JPS6057293B2 - DC switching circuit protection method - Google Patents
DC switching circuit protection methodInfo
- Publication number
- JPS6057293B2 JPS6057293B2 JP6047077A JP6047077A JPS6057293B2 JP S6057293 B2 JPS6057293 B2 JP S6057293B2 JP 6047077 A JP6047077 A JP 6047077A JP 6047077 A JP6047077 A JP 6047077A JP S6057293 B2 JPS6057293 B2 JP S6057293B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- short circuit
- self
- time
- switching circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Protection Of Static Devices (AREA)
- Power Conversion In General (AREA)
Description
【発明の詳細な説明】
この発明は大容量トランジスタ(GTR)やゲートタ
ーンオフサイリスタ(GTO)などの自己消弧形半導体
素子を使用した直流スイッチング回路の保護方式に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a protection system for a DC switching circuit using a self-extinguishing semiconductor element such as a large capacity transistor (GTR) or a gate turn-off thyristor (GTO).
自己消弧形半導体素子を使用した直流スイッチング回
路の地表的な例としてはインバータ回路やチョッパ回路
があり、これら回路ではゲート信号の誤動作などにより
直流短絡事故が生ずることは周知である。Common examples of DC switching circuits using self-extinguishing semiconductor devices include inverter circuits and chopper circuits, and it is well known that DC short circuits can occur in these circuits due to gate signal malfunctions.
このような直流短絡事故時に自己消弧形半導体素子をタ
ーンオフさせると、スイッチング時間が非常に早いため
回路のインダクタンスなどの影響により過電圧を発生し
やすく、この過電圧により前記素子が破壊する危険性が
ある。またGTOではしや断可能な陽極電流には限界が
あり、この電流値を越えてしや断動作を行うとスイッチ
ング損失が増大しGTOが破壊するなどの不具合があり
、これら自己消弧形半導体素子を使用した直流スイッチ
ング回路においては直流短絡事故時の前記素子の保護を
どのように行うかにより使用回路の信頼性が大きく左右
される。 この発明は以上の問題点に鑑みてなされたも
のであり、自己消弧形半導体素子を使用した直流スイッ
チング回路の保護方式に関し、直流短絡事故時に前記自
己消弧形半導体素子を確実に保護して、信頼性の高い直
流スイッチング回路の保護方式を提供することを目的と
している。If a self-extinguishing semiconductor element is turned off in the event of such a DC short-circuit accident, the switching time is very fast, so overvoltage is likely to occur due to the influence of circuit inductance, and there is a risk that the element may be destroyed by this overvoltage. . In addition, there is a limit to the anode current that can be cut off in a GTO, and if the anode current exceeds this current value and the anode current is cut off, switching loss increases and the GTO is destroyed. In a DC switching circuit using an element, the reliability of the circuit used is greatly influenced by how the element is protected in the event of a DC short circuit accident. This invention has been made in view of the above problems, and relates to a protection method for a DC switching circuit using a self-extinguishing semiconductor element, and is intended to reliably protect the self-extinguishing semiconductor element in the event of a DC short circuit accident. , aims to provide a highly reliable protection method for DC switching circuits.
この発明の一実施例を第1図に、動作説明用の波形を
第2図に示す。An embodiment of the present invention is shown in FIG. 1, and waveforms for explaining the operation are shown in FIG.
第1図において、11は交流入力端子、12は入力しや
新田、13は整流器、14は直流リアクトル、15は直
流フィルタコンデンサ、16はリアクトル、17はイン
バータ回路、18は出力しや新田、19は負荷、20は
変流器、21は直流短絡検出器、22は短絡保護回路、
23は自己消弧形半導体素子保護回路、24は短絡器で
、第2図はこの発明を定電圧形インバータ回路に応用し
た場合の実施例を示す。定電圧形インバータ回路の直流
短絡保護方式としては、インバータ回路17の直流短絡
により、まず直流フィルタコンデンサより事故電流is
が流れ初め、これを変流器20で検出し、直流短絡検出
器21および短絡保護回路22を介して、入出力しや新
田12、13のしや断動作指令、短絡器24の点弧指令
、整流器13の位相絞り又はゲートしや断指令を行い通
常保護される。この時第2図の時Illlt、で直流短
絡事故が発生し、時間を2に短絡器24が点弧されると
事故電流は短絡器24に大部分の電流が分流し、通常は
第2図の斜線をほどこした部分に相当する電流がインバ
ータ回路17に流れる。従つて直流短絡事故発生時に事
故電流の分流を適切に行うと直流回路に速断ヒューズな
どを設けないヒューズレス保護ができる。しかし時帥,
から時腓,までの期間に前記したようにインバータ回路
17の自己消弧形半導体素子をしや断すると過電圧やし
や断能力の不足で前記素子が破壊する危険がある。従つ
てこの発明では直流短絡事故1sが正母線に向かつて流
れている時間t1から時間ちまではしや断動作が行なわ
せず、この電流1sが前記とは反対方向に流れる時間T
3から時間ζまでの間に前記素子力化や断動作を行うよ
うに自己消弧形半導体素子保護回路23により短絡検出
器21が短絡検出後に変流器20の電流方向が反転した
ことを判別して保護を行う。この期間に自己消弧形半導
体素子を確実に消弧させれば、時間z以降の事故電流は
流れず、事故電流13が連続的にくり返し流れることに
よつて熱的問題で前記素子が破壊するのを防止できる。
またこの期間にしや断動作を行つても前記素子の電流は
零をなつている期間中であるから過電圧発生しや断能力
不足で素子が破壊する危険性がない。従つてこの発明に
よれば自己消弧形半導体素子の保護が確実に行えるから
、使用回路の信頼性を大幅に向上させることができる。
第3図はこの発明の他の実施例を示す。In Figure 1, 11 is an AC input terminal, 12 is an input terminal, 13 is a rectifier, 14 is a DC reactor, 15 is a DC filter capacitor, 16 is a reactor, 17 is an inverter circuit, and 18 is an output terminal. , 19 is a load, 20 is a current transformer, 21 is a DC short circuit detector, 22 is a short circuit protection circuit,
23 is a self-extinguishing type semiconductor element protection circuit, 24 is a short circuit, and FIG. 2 shows an embodiment in which the present invention is applied to a constant voltage type inverter circuit. As a DC short circuit protection method for a constant voltage inverter circuit, when a DC short circuit occurs in the inverter circuit 17, the fault current IS is first removed from the DC filter capacitor.
begins to flow, this is detected by the current transformer 20, and via the DC short circuit detector 21 and the short circuit protection circuit 22, a command to disconnect the input/output shields 12 and 13 and ignition of the short circuit 24 is issued. Normally, protection is provided by issuing a command to restrict the phase of the rectifier 13 or to cut off the gate. At this time, a DC short circuit accident occurs at time Illllt in Fig. 2, and when the short circuit 24 is ignited at time 2, most of the fault current is shunted to the short circuit 24, and normally, as shown in Fig. A current corresponding to the shaded portion flows through the inverter circuit 17. Therefore, if the fault current is appropriately divided when a DC short circuit occurs, fuseless protection can be achieved without providing a fast-acting fuse in the DC circuit. But the time marshal,
If the self-arc-extinguishing semiconductor element of the inverter circuit 17 is disconnected as described above during the period from 1 to 3, there is a risk that the element will be destroyed due to overvoltage or insufficient disconnection capability. Therefore, in this invention, the cutting operation is not performed until a time t1 when the DC short circuit fault 1s is flowing toward the positive bus bar, and the current 1s is flowing in the opposite direction to the above-mentioned time T1.
The self-extinguishing semiconductor element protection circuit 23 determines that the current direction of the current transformer 20 has been reversed after the short circuit is detected by the short circuit detector 21 so that the element is activated or disconnected between time 3 and time ζ. protection. If the self-arc-extinguishing semiconductor element is reliably extinguished during this period, no fault current will flow after time z, and the fault current 13 will continue to flow repeatedly, causing the element to be destroyed due to thermal problems. can be prevented.
Furthermore, even if the current is cut off during this period, the current in the element is at zero, so there is no risk of the element being destroyed due to overvoltage generation or insufficient breaking ability. Therefore, according to the present invention, since the self-arc-extinguishing semiconductor element can be reliably protected, the reliability of the circuit used can be greatly improved.
FIG. 3 shows another embodiment of the invention.
第3図も同様にこの発明を定電圧形インバータ回路に応
用した場合の実施例を示す。第1図において自己.消弧
形半導体素子保護回路23は時間T3〜T4までの期間
を判別する手段とに直流短絡検出器21が短絡検出後に
変流器20の電流方向に反転したことにより時間ち〜時
間T4の期間を判別すると説明した。しかし通常のイン
バータ回路やチョッパ回.路などの直流スイッチング回
路においては、主回路定数や主回路配線経路等が定まれ
ば、必然的に時間ちから時間T3までの期間(同様にち
からT4までの期間)は定まる。従つて前記自己消弧形
半導体素子保護回路23のように変流器20の電流極性
一の判別機能を設けなくても、第3図に示すように直流
短絡検出器21が直流短絡を検出してから遅延要素をも
つて所定時間後に自己消弧形半導体素子のしや断動作を
指令する自己消弧形半導体素子保護回路25を設け保護
を行なうことができる。この場合の効果、作用も第1図
の場合と同等である。この発明において自己消弧形半導
体素子のしや断動作を指令する期間は第2図の時間T3
からT4までの期間に限定されるものではなく、時間t
似前の直流短絡電流1sが所定値に減少した時間から行
つても良い。Similarly, FIG. 3 shows an embodiment in which the present invention is applied to a constant voltage inverter circuit. In Figure 1, self. The arc-extinguishing semiconductor device protection circuit 23 is a means for determining the period from time T3 to time T4, and the DC short circuit detector 21 detects a short circuit and then reverses the current direction of the current transformer 20. It was explained that it is determined. However, it is a normal inverter circuit or chopper circuit. In a DC switching circuit such as a circuit, if the main circuit constants, main circuit wiring routes, etc. are determined, the period from time T3 to time T3 (similarly, the period from T4 to T4) is necessarily determined. Therefore, the DC short circuit detector 21 can detect a DC short circuit as shown in FIG. Protection can be achieved by providing a self-turn-off type semiconductor device protection circuit 25 which has a delay element and instructs the self-turn-off type semiconductor device to shut off after a predetermined period of time. The effects and actions in this case are also the same as in the case of FIG. In this invention, the period during which the self-arc-extinguishing type semiconductor element is commanded to be cut off is time T3 in FIG.
to T4, and is not limited to the period from t to T4.
The measurement may be performed from the time when the immediately preceding DC short circuit current 1 s has decreased to a predetermined value.
この指令を行う時間は第3図の自己消弧形半導体素子保
護回路25の遅延時間の調整によつて可能である。この
他のこの発明の要旨を変更しない範囲において種々の変
形回路を構成できる。The time for issuing this command can be adjusted by adjusting the delay time of the self-extinguishing semiconductor element protection circuit 25 shown in FIG. Various other modified circuits can be constructed without changing the gist of the invention.
以上説明するようにこの発明によれば次の効果が生ずる
。As explained above, the present invention provides the following effects.
(1)直流短絡を検出した時点から所定時間後にインバ
ータ回路やチョッパ回路などのスイッチング素子である
自己消弧形半導体素子のしや断動作を指令できる。(1) After a predetermined period of time from the time when a DC short circuit is detected, it is possible to instruct a self-extinguishing semiconductor element, which is a switching element such as an inverter circuit or a chopper circuit, to turn on and off.
この所定時間までの間に直流短絡事故電流が所定値に減
少するから自己消弧形半導体素子のしや断能力不足によ
る破壊や、急速な事故電流しや断による過電圧またはD
v/Dt過大に起因する破壊を防止できる。Since the DC short-circuit fault current decreases to a predetermined value within this predetermined period of time, damage due to lack of shearing ability of self-extinguishing semiconductor devices, overvoltage or D
Destruction caused by excessive v/Dt can be prevented.
(2)自己消弧形半導体素子固有の特性に起因する破壊
原因を直流短絡事故時前記(1)項の効果により除去で
きるから、自己消弧形半導体素子を使用した直流スイッ
チング回路の信頼性の高い保護方式を提供てきる。(2) Since the causes of destruction caused by the characteristics inherent to self-arc-extinguishing semiconductor devices can be eliminated by the effect of item (1) above in the event of a DC short circuit accident, the reliability of DC switching circuits using self-arc-extinguishing semiconductor devices can be improved. It provides a high level of protection.
第1図はこの発明を定電圧形インバータ回路に実施した
場合の回路図、第2図は直流短絡事故電流波形図、第3
図はこの発明の他の実施例を定電圧形インバータ回路に
適用した場合の回路図である。
11・・・交流入力端子、12・・・入力しや断器、1
3・・・整流器、14・・・直流リアクトル、15・・
・直流フィルタコンデンサ、16・・・リアクトル、1
7・・・インバータ回路、18・・・出力しや断器、1
9・・・負荷、20・・・変流器、21・・・直流短絡
検出器、22・・・短絡保護回路、23,25・・・自
己消弧形半導体素子保護回路、24・・・短絡器。Fig. 1 is a circuit diagram when the present invention is implemented in a constant voltage inverter circuit, Fig. 2 is a DC short circuit fault current waveform diagram, and Fig. 3 is a diagram of the DC short circuit fault current waveform.
The figure is a circuit diagram when another embodiment of the present invention is applied to a constant voltage type inverter circuit. 11...AC input terminal, 12...Input switch, 1
3... Rectifier, 14... DC reactor, 15...
・DC filter capacitor, 16...Reactor, 1
7... Inverter circuit, 18... Output circuit breaker, 1
9... Load, 20... Current transformer, 21... DC short circuit detector, 22... Short circuit protection circuit, 23, 25... Self-extinguishing semiconductor element protection circuit, 24... short circuit.
Claims (1)
間に設けられる自己消弧形半導体素子から成る直流スイ
ッチング回路において、該直流スイッチング回路を介し
て前記直流電源が短絡される直流短絡事故時、直流短絡
事故電流の極性を検出し、極性が反転する時点以降に前
記自己消弧形半導体素子にしや断指令を与え直流短絡事
故を除去するようにしたことを特徴とする直流スイッチ
ング回路の保護方式。1. In a DC switching circuit consisting of a self-arc-extinguishing semiconductor element installed between a DC power source equipped with a smoothing capacitor and a smoothing reactor, in the event of a DC short circuit accident in which the DC power source is short-circuited via the DC switching circuit, a DC short circuit accident occurs. A protection method for a DC switching circuit, characterized in that the polarity of the current is detected, and after the polarity is reversed, a burnout command is given to the self-arc-extinguishing semiconductor element to eliminate a DC short circuit accident.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6047077A JPS6057293B2 (en) | 1977-05-26 | 1977-05-26 | DC switching circuit protection method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6047077A JPS6057293B2 (en) | 1977-05-26 | 1977-05-26 | DC switching circuit protection method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53146151A JPS53146151A (en) | 1978-12-19 |
JPS6057293B2 true JPS6057293B2 (en) | 1985-12-14 |
Family
ID=13143181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6047077A Expired JPS6057293B2 (en) | 1977-05-26 | 1977-05-26 | DC switching circuit protection method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6057293B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62127192U (en) * | 1986-02-05 | 1987-08-12 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2369725B1 (en) * | 2010-03-25 | 2012-09-26 | ABB Schweiz AG | Short circuiting unit |
-
1977
- 1977-05-26 JP JP6047077A patent/JPS6057293B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62127192U (en) * | 1986-02-05 | 1987-08-12 |
Also Published As
Publication number | Publication date |
---|---|
JPS53146151A (en) | 1978-12-19 |
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