JPS605870A - Valve - Google Patents

Valve

Info

Publication number
JPS605870A
JPS605870A JP11284583A JP11284583A JPS605870A JP S605870 A JPS605870 A JP S605870A JP 11284583 A JP11284583 A JP 11284583A JP 11284583 A JP11284583 A JP 11284583A JP S605870 A JPS605870 A JP S605870A
Authority
JP
Japan
Prior art keywords
valve
test
present
layer
valve seat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11284583A
Other languages
Japanese (ja)
Inventor
Kaoru Tada
薫 多田
Mitsuo Kawai
光雄 河合
Tetsuo Fujiwara
藤原 鉄雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP11284583A priority Critical patent/JPS605870A/en
Publication of JPS605870A publication Critical patent/JPS605870A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C10/00Solid state diffusion of only metal elements or silicon into metallic material surfaces
    • C23C10/28Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C12/00Solid state diffusion of at least one non-metal element other than silicon and at least one metal element or silicon into metallic material surfaces
    • C23C12/02Diffusion in one step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Lift Valve (AREA)
  • Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)

Abstract

PURPOSE:To obtain a valve having superior cavitation erosion resistance by diffusing an Ni layer formed on at least the surface of the valve seat of a Ti or Ti alloy valve. CONSTITUTION:An Ni layer of about 60mum thickness formed by vapor deposition, electroless plating or other method on at least the surface of the valve seat of a valve made of Ti or a Ti alloy contg. >= about 50wt%, preferably >=80% Ti is diffused by heating to obtain a valve having superior cavitation erosion resistance and suitable for use in an analyzing line or the like in a chemical plant or a power plant. By vapor-depositing Si, Cr, B or the like together with Ni, the m.p. of the resulting layer can be dropped to facilitate diffusion.

Description

【発明の詳細な説明】 [発明の技術分野] 本発明は、化学プラントや発電プラント等における溶液
、あるいは蒸気管理のための分析ラインに用いられるバ
ルブに門りる。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a valve used in an analysis line for solution or steam management in chemical plants, power plants, etc.

[発明の技術的717L]どその問題点]一般に化学プ
ラン1〜や発電プラント等において溶液あるいは蒸気管
理をする際には、配室の各所に分析ラインを設【プ溶液
等を採取し分析している。
[Technical 717L of the invention] What problems] Generally, when managing solutions or steam in chemical plans 1~ or power generation plants, analysis lines are installed in various places in the room. ing.

この分析ラインに用いられるバルブには、分析溶液ある
いは蒸気にバルブ自身からの8曲生成物等がtlZ人す
るのを防ぐため、(りれた耐腐蝕性が要求され従来、1
1が用いられている。しかし、Tiはバルブ弁座材とし
て要求される、耐キャビテーション・エロージヨン性に
つい−(は充分であると吉えず、ごれらの特性を同時に
満足りる材料が望まれている。
The valves used in this analytical line are required to have high corrosion resistance (1.
1 is used. However, Ti does not have sufficient cavitation and erosion resistance required as a valve seat material, and a material that simultaneously satisfies these properties is desired.

U発明の目的] 本発明は、優れた耐キャビデージョン・より −ジョン
性を有J−るバルブを提供することを[1的としたもの
である。
OBJECTS OF THE INVENTION It is an object of the present invention to provide a valve having excellent cavidation resistance and better cavitation properties.

[発明の概要] 本発明は耐食性に優れる、−l iバルブの少なくとも
弁座表面に蒸着、無電解メッキ等により、設置ノられた
N1層を拡散さけたIM jfjを右することを特徴と
するバルブである。なお、本発明に用いられるバルブ母
材は、1−in:たは−1′iを50重帛%以上、好ま
しくは80重量%以上含むものであればよい。NiをT
iに拡散さぼる理由は、この拡11kによりNi ど王
iの全屈間化合物を生成さけるCとにより、耐キャビデ
ージョン・10−ジミ1ン性を向上させることにある。
[Summary of the Invention] The present invention is characterized by providing an IM jfj that has excellent corrosion resistance and avoids diffusion of the installed N1 layer by vapor deposition, electroless plating, etc. on at least the valve seat surface of the -I valve. It's a valve. The valve base material used in the present invention may contain 1-in: or -1'i in an amount of 50% by weight or more, preferably 80% by weight or more. Ni to T
The reason for not diffusing into Ni is to improve cavidation resistance and 10-dimine properties by preventing the formation of all intercalation compounds of Ni and C through this expansion.

尚Niど共にSiやCr、Bなどを蒸着させ、融点を下
げ−C拡散を容易にづることも可能である。
It is also possible to deposit Si, Cr, B, etc. together with Ni to lower the melting point and facilitate -C diffusion.

[発明の実施例] −1−1バルブの表面にNiをJ3よそ60 tlm 
m着した後、1150”C150?i間の拡散処理を行
なった。その1殺、身11図(a)に示りようにN1を
蒸着した面が試験片の表面どなるようにキャビテーショ
ン・1に1−ジョン試a J’lを製作した。一方、第
1図(tl)に示づような試1験Jvを従来のT1バル
ブから製作した。これらの試+1A )、Lを学振法に
jlj;じてキャビテーション・i ll−1−ジP]
ン試験を行なった。尚、試験条イ′1は振幅90μm1
周波数6゜5KH2て3時間行なった。
[Embodiment of the invention] -1-1 Ni on the surface of the valve J3 about 60 tlm
After depositing N1, a diffusion treatment between 1150"C150 and 1150" was performed.As shown in Figure 11 (a), cavitation 1 was applied so that the surface on which N1 was deposited was on the surface of the test piece. 1-John test a J'l was manufactured.Meanwhile, test 1 Jv as shown in Figure 1 (tl) was manufactured from the conventional T1 valve. cavitation i ll-1-diP]
A test was conducted. In addition, the test strip A'1 has an amplitude of 90 μm1
The experiment was conducted for 3 hours at a frequency of 6°5KH2.

この結果、本発明に係るNiを拡;1(さけた試験片の
キャビテーション・エロージョンlfl耗量は、15m
gぐあったのに対し、従来の゛「1試験jvでは、48
 mgと約3(t’j 予い1(1耗j?(−(−6ウ
リ、本発明に係るN1を王1表面に蒸着後、J+i;敗
した表面の耐キャビタージョン・工1」−ジョン4ノ1
が侵れており、本発明に係るバルブ゛は、長期間の使用
に耐え、工業−L有用である。
As a result, Ni according to the present invention was expanded;
In contrast to the conventional ゛``1 test JV, there were 48
mg and about 3 (t'j Preliminary 1 (1 wear j? (-(-6 Uri, J+i; After depositing N1 according to the present invention on the surface of King 1, J+i; Cavitation resistance of the defeated surface 1) -John 4 No. 1
The valve according to the present invention can withstand long-term use and is useful in industry.

なお、本発明に係るバルブにおいては耐キA7ビ戸−シ
ョン・エロージヨン性が最も要求される弁座表面にのみ
N1を蒸着後、拡11にさけ−Ct)よい。
In addition, in the valve according to the present invention, after N1 is vapor-deposited only on the valve seat surface where resistance to cracking and erosion is most required, it is better to avoid expansion 11-Ct).

1− i系合金パルブ表面にd3よそ60μn1無電Y
rCNiメツキした後、Arガス中で900℃、20時
間の拡散処理を行なつIこ。その後第1図(a)に示す
ようにNiメッキした面が試験片の表面となるようにキ
ャビデージョン・11−1−ジ」ンnl(Ilj’:片
を製作した。一方、第1図(IJ〉に示JJ、う4g試
験ハを従来のT−iバルブから製作した。
1- 60μn1 electroless Y on the surface of the i-based alloy pulp
After rCNi plating, a diffusion treatment was performed at 900°C for 20 hours in Ar gas. Thereafter, as shown in FIG. 1(a), a cavidation 11-1-jin nl (Ilj') piece was fabricated so that the Ni-plated surface was the surface of the test piece. (IJ) 4g test C was manufactured from a conventional T-i valve.

これらの試験片を学振法に準じて、キャビテーション・
エロージョン試験を行なった。
These test pieces were subjected to cavitation and
An erosion test was conducted.

なお、試験条件は振幅90μm、周波数6.5Kllz
で3時間行なった。。
The test conditions were an amplitude of 90μm and a frequency of 6.5Kllz.
It lasted for 3 hours. .

この結果、本発明に係る無tri解Niメッキし1.:
試験変のキャビテーション・工[l−ジョン10耗+1
は17m(Jであったのに対し、従来の]゛i試験片−
Cは/’1.8111Uと約3 ’fFj多い損耗量で
あり、本発明に係るTi表面に無電解Niメッキした後
、拡散したものは、耐キャビデージョン・エロージョン
flが饅れでおり、本発明に係るバルブは、長]”73
間の使用に耐え、」業上右用Cある。
As a result, the non-trilysis Ni plating according to the present invention was performed.1. :
Test change cavitation/engineering [L-John 10 wear +1
was 17 m (J, whereas the conventional]゛i test piece-
C is /'1.8111U, which is about 3' fFj more than the wear amount, and the one diffused after electroless Ni plating on the Ti surface according to the present invention is full of cavidation resistance and erosion fl. The valve according to the present invention has a long length]”73
It withstands long-term use and is suitable for commercial use.

尚、本発明にかかるバルブに、;3いては、耐キャビデ
ージョン・工1−1−ジー」ン性が最も要求される弁)
1うのIノ無電F+7Ni メツ:1−シた後に拡(1
にさけてもにい。
In addition, the valve according to the present invention is a valve that is most required to have cavidation resistance and engineering properties.
1 Uno I no electric F + 7Ni Metsu: 1-S then expand (1
Even if it's bad.

1光明の効果」 以上の結果から明らかな如く、木5し明にかかるバルブ
に1、耐キA7ビーアーシヨン・−■−ローション性に
(Ωれ−((13す、長期間、安定に使用でさる一bの
である。
1 Effect of light" As is clear from the above results, 1 is effective for bulbs that are exposed to light, and 1 is effective for anti-kissing A7 beersion - ■ - lotion properties (Ωre - (13). This is Saru Ib.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、キVヒデーシ三1ン・土11−ジ]ン試!!
?iJ’+の1゛O1面図(1)はN i 11j、 
tt!: l;”i、(2)は11もある。 代理人 弁理士 m 近 u(((i (ばか−名)第
 1 図 (1<b)
Figure 1 is the KiV Hideshi 31n/Sat 11-J]n test! !
? The 1゛O1 plane view (1) of iJ'+ is N i 11j,
tt! : l;”i, (2) has 11. Agent Patent attorney m Near u(((i (idiot name) Fig. 1 (1<b)

Claims (1)

【特許請求の範囲】[Claims] 少なくと°b、バルブ弁座表面に設けられたNi層を拡
散させた[1、又はT−i合金からなる事を特徴どした
バルブ。
A valve characterized in that the Ni layer provided on the surface of the valve seat is diffused by at least [1] or a Ti alloy.
JP11284583A 1983-06-24 1983-06-24 Valve Pending JPS605870A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11284583A JPS605870A (en) 1983-06-24 1983-06-24 Valve

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11284583A JPS605870A (en) 1983-06-24 1983-06-24 Valve

Publications (1)

Publication Number Publication Date
JPS605870A true JPS605870A (en) 1985-01-12

Family

ID=14596967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11284583A Pending JPS605870A (en) 1983-06-24 1983-06-24 Valve

Country Status (1)

Country Link
JP (1) JPS605870A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03272372A (en) * 1990-03-22 1991-12-04 Ckd Corp On-off valve
JP2014185734A (en) * 2013-03-25 2014-10-02 Suncall Corp Seal valve and manufacturing method of the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03272372A (en) * 1990-03-22 1991-12-04 Ckd Corp On-off valve
JP2014185734A (en) * 2013-03-25 2014-10-02 Suncall Corp Seal valve and manufacturing method of the same

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