JPS6054150A - Ion source - Google Patents

Ion source

Info

Publication number
JPS6054150A
JPS6054150A JP58158951A JP15895183A JPS6054150A JP S6054150 A JPS6054150 A JP S6054150A JP 58158951 A JP58158951 A JP 58158951A JP 15895183 A JP15895183 A JP 15895183A JP S6054150 A JPS6054150 A JP S6054150A
Authority
JP
Japan
Prior art keywords
container
sample
ion source
heating furnace
case
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58158951A
Other languages
Japanese (ja)
Other versions
JPH0580099B2 (en
Inventor
Susumu Ozasa
小笹 進
Kuniyuki Sakumichi
訓之 作道
Hidemi Koike
英巳 小池
Takayoshi Seki
孝義 関
Toshio Suzuki
敏夫 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58158951A priority Critical patent/JPS6054150A/en
Publication of JPS6054150A publication Critical patent/JPS6054150A/en
Publication of JPH0580099B2 publication Critical patent/JPH0580099B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00Ion beam tubes
    • H01J27/02Ion sources; Ion guns

Abstract

PURPOSE:To enable a sample to be safely and easily handled by providing both a case in which the sample is airtightly sealed and which is installed in a heating furnace in such a manner as to allow it to be attached or detached from the heating furnace, and a means used to break the sealed state of the case by an operation performed from outside the heating furnace after it is subjected to vacuum exhaustion. CONSTITUTION:A metallic case 2 in which a sample 1 is airtightly sealed by means of a rare gas such as argon is installed in a given position in a heating furnace 6. After lids 5 and 11 are attached to the metallic case 2 and a device 10 respectively and the internal pressure of the device 10 is reduced to below a given pressure by vacuum exhaustion, a handle 12 attached to the lid 11 is rotated to move down the needle 3 of the lid 5 in order to form a penetrating hole in the upper hill of the metallic case 2. After the formation of the penetrating hole, the handle 12 is rotated in reverse direction so as to make the needle 3 apart from the upper surface of the case 2 by means of a spring 4 and to make the case 2 continuous with the heating furnace 6. When the heating furnace 6 is heated by feeding current in a heater 7, a sample 1 is evaporated to produce sample vapor which is then supplied to an ionization chamber 9 through a conduit 8.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は、常温では固体状の試料を真空加熱炉で昇温、
気化させてイオン化室に導入してイオンビームとするイ
オン源に係り、特に、試料の取扱いの安全化と簡易化を
図ったイオン源に関するもので1例えば半導体装置製造
におけるイオン打込み装置等に適用することができる。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention involves heating a sample, which is solid at room temperature, in a vacuum heating furnace.
It relates to an ion source that vaporizes and introduces it into an ionization chamber to produce an ion beam, and in particular relates to an ion source that makes handling of a sample safer and easier.1 For example, it is applied to ion implantation equipment in semiconductor device manufacturing. be able to.

〔発明の背景〕[Background of the invention]

半導体のイオン打込み装置においては、砒素。 Arsenic in semiconductor ion implantation equipment.

燐、アンチモン等を試料とし、これらの試料を高速イオ
ンビーム化して、これを不純物として半導体に打込むこ
とが行なわれる。この場合、これらの試料は常温(15
°C)では固体状であるため、真空中で加熱昇温しで気
化させる真空加熱炉を含む熱炉内に挿入されていたが、
試料挿入時及び作業終了後炉内に残留した試料を排出す
る際など、試料の粉末を周囲に散乱させる危険性があり
、取扱い及び安全性の点で問題があった。特に、砒素は
有毒性の元素であり、固体試料の使用が強く望まれ、試
料の加熱炉への入れ換え作業には、より安全な装置がめ
られている。
Phosphorus, antimony, etc. are used as samples, and these samples are converted into high-speed ion beams, which are implanted into semiconductors as impurities. In this case, these samples were kept at room temperature (15
°C), it is in a solid state, so it was inserted into a thermal furnace including a vacuum heating furnace that heats it in a vacuum and vaporizes it.
There was a risk of scattering the sample powder around when inserting the sample and when discharging the sample remaining in the furnace after the work was completed, which caused problems in terms of handling and safety. In particular, arsenic is a toxic element, so the use of solid samples is strongly desired, and safer equipment is required for transferring samples to the heating furnace.

質量分析器などでは、試料をガラス容器(アンプル)に
封入し真空中でアンプルを破壊させることが行なわれて
おり、イオン源にこれを応用すれば試料挿入時の問題は
無くなるが、しかし残留試料が周囲に散乱する問題は依
然として残り、さらに、ガラスの破片を排出する問題が
加わることになる。
In mass spectrometers, the sample is sealed in a glass container (ampule) and the ampoule is destroyed in a vacuum.If this is applied to the ion source, the problem when inserting the sample will be eliminated; The problem of glass fragments being scattered around still remains, and there is now the added problem of ejecting glass fragments.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、イオン源装置における上記した従来技
術での問題を解決し、試料を安全かつ簡易に取扱うこと
のできるイオン源を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to solve the problems of the above-mentioned conventional techniques in ion source devices and to provide an ion source that can safely and easily handle a sample.

〔発明の概要〕[Summary of the invention]

本発明の特徴は、試料の気化温度に耐える材料で作られ
、内部に試料を密封した状態で加熱炉内に挿脱可能に挿
入される容器と、加熱炉を真空排気後加熱炉外部からの
操作で容器の密封状態を破る手段とを備えた構成とする
にある。
The present invention is characterized by a container that is made of a material that can withstand the vaporization temperature of the sample and that is removably inserted into the heating furnace with the sample sealed inside. and a means for breaking the sealed state of the container by operation.

この場合の容器としては、試料が砒素、燐、アンチモン
等である場合は、それぞれの気化温度に耐える金属製の
密封容器を、あるいは試料を密封状に収納したガラス容
器の外側をさらに一部開放または全密閉の金属製容器で
かこんで構成される容器を採用することができ、また、
試料がGaOノ。。
In this case, if the sample is arsenic, phosphorus, antimony, etc., the container should be a sealed metal container that can withstand the vaporization temperature of each substance, or a glass container containing the sample in a hermetically sealed container with the outside partially opened. Alternatively, a container consisting of a completely hermetically sealed metal container can be adopted, and
The sample is GaO. .

Al0IB 、 GaIB 、 A−JI、等の金属、
ハロケン化合物である場合は、これらの化合物の気化温
度は比較的低いことから、容器としては、溶融点がそれ
ぞれの気化温度より高い合成樹脂製の容器を採用するこ
ともできる。
Metals such as Al0IB, GaIB, A-JI,
In the case of a halokene compound, since the vaporization temperature of these compounds is relatively low, a container made of synthetic resin whose melting point is higher than the respective vaporization temperature can also be used as the container.

〔発明の実施例〕[Embodiments of the invention]

以下1図面により本発明の詳細な説明する。 The present invention will be explained in detail below with reference to one drawing.

第1図は本発明の一実施例の断面図である。第1図にお
いて、1は試料、2は金属製の容器、3は常時はバネ4
のバネ力で上方位置にあるが上方から押圧されることに
よって下降して容器2の上面に貫通孔をあける働きをす
る針、5は加熱炉6のフタ、7は加熱炉6を加熱するヒ
ータ、8は加熱炉6内に生じた試料蒸気をイオン化室9
に導入する導管、10は装置の外壁、11は装置のフタ
、12はa13を下降させる際に用いるつまみである。
FIG. 1 is a sectional view of an embodiment of the present invention. In Fig. 1, 1 is a sample, 2 is a metal container, and 3 is a spring 4.
The needle is located at the upper position due to the spring force of the needle, but when pressed from above, it descends and serves to make a through hole in the upper surface of the container 2. 5 is the lid of the heating furnace 6, and 7 is a heater that heats the heating furnace 6. , 8 transfers the sample vapor generated in the heating furnace 6 to an ionization chamber 9
10 is the outer wall of the device, 11 is the lid of the device, and 12 is a knob used when lowering a13.

試料1は金属製の容器2に真空またはアルゴン等の希ガ
スで密封されている。装置10内を大気圧とした状態で
、フタ11及び加熱炉6のフタ5を取外し。
The sample 1 is sealed in a metal container 2 under vacuum or with a rare gas such as argon. With the inside of the device 10 at atmospheric pressure, remove the lid 11 and the lid 5 of the heating furnace 6.

上記試料1が密封された容器2を、加熱炉6内の所定の
位置に挿入する。フタ5及び11を取付け。
The container 2 in which the sample 1 is sealed is inserted into a predetermined position in the heating furnace 6. Install lids 5 and 11.

装置10の内部を真空排気し所定の圧力以下に到達後、
フタ1】に取付げられているつまみ12を回転し。
After evacuating the inside of the device 10 and reaching a predetermined pressure or less,
Turn the knob 12 attached to the lid 1.

フタ5に配置されている&t 3を下降させ、これによ
り、金属製の容器2の上面に貫通孔をあける。
The &t 3 placed on the lid 5 is lowered, thereby making a through hole in the upper surface of the metal container 2.

この貫通孔がおいてから、つまみ12を逆に回転するこ
とにより、針3はバネ4により容器2の上面から離れ、
容器2と加熱炉6内とが連通ずる。ヒータ7に通電して
加熱炉6を加熱昇温すれば、試料1は気化し、生じた試
料蒸気は導管8を通ってイオン化室9に供給される。排
出の場合は、加熱炉を冷却し、装置10内を大気圧とし
てからフタ】1及び5を取外し、容器2を引き出し、そ
のまま廃棄処分する。
After this through hole is formed, by rotating the knob 12 in the opposite direction, the needle 3 is separated from the top surface of the container 2 by the spring 4.
The container 2 and the inside of the heating furnace 6 communicate with each other. When the heater 7 is energized to heat and raise the temperature of the heating furnace 6, the sample 1 is vaporized, and the resulting sample vapor is supplied to the ionization chamber 9 through the conduit 8. In the case of discharge, the heating furnace is cooled and the inside of the apparatus 10 is brought to atmospheric pressure, the lids 1 and 5 are removed, the container 2 is pulled out, and the container 2 is disposed of as is.

容器2の金属と長時間接触していると変質する可能性の
ある試料の場合は、第2図に一例を示すように、まず試
料jをガラス容器】3に密閉状に封入し、このガラス容
器13の外周を、さらに金属製の容器2で包み込むよう
にする。この構成の容器を用いるときには、金属製の容
器2に孔をあけると同時にガラス容器13が破壊するよ
うにする。上記構成の場合、試料1はガラス容器13で
密封されているため、金属製の容器2は必ずしも密封す
る必要はないが、ガラス容器13が誤って壊れた場合の
危険性がある場合には、有毒性や引火性等に対する安全
上から、金属性の容器2も密封とすることが好ましい。
In the case of a sample that may change in quality if it comes into contact with the metal in container 2 for a long time, first seal sample j in glass container 3, as shown in an example in Figure 2. The outer periphery of the container 13 is further wrapped around the metal container 2. When using a container with this configuration, the glass container 13 is destroyed at the same time as a hole is made in the metal container 2. In the case of the above configuration, since the sample 1 is sealed in the glass container 13, the metal container 2 does not necessarily need to be sealed, but if there is a risk of the glass container 13 being accidentally broken, For safety reasons such as toxicity and flammability, it is preferable that the metal container 2 is also sealed.

なお、第2図の符号14は、ガラス容器13を密封する
際の封じ部を示している。
Note that the reference numeral 14 in FIG. 2 indicates a sealing portion for sealing the glass container 13.

金属製の容器2の上面に、第3図の斜視図に示すように
、小片15を設けておけば、容器2を加熱炉6から容易
に排出することができる。即ち、第3図(a)の小片1
5をピンセット等で起こして第3図(b)の】5′の状
態とし、この15′をつまんで引き出すようにすればよ
い。
If a small piece 15 is provided on the top surface of the metal container 2, as shown in the perspective view of FIG. 3, the container 2 can be easily discharged from the heating furnace 6. That is, the small piece 1 in FIG. 3(a)
5 with tweezers or the like to bring it into the state shown in FIG. 3(b), then pinch this 15' and pull it out.

また、金属製の容器2の上面中央部に第4図に示したよ
うな部分的に薄し・個所を設けることにより9m13に
よる孔あけ作業を容易とすることかできる。
Further, by providing a partially thinned area as shown in FIG. 4 in the center of the upper surface of the metal container 2, the drilling operation using 9 m13 can be facilitated.

なお1以上の実施例にお℃・では、試料として砒素、燐
、アンチモン等を採用する場合を考えて。
Note that in one or more of the embodiments, the temperature is assumed to be arsenic, phosphorus, antimony, etc. as a sample.

容器は金属製の容器あるし・はガラス容器と金属容器と
の2重構成の容器を採用するとして説明したが、試料が
(3taCIB 、 AlCIB 、 Ga13 、 
AIIB等である場合は、前述のようにこれらの試料の
気化温度が比較的低いことから、容器としては必らずし
も金属製やガラス製の容器を採用する必要はなく。
The explanation was made assuming that the container is a metal container or a double container consisting of a glass container and a metal container, but if the sample is (3taCIB, AlCIB, Ga13,
In the case of AIIB, etc., since the vaporization temperature of these samples is relatively low as described above, it is not necessarily necessary to use a metal or glass container as the container.

作製容易な合成樹脂製容器とすることができ、同様の効
果を生じさせることが可能である。
It is possible to use a synthetic resin container that is easy to manufacture, and it is possible to produce similar effects.

〔発明の効果〕〔Effect of the invention〕

以上述べたように2本発明によれば、非常に簡単な構成
により試料、特に毒性や引火性などの危険な試料、を安
全かつ容易に取扱うことができ。
As described above, according to the present invention, samples, especially dangerous samples such as toxic or flammable samples, can be handled safely and easily with a very simple configuration.

また試料は密封された状態で保管されるようになること
から、不純物が混入したり変質を生じたりすることがな
(、常に均質な試料蒸気をイオン化室に供給でき、イオ
ン打込装置などに適用して大きな効果を生じさせること
ができる。
In addition, since the sample is stored in a sealed state, there is no chance of contamination with impurities or deterioration of the quality. It can be applied to great effect.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の断面図、第2図は本発明に
おける試料容器の他の実施例を示す図。 第3図は同じく金属製容器の斜視図で(a、)は引出し
用小片を起こす前、 (b)は起こした後の状態を示す
図、第4図は金属容器の上面に設けられる薄く部分の一
例を示す平面図と断面図である。 符号の説明 10.試オ」 2・・・金属製容器 3・・針 4・・バネ 5゛°加熱炉のフタ 6・・・加熱炉 7・・・ヒータ 8・・・導管 9・・イオン化室 1o・・装置の外壁月・・・装置の
フタ 12・・つまみ 13°′ガラス容器 14・・ガラス容器の封じ部J、
5 、15’・・取出し用小片 代理人弁理士 中 村 純之助 ;v=2図 シ平戸 3 図 A・41図 Δ・1 図
FIG. 1 is a sectional view of one embodiment of the present invention, and FIG. 2 is a diagram showing another embodiment of the sample container of the present invention. Figure 3 is a perspective view of the same metal container, (a,) shows the state before raising the drawer piece, (b) shows the state after raising it, and Figure 4 shows the thin part provided on the top surface of the metal container. FIG. 2 is a plan view and a sectional view showing an example of the invention. Explanation of symbols 10. 2...Metal container 3...Needle 4...Spring 5゛°Heating furnace lid 6...Heating furnace 7...Heater 8...Conduit 9...Ionization chamber 1o...Device Outer wall of the device... Lid of the device 12... Knob 13°' Glass container 14... Sealing part of the glass container J,
5, 15'... Patent attorney representing the small pieces for extraction Junnosuke Nakamura;

Claims (7)

【特許請求の範囲】[Claims] (1) 常温では固体状の試料を真空加熱炉で昇温。 気化させてイオン化室に導入するイオン源において、試
料の気化温度に耐える材料で作られ内部に試料を密封し
た状態で前記加熱炉内に挿脱可能に挿入される容器と、
加熱炉を真空排気後加熱炉外部からの操作で前記容器の
密封状態を破る手段とを備えたことを特徴とするイオン
源。
(1) A sample that is solid at room temperature is heated in a vacuum heating furnace. In an ion source that vaporizes the sample and introduces it into the ionization chamber, a container is made of a material that can withstand the vaporization temperature of the sample and is removably inserted into the heating furnace with the sample sealed inside;
An ion source comprising means for breaking the sealed state of the container by an operation from outside the heating furnace after the heating furnace is evacuated.
(2) 特許請求の範囲第1項記載のイオン源において
、前記容器が金属製容器であることを特徴とするイオン
源。
(2) The ion source according to claim 1, wherein the container is a metal container.
(3)特許請求の範囲第1項記載のイオン源において、
前記容器が、試料を密封状態に収納したガラス容器と、
このガラス容器をその外周部で包み込む一部開放状また
は全密閉状の金属容器とからなる容器であることを特徴
とするイオン源。
(3) In the ion source according to claim 1,
a glass container in which the container stores a sample in a sealed state;
An ion source characterized in that the container is comprised of a partially open or completely sealed metal container surrounding the glass container at its outer periphery.
(4)特許請求の範囲第1項〜第3項のいずれかに記載
のイオン源において、前記加熱炉が、その下部にイオン
化室に連通ずる導管が取付けられ、その上部には着脱自
在のフタが装着され、さらに。 このフタに常時はバネ力で上方位置にあるが外部からの
抑圧操作で下降する針が取付けられている加熱炉である
ことを特徴とするイオン源。
(4) In the ion source according to any one of claims 1 to 3, the heating furnace is provided with a conduit connected to the ionization chamber at its lower part, and a removable lid at its upper part. is attached, and furthermore. An ion source characterized by being a heating furnace in which a needle is attached to the lid, which is normally in an upward position due to a spring force, but is moved downward by an external suppression operation.
(5)特許請求の範囲第1項〜第4項のいずれかに記載
のイオン源において、前記試料が砒素・燐・アンチモン
のいずれかであり、上記試料の蒸気をイオンビームとし
これを不純物として半導体に注入するイオン打込みに用
いることを特徴とするイオン源。
(5) In the ion source according to any one of claims 1 to 4, the sample is one of arsenic, phosphorus, and antimony, and the vapor of the sample is used as an ion beam and is used as an impurity. An ion source characterized by being used for ion implantation into semiconductors.
(6)特許請求の範囲第1項記載のイオン源において、
前記試料がGa01B 、AlCl5 、 Gal61
 A1l5などの金属ハロゲン化合物であり、前記容器
が9合成樹脂製の容器であることを特徴とするイオン源
(6) In the ion source according to claim 1,
The samples are Ga01B, AlCl5, Gal61
An ion source which is a metal halide compound such as A115, and wherein the container is a container made of 9 synthetic resin.
(7) 特許請求の範囲第2項記載のイオン源において
、前記金属製容器が、この容器を前記加熱炉から取出す
際に用いる取出し用小片が容器の一部に取付けられてい
る金属製容器であることを特徴とするイオン源。
(7) In the ion source according to claim 2, the metal container is a metal container in which a small piece for taking out the container is attached to a part of the container for use in taking out the container from the heating furnace. An ion source characterized by:
JP58158951A 1983-09-01 1983-09-01 Ion source Granted JPS6054150A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58158951A JPS6054150A (en) 1983-09-01 1983-09-01 Ion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58158951A JPS6054150A (en) 1983-09-01 1983-09-01 Ion source

Publications (2)

Publication Number Publication Date
JPS6054150A true JPS6054150A (en) 1985-03-28
JPH0580099B2 JPH0580099B2 (en) 1993-11-05

Family

ID=15682898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58158951A Granted JPS6054150A (en) 1983-09-01 1983-09-01 Ion source

Country Status (1)

Country Link
JP (1) JPS6054150A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0221056A4 (en) * 1985-05-17 1987-09-08 Schumacher Co J C Ion beam implant system.
EP0263815A1 (en) * 1986-04-09 1988-04-20 Air Products And Chemicals, Inc. Semiconductor dopant vaporizer
JPH03122451U (en) * 1990-03-26 1991-12-13
WO2008088971A2 (en) * 2007-01-11 2008-07-24 Varian Semiconductor Equipment Associates, Inc. Techniques for providing ion source feed materials
US20180346342A1 (en) * 2017-06-05 2018-12-06 Axcelis Technologies, Inc. Hydrogen CO-Gas When Using Aluminum Iodide as an Ion Source Material
JP2019525382A (en) * 2016-06-21 2019-09-05 アクセリス テクノロジーズ, インコーポレイテッド Implantation with solid aluminum iodide (ALI3) to generate aluminum atomic ions and in situ cleaning of aluminum iodide and its associated by-products

Citations (1)

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Cited By (17)

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EP0221056A4 (en) * 1985-05-17 1987-09-08 Schumacher Co J C Ion beam implant system.
EP0263815A1 (en) * 1986-04-09 1988-04-20 Air Products And Chemicals, Inc. Semiconductor dopant vaporizer
JPS63502384A (en) * 1986-04-09 1988-09-08 エアー・プロダクツ・アンド・ケミカルズ・インコーポレーテッド evaporator
JPH03122451U (en) * 1990-03-26 1991-12-13
WO2008088971A2 (en) * 2007-01-11 2008-07-24 Varian Semiconductor Equipment Associates, Inc. Techniques for providing ion source feed materials
WO2008088971A3 (en) * 2007-01-11 2009-06-11 Varian Semiconductor Equipment Techniques for providing ion source feed materials
US7655932B2 (en) 2007-01-11 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for providing ion source feed materials
JP2010516037A (en) * 2007-01-11 2010-05-13 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド Ion source material supply technology
US10774419B2 (en) 2016-06-21 2020-09-15 Axcelis Technologies, Inc Implantation using solid aluminum iodide (ALI3) for producing atomic aluminum ions and in situ cleaning of aluminum iodide and associated by-products
JP2019525382A (en) * 2016-06-21 2019-09-05 アクセリス テクノロジーズ, インコーポレイテッド Implantation with solid aluminum iodide (ALI3) to generate aluminum atomic ions and in situ cleaning of aluminum iodide and its associated by-products
JP2019525381A (en) * 2016-06-21 2019-09-05 アクセリス テクノロジーズ, インコーポレイテッド Implantation with solid aluminum iodide (ALI3) to generate aluminum atomic ions and in situ cleaning of aluminum iodide and its associated by-products
US20180346342A1 (en) * 2017-06-05 2018-12-06 Axcelis Technologies, Inc. Hydrogen CO-Gas When Using Aluminum Iodide as an Ion Source Material
US10676370B2 (en) * 2017-06-05 2020-06-09 Axcelis Technologies, Inc. Hydrogen co-gas when using aluminum iodide as an ion source material
JP2020522838A (en) * 2017-06-05 2020-07-30 アクセリス テクノロジーズ, インコーポレイテッド Hydrogen cogas when aluminum iodide is used as the ion source material
CN111263971A (en) * 2017-06-05 2020-06-09 艾克塞利斯科技公司 Hydrogen co-generation when aluminum iodide is used as the ion source material
TWI785057B (en) * 2017-06-05 2022-12-01 美商艾克塞利斯科技公司 An ion implantation system, a method for implanting aluminum ions into a workpiece, and a method for cleaning an ion implantation system using an aluminum iodide source material that produces residual aluminum iodide
CN111263971B (en) * 2017-06-05 2023-03-14 艾克塞利斯科技公司 Hydrogen co-generation when aluminum iodide is used as the ion source material

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