JPS6055611A - Cleaning method for inside of vacuum chamber - Google Patents

Cleaning method for inside of vacuum chamber

Info

Publication number
JPS6055611A
JPS6055611A JP16262483A JP16262483A JPS6055611A JP S6055611 A JPS6055611 A JP S6055611A JP 16262483 A JP16262483 A JP 16262483A JP 16262483 A JP16262483 A JP 16262483A JP S6055611 A JPS6055611 A JP S6055611A
Authority
JP
Japan
Prior art keywords
vacuum chamber
cleaning fluid
dust
cleaning liquid
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16262483A
Other languages
Japanese (ja)
Other versions
JPH0116309B2 (en
Inventor
Hirosane Takei
武井 宏真
Tsugio Chiba
千葉 次雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Ulvac Inc
Priority to JP16262483A priority Critical patent/JPS6055611A/en
Publication of JPS6055611A publication Critical patent/JPS6055611A/en
Publication of JPH0116309B2 publication Critical patent/JPH0116309B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

PURPOSE:To remove dust generated in a vacuum chamber simply and quickly by jetting a stream of cleaning fluid using a nozzle provided in the vacuum chamber to clean the inside of the vacuum chamber. CONSTITUTION:Nozzles 4 turnably provided at corners in a vacuum chamber 1 having an evaporation source 2 in the lower part and a drive device 3 for a substrate in the upper part is supplied with cleaning fluid from a cleaning fluid circulation device 5 via a feed pipe 6. A cleaning fluid which jets into the inside of the vacuum chamber 1 washes off dust such as evaporated substances attached to inner wall surface 1a and the drive device 3 and returns to a tank 8 via a discharge pipe 14 in the lower part by the help of a discharge pump 12. Hereinafter, gas for drying is supplied to the nozzles 4 from a gas source 13 to dry the wet inside of the vacuum chamber 1. This allows the number of dust in the vacuum chamber to be largely reduced with comparative simplicity and a short time and without overhauls.

Description

【発明の詳細な説明】 本発明は真空蒸着室、スパッタリング室、化学蒸着室等
の真空室内のクリーニング方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for cleaning vacuum chambers such as vacuum deposition chambers, sputtering chambers, chemical vapor deposition chambers, and the like.

一般にこの種の真空室はサブストレートに蒸着。Generally, this kind of vacuum chamber is used for deposition on a substrate.

スパッタリング等の処理を施し、工0その他のエレクト
ロニクス機器等の製造するに使用されるが、近時これら
の機器は超LSIのようにマイクル化される傾向にある
ので該室内の塵芥数を高度に減少させ塵芥がサブストレ
ー トに付着することによりLSI回路の断線等が発生
することを防止する必要がある。従来、該真空室内に送
り込まれるサブストレートはこれに塵芥が付着して該室
内に持込まれないように予め洗浄されるので外部から塵
芥が持込まれることは少ないが、真空室内では例えば内
壁、サブストレート駆動装置等に付着した蒸発物質、ス
パッタ物質の剥落によシ或はサブストレート駆動装置の
摺動部分から塵芥が発生するので該真空室をオーバーホ
ールして塵芥を清掃するか塵芥の舞い上りを防ぐように
緩つくりと時間を掛けて真空室内を排気する手段を構じ
て蒸着等に際してサブストレートに塵芥が付着すること
を防止している。しかし乍らこのような塵芥付着防止手
段では時間が掛りサブストレートの処理能率が低下して
好ましくない。
Processes such as sputtering are applied to the manufacturing of other electronic devices, but as these devices are becoming more micro-sized such as ultra-LSIs, the amount of dust in the room has to be reduced to a high degree. It is necessary to prevent wire breakage of LSI circuits from occurring due to dust adhering to the substrate. Conventionally, the substrate fed into the vacuum chamber is cleaned in advance to prevent dust from adhering to it and bringing it into the chamber, so it is rare for dust to be brought in from the outside. Dust is generated due to the peeling off of evaporated substances and sputtered substances attached to the drive device, etc., or from the sliding parts of the substrate drive device, so overhaul the vacuum chamber and clean the dust or prevent the dust from flying up. In this way, a loose structure and means for exhausting the inside of the vacuum chamber over time are provided to prevent dust from adhering to the substrate during vapor deposition. However, such a means for preventing adhesion of dust is undesirable because it takes time and reduces substrate processing efficiency.

本発明はこうした真空室内に発生する塵芥を簡単迅速に
排除することを目的としたもので、真空蒸着室等の真空
室内にノズルを設け、これより洗浄液、気体の混入した
洗浄液或は洗浄液の蒸気等の洗浄流体を噴出させて該真
空室内を洗浄することを特徴とする。
The purpose of the present invention is to easily and quickly eliminate the dust generated in such a vacuum chamber, and a nozzle is installed in a vacuum chamber such as a vacuum deposition chamber, and from this nozzle is used to remove cleaning liquid, gas-containing cleaning liquid, or cleaning liquid vapor. The vacuum chamber is characterized in that the interior of the vacuum chamber is cleaned by jetting out a cleaning fluid such as the following.

本発明の実−例を真空蒸着室の洗浄に適用した場合につ
き説明するに、第1図に於て(1)は下方に蒸発iil
;i+21と−に方にサブストト−トの駆動装置11(
31を備えた真空室、(4)は該真空室(1)の隅部に
旋回自在に設けたノズルを示し、該ノズル(4)には洗
浄液循環装置(5)から供給管(6)を介して洗浄流体
が供給される。該洗浄液循環装置(5)は例えばヒータ
(7)を備えた洗浄液タンク(8)、送り出しポンプ(
9)、フィルタ00)、魚溜器(Ill、排出ポンプ0
21及びN、ガス等の乾燥用ガス小ン0湯で476成さ
れ、該洗浄液タンク(8)に於て蒸溜器0υによりアル
コールフレオン或はトリクレン等の純度を高めた洗浄液
を作夛、これを送り出しポンプ(9)によりフィルタ0
Iを介して供給管(6)へと送る。この場合真空室(1
)内に噴出した洗浄液はその内壁面(1a)や駆動装置
(3)に付着した蒸発物質等の塵芥を洗い落とし、下方
の排出管(14)から排出ポンプ0湯によりタンク(8
)へと戻る。その後ガス源a3からノズル(4)に乾燥
用のガスが供給され、醐れた真空室(1)内を乾燥する
7、(目は真空室(1)を真空化するに使用される真空
ポンプである。該洗浄液循環装置(5)は第2図示のよ
うにフィルタ0旬と並列にヒータを備えたボイラ兼純化
装置(161を設け、これにタンク(8)からの洗浄液
を送シ、発生した蒸気を供給管(6)に洗浄液と共に混
合させるようにしてもよい。また洗浄液の噴射後に蒸気
を噴射のように設けたヒータQ81で加熱し乍らノズル
(4)から洗浄液を噴出すればより一層クリーンに真空
室[11内を洗浄することが可能であり、かつ急速に乾
燥させることが出来る。仝図示のように使用済の洗浄液
を排出管α4から排液タンク(L′0に捨てる形式とす
るようにしてもよい。
To explain the case where the present invention is applied to cleaning a vacuum deposition chamber, (1) in FIG.
; i+21 and - direction subtote drive device 11 (
31, (4) indicates a nozzle that is rotatably provided in the corner of the vacuum chamber (1), and a supply pipe (6) is connected to the nozzle (4) from the cleaning liquid circulation device (5). A cleaning fluid is supplied through the cleaning fluid. The cleaning liquid circulation device (5) includes, for example, a cleaning liquid tank (8) equipped with a heater (7), a delivery pump (
9), filter 00), fish reservoir (Ill, discharge pump 0)
In the cleaning liquid tank (8), a cleaning liquid with increased purity such as alcohol freon or trichlene is prepared using a distiller 0υ in the cleaning liquid tank (8). Filter 0 by delivery pump (9)
I to the supply pipe (6). In this case, the vacuum chamber (1
) The cleaning liquid sprayed out into the tank (8
). After that, drying gas is supplied from the gas source a3 to the nozzle (4) to dry the inside of the vacuum chamber (1). As shown in the second figure, the cleaning liquid circulation device (5) is equipped with a boiler and purification device (161) equipped with a heater in parallel with the filter 0, and the cleaning liquid from the tank (8) is sent to this and generated. The steam may be mixed with the cleaning liquid in the supply pipe (6).Also, it is better if the cleaning liquid is jetted from the nozzle (4) while heating the steam with a heater Q81 provided in the manner of jetting after the cleaning liquid is jetted. It is possible to clean the inside of the vacuum chamber [11] even more cleanly, and it can be dried quickly.As shown in the figure, the used cleaning solution can be disposed of from the discharge pipe α4 to the drain tank (L'0). It may be done as follows.

第4図はサブストレートを取付けたキャリア翰をパルプ
(25)で区画された仕込室Qυ、カソード電極(22
1を備えたスパッタリング室(ハ)及び取出室(24J
を順次通過させる式のスパッタ装置に於て各室(2υ@
C4)を洗浄する場合を示し、この場合各室の上方に夫
々ノズル(41を設け、洗浄液循環装置(5)から洗浄
液、蒸気混入の洗浄液、洗浄液の蒸気、乾燥用ガスを供
給して洗浄される。尚、この場合も洗浄液循環装置(5
)に代え第5図示のように排出管Q41を排液タンクO
Dに捨てる非循環形に構成してもよい。Q!ilはクラ
イオポンプの排気口を示す。尚、7レオン・アルコール
或はこれらの混合液を洗浄液として使用する場合には蒸
気液化用に冷却器(至)が設けられる。
Figure 4 shows the carrier cage with the substrate attached, the preparation chamber Qυ divided by pulp (25), and the cathode electrode (22).
1 sputtering chamber (c) and extraction chamber (24J
Each chamber (2υ@
In this case, a nozzle (41) is provided above each chamber, and the cleaning liquid, steam-containing cleaning liquid, cleaning liquid vapor, and drying gas are supplied from the cleaning liquid circulation device (5). In this case as well, the cleaning liquid circulation device (5
) instead of connecting the drain pipe Q41 to the drain tank O as shown in Figure 5.
It may also be constructed in a non-circulating manner in which the waste is discarded in D. Q! il indicates the exhaust port of the cryopump. Incidentally, when 7 Leon alcohol or a mixture thereof is used as the cleaning liquid, a cooler is provided for vapor liquefaction.

本発明は真空度が低下するため水分の進入がタブ−とさ
れた真空室内にノズルを設け、これより洗浄流体を噴出
させて真空室の内壁、サブストレート駆動装置等に付着
した塵芥を排出するようにしたもので、これによるとき
は比較的簡単且つ短時間でオーバーホールすることなく
真空室の塵芥数を大幅に減少出来、サブストレートの不
良品率を大きく減少させ得ると共に処理能率も向上する
等の効果がある。
In the present invention, a nozzle is provided in a vacuum chamber in which moisture is prohibited from entering due to a decrease in the degree of vacuum, and cleaning fluid is jetted from the nozzle to discharge dust adhering to the inner wall of the vacuum chamber, substrate drive device, etc. This makes it possible to significantly reduce the amount of dust in the vacuum chamber without overhauling it in a relatively simple and short time, greatly reducing the rate of defective substrates, and improving processing efficiency. There is an effect.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の実施例の線図、第2図乃至第5図は本
発明の他の実施例の線図である。 Ill・・・・・・真 空 室 (4)・・・・・・ノ ズ ル 外2名
FIG. 1 is a diagram of an embodiment of the invention, and FIGS. 2 to 5 are diagrams of other embodiments of the invention. Ill...Vacuum chamber (4)...2 people outside the nozzle

Claims (1)

【特許請求の範囲】[Claims] 真空蒸着室等の真空室内にノズルを設け、これより洗浄
液1.気体の混入した洗浄液或は洗浄液の蒸気等の洗浄
流体を噴出させて該真空室内の塵芥を排除することを特
徴とする真空室内クリーニング方法
A nozzle is provided in a vacuum chamber such as a vacuum deposition chamber, and cleaning liquid 1. A vacuum chamber cleaning method characterized by ejecting a cleaning fluid such as a cleaning liquid mixed with gas or the vapor of the cleaning liquid to eliminate dust in the vacuum chamber.
JP16262483A 1983-09-06 1983-09-06 Cleaning method for inside of vacuum chamber Granted JPS6055611A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16262483A JPS6055611A (en) 1983-09-06 1983-09-06 Cleaning method for inside of vacuum chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16262483A JPS6055611A (en) 1983-09-06 1983-09-06 Cleaning method for inside of vacuum chamber

Publications (2)

Publication Number Publication Date
JPS6055611A true JPS6055611A (en) 1985-03-30
JPH0116309B2 JPH0116309B2 (en) 1989-03-23

Family

ID=15758142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16262483A Granted JPS6055611A (en) 1983-09-06 1983-09-06 Cleaning method for inside of vacuum chamber

Country Status (1)

Country Link
JP (1) JPS6055611A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62196367A (en) * 1986-02-25 1987-08-29 Ulvac Corp Cleaning device for vacuum treatment vessel
JPS62205268A (en) * 1986-03-04 1987-09-09 Ulvac Corp Device for cleaning vacuum treatment tank
JPH06272027A (en) * 1993-03-17 1994-09-27 Fuji Photo Film Co Ltd Method for automatically cleaning vacuum deposition tank and device therefor
WO2012008455A1 (en) * 2010-07-13 2012-01-19 株式会社アルバック Film-forming apparatus and method for cleaning film-forming apparatus
WO2016147443A1 (en) * 2015-03-18 2016-09-22 株式会社東芝 Gas-recycling device, additive layer fabrication apparatus, and additive layer fabrication method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS479567U (en) * 1971-02-26 1972-10-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS479567U (en) * 1971-02-26 1972-10-04

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62196367A (en) * 1986-02-25 1987-08-29 Ulvac Corp Cleaning device for vacuum treatment vessel
JPS62205268A (en) * 1986-03-04 1987-09-09 Ulvac Corp Device for cleaning vacuum treatment tank
JPH0582468B2 (en) * 1986-03-04 1993-11-19 Ulvac Corp
JPH06272027A (en) * 1993-03-17 1994-09-27 Fuji Photo Film Co Ltd Method for automatically cleaning vacuum deposition tank and device therefor
WO2012008455A1 (en) * 2010-07-13 2012-01-19 株式会社アルバック Film-forming apparatus and method for cleaning film-forming apparatus
JP5553898B2 (en) * 2010-07-13 2014-07-16 株式会社アルバック Film forming apparatus and method for cleaning film forming apparatus
WO2016147443A1 (en) * 2015-03-18 2016-09-22 株式会社東芝 Gas-recycling device, additive layer fabrication apparatus, and additive layer fabrication method
JP2016174990A (en) * 2015-03-18 2016-10-06 株式会社東芝 Gas reusing device, lamination molding device, and lamination molding method
US10780495B2 (en) 2015-03-18 2020-09-22 Kabushiki Kaisha Toshiba Gas-recycling device, additive manufacturing apparatus, and additive manufacturing method

Also Published As

Publication number Publication date
JPH0116309B2 (en) 1989-03-23

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