JPS6063865A - Electric field ionization type gas ion source - Google Patents
Electric field ionization type gas ion sourceInfo
- Publication number
- JPS6063865A JPS6063865A JP17245483A JP17245483A JPS6063865A JP S6063865 A JPS6063865 A JP S6063865A JP 17245483 A JP17245483 A JP 17245483A JP 17245483 A JP17245483 A JP 17245483A JP S6063865 A JPS6063865 A JP S6063865A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- ion source
- ion
- electric field
- emitter chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005684 electric field Effects 0.000 title abstract description 8
- 239000007789 gas Substances 0.000 claims abstract description 25
- 239000001307 helium Substances 0.000 claims abstract description 16
- 229910052734 helium Inorganic materials 0.000 claims abstract description 16
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000000605 extraction Methods 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 abstract description 3
- 239000010937 tungsten Substances 0.000 abstract description 3
- 238000011109 contamination Methods 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 33
- 238000010884 ion-beam technique Methods 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- -1 helium ion Chemical class 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0802—Field ionization sources
- H01J2237/0807—Gas field ion sources [GFIS]
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ）発明の技術分野
本発明は高密度化リソグラフィ技法に係る電界電離型ガ
スイオン源に関す。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to field ionization gas ion sources for densification lithography techniques.
（ｂ）技術の背景
イオンビーム露光は、近時のザブミクロン領域のレジス
］・パターン露光法として、電子ビーム露光に比べて高
い分解能があること、レジストに対する感度も高いこと
から着目されている。(b) Background of the Technology Ion beam exposure is attracting attention as a recent resist pattern exposure method in the submicron region because it has higher resolution than electron beam exposure and is also highly sensitive to resists.
本発明は、マスク等製作時に於りる微細加エバターンの
露光をＬｉ的とした電界電離型ガスイオン源に係る提示
である。The present invention relates to a field ionization type gas ion source that uses Li to expose a finely modified evaporator during the manufacture of a mask or the like.
（Ｃ）従来技術の問題点
従来、軽質量ガスイオン源を用いるビーム露光装置に於
ては、放出のイオンエネルギ幅が小さく。(C) Problems with the Prior Art Conventionally, in a beam exposure apparatus using a light mass gas ion source, the ion energy width of emission is small.
大イオン電流が取得され２例えば膜厚１〔μｍ〕のレジ
スト露光が可能なことから、イオン源ガスとして水素が
使用されている。Hydrogen is used as the ion source gas because a large ion current can be obtained and it is possible to expose a resist with a film thickness of, for example, 1 μm.
然し、水素ガス使用のイオン源は、その動作の１ 安定化には１０ Ｔｏｒｒ以下の到達圧力の空間と。However, ion sources using hydrogen gas For stabilization, create a space with an ultimate pressure of 10 Torr or less.
該空間に供給する水素ガスは極めて高純度のガスを準備
せねばならない。従って、前記の如きイオン源に対する
過酷な駆動条件が必要とされるイオンビーム露光装置は
、装置のσＬ用化を阻む原因にもなっており問題がある
。また水素ガスを用いた場合、エミソクチップ表面の電
界強度が小さい為に、前記チップ表面が汚染される問題
がある。The hydrogen gas supplied to the space must be of extremely high purity. Therefore, the ion beam exposure apparatus, which requires severe driving conditions for the ion source as described above, is problematic because it prevents the use of the apparatus for σL use. Furthermore, when hydrogen gas is used, there is a problem that the surface of the chip is contaminated because the electric field strength on the surface of the EMISOKU chip is small.
（ｄ）発明の目的 本発明は、前記の問題点を解決することである。(d) Purpose of the invention The present invention is to solve the above problems.
本発明によれば、従来の前記ガスイオン源に課した過酷
な装ｒｒＬ駆動条件を緩めて、同等またはそれ以上の微
細パターン加工機能を具えると供に。According to the present invention, the severe rrL drive conditions imposed on the conventional gas ion source are relaxed, and the same or better fine pattern processing function is provided.
水素ガスを用いた場合よりもエミッタチップ表面が汚染
されにくい実用性の高い電界電離型イオンビーム源を開
発することにある。The purpose of this project is to develop a highly practical field ionization type ion beam source in which the emitter chip surface is less likely to be contaminated than when hydrogen gas is used.
（ｅ）発明の構成
前記目的は、エミッタチップと引出し電極間の空間内を
ヘリウムガスで満たずことにより達成される。(e) Structure of the Invention The above object is achieved by filling the space between the emitter chip and the extraction electrode with helium gas.
（ｆ）発明の実施例 以下１本発明のガスイオン源実施例に就いて。(f) Examples of the invention The following is an example of the gas ion source of the present invention.
これを図面に従って詳細に説明する。This will be explained in detail according to the drawings.
第１図は電界電ｈ１１型イオンビーム露光装置全体の簡
略構成図、又第２図は両図のガスイオン源構造を示すＷ
１面図である。Figure 1 is a simplified configuration diagram of the entire electric field electric h11 type ion beam exposure apparatus, and Figure 2 shows the structure of the gas ion source in both figures.
It is a front view.
第１図より本発明に係るビーム露光装置の構成を説明す
る。The configuration of a beam exposure apparatus according to the present invention will be explained with reference to FIG.
図中、１はガスイオン源をなす一方側電極形成のエミッ
タチップ、２はヘリウムガス重用を用の他方側電極を兼
ねるイオン引出し電極であり、前記エミッタチップｌと
共にヘリウムイオンの生成及び該生成のイオン放射源で
ある。３は前記電極１及び電極２から電離されたガスイ
オン径をｔＩ漬画に適するスポットとなずアパーチャ、
４はアパーチャ３背部のイオン加速レンズ、５はブラン
カ、６ば前記加速のイオンビームを集束する所謂アイン
ツエルレンズ、７は集束レンズ６を経たイオンを偏向制
御する静電デフレクク、該デフレクタによりステージ上
基板に対しパターン描画がされる。In the figure, 1 is an emitter chip with an electrode formed on one side that serves as a gas ion source, and 2 is an ion extraction electrode that also serves as the other side electrode for heavy use of helium gas. It is an ion radiation source. 3 is an aperture with a diameter of gas ions ionized from the electrodes 1 and 2 as a spot suitable for tI immersion;
4 is an ion accelerating lens behind the aperture 3; 5 is a blanker; 6 is a so-called Einzel lens that focuses the accelerated ion beam; 7 is an electrostatic deflector that deflects and controls the ions that have passed through the focusing lens 6; A pattern is drawn on the substrate.
又、８は前記パターン描画をなす加工基板を固着するタ
ーゲットステージである。尚、ターゲットステージは該
ステージのＸＹ平面を高精度に位置決めする機構を具え
る。図示されないが、前記ターゲットステージ８下方に
は、高真空排気系が連接される。Further, 8 is a target stage on which the processed substrate on which the pattern is drawn is fixed. Note that the target stage includes a mechanism for positioning the stage in the XY plane with high precision. Although not shown, a high vacuum evacuation system is connected below the target stage 8.
前記のイオンビーム露光装置に於いて、ヘリウムイオン
の放射源となるイオン源構成要部をなすエミッタチップ
１とイオン引出し電極２との電極配置の詳細構造図が第
２図断面図である。FIG. 2 is a cross-sectional view showing a detailed structure of the electrode arrangement of the emitter chip 1 and the ion extracting electrode 2, which constitute the main components of the ion source, which serves as a helium ion radiation source, in the ion beam exposure apparatus described above.
第２図のイオン源電極配置に於いて、前記エミッタチッ
プ１は恰も鉛筆のキャンプ形状とされ。In the ion source electrode arrangement shown in FIG. 2, the emitter tip 1 is shaped like a pencil camp.
その先端ＩＯはヘリウムガスをイオン化する高電界強度
を取ｆＵＬやすい構成とされる。他方、前記引出し電極
２は、前記エミ・ノタチ・ノブ電極と同軸状に電極を囲
め配置され且つ前記電極先端１０の電離イオンを射出す
る為の細孔１１を有する円柱体電極として形成される。The tip IO is configured to easily take fUL with high electric field strength to ionize helium gas. On the other hand, the extraction electrode 2 is formed as a cylindrical electrode that is disposed coaxially with the Emi-Notachi-Nobu electrode and surrounds the electrode, and has a pore 11 for ejecting ionized ions from the electrode tip 10.
前記配置の電極間は、熱伝導１生の高いサファイヤ１１
色縁体で隔＋ｉ！＋ｔされる。８亥隔呂１ｔされた空間
９は、」三方からガス源をなすヘリウムボンへからのガ
スが供給される。Between the electrodes in the above arrangement, sapphire 11 with high thermal conductivity is used.
Separation +i with color frame body! +t will be given. The space 9, which is spaced 8 meters apart, is supplied with gas from three sides to a helium bomb serving as a gas source.
エミッタチップ１は、タングステンより形成され、先端
１０の曲率半径は、 ６０ｎｍの平滑な曲率面が例えは
電解１ｉ１Ｆ Ｉγ（或いは電界蒸発）法によりイ（１
与しである。これはヘリウムガスのイオン化電界強度、
３〜５×１♂Ｖ／ｃｍを伺与する為である。The emitter tip 1 is made of tungsten, and the radius of curvature of the tip 10 is 60 nm.
It is a given. This is the ionization electric field strength of helium gas,
This is to obtain a voltage of 3 to 5×1♂V/cm.
８−７
面し°ζ４図示のイオン源空間９は、１０ 〜１０ Ｔ
０＋’ｒに真空排気され１次いでイオン源空間９を１０
〜１０ Ｔｏｒｒの圧力にヘリウム充填がされる。更に
、エミッタチップ電４ｆＡ１を絶対温度２０に以下に冷
却して、ターゲ、ト体（接地）に対して電極端子１２に
略１０ｋＶ （曲率半径６０ｎｍのエミッタチップ電極
の場合）の電圧を印加すればヘリウムイオンが放出され
る。8-7 Facing °ζ4 The illustrated ion source space 9 is 10 to 10 T
The ion source space 9 is evacuated to 0+'r and then the ion source space 9 is evacuated to 10
Helium fill is applied to a pressure of ~10 Torr. Furthermore, if the emitter tip electrode 4fA1 is cooled to an absolute temperature of 20 or less, and a voltage of about 10 kV (in the case of an emitter tip electrode with a radius of curvature of 60 nm) is applied to the electrode terminal 12 with respect to the target body (ground), Helium ions are released.
係るへ・リウムガスイオン源駆動用の電圧は、前記・ｌ
る水素ガスの場合に比べ高くなるが、該エミッタ表面に
吸着若しくは近接するヘリウム以外の原子又は分子は、
タングステンチップ表面に近イ′：Ｊく前にイオン化さ
れエミッタチップ１に到達・けず。The voltage for driving the lithium gas ion source is the above-mentioned voltage.
However, atoms or molecules other than helium that are adsorbed to or close to the emitter surface are
Tungsten near the tip surface: Ionized before reaching the emitter tip 1. Scratches.
チップ電極の先端部を汚染分子或いは原子から１ｈ；設
することが出来る。即ち、前記汚染ガスの吸着によりη
ｒしく損なわれるイオン源の安定性を取１！Ｐすること
が出来る。The tip of the tip electrode can be placed 1 h away from contaminating molecules or atoms. That is, due to the adsorption of the pollutant gas, η
The stability of the ion source is severely compromised! You can P.
斯槌な高いイオン化電界強度が必要とされる本 −発明
のヘリウムイオン源を使用すれば、エミッタチップ電極
自体の清浄効果があるため、供給のヘリウムガス純度は
９９．９９９９％以下で良い。If the helium ion source of the present invention, which requires a very high ionization electric field strength, is used, the purity of the supplied helium gas may be 99.9999% or less because the emitter tip electrode itself has a cleaning effect.
又装置駆動の到達圧力は、 １０ Ｔｏｒｒあるいはそ
れ以下の真空度に緩めることが出来る。Additionally, the ultimate pressure for driving the device can be reduced to a vacuum level of 10 Torr or less.
（ｇ＞発明の効果
以上、 ８’ｆ’＆ＩＩＩに説明した本発明のイオン源
を用いるイオンビーム露光装置ば、従来問題とされたビ
ーム露光装置に要求される超高真空の到達真空度が緩和
される。また不純物分子による放射イオン源の不安定性
が解消され、長時間にわたって安定した微細パターン描
画用の露光イオンが供給される。更に又、レジスト露光
に伴うガス放出に対しても、イオン源が安定に動作する
等の利点がある。(g> Effects of the invention) The ion beam exposure apparatus using the ion source of the present invention described in 8'f'& III alleviates the ultra-high vacuum required for beam exposure apparatuses, which has been a problem in the past. In addition, the instability of the radiation ion source due to impurity molecules is eliminated, and exposure ions for drawing fine patterns are supplied stably over a long period of time.Furthermore, the ion source It has advantages such as stable operation.
第１図は電界電離型イオンビーム露光装置全体の簡略構
成図、又第２図は本発明のガスイオン源構造を説明する
図である。
図中、１は一方の電極をなずエミッタチップ。
２はガス電＆１［用の他方電極を兼ねる引出し電極。
３は電離されたガスイオンを絞るアバーチ中、イは・ｆ
オン加速レンズ、５はブランカ、６はイオンビームを集
束するアインツエルレンズ、７は集束レンズ６後のイオ
ンビームデフレクタ、及び８はパターン（Ｗ画のターゲ
ットステージ、９ばイオン源空間、１０は１の先（７１
＋Ａ ＋ １１は細孔、及び１２は電圧印加ｉＩｊ：ｌ
子である。FIG. 1 is a simplified configuration diagram of the entire field ion beam exposure apparatus, and FIG. 2 is a diagram illustrating the structure of a gas ion source according to the present invention. In the figure, 1 is an emitter chip without one electrode. 2 is an extraction electrode that also serves as the other electrode for gas electric &1. 3 is during averting to narrow down the ionized gas ions, and a is f.
5 is a blanker, 6 is an Einzel lens that focuses the ion beam, 7 is an ion beam deflector after the focusing lens 6, and 8 is a pattern (W image target stage, 9 is an ion source space, 10 is 1 Beyond (71
+A + 11 is a pore, and 12 is a voltage application iIj:l
It is a child.
Claims (1)
で満たしたことを特徴とする電界電離型ガスイオン源。A field ionization type gas ion source characterized by filling the space between the emitter chip and the extraction electrode with helium gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17245483A JPS6063865A (en) | 1983-09-19 | 1983-09-19 | Electric field ionization type gas ion source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17245483A JPS6063865A (en) | 1983-09-19 | 1983-09-19 | Electric field ionization type gas ion source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6063865A true JPS6063865A (en) | 1985-04-12 |
Family
ID=15942284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17245483A Pending JPS6063865A (en) | 1983-09-19 | 1983-09-19 | Electric field ionization type gas ion source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6063865A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0656991U (en) * | 1991-11-01 | 1994-08-05 | 住友電装株式会社 | Flexible wiring board connector connection structure |
-
1983
- 1983-09-19 JP JP17245483A patent/JPS6063865A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0656991U (en) * | 1991-11-01 | 1994-08-05 | 住友電装株式会社 | Flexible wiring board connector connection structure |
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