JPS6056077A - Titanium etching solution - Google Patents
Titanium etching solutionInfo
- Publication number
- JPS6056077A JPS6056077A JP16432483A JP16432483A JPS6056077A JP S6056077 A JPS6056077 A JP S6056077A JP 16432483 A JP16432483 A JP 16432483A JP 16432483 A JP16432483 A JP 16432483A JP S6056077 A JPS6056077 A JP S6056077A
- Authority
- JP
- Japan
- Prior art keywords
- acid
- etching
- titanium
- etching solution
- soln
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
Abstract
Description
【発明の詳細な説明】 本発明はチタニウムのエツチング液の改良に関する。[Detailed description of the invention] The present invention relates to improvements in etching solutions for titanium.
従来、チタニウムのエツチング液としては、シュウ酸液
や熱塩酸浴などが使用されている。Conventionally, oxalic acid solution, hot hydrochloric acid bath, etc. have been used as etching solutions for titanium.
ところで、シュウ酸液はエツチング速度が遅く、時間が
かかり過ぎる。即ち、特公昭４４−１９９６６号公報に
記載の“チタンまたはチタン基合金の表面腐食法”に述
べられているように、例えば８０℃（±５℃）のシュウ
酸１００ｇ／ Ｊの水溶液で工業的に純粋なチタニウム
の薄板を腐食すると、１時間に約２〜４μｍしか減耗し
ない。However, oxalic acid solution has a slow etching speed and takes too much time. That is, as described in "Surface corrosion method of titanium or titanium-based alloy" described in Japanese Patent Publication No. 44-19966, for example, an aqueous solution of 100 g/J of oxalic acid at 80°C (±5°C) is used for industrial corrosion. When a thin plate of pure titanium is corroded, it only wears out about 2 to 4 μm per hour.
また熱塩酸浴は、高温処理をする為、有害な塩化水素ガ
スが発生するものであり、塩酸浴の濃度調整が難しいも
のである。Further, since the hot hydrochloric acid bath performs high-temperature treatment, harmful hydrogen chloride gas is generated, and it is difficult to adjust the concentration of the hydrochloric acid bath.
本発明は、斯かる問題を解消すべくなされたものであり
、チタニウムのエツチング速度が早く、塩化水素ガスの
ような有害なガスが発生することのないチタニウムのエ
ツチング液を提供せんとするものである。The present invention has been made to solve this problem, and aims to provide a titanium etching solution that has a high etching speed and does not generate harmful gases such as hydrogen chloride gas. be.
本発明によるチタニウムのエツチング液は、１１中にシ
ュウ酸又はクエン酸若しくは聞％ギ酸５０〜５００ ’
ｇ等の有機酸と、硫酸１０〜６００ｇを含む水溶液から
成るものである。The titanium etching solution according to the present invention contains oxalic acid or citric acid or 50-500% formic acid in 11.
It consists of an aqueous solution containing 10 to 600 g of sulfuric acid and an organic acid such as 10 g to 600 g.
本発明のエツチング液に於いて、■β中にシュウ酸又は
クエン酸若しくはギ酸５０〜５００ｇを含むとした理由
は、エツチング部分の腐食面を均一にする為で、５０ｇ
未満では効果が薄く、５００ｇを超えるとエツチング速
度が遅くなるものである。In the etching solution of the present invention, the reason why 50 to 500 g of oxalic acid, citric acid, or formic acid is included in β is to make the corroded surface of the etched part uniform, and 50 g
If it is less than 500 g, the effect will be weak, and if it exceeds 500 g, the etching rate will be slow.
１７！中に硫酸１０〜６００ｇを含むとした理由は、エ
ツチング速度を早くする為で、１０ｇ／ｊ！未満ではそ
の効果が薄く、６００ｇ／ ｊ！を超えるとエツチング
液が分解し、液の寿命が短くなり、エツチング速度は遅
くなるからである。17! The reason why 10 to 600 g of sulfuric acid is included is to increase the etching speed, which is 10 g/j! If it is less than 600g/j!, the effect will be weak. This is because, if the temperature exceeds 100%, the etching solution will decompose, the life of the solution will be shortened, and the etching speed will be slowed down.
次に本発明によるチタニウムのエツチング液の効果を明
らかにする為にその具体的な使用実施例と従来のエツチ
ング液の具体的な使用実施例について説明する。Next, in order to clarify the effects of the titanium etching solution according to the present invention, specific examples of its usage and specific usage examples of a conventional etching solution will be described.
〔本発明のエツチング液の使用実施例１〕■７！中にシ
ュウ酸２００ｇと硫酸３６０ｇを含む水溶液の８０℃±
５℃静止浴中に、工業的に純粋なチタニウムの薄板（寸
法１寵Ｘ １０ｍ Ｘ ２０ｍｍ）を約１００分浸漬し
た処、平均で２０μｍエツチングできた。[Example 1 of using the etching solution of the present invention] ■7! 80℃± of an aqueous solution containing 200g of oxalic acid and 360g of sulfuric acid.
When a thin plate of industrially pure titanium (dimensions: 1 cm x 10 m x 20 mm) was immersed in a static bath at 5° C. for about 100 minutes, it was etched by an average of 20 μm.
〔本発明のエツチング液の使用実施例２〕ｌｌ中にギ酸
２００ｇと硫酸１８０ ｇを含む水溶液の１００℃±１
０℃静止浴中に、工業的に純粋なチタニウムの薄板（寸
法１ ｗｍ Ｘ １０ｍ Ｘ ２０ｍ ）を約１００分
浸漬した処、平均で１０μｍエツチングできた。[Example 2 of use of the etching solution of the present invention] An aqueous solution containing 200 g of formic acid and 180 g of sulfuric acid in 1 liter at 100°C ±1
When a thin plate of industrially pure titanium (dimensions: 1 wm x 10 m x 20 m) was immersed in a 0°C static bath for about 100 minutes, it was etched by an average of 10 μm.
〔従来のエツチング液の使用実施例１〕ＩＡＩ中にシュ
ウ酸５０ｇを含む溶液の７５℃±５℃静止浴中に、工業
的に純粋なチタニウムの薄板（寸法１寵Ｘ ｌＯｍ Ｘ
２Ｑｍ ）を約１００分浸漬した処、平均で５μｍエ
ツチングできた。[Example 1 of use of conventional etching solution] A thin plate of industrially pure titanium (dimensions 1 cm x lOm
2Qm) was soaked for about 100 minutes, and an average of 5 μm of etching was achieved.
〔従来のエツチング液の使用実施例２〕１２中にシュウ
酸２００ｇを含む溶液の８０℃±５℃静止浴中に、工業
的に純粋なチタニウムの薄板（寸法２１１１１ ×２０
鶴×５０璽寵）を約１２０分浸漬した処、平均で８μｍ
エツチングできた。[Example 2 of use of conventional etching solution] A thin plate of industrially pure titanium (dimensions 21111 × 20
The average diameter of 8 μm after soaking a crane (50 x 50 cranes) for about 120 minutes.
I was able to etch it.
〔従来のエツチング液の使用実施例３〕ＩＰ中にクエン
酸１００ｇを含む溶液の８０℃±５℃静止浴中に、工業
的に純粋なチタニウムの薄板（寸法１ ｍ＋＋ ｘ’
Ｌｏｗ Ｘ ２０ｍ ）を約１８０分浸漬した処、平均
で１μｍエツチングできた。[Example 3 of use of conventional etching solution] A thin plate of industrially pure titanium (dimensions 1 m++ x'
Low x 20m) was immersed for about 180 minutes, and etching was achieved by an average of 1 μm.
然してこれらチタニウムの薄板各１００枚の表面粗さを
測定した処、下記の表に示すような結果を得た。When the surface roughness of each of 100 thin titanium plates was measured, the results shown in the table below were obtained.
上記の表で明らかなように本発明の実施例１゜２のエツ
チング液でエツチングしたチタニウムの薄板の表面粗さ
は、従来の実施例１〜３のエツチング液でエツチングし
たチタニウムの薄板の表面粗さと略同等で、ばらつきが
小さく略均−な腐食面であった。As is clear from the above table, the surface roughness of the titanium thin plate etched with the etching solutions of Examples 1 and 2 of the present invention is the same as that of the titanium thin plate etched with the conventional etching solutions of Examples 1 to 3. The corrosion surface was almost uniform, with little variation.
以上の説明で判るように本発明のチタニウムのエツチン
グ液は、エツチング速度が早くて単位時間当りの腐食減
耗量が多く、極めて効率が良いものであり、しかもその
エツチング液によりエツチングすると表面粗さの略均−
な腐食面を得ることができる。また本発明のエツチング
液は、従来のエツチング液のように有害な塩化水素ガス
が発生することがないので、作業上安全である等の優れ
た効果がある、
出願人 田中貴金属工業株式会社As can be seen from the above explanation, the titanium etching solution of the present invention has a high etching rate and a large amount of corrosion loss per unit time, and is extremely efficient.Moreover, when etching with this etching solution, the surface roughness can be reduced. Approximately average
A corroded surface can be obtained. In addition, the etching solution of the present invention does not generate harmful hydrogen chloride gas unlike conventional etching solutions, so it has excellent effects such as being safe for work.Applicant: Tanaka Kikinzoku Kogyo Co., Ltd.
Claims (1)
０ｇ等の有機酸と、硫酸１０〜６００ ｇを含む水溶液
から成るチタニウムのエツチング液。■ Oxalic acid, citric acid, or formic acid in β 50-50
A titanium etching solution consisting of an aqueous solution containing 0 g of an organic acid and 10 to 600 g of sulfuric acid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16432483A JPS6056077A (en) | 1983-09-07 | 1983-09-07 | Titanium etching solution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16432483A JPS6056077A (en) | 1983-09-07 | 1983-09-07 | Titanium etching solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6056077A true JPS6056077A (en) | 1985-04-01 |
Family
ID=15790993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16432483A Pending JPS6056077A (en) | 1983-09-07 | 1983-09-07 | Titanium etching solution |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6056077A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5800726A (en) * | 1995-07-26 | 1998-09-01 | International Business Machines Corporation | Selective chemical etching in microelectronics fabrication |
| US8221639B2 (en) | 2005-02-24 | 2012-07-17 | Biomet 3I, Llc | Surface treatment methods for implants made of titanium or titanium alloy |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58147561A (en) * | 1982-02-25 | 1983-09-02 | Tanaka Kikinzoku Kogyo Kk | Pretreating bath for titanium and titanium alloy |
-
1983
- 1983-09-07 JP JP16432483A patent/JPS6056077A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58147561A (en) * | 1982-02-25 | 1983-09-02 | Tanaka Kikinzoku Kogyo Kk | Pretreating bath for titanium and titanium alloy |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5800726A (en) * | 1995-07-26 | 1998-09-01 | International Business Machines Corporation | Selective chemical etching in microelectronics fabrication |
| US8221639B2 (en) | 2005-02-24 | 2012-07-17 | Biomet 3I, Llc | Surface treatment methods for implants made of titanium or titanium alloy |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3905907A (en) | Solutions for chemical dissolution treatment of metal materials | |
| CA1075570A (en) | Method of treating surface of copper and its alloys | |
| US5538152A (en) | Stabilizing composition for inorganic peroxide solutions | |
| GB1351950A (en) | Method of removing mercury vapour from gases | |
| EP0349600B1 (en) | Improved copper etchant compositions | |
| US5290362A (en) | Striping process for stripping compounds of titanium from base metals | |
| US3537926A (en) | Chemical brightening of iron-containing surfaces of workpieces | |
| US3373113A (en) | Process for etching copper printed circuits | |
| CN100519840C (en) | Magnesium alloy surface phosphorization treatment method | |
| JPS6056077A (en) | Titanium etching solution | |
| CN109852970A (en) | A kind of dual oxide component aluminium etching solution | |
| US3761313A (en) | Stripping of coated titanium electrodes | |
| US3761312A (en) | Stripping of coated titanium electrodes | |
| JP4580085B2 (en) | Method for etching metal tin or tin alloy and metal tin or tin alloy etchant | |
| JP3010496B2 (en) | Electrode for water electrolysis and method for producing the same | |
| GB1406568A (en) | Electrolytic surface preparation process for recoating of used coated metallic electrodes | |
| US2832730A (en) | Electrolytic production of elemental boron | |
| JP2989265B2 (en) | Method of peeling titanium compound from base metal | |
| US3006827A (en) | Method of pickling titanium and compositions used therein | |
| JPS602392B2 (en) | Pickling method for stainless steel that suppresses NOx generation | |
| GB1321646A (en) | Process for surface treatment of zirconium-containing cladding materials for fuel elements or other components for nuclear reactors | |
| US3264219A (en) | Method of pickling and chemically milling zirconium and zirconium alloys | |
| KR100368207B1 (en) | Electrolytic pickling solution for cold annealed austenitic stainless steel sheet | |
| JPH065670B2 (en) | Surface treatment method for silicon wafer | |
| Bala | Limiting Diffusional Currents of Oxygen Reduction in 0.5—11 M Sulphuric Acid |