The whole body is heated for about 1 hour in a neutral or weakly reducing atmosphere.
Heat to 000°C. Then, the glass tablet melted and the lead wires 7, 7 were hermetically and insulatively sealed to the eyelets 5, 5 via the glasses 6, 6, and the electroless scale nickel plating layer on the surface of the eyelet ring 10 melted. Eyelets 5, 5 and welding ring 8 by brazing metal
is hermetically soldered to the stem substrate 1. By the way, if the step portions 51, 51 are formed on the inner wall surfaces of the eyelets 5, 5, when the electroless scale nickel plating layer on the surface melts, the molten brazing material will bend to the corners of the step portions 51, 51 due to surface tension. agglomerates into Therefore, the thickness of the wax layer 91 on the inner wall surface of the eyelets 5, 5 becomes sufficiently thinner than the wax layer 92 on the outer wall surface, and the sealing property between the eyelets 5, 5 and the glasses 6, 6 is improved. In other words, impact resistance is improved. Note that when the eyelets 5, 5 and the welding ring 8 are integrally press-molded as in this embodiment, not only the material utilization rate of the press-molding is improved, but the number of parts is reduced, and the transparency of the eyelets 5, 5 is reduced. The iron joints to the holes 4, 4 and the positioning of the welding ring 8 can be done at the same time, and the caulking process between the stem board 1 and the eyelets 5, 5 can be omitted, which reduces assembly processing costs, reducing costs. is also possible.

また、ァィレット5,5をステム基板1の透孔4,4に
舷合することによって、溶接リング8の位置決めが自動
的に行なえるので、第1図および第2図に示す溶接リン
グ8の位置決め用の環状溝3も不要になり、ステム基板
1のプレス型が簡単となり、さらに原価低減が可能であ
る。また、段部51,51は必ずしもアイレツト内壁面
と直角状のものでなくともよい。
Furthermore, by fitting the airlets 5, 5 into the through holes 4, 4 of the stem base plate 1, the positioning of the welding ring 8 can be automatically performed. The annular groove 3 is also no longer necessary, the press mold of the stem substrate 1 is simplified, and the cost can be further reduced. Furthermore, the stepped portions 51, 51 do not necessarily have to be perpendicular to the inner wall surface of the eyelet.

次に具体的な実施例について説明する。Next, specific examples will be described.

1 メッキ厚変動試験 第4図および第5図に示すように、アイレット5,5と
溶接リング8とが一体に成型された構成で、アィレット
5,5の外径が6.6側め、内径が3側◇で下端内壁面
に段部がなくこの発明によらないアイレツト リングと
、その下端内壁面に0.5豚の段部51,51を有する
この発明によるアイレツト リングとを用いて、内外表
面に所定厚さの無電解ニッケルメッキ層を形成し、先に
述べたと同一の方法によって半導体装置用ステムを製造
し、アイレツト5,5の内外面のロウ層91,92の厚
さを測定したところ次表の結果が得られた。
1 Plating thickness variation test As shown in Figures 4 and 5, the eyelets 5, 5 and the welding ring 8 are integrally molded, and the outer diameter of the eyelets 5, 5 is on the 6.6 side, and the inner diameter is on the 6.6 side. By using an eyelet ring which is not according to the present invention and has no stepped portion on the inner wall surface of the lower end with ◇ on the 3 side, and an eyelet ring according to the present invention which has stepped portions 51, 51 of 0.5 mm on the inner wall surface of the lower end, An electroless nickel plating layer of a predetermined thickness was formed on the surface, and a stem for a semiconductor device was manufactured by the same method as described above, and the thicknesses of the wax layers 91 and 92 on the inner and outer surfaces of the eyelets 5 and 5 were measured. The results shown in the table below were obtained.

ここで、内壁面および外壁面とも初期の無電鱗ニッケル
メッキ厚に対して、封着およびロウ付け後のロウ層の厚
さが減少するのは、溶融したロウ材がアィレットの結晶
粒界に侵入する結果であり、また内壁面のロウ層の厚さ
が外壁面のロウ層より薄くなるのは、内壁面のロウ層は
溶融したガラスによって押圧され、かつアィレット5,
5とステム基板1との界面のロウ材に引き寄せられるた
めである。
The reason why the thickness of the solder layer after sealing and brazing decreases compared to the initial electroless nickel plating thickness on both the inner and outer wall surfaces is because the molten brazing material invades the grain boundaries of the eyelet. This is because the wax layer on the inner wall surface is thinner than the wax layer on the outer wall surface because the wax layer on the inner wall surface is pressed by the molten glass and the eyelet 5,
This is because they are attracted to the brazing material at the interface between 5 and the stem substrate 1.

気密性試験および耐衝撃試験 各無電鱗ニッケルメッキ層の厚さ毎に100個ずつの半
導体装置用ステムを製造し、気密性試験を行なったとこ
ろ、特に差は認められなかった。
Airtightness Test and Shock Resistance Test When 100 stems for semiconductor devices were manufactured for each thickness of the electroless scale nickel plating layer and an airtightness test was conducted, no particular difference was observed.

また、気密性試験を行なった後、リード線7の軸方向に
15夕のオモリをlmの高さから落下させて気密不良が
発生する回数をチェックし、気密不良発生率が50%を
越える回数を調べて耐衝撃性試験を行なったところ、次
表の結果が得られた。
In addition, after conducting the airtightness test, we dropped a 15-meter weight in the axial direction of the lead wire 7 from a height of 1 m to check the number of times airtightness failures occur, and the number of times the airtightness failure occurrence rate exceeds 50%. When we conducted an impact resistance test, we obtained the results shown in the table below.

第7図はこの発明によって製造した他の実施例の半導体
袋贋用ステムの要部拡大縦断面図を示す。
FIG. 7 shows an enlarged vertical cross-sectional view of a main part of a stem for semiconductor bag counterfeiting according to another embodiment of the present invention.

この実施例の特徴は、アィレツト5,5の内壁面の高さ
方向の中心部に段部52,52を形成したものである。
この実施例の場合には、段部52,52上下両隅部で溶
融ロウ材の凝集が起り、アィレツト5,5の内壁面のロ
ウ層91の厚さがさらに薄くなり、より優れた効果が得
られる。第8図はこの発明によって製造されたさらに他
の実施例の半導体装置用ステムの縦断面図を示す。この
実施例は第1図および第2図に示す構成のステムにこの
発明を実施したもので、第6図と同様にアィレット5,
5の下端内壁面に段部51,51を形成したものである
。なお、この実施例においても、第7図と同様にアイレ
ツト5,5の高さ方向の中央部に段部52,52を形成
してもよい。第9図はこの発明によって製造されたさら
に他の実施例の半導体装置用ステムの平面図を示し、第
10図は第9図のX−X線に沿う縦断面図を示す。図に
おいて、11は鉄製のフランジで、長手方向の両端に放
熱フィン等への取付孔12,12と、中央部に放熱板隊
合用の丸孔13とを有する。14は銅製の放熱板で、前
記丸孔13に藤合されてロゥ付けされており、偏心した
位置にアィレット隊合用の透孔15,15を有する。
A feature of this embodiment is that stepped portions 52, 52 are formed at the center of the inner wall surfaces of the eyelets 5, 5 in the height direction.
In the case of this embodiment, agglomeration of the molten brazing material occurs at both the upper and lower corners of the step portions 52, 52, and the thickness of the brazing layer 91 on the inner wall surfaces of the eyelets 5, 5 becomes even thinner, resulting in a more excellent effect. can get. FIG. 8 shows a longitudinal sectional view of a stem for a semiconductor device according to still another embodiment of the present invention. In this embodiment, the present invention is applied to a stem having the structure shown in FIGS. 1 and 2, and the eyelet 5,
Step portions 51, 51 are formed on the inner wall surface of the lower end of 5. In this embodiment as well, step portions 52, 52 may be formed at the center portions of the eyelets 5, 5 in the height direction, as in FIG. FIG. 9 shows a plan view of a stem for a semiconductor device according to still another embodiment of the present invention, and FIG. 10 shows a longitudinal sectional view taken along the line X--X in FIG. 9. In the figure, reference numeral 11 denotes an iron flange, which has mounting holes 12, 12 at both ends in the longitudinal direction for attaching heat radiating fins, etc., and a round hole 13 for assembling a heat radiating plate in the center. Reference numeral 14 denotes a heat sink made of copper, which is brazed to the round hole 13 and has through holes 15, 15 at eccentric positions for forming eyelet formations.

16,16は前記透孔15,15に競合されてロウ付け
されている鉄製のアィレツトで、このアイレット16,
16内にガラス17,17を介してリード線18,18
が気密絶縁的に封着されている。
Reference numerals 16 and 16 indicate iron eyelets that are brazed to the through holes 15 and 15, and these eyelets 16 and
Lead wires 18, 18 are inserted into the inside of the glass 17, 17 through the glasses 17, 17.
is sealed in an airtight and insulating manner.

ここで、アィレット16,16の下端内壁面には、第5
図と同様に段部51,51が形成されている。次に、そ
の製造方法について説明する。
Here, on the inner wall surface of the lower end of the eyelets 16, 16, a fifth
Step portions 51, 51 are formed similarly to the figure. Next, the manufacturing method will be explained.

まず、フランジ11およびアィレット16,16の表面
に厚さが20仏程度の無電鮫ニッケルメッキ層を形成し
、フランジー1の丸孔13に放熱板14を鉄合し、また
放熱板14の透孔15,15にアィレット16,16を
接合し、それぞれの鉄合部分をかしめ加工して仮固定し
たのち、グラフアイト製の封着袷具を用いて、アイレツ
ト16,16内にガラスタブレットを挿入し、ガラスタ
ブレットにリード線18,18を挿通して、前述と同一
条件で加熱する。すると、ガラスタブレットが溶融して
アイレツト16,16にガラス17,17を介してリー
ド線18,18が気密絶縁的に封着されるとともに、フ
ランジ11およびアイレツト16,16の表面の無電鱗
ニッケルメッキ層が溶融したリンを含むニッケルロウに
よって、フランジ量1と放熱板14とアィレット16,
16とが一体にロウ付けされる。この実施例においても
段部51,51が溶融したロウ材を凝集せしめることに
よって、前記と同様の効果が得られる。なお、上記実施
例はいずれも半導体装置用ステムについて説明したが、
他の気密封着体の製造にも適用できるものであり、特に
アィレット内にリード線を有しない透明ガラス板を気密
封着する気密窓等の製造にも適用できるものである。
First, an electroless nickel plating layer with a thickness of about 20 mm is formed on the surfaces of the flange 11 and the eyelets 16, 16, and the heat sink plate 14 is iron-bonded to the round hole 13 of the flange 1. After joining the eyelets 16, 16 to the eyelets 15, 15 and temporarily fixing them by caulking the respective iron parts, insert the glass tablet into the eyelets 16, 16 using a sealing tool made of graphite. , the lead wires 18, 18 are inserted into the glass tablet and heated under the same conditions as described above. Then, the glass tablet melts and the lead wires 18, 18 are hermetically and insulatively sealed to the eyelets 16, 16 via the glasses 17, 17, and the electroless scale nickel plating on the surfaces of the flange 11 and the eyelets 16, 16 is completed. The flange amount 1, the heat sink 14, the eyelet 16,
16 are brazed together. In this embodiment as well, the same effect as described above can be obtained by causing the step portions 51, 51 to aggregate the molten brazing material. Incidentally, in the above embodiments, the stem for a semiconductor device was explained.
It can also be applied to the production of other hermetically sealed bodies, and in particular to the production of hermetic windows, etc., in which transparent glass plates without lead wires are hermetically sealed within the eyelet.

‘6’まとめ この発明は以上のように、アィレツトの内壁面は少なく
とも一つの段部を形成し、表面に無電解ニッケルメッキ
層を形成して、アイレツト内に少なくともガラスを配置
し、アィレットの外側に他の金属部材を配置して加熱す
ることにより、アィレット内にガラスを封着すると同時
に、アィレツトの外側に他の金属部材をロウ付けするも
のであるから、前記無電解ニッケルメッキ層が溶融した
ロウ材が、段部の隅部に凝集されて、アィレツト内壁面
のロゥ層の厚さが薄くなるので、アィレットとガラスと
の封着強度が向上し、アイレツトとガラス間の耐衝撃性
が向上する。
'6' Summary As described above, in this invention, the inner wall surface of the eyelet forms at least one step, an electroless nickel plating layer is formed on the surface, at least glass is disposed inside the eyelet, and the outer wall surface of the eyelet is formed with at least one step. By placing another metal member on the surface and heating it, the glass is sealed inside the eyelet, and at the same time, another metal member is brazed on the outside of the eyelet, so the electroless nickel plating layer is melted. The solder material aggregates at the corners of the step and the thickness of the solder layer on the inner wall of the eyelet becomes thinner, improving the sealing strength between the eyelet and the glass and improving the impact resistance between the eyelet and the glass. do.

また、アィレツトの外表面のみに部分メッキを施すもの
に比し、非常に作業性が良く、大量生産に好適するとい
う効果を奏する。
Furthermore, compared to a method in which only the outer surface of the eyelet is partially plated, the workability is very good and it is suitable for mass production.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の半導体装置用ステムの平面図、第2図は
第1図のローロ線に沿う縦断面図、第3図はこの発明の
背景となる製造方法によって製造された半導体装置用ス
テムの要部拡大縦断面図、第4図はこの発明によって製
造された一実施例の半導体装置用ステムの平面図、第5
図は第4図のV−V線に沿う縦断面図、第6図は第5図
の姿部拡大縦断面図、第7図はこの発明によって製造さ
れた他の実施例の半導体装置用ステムの要部拡大縦断面
図、第8図はこの発明によって製造されたさらに他の半
導体装置用ステムの縦断面図、第9図はこの発明によっ
て製造されたさらに別の実施例の半導体装置用ステムの
平面図、第10図は第9図のX−X線に沿う縦断面図で
ある。 1,14…・・・他の金属部材(ステム基板、放熱板)
、5,16……アィレツト、51,52……段部、6,
17・・・…勢着ガラス、7,18…・・・リード線、
8…・・・溶接リング、91,92・…・・ロウ層、1
0……アィレツト・リング、11……フランジ。 弟′1幻 静zl一軒 弟3図 第4図 弟タ図 第ら図 紫7図 第8図 斧q図 弟′川幻
FIG. 1 is a plan view of a conventional stem for a semiconductor device, FIG. 2 is a longitudinal sectional view taken along the Rolo line in FIG. 1, and FIG. 3 is a stem for a semiconductor device manufactured by the manufacturing method that is the background of the present invention. FIG. 4 is a plan view of a stem for a semiconductor device according to an embodiment of the present invention, and FIG.
The figure is a vertical sectional view taken along the line V-V in FIG. 4, FIG. 6 is an enlarged vertical sectional view of the portion shown in FIG. 5, and FIG. 7 is a stem for a semiconductor device according to another embodiment of the present invention. FIG. 8 is a vertical cross-sectional view of still another stem for a semiconductor device manufactured according to the present invention, and FIG. 9 is a vertical cross-sectional view of still another embodiment of the stem for a semiconductor device manufactured according to the present invention. FIG. 10 is a vertical sectional view taken along the line X--X in FIG. 9. 1, 14...Other metal parts (stem board, heat sink)
, 5, 16...eyelet, 51, 52...stepped portion, 6,
17...Set glass, 7,18...Lead wire,
8...Welding ring, 91, 92...Raw layer, 1
0... Eyelet ring, 11... Flange. Younger brother '1 Gensei zl Single younger brother 3 figure 4 Younger brother Ta figure 3 figure Purple 7 figure 8 Ax q figure Younger brother' River Gen

Claims (1)

【特許請求の範囲】 1 内壁面に少なくとも一つの段部を有するアイレツト
の表面に無電解ニツケルメツキ層を形成し、このアイレ
ツト内に少なくとも封着ガラスを配置するとともに、ア
イレツトの外側に他の金属部材を配置して加熱すること
により、前記封着ガラスを溶融させてアイレツトに封着
すると同時に、前記無電解ニツケルメツキ層を溶融させ
てアイレツトと他の金属部材とをロウ付けすることを特
徴とする気密封着体の製造方法。 2 前記封着ガラスがガラス微粉末をプレス成型したガ
ラスタブレツトであり、このガラスタブレツトを貫通し
てさらにリード線が配置される、特許請求の範囲第1項
に記載の気密封着体の製造方法。 3 前記アイレツトが鉄製で、前記他の金属部材が銅製
のステム基板であり、このステム基板にさらに鉄製の溶
接リングがロウ付けされる、特許請求の範囲第1項また
は第2項に記載の気密封着体の製造方法。 4 前記アイレツトと溶接リングとを一体に形成する、
特許請求の範囲第3項に記載の気密封着体の製造方法。 5 前記他の金属部材が銅製の放熱板であり、この放熱
板の外側にさらに鉄製のフランジがロウ付けされる、特
許請求の範囲第1項または第2項に記載の気密封着体の
製造方法。
[Claims] 1. An electroless nickel plating layer is formed on the surface of an eyelet having at least one step on the inner wall surface, at least a sealing glass is disposed inside the eyelet, and other metal members are placed outside the eyelet. The method is characterized in that the sealing glass is melted and sealed to the eyelet by placing and heating the sealing glass, and at the same time, the electroless nickel plating layer is melted and the eyelet and other metal members are brazed together. Method for manufacturing a sealed body. 2. The hermetically sealed body according to claim 1, wherein the sealing glass is a glass tablet formed by press-molding fine glass powder, and a lead wire is further disposed through the glass tablet. Production method. 3. The air vent according to claim 1 or 2, wherein the eyelet is made of iron, the other metal member is a stem substrate made of copper, and an iron welding ring is further brazed to the stem substrate. Method for manufacturing a sealed body. 4. The eyelet and the welding ring are integrally formed.
A method for manufacturing a hermetically sealed body according to claim 3. 5. Manufacturing the hermetically sealed body according to claim 1 or 2, wherein the other metal member is a copper heat sink, and an iron flange is further brazed to the outside of the heat sink. Method.
JP54078543A 1979-06-21 1979-06-21 Manufacturing method of hermetically sealed body Expired JPS606542B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54078543A JPS606542B2 (en) 1979-06-21 1979-06-21 Manufacturing method of hermetically sealed body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54078543A JPS606542B2 (en) 1979-06-21 1979-06-21 Manufacturing method of hermetically sealed body

Publications (2)

Publication Number Publication Date
JPS562660A JPS562660A (en) 1981-01-12
JPS606542B2 true JPS606542B2 (en) 1985-02-19

Family

ID=13664821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54078543A Expired JPS606542B2 (en) 1979-06-21 1979-06-21 Manufacturing method of hermetically sealed body

Country Status (1)

Country Link
JP (1) JPS606542B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS614653U (en) * 1984-06-16 1986-01-11 弘憲 松吉 bathtub

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59117156U (en) * 1983-01-26 1984-08-07 サンケン電気株式会社 Insulator-encapsulated semiconductor device
CN108129037B (en) * 2017-12-25 2021-05-07 西安赛尔电子材料科技有限公司 Molybdenum-glass sealing insulator sealing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS614653U (en) * 1984-06-16 1986-01-11 弘憲 松吉 bathtub

Also Published As

Publication number Publication date
JPS562660A (en) 1981-01-12

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