JPS6056091A - Manufacture of black cr plated plate for collecting solar heat - Google Patents

Manufacture of black cr plated plate for collecting solar heat

Info

Publication number
JPS6056091A
JPS6056091A JP58163904A JP16390483A JPS6056091A JP S6056091 A JPS6056091 A JP S6056091A JP 58163904 A JP58163904 A JP 58163904A JP 16390483 A JP16390483 A JP 16390483A JP S6056091 A JPS6056091 A JP S6056091A
Authority
JP
Japan
Prior art keywords
plating
current
black
time
pulse current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58163904A
Other languages
Japanese (ja)
Other versions
JPS628517B2 (en
Inventor
Takuyuki Sato
佐藤 巧行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP58163904A priority Critical patent/JPS6056091A/en
Publication of JPS6056091A publication Critical patent/JPS6056091A/en
Publication of JPS628517B2 publication Critical patent/JPS628517B2/ja
Granted legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/40Solar thermal energy, e.g. solar towers

Abstract

PURPOSE:To obtain black Cr plating of high quality by using pulse current, periodically interrupting the supply of pulse current, properly regulating the period and by properly regulating the ratio of the integrated supply time at suplying time to the integrated one-supply time at interrupting time. CONSTITUTION:A metallic substrate is immersed in a plating bath contg. Cr ions, and electric current is supplied to manufacture a black Cr plated plate for collecting solar heat. At this time, pulse current is used as the electric current for plating, and the supply of the pulse current is periodically interrupted to form time zones in which the current is not continously supplied. The interval be tween a restarting point of the pulse current and the following restarting point is set as one period, and the period is repeated at 15-100Hz frequency. The ratio of the integrated supply time to the integrated non-supply time in one period is regulated to 0.5-20.

Description

【発明の詳細な説明】 本発明は黒色Crめつき太陽熱集熱板の製造方法に関し
、詳細には、金属基板表面に選択吸収特性が優れた黒色
Crめつきを効率良く形成する方法に関するものである
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a solar heat collector plate coated with black Cr, and more particularly, to a method for efficiently forming a black Cr plate with excellent selective absorption characteristics on the surface of a metal substrate. be.

太陽熱集熱板の性能を支配する重要な特性として選択吸
収特性が挙げられる。即ち選択吸収特性とは特定波長域
の光線を選択的に吸収する特性を言い、太陽光線を効率
良く吸収する為には、60006にの黒体放射エネルギ
ーに相当する0、8〜2.5μmの波長域のものを良く
吸収し、他方2.5〜20μmの赤外線領域における放
射率の少ない材料であることが望まれる。この様な選択
吸収特性を満足するものとしては種々のものが知られて
いるが、他方では苛酷な使用条件に対する耐久性(耐候
性、耐熱性、耐湿性、耐塩水性等を含む)を備えること
も要求される。
Selective absorption characteristics are an important characteristic that governs the performance of solar heat collector plates. In other words, the selective absorption characteristic refers to the characteristic of selectively absorbing light rays in a specific wavelength range.In order to efficiently absorb sunlight, it is necessary to use It is desired that the material absorbs well in the wavelength range and has low emissivity in the infrared region of 2.5 to 20 μm. Various materials are known that satisfy such selective absorption characteristics, but on the other hand, they must have durability against harsh usage conditions (including weather resistance, heat resistance, moisture resistance, salt water resistance, etc.). is also required.

この様な条件を兼備するものとして黒色Crめっきが注
目されているが、この場合目的にかなうめっき層の形成
が極めて困難であるという問題が指摘されている。即ち
黒色Crめっき層の選択吸収特性に影υを与えるのは膜
厚であることが分かつているが、良好な選択吸収特性を
示す為には、光線吸収率(α)が0.92程度以上で且
つ光線放射率(g)が0.15程度以下という2つの条
件を満足しなければならないが、この条件を満足する領
域は第1図に示す如く集熱板表面に形成する黒色Crめ
つき層の厚さを制御するに当って上−述の狭い範回を満
足する為にも可及的均一なものとする必要があるが、以
下に示す如く極めて困難なこととされている。
Black Cr plating is attracting attention as a material that satisfies these conditions, but it has been pointed out that in this case, it is extremely difficult to form a plating layer that meets the purpose. In other words, it is known that the film thickness affects the selective absorption characteristics of the black Cr plating layer, but in order to exhibit good selective absorption characteristics, the light absorption rate (α) must be about 0.92 or more. The area that satisfies these conditions is the black Cr plating formed on the surface of the heat collector plate as shown in Figure 1. In controlling the thickness of the layer, it is necessary to make it as uniform as possible in order to satisfy the above-mentioned narrow range, but as shown below, this is extremely difficult.

即ち現在の太陽熱集熱板は、例えば第2図(見取り図)
に示す様に幅が約180+m、長さが約2000 mm
の単位集熱板1に銅管2を溶接したものをユニットとし
、各ユニットにおける銅管2の両端をヘッダー管によっ
て複数個連結して組立てたものであり、黒色Crめつき
処理は該組立品をめっき浴に浸漬して行なっている。こ
の場合、例えば節3図に示す様に単位集熱板1とアノー
ド8の間隔lを一定にすることができればこの間の電流
密度(A / dm2)もほぼ一定になり、各集熱板1
の電荷ff1(C/m2)をほぼ等しくすることができ
るので、めっき厚さが均一になる。しかし実際の集熱板
1は以下に説明する如く不規則に歪んでいるから、lを
一定、即ち集熱板1の表面全体における電荷量を一定に
することができず、めっき厚さが不均一になる。即ち単
位集熱板1と銅管2は特殊なTIG溶接によって接合さ
れるが、溶接歪によって単位集熱板1は例えば第4図(
4)〜(ト)に示す様に変形する。従ってこの様な集熱
板1を黒色Crめっきしようとすると、例えば第5図に
略示する如く被めっき面とアノード8との距111i!
を一定にすることができず、lが短い部分では電荷量が
大きくなりすぎてめっき厚さが好適範囲を越え、lの長
い部分では電荷量が不足してめっき不足となり、集熱板
全体としての選択吸収特性が極端に低下する。また単位
集熱板1を溶接した後、溶接歪をなくす為に第6図に示
す様に波形に矯正加工する方法もあるが、この場合は四
部と凸部で電荷量が変ってくるので、四部はめつき不足
となり凸部はめつき厚が過剰になりやすい。
In other words, the current solar heat collector plate, for example, is shown in Figure 2 (floor plan).
As shown in the figure, the width is about 180+m and the length is about 2000mm.
A unit is made by welding copper tubes 2 to a unit heat collecting plate 1, and each unit is assembled by connecting a plurality of copper tubes 2 at both ends with a header tube, and the black Cr plating treatment is applied to the assembly. This is done by immersing it in a plating bath. In this case, if the distance l between the unit heat collecting plate 1 and the anode 8 can be made constant as shown in Section 3, the current density (A/dm2) between them will also be approximately constant, and each heat collecting plate 1
Since the electric charges ff1 (C/m2) can be made almost equal, the plating thickness becomes uniform. However, since the actual heat collecting plate 1 is irregularly distorted as explained below, it is not possible to keep l constant, that is, to make the amount of charge constant over the entire surface of the heat collecting plate 1, and the plating thickness is irregular. It becomes uniform. That is, the unit heat collecting plate 1 and the copper tube 2 are joined by special TIG welding, but due to welding distortion, the unit heat collecting plate 1 becomes, for example, as shown in Fig. 4 (
4) Transform as shown in (g). Therefore, when attempting to plate such a heat collecting plate 1 with black Cr, for example, as schematically shown in FIG. 5, the distance between the surface to be plated and the anode 8 is 111i!
cannot be kept constant, and in the parts where l is short, the amount of charge becomes too large and the plating thickness exceeds the preferred range, and in the parts where l is long, the amount of charge is insufficient, resulting in insufficient plating, and the overall heat collector plate The selective absorption properties of In addition, after welding the unit heat collecting plate 1, there is a method of straightening it into a waveform as shown in Figure 6 in order to eliminate welding distortion, but in this case, the amount of charge changes between the four parts and the convex part, so The four parts tend to be insufficiently plated, and the convex parts tend to have excessive plating thickness.

従って特定の厚さ範囲で且つ全体に亘って均一な厚さの
黒色Crめつき層を形成する為には、単位集熱板の溶接
歪をなくして平滑なものにする必要があるが、集熱板の
厚さは0.8麿程度と極めて薄肉であるので、溶接歪を
なくすことは実質上不可能である。それ故若干の溶接歪
を有する場合でも支障なく均一な黒色Crめつき層を形
成し得る様なめつき技術の開発が必要になる。
Therefore, in order to form a black Cr plating layer with a uniform thickness over the entire thickness in a specific thickness range, it is necessary to eliminate welding distortion of the unit heat collector plate and make it smooth. Since the thickness of the hot plate is extremely thin, about 0.8 mm, it is virtually impossible to eliminate welding distortion. Therefore, it is necessary to develop a smooth plating technique that can form a uniform black Cr plating layer without any problems even when there is some welding distortion.

本発明者等は上記の様な事情に着目し、めっき法を数倍
することによって、若干の溶接歪を有する単位集熱板に
対しても均一な黒色Crめっき層を形成することができ
、ひいては集熱板の選択吸収特性を高め得る様なめつき
技術を確立しようとして種々研究を進めてきた。その結
果、下地処理された金属基板をCrイオン含有めっき浴
に浸漬し、パルス電流を用いて電気めっき処理を行なえ
ば、若干の溶接歪を有する単位集熱板に対しても均一で
高性能の黒色Crめっき層が形成されることを見出し、
この事実を基にして先に特許出願を行なった(特願昭5
7−71085号)。
The present inventors focused on the above-mentioned circumstances, and by multiplying the plating method several times, it is possible to form a uniform black Cr plating layer even on a unit heat collector plate that has some welding distortion. Furthermore, various studies have been conducted in an effort to establish a plating technology that can improve the selective absorption characteristics of heat collecting plates. As a result, if the base-treated metal substrate is immersed in a plating bath containing Cr ions and electroplated using pulsed current, uniform and high-performance coating can be achieved even on unit heat collector plates with slight welding distortion. It was discovered that a black Cr plating layer was formed,
Based on this fact, I first filed a patent application (Japanese Patent Application
7-71085).

選択吸収特性の優れた黒色Crめつき層を得る為の改曽
策として現在量も広く研究されているのは、めっき浴組
成に工夫を加えるという方策であり、この種の方策とし
ては例えば特公昭56−27599号公報や特開昭56
−112494号公報等をはじめとして多くの提案があ
り、これらの中にはめつき温度や電流密度等が選択吸収
特性に影響を与える旨を明らかにしているものもある。
Currently, the most widely studied method for obtaining a black chromium plated layer with excellent selective absorption properties is to modify the plating bath composition. Publication No. 56-27599 and JP-A-56
There have been many proposals, including JP-A-112494, and some of these have clarified that plating temperature, current density, etc. affect selective absorption characteristics.

しかしながらこれら公知のめつき技術にしても、前述の
如く溶接歪によって変形した単位集熱板に適用した場合
は、被めっき面の電荷量が不均一になるので全体に亘っ
て均一なめつき層を得ることはできない。
However, even with these known plating techniques, when applied to a unit heat collector plate that has been deformed due to welding distortion as described above, the amount of charge on the plated surface becomes uneven, so it is difficult to form a uniform plating layer over the entire surface. You can't get it.

一方通常のCrめつき処理ではめっきのつき回りが悪い
ので、めっき電流としてはリップル分の少ない完全直流
が好ましいと考えられており、例えば8相整流器等の整
流器によってリップル分を極力小さくし平滑に整流され
た電源を使用するのが常識になっている。
On the other hand, in normal Cr plating processing, the plating coverage is poor, so it is considered preferable to use full direct current with less ripple as the plating current. For example, use a rectifier such as an 8-phase rectifier to minimize the ripple and smooth it. It has become common sense to use a rectified power supply.

ところが本発明者等が先の実験で確認したところでは、
めっき電流が断続的となるパルス状の電流を使用すれば
、選択吸収特性の優れためつき層を与え得る許容電流密
度(以下単に許容電流密度という)範囲が大幅に拡大し
、その結果被めっき材が第4図や第6図の様にひずんで
いてアノードとの距離j(第5図参照)が不均一になっ
た場合でも、表面全域に亘ってほぼ均整なめつき層を形
成することによって選択吸収特性の優れた黒色Crめつ
きが得られることが明らかとなった。前記先願発明はこ
うした結果を基に完成されたもので、許容電流密度範囲
の拡大によって優秀な黒色Crめつき層を実現性のある
ものとした技術的意義は極めて大きいと言える。更に先
願発明では、パルス電流の総通電時間(T1)と電流の
縁遠断時間(T2)の(T1/T2)の比、及び周波数
(1/〔T1十T2))を適正にコントロールすること
によって前記目的が一層確実に達成されることも明確に
した。またこうした目的は、パルス電流を一層して与え
る場合(以下無中断パルスという)のみならず、パルス
電流の供給自体を周期的に中断させた場合(以下中断パ
ルスという)にも達成し得る旨明らかにした。
However, as the inventors confirmed in a previous experiment,
If the plating current is an intermittent pulsed current, the range of allowable current density (hereinafter simply referred to as allowable current density) that can provide a plating layer with excellent selective absorption characteristics will be greatly expanded, resulting in a Even if the electrode is distorted as shown in Figures 4 and 6 and the distance j from the anode (see Figure 5) is uneven, it can be selected by forming a nearly uniform glazed layer over the entire surface. It has become clear that black Cr plating with excellent absorption properties can be obtained. The invention of the prior application was completed based on these results, and it can be said that the technical significance of making it possible to realize an excellent black Cr plated layer by expanding the allowable current density range is extremely great. Furthermore, in the prior invention, the ratio of (T1/T2) between the total conduction time (T1) of the pulse current and the edge-off time (T2) of the current, and the frequency (1/[T1 + T2)) are appropriately controlled. It was also made clear that the above objective could be achieved more reliably by doing so. Furthermore, it is clear that this purpose can be achieved not only when the pulse current is applied continuously (hereinafter referred to as uninterrupted pulse), but also when the pulse current supply itself is periodically interrupted (hereinafter referred to as interrupted pulse). I made it.

ところで上記先願発明で開示した技術のうち、中断パル
スめっきにおける前記(T1/T2)比及び周波数の好
適範囲は、無中断パルスめっきを採用した場合と同様、
パルス電流自体の電流波形を基準にして定めた。ところ
がその後の実験で、中断パルスめっきの好適条件を設定
するに当たっては、パルス通電時間とパルス電流中断時
間の縁り返しパターンを周波数設定の基準とすると共に
、上記パルス電流中断時間を加えた積算通電時間と81
算非通電時間の比を基準にして〔通電/非通電〕の時間
比を決めることにより、黒色Crめっき条件の管理が一
段と適格に行なわれることを確認し、更に追求を重ねた
結果本発明に到達した。
By the way, among the techniques disclosed in the above-mentioned prior invention, the preferred ranges of the (T1/T2) ratio and frequency in interrupted pulse plating are the same as in the case where uninterrupted pulse plating is adopted.
It was determined based on the current waveform of the pulse current itself. However, in subsequent experiments, when setting suitable conditions for interrupted pulse plating, we used the reversing pattern of the pulse energization time and pulse current interruption time as the reference for frequency setting, and also determined the integrated energization by adding the above pulse current interruption time. time and 81
It was confirmed that the black Cr plating conditions could be managed more appropriately by determining the time ratio of [energized/de-energized] based on the ratio of the calculated non-energized time, and as a result of further pursuit, the present invention was achieved. Reached.

即ち本発明は、金属基板をCrイオン含有めっき浴に浸
漬して通電し、黒色Crめつきの施された太尚熟集熱板
を製造する方法であって、めっき電流としてパルス電流
を用いると共に、該パルス電流の供給自体を周期的に中
断せしめて電流の連続非供給時間帯を形成し、パルス電
流の再開始点から次回再開始点までを1周期として15
〜100)Izの周波数で繰り返し、該1周期内の積算
通電時間(ΣTa)と積算非通電時間(ΣTz)の比を
0.5〜20として黒色Crめつきを行なうところに要
旨を有するものである。
That is, the present invention is a method for manufacturing a Taishangshu heat collection plate plated with black Cr by immersing a metal substrate in a plating bath containing Cr ions and applying current, in which a pulsed current is used as the plating current, and The supply of the pulse current itself is periodically interrupted to form a time period during which the current is not continuously supplied, and one period is 15 days from the restart point of the pulse current to the next restart point.
~100) The gist is that black Cr plating is performed repeatedly at a frequency of Iz, and the ratio of the cumulative energizing time (ΣTa) to the cumulative non-energizing time (ΣTz) within one cycle is 0.5 to 20. be.

即ち本発明では、例えばfiA7図囚、(ロ)に示す様
なパルス電流を採用すると共に、例えば第8図囚、(6
)に略示する如′(パルス電流自体を周期的に中断せし
めて電流の非供給時間帯を形成し、)句レス電流の再開
始点から次回再開始点までを1周期としてこの周期を適
正に調節すると共に、該ノ句しス電流通電時及び中断時
における積算通電時間(ΣTa)と積算非通電時間(Σ
Tz)の比(ΣTa/ΣTz )を適正に調整すること
によって、良好な黒色Crめっきを得ようとするもので
ある。向上記(ΣTa/ΣTz)比及び周波数は次の様
にしてめることができる。例えば箪8図(6)、(6)
に示す如< 、is、Jレス電流の通電時間をT1、非
通電時間をT2とし、14パルス連続発振後8パルス分
省略(又は負電圧供給)する繰り返し周期の通電パター
ンを採用した場合、1繰り返し単位における積算通電時
間(ΣTa )は[1−14XT1’)、積算非通電時
間(ΣTz)は〔14T2+3(T1+T2)〕となり
、(ΣTa)/(ΣTx)比は(t 4−71/(8T
1+1772)−)からめることができる。又上1a繰
り返しを1周期とする周波数(3)は、パルス電流の周
波数(X)を〔14パルス+(省略分の8パルス)〕で
除した値、即ち(x/17)としてめることができ、或
は上記(ΣTa)と(ΣTz )から〔1/(Σ’ra
+ΣTz)’:lとしてめることができる。
That is, in the present invention, for example, a pulse current as shown in FIG.
), the pulse current itself is periodically interrupted to form a non-supply time period, and one period is defined as the period from the restart point of the phraseless current to the next restart point. At the same time, the cumulative energizing time (ΣTa) and the cumulative de-energizing time (ΣTa) are adjusted when the current is energized and interrupted.
The objective is to obtain good black Cr plating by appropriately adjusting the ratio (ΣTa/ΣTz) of Tz). The ratio (ΣTa/ΣTz) and frequency can be determined as follows. For example, Kano 8 diagram (6), (6)
As shown in < , is, when the energization time of the J less current is set as T1, the non-energization time is set as T2, and a energization pattern with a repeating cycle in which 8 pulses are omitted (or negative voltage is supplied) after 14 continuous pulses is adopted, 1 The cumulative energization time (ΣTa) in the repetition unit is [1-14XT1'), the cumulative de-energization time (ΣTz) is [14T2+3(T1+T2)], and the (ΣTa)/(ΣTx) ratio is (t4-71/(8T).
1+1772)-) can be entwined. Also, the frequency (3) where one cycle is the repetition of the above 1a can be determined as the value obtained by dividing the frequency (X) of the pulse current by [14 pulses + (8 pulses for omission)], that is, (x/17). or from the above (ΣTa) and (ΣTz), [1/(Σ'ra
+ΣTz)': can be expressed as l.

そして種々実験の結果、前記(ΣTa/ΣTz )比が
0.5〜20の範囲となる様に調整すると共に、周波数
(3)を15〜1.00 iIz の範囲に設定すれば
、黒色Crめつきの許容電流密度範囲が大幅に拡大し、
被めっき面とアノードとの距離lに多少の差異があった
としても均一な黒色Crめつき層を形成し得ることが確
認された。
As a result of various experiments, it was found that by adjusting the ratio (ΣTa/ΣTz) to be in the range of 0.5 to 20 and setting the frequency (3) in the range of 15 to 1.00 iIz, black Cr metal The allowable current density range has been significantly expanded,
It was confirmed that even if there were some differences in the distance l between the surface to be plated and the anode, a uniform black Cr plating layer could be formed.

ちなみに第1表は、第8図囚、ノ)に示す繰り返し周期
のめつき電流を基準として、周波数(1)と(ΣTa/
ΣTz )比を種々変更した場合に$けるめっき性の実
験結果を示したものである。但し他のめつき条件はいず
れも下記の通りとした。
Incidentally, Table 1 shows the frequency (1) and (ΣTa/
This figure shows the experimental results of plating properties when the ΣTz) ratio was variously changed. However, all other plating conditions were as follows.

〔めっき条件〕[Plating conditions]

めっき時間二8分 浴 温 : 15〜17℃ 素地金属 :銅板(厚さ0.8m+、平均粗さRa =
 0.1μm) アノード :鉛(アノード面積/カソード面積=1) 浴 組 成:無水クロム酸801’//+触媒(硼酸又
は硝酸塩) 処理手順 :浸演説脂→水洗→酸洗→水洗−下地(Ni
)めつき→水洗 →黒色Crめつき→水洗→乾 燥 〔選択吸収特性測定法〕 吸収率α:積分球反射装置 測定波長域:0.8〜2.5μm 反射率ε:正反射装置 測定波長域:2.6〜25μm 尚比較の為、直流電源を使用した場合の結果及び連続パ
ルス電流(中断なし)を採用した場合の結果を第1表に
併記した。
Plating time: 28 minutes Bath temperature: 15-17℃ Base metal: Copper plate (thickness 0.8m+, average roughness Ra =
0.1μm) Anode: Lead (anode area/cathode area = 1) Bath composition: Chromic anhydride 801'//+catalyst (boric acid or nitrate) Treatment procedure: Immersion of grease → water washing → pickling → water washing - base ( Ni
) Plating → Water washing → Black Cr plating → Water washing → Drying [Selective absorption characteristic measurement method] Absorption rate α: Wavelength range measured by integrating sphere reflector: 0.8 to 2.5 μm Reflectance ε: Wavelength range measured by specular reflection device :2.6 to 25 μm For comparison, Table 1 also shows the results when a DC power source was used and the results when a continuous pulse current (without interruption) was used.

第1表からも明らかな様に、直流電源を採用した場合は
適正電流密度域が極めて狭く、前記lに相当の幅がある
被めっき材表面に均一な黒色Crめっき層を形成するこ
とは不可能である。これに対し中断なしの連続パルス電
源(無中断パルス)を採用すると(先願発明)、T1/
T2比及び1/〔T1+T2〕 を適正に調整すること
によって、適正電流密度域を大幅に拡大することができ
、前記lの変動にもかかわらず均一な黒色Crめっき層
を形成することが可能となる。更にパルス電源を用い周
期的な中断を行なった本発明法(中断パルス)を採用す
ると、(ΣTa/ΣTz )比及び1/〔ΣTa+ΣT
z)を適正に調整することによって適正電流密度域を更
に拡大することができ、前記lの変動許容幅が一段と拡
がると共に黒色Crめつき層の均一性を更に向上せしめ
得ることが理解される。しかしくΣTa/ΣTz ) 
比及び1/〔ΣTa+ΣTZ )の条件設定を誤まると
、下記の如く本発明の効果は半減してしまう。
As is clear from Table 1, when a DC power source is used, the appropriate current density range is extremely narrow, and it is impossible to form a uniform black Cr plating layer on the surface of the plated material, which has a considerable width in l. It is possible. On the other hand, if a continuous pulse power source without interruption (uninterrupted pulse) is adopted (prior invention), T1/
By appropriately adjusting the T2 ratio and 1/[T1+T2], the appropriate current density range can be greatly expanded, and it is possible to form a uniform black Cr plating layer despite the fluctuation of l. Become. Furthermore, if the method of the present invention (interrupted pulse) in which periodic interruptions are performed using a pulsed power source is adopted, the (ΣTa/ΣTz) ratio and 1/[ΣTa+ΣT
It is understood that by appropriately adjusting z), the appropriate current density range can be further expanded, the permissible range of variation in l can be further expanded, and the uniformity of the black Cr plating layer can be further improved. However, ΣTa/ΣTz)
If the conditions of the ratio and 1/[ΣTa+ΣTZ) are incorrectly set, the effects of the present invention will be halved as described below.

即ち第1表の結果から(ΣTa/ΣTz )比及び1/
〔ΣTa十ΣTz)がめつき形成に与える傾向をみると
、次の様に考えることができる。
That is, from the results in Table 1, the (ΣTa/ΣTz) ratio and 1/
Looking at the tendency that [ΣTa + ΣTz) has on plating formation, it can be considered as follows.

(ΣTa/ΣTz )比: 0.5未満ではめっきがつきにくくなる。しかし20を
越えると電流中断時間が極端に短くなって直流電源を使
用したときとの有意差がみられなくなり、許容電流密度
範囲を十分に拡大することができなくなる。そしてこれ
らの傾向からすると、(ΣTa/ΣTz )比の好まし
い範囲は0.6〜20と考えられる。
(ΣTa/ΣTz) ratio: If it is less than 0.5, plating becomes difficult to adhere. However, if it exceeds 20, the current interruption time becomes extremely short and there is no significant difference from when using a DC power supply, making it impossible to sufficiently expand the allowable current density range. Based on these trends, the preferable range of the (ΣTa/ΣTz) ratio is considered to be 0.6 to 20.

周波数(1/〔Σ’ra+ΣTz)):周波数が小さく
なると着色限界が次第に高電流密度側へ移行し、低電荷
部(凹部)にめっきがつきにくくなる。また周波数が大
きくなりすぎるとめつき層の黒味が低下し、選択吸収特
性が不良になる。第1表の結果からみて好ましい周波数
は15〜100 H2の範囲と考えられる。
Frequency (1/[Σ'ra+ΣTz)): As the frequency decreases, the coloring limit gradually shifts to the higher current density side, making it difficult for plating to adhere to low-charge areas (concave areas). Furthermore, if the frequency becomes too large, the blackness of the plating layer will decrease and the selective absorption characteristics will become poor. In view of the results in Table 1, the preferred frequency is considered to be in the range of 15 to 100 H2.

この様に本発明では、パルス電流を周期的に中断させな
がら通電することによって、許容電流密度範囲を大幅に
拡大することができ、被めっき面の凹凸によってアノー
ドとの距離に若干の差が生じた場合でも均一な黒色Cr
めっき層を形成することができる。尚無中断パルス及び
中断パルス操業時における電流非通電時に詔いては、設
備面及び経済面の制約から電流を完全に零とすることが
できない場合もあり得る。即ち電流を完全に零にすると
ピーク電流に対して実効電流が小さくなるので、電流を
断続することの効果を実質的に確保し得る範囲で若干の
電流を流したり、更には第8図(B)に示した様に僅か
なマイナス電流を流すことも可能である。尚実効電流が
小さくなるとピーク電流を大きくする必要が生じ、電源
装置を大型化しなければならなくなるので経済上及び設
備上の負担が増大する。
In this way, in the present invention, by periodically discontinuing the pulse current while passing the current, the allowable current density range can be greatly expanded. Uniform black Cr even when
A plating layer can be formed. Note that if the command is issued when the current is not flowing during uninterrupted pulse or interrupted pulse operation, it may not be possible to completely reduce the current to zero due to equipment and economic constraints. In other words, if the current is completely reduced to zero, the effective current will be smaller than the peak current, so it may be necessary to flow a small amount of current within a range that can substantially ensure the effect of intermittent current, or even to ) It is also possible to flow a small amount of negative current. Note that as the effective current decreases, it becomes necessary to increase the peak current, and the power supply device must be enlarged, which increases the economic and equipment burden.

本発明であれば、前述の様に許容電流密度範囲を拡大す
ることにより黒色Crめつき層全域の選択吸収特性を高
めることができるが、加えて以下に説明する様にめっき
浴中の不純カチオンの影響をあまり受けることなく長期
間適正なめつき状態を持続し得るという利点もある。即
ち集熱板を量産する場合に詔いては、処理示が増すにつ
れてめっき浴中のNl +Pb +Sn 、Fe IC
u 2+ 、B a 2+ 、 A g十等の不純カチ
オンが増加してくる。これらのうちNi+は前処理工程
であるNiめつき槽から処理材に付着し混入してくるも
のであり、Pb+、Sn+、Fe3+はアノード電極か
ら溶出し、Cu2+は処理材から溶出し、更にB a2
+ 、 A g+は不純アニオン(S04 やC1−等
)除去剤として浴中に添加されるものであり、これらの
不純カチオンがCr 6 +中に混入すると、めっき電
流として直流を用いる従来法では選択吸収特性を得る為
の許容電流密度範囲が狭くなってくる。例えば、新液又
は上記の様な不純カチオンで汚染された液を用いてめっ
きを行なった場合、新液の場合の許容電流密度範囲は1
2〜27A/dmと広いのに対し、各不純物カチオンを
1〜4f)/l含む汚染液の場合は9〜11A/dm2
と極めて狭くなっている。これに対し本発明に係るめっ
き法を採用すると、汚染液を用いた場合でも許容電流密
度範囲は従来に比して約10倍広くなる。即ちめっき電
流を通電−遮断することによって不純カチオンの影響が
著しく減少するので、めっき液交換の頻度を激減するこ
とが可能になる。
According to the present invention, the selective absorption characteristics of the entire black Cr plating layer can be improved by expanding the allowable current density range as described above, but in addition, as described below, impurity cations in the plating bath Another advantage is that a suitable state of plating can be maintained for a long period of time without being significantly affected by In other words, when mass producing heat collecting plates, as the processing temperature increases, Nl + Pb + Sn and Fe IC in the plating bath increase.
Impurity cations such as u 2+ , Ba 2+ , A g , etc. increase. Among these, Ni+ adheres to and mixes into the treated material from the Ni plating tank in the pretreatment process, Pb+, Sn+, and Fe3+ are eluted from the anode electrode, Cu2+ is eluted from the treated material, and furthermore, B a2
+ and A g+ are added to the bath as impurity anions (S04, C1-, etc.) removers, and if these impurity cations are mixed into Cr 6 +, the conventional method using direct current as the plating current cannot be selected. The allowable current density range for obtaining absorption characteristics becomes narrower. For example, when plating is performed using a new solution or a solution contaminated with impure cations as described above, the allowable current density range for the new solution is 1
The range is 2 to 27 A/dm2, while that of contaminated liquid containing 1 to 4 f)/l of each impurity cation is 9 to 11 A/dm2.
It is extremely narrow. On the other hand, when the plating method according to the present invention is adopted, the allowable current density range becomes about 10 times wider than that of the conventional method even when a contaminated liquid is used. That is, by turning on and off the plating current, the influence of impure cations is significantly reduced, making it possible to drastically reduce the frequency of replacing the plating solution.

本発明は概略以上の様に構成されており、その効果を要
約すれば下記の通りである。
The present invention is roughly constructed as described above, and its effects can be summarized as follows.

+1)許容電流密度範囲が広いので表面に凹凸あるいは
変形がある集熱板に適用した場合でも選択吸収特性の優
れた黒色Crめっき層を全体に亘って形成する“ことが
でき、めっき不良による歩留り低下を殆んど零にするこ
とができる。
+1) Since the allowable current density range is wide, even when applied to heat collector plates with uneven or deformed surfaces, it is possible to form a black Cr plating layer with excellent selective absorption characteristics over the entire surface, reducing yield due to plating defects. The decrease can be reduced to almost zero.

(2)めっき液組成やめつき電流等の変動による影響が
少ないので、これら変動要因の管理基準を下げることが
でき、めっき作票が容易になる。
(2) Since there is little influence from fluctuations in the plating solution composition, plating current, etc., the control standards for these fluctuation factors can be lowered, and the plating schedule becomes easier.

(3)良好な選択吸収特性を得る為の許容電流密度範囲
が広く、めっき層の発色状態が均一であるので、色むら
のない高品質の集熱板を得ることができる。
(3) Since the allowable current density range for obtaining good selective absorption characteristics is wide and the coloring state of the plating layer is uniform, a high-quality heat collecting plate without color unevenness can be obtained.

(4)浴中の不純カチオンの影響を殆んど受けないので
、経時的な選択吸収特性の変動がみられず、且つめつき
液交換の頻度を激減することができる。
(4) Since it is almost unaffected by impure cations in the bath, there is no change in selective absorption characteristics over time, and the frequency of replacing the pinning liquid can be drastically reduced.

(5)めっき液の成分組成等には殆んど無関係に同様の
効果を発揮するので、既存の黒色Crめつき装置に対し
て支障なく適用することができる。
(5) Since the same effect is exhibited almost regardless of the component composition of the plating solution, it can be applied to existing black Cr plating equipment without any problems.

(6)放射率が0.1θ以下という極めて低放射率の黒
色Crめつき層でも、電流密度を調整することによって
容易に得ることができる。即ちこの様な低放射率の黒色
crめつきは真空管式太陽熱集熱器用として極めて適し
たものであるが、現状ではこの様な黒色Crめっきを量
産蜆模で安定して形成することは極めて困難なこととさ
れている。しかし高温集熱用としての真空管式太陽熱集
熱器の需要は今後ますます増加して行くものと考えられ
るが、前述の如く本′発明であればその様な用途にも十
分適用できる黒色CrめつきJ−を得ることができる。
(6) Even a black Cr plated layer with an extremely low emissivity of 0.1θ or less can be easily obtained by adjusting the current density. In other words, such low emissivity black Cr plating is extremely suitable for vacuum tube solar collectors, but at present it is extremely difficult to form such black Cr plating stably in mass production. It is said to be a thing. However, the demand for vacuum tube type solar collectors for high-temperature heat collection is expected to continue to increase in the future, and as mentioned above, the present invention can be applied to black chromium heat collectors, which are fully applicable to such applications. It is possible to obtain a J- value.

尚通常の平板状太陽熱集熱板に要求される黒色Crめつ
き層の吸収率は0.92程度以上、放射率は0.15程
度以下であるが、真空管式太陽熱集熱板では集熱面から
の対流損失が殆んど零となるので残った放射損失を極力
低く押える(即ち放射率を低くする)必要があり、黒色
Crめっき層の要求特性としては、吸収率が0.85以
上、放射率が0.10(好ましくは0.05)以下が実
用可能な品質のめやすとされている。
In addition, the absorption rate of the black Cr plating layer required for ordinary flat solar heat collecting plates is about 0.92 or more, and the emissivity is about 0.15 or less, but in vacuum tube type solar heat collecting plates, the heat collecting surface is Since the convective loss from the black Cr plating layer is almost zero, it is necessary to keep the remaining radiation loss as low as possible (that is, lower the emissivity).The required characteristics of the black Cr plating layer are an absorption rate of 0.85 or more, An emissivity of 0.10 (preferably 0.05) or less is considered to be a standard for practical quality.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は黒色Crめつき層の膜厚及び電荷と吸収率及び
放射率の関係を示すグラフ、第2図は太陽熱集熱板を例
示する見取り図、第3図は単位集熱板の理想的なめつき
状況を示す説明図、第4図(A)〜@)は集熱板の溶接
歪状態を示す説明図、第5図は実際のめつき状況を示す
説明図、第6図は歪取り矯正加工した単位集熱板を例示
する見取り図、第7図(A)、(ロ)は本発明で使用す
るパルス電流パターンを示す図、第8図(A)、(6)
、(Qは実験で採用した電流波形を示す図である。 1・・・単位集熱板、2・・・細管。 出願人株式会社神戸製鋼所 椙葺&#(す) い4冊 ()) く 味 w 1) 〉
Figure 1 is a graph showing the relationship between the thickness and charge of the black Cr plating layer and the absorptivity and emissivity, Figure 2 is a sketch illustrating a solar heat collector plate, and Figure 3 is an ideal unit heat collector plate. An explanatory diagram showing the licking situation, Fig. 4 (A) to @) is an explanatory diagram showing the welding distortion state of the heat collecting plate, Fig. 5 is an explanatory diagram showing the actual plating situation, and Fig. 6 is an explanatory diagram showing the welding distortion state of the heat collecting plate. A sketch diagram illustrating a straightened unit heat collecting plate, FIGS. 7(A) and (B) are diagrams showing pulse current patterns used in the present invention, and FIGS. 8(A) and (6).
, (Q is a diagram showing the current waveform adopted in the experiment. 1... Unit heat collection plate, 2... Thin tube. Applicant Kobe Steel, Ltd. Sugibuki &#(Su)i 4 volumes () ) Ku taste w 1) 〉

Claims (1)

【特許請求の範囲】[Claims] 金属基板をCrイオン含有めっき浴に浸漬して通電し、
黒色Crめつきの施された太陽熱集熱板を製造する方法
であって、めっきwt流としてパルス電流を用いると共
に、該パルス電流の供給自体を周期的に中断せしめて電
流の連続非供給時間帯を形成し、パルス電流の再開始点
から次回再開始点までを1周期として15〜100 H
zの周波数で繰り返し、該1周期内の積算通電時間と積
算非通電時間の比を0.5〜20とすることを特徴とす
る黒色Crめつき太陽熱集熱板の製造方法。
The metal substrate is immersed in a plating bath containing Cr ions and energized,
A method for manufacturing a solar heat collecting plate plated with black Cr, which uses a pulsed current as the plating wt flow, and periodically interrupts the supply of the pulsed current to stop the continuous supply of current. The period from the restart point of the pulse current to the next restart point is defined as one cycle for 15 to 100 H.
A method for manufacturing a black Cr-plated solar heat collecting plate, characterized in that the ratio of the cumulative energized time to the cumulative non-energized time within one cycle is 0.5 to 20 by repeating the process at a frequency of z.
JP58163904A 1983-09-06 1983-09-06 Manufacture of black cr plated plate for collecting solar heat Granted JPS6056091A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58163904A JPS6056091A (en) 1983-09-06 1983-09-06 Manufacture of black cr plated plate for collecting solar heat

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58163904A JPS6056091A (en) 1983-09-06 1983-09-06 Manufacture of black cr plated plate for collecting solar heat

Publications (2)

Publication Number Publication Date
JPS6056091A true JPS6056091A (en) 1985-04-01
JPS628517B2 JPS628517B2 (en) 1987-02-23

Family

ID=15783032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58163904A Granted JPS6056091A (en) 1983-09-06 1983-09-06 Manufacture of black cr plated plate for collecting solar heat

Country Status (1)

Country Link
JP (1) JPS6056091A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08240482A (en) * 1995-03-03 1996-09-17 Takenaka Eng Kk Infrared detecting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08240482A (en) * 1995-03-03 1996-09-17 Takenaka Eng Kk Infrared detecting device

Also Published As

Publication number Publication date
JPS628517B2 (en) 1987-02-23

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