JPS6044820B2 - Method of manufacturing metallized film capacitors - Google Patents
Method of manufacturing metallized film capacitorsInfo
- Publication number
- JPS6044820B2 JPS6044820B2 JP1096678A JP1096678A JPS6044820B2 JP S6044820 B2 JPS6044820 B2 JP S6044820B2 JP 1096678 A JP1096678 A JP 1096678A JP 1096678 A JP1096678 A JP 1096678A JP S6044820 B2 JPS6044820 B2 JP S6044820B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- dielectric
- metallized film
- manufacturing
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【発明の詳細な説明】
本発明は、特殊な構造を有する誘電体フィルムを誘電体
として金属化した金属化フィルムをもつて構成した新規
な金属化フィルムコンデンサの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a novel metallized film capacitor constructed by using a metallized film having a special structure as a dielectric material.
上記誘電体フィルムは、多孔質と緻密質が層状に共存し
たもので、フィルム形成時に同時に両層が誘電体の表裏
両面にそれぞれ発現する非対称フィルムである。The dielectric film described above is an asymmetric film in which porous and dense layers coexist in a layered manner, and both layers are simultaneously developed on both the front and back surfaces of the dielectric at the time of film formation.
従来、金属化フィルムコンデンサには、均質で緻密な誘
電体フィルムが用いられてきた。Conventionally, metallized film capacitors have used homogeneous and dense dielectric films.
しかるに、このコンデンサでは微小放電に基づく自己回
復作用がなされるが、使用電位傾度を高く採る等の苛酷
条件下ではフィルム中に遊離炭素量が増加する自己回復
作用となり、作用の完全さが低下する。However, although this capacitor has a self-healing effect based on minute discharges, under severe conditions such as using a high potential gradient, the self-healing effect increases as the amount of free carbon in the film increases, reducing the completeness of the action. .
本発明の目的は特殊な製造方法を採ることにより特殊な
構造を有する金属化フィルムを発現させ、この欠点を克
服することにある。即ち本発明の製造方法によりなる金
属化フィルムコンデンサでは上記条件下でも炭素量が低
くより完全な自己回復作用が行われる等の特長を有する
。本発明の製造方法による誘電体フィルムの金属化は、
一面の均質緻密質は真空蒸着等の気相メッキ法で達成さ
れるし、他面の連続空孔部を有する多孔質層部では、電
解メッキ液、無電解メッキ液、導電性ペイント液、金属
超微粒子分散液等の含浸等の液相法で達成可能である。The object of the invention is to overcome this drawback by developing a metallized film with a special structure by means of a special production method. That is, the metallized film capacitor manufactured by the manufacturing method of the present invention has features such as a low carbon content and a more complete self-healing action even under the above conditions. Metallization of the dielectric film by the manufacturing method of the present invention is as follows:
A homogeneous and dense layer on one side can be achieved using a vapor phase plating method such as vacuum evaporation, and a porous layer with continuous pores on the other side can be produced using electrolytic plating solution, electroless plating solution, conductive paint solution, metal plating solution, etc. This can be achieved by a liquid phase method such as impregnation with an ultrafine particle dispersion.
また、このような誘電体フィルムは、アセチルセルロー
ス、エチルセルロース、ブチルセルロース、シアノエチ
ル化セルロース等のセルロース誘電体、ポリカーボネー
ト、ポリエチレンフタレート、ポリエチレンナフタレー
ト、ポリブチレンテレフタレート、各種ポリアミド、ポ
リイミド、フッ化ビニール、フッ化ビニリデン、塩素化
フッ化ビニール、塩素化フッ化ビニリデン、ポリスチレ
ン等の高分子材料を単独または混合して用いることがで
きる。In addition, such dielectric films can be made of cellulose dielectrics such as acetyl cellulose, ethyl cellulose, butyl cellulose, and cyanoethylated cellulose, polycarbonate, polyethylene phthalate, polyethylene naphthalate, polybutylene terephthalate, various polyamides, polyimide, vinyl fluoride, and fluoride. Polymer materials such as vinylidene chloride, chlorinated vinyl fluoride, chlorinated vinylidene fluoride, and polystyrene can be used alone or in combination.
さらに本構造の形成には、これらの高分子材料を高蒸発
性良溶媒、低あるいは無蒸発性膨潤剤からなる混合溶媒
に溶解し、調整した液・を板上にキャストし、一定時間
高蒸発性良溶媒に富んだものを蒸発させて上層部に緻密
層を発現させ、膨潤剤が大部分残留する状態で板と共に
ゲル化液中に投入すると、下層部にゲル層が発現し、膨
潤剤をゲル液中に滲出させ、水洗すれば非対称・構造が
定着する。その後、真空乾燥等を行えば、誘電体フィル
ムとなる。なおこのような方法では、溶剤、膨潤剤の種
類、量、両者の混合化、蒸発条件、ゲル化液の種類、液
温等により、誘電体構造、すなわち緻密層の厚み、ゲル
層の空孔状態を制御できる。次に上記誘電体フイルムを
用いてコンデンサ素子を形成するには、誘電体フイルム
の両面に金属化により電極を形成し、それを別の非金属
化誘電体フイルムと重ねるか、あるいは電極を形成した
誘電体フイルムの片面または両面に別の誘電体を塗布、
グロー放電等の方法で形成させ、これら複合誘電体を巻
回、積層することにより達成する。Furthermore, to form this structure, these polymeric materials are dissolved in a mixed solvent consisting of a high evaporation good solvent and a low or non-evaporation swelling agent, the prepared solution is cast onto a plate, and the high evaporation rate is maintained for a certain period of time. A dense layer is formed in the upper layer by evaporating a solvent rich in good properties, and when the board is put into a gelling solution with most of the swelling agent remaining, a gel layer appears in the lower layer, and the swelling agent The asymmetric structure is fixed by exuding it into the gel solution and washing it with water. After that, if vacuum drying or the like is performed, a dielectric film is obtained. In addition, in this method, the dielectric structure, that is, the thickness of the dense layer, the pores in the gel layer, etc., depends on the type and amount of solvent and swelling agent, the mixing of both, evaporation conditions, type of gelling liquid, liquid temperature, etc. You can control the state. Next, in order to form a capacitor element using the above dielectric film, electrodes are formed on both sides of the dielectric film by metallization, and then this is overlapped with another non-metalized dielectric film, or electrodes are formed on both sides of the dielectric film. Coating another dielectric on one or both sides of the dielectric film,
This is achieved by forming by a method such as glow discharge, and by winding and laminating these composite dielectrics.
このようにして達成した本発明の製造方法による金属化
フイルムコンデンサは、種々の優れた特徴を有するが、
最大の特徴は、自己回復作用が極めて効率的に行われ、
これに伴う悪影響が全くない。すなわち、コンデンサの
電圧処理後の電気的特性の劣化が極めて少ない。これは
自己回復作用時に誘電体に残留する遊離炭素量が評価さ
れる。すなわち種々実験研究の結果、従来の均質緻密誘
電体中の場合に比し、本発明のコンデンサでは、この遊
離炭素量が極めて少ないことを各コンデンサの誘電体フ
イルムの炭素の元素分析結果より確認した。これは本誘
電体フイルムの構造、形状の特異性に基づくものである
。すなわち、均質緻密層の裏面形状とこれに連続する多
孔質層形状、これに起因する電極形状の効果によるもの
であることを合せて確認した。またこの効果のために、
従来、自己回復作用の面で金属化フイルムコンデンサに
は不適当とされてきた、ハロゲン含有ポリマーや化学構
造上のパラコール的見地から、水素、酸素の炭素に対す
る割合の少ないポリマー群でも本発明の誘電体フイルム
に適用すれば良好な結果を得ることができる。さらに本
発明の製造方法からなる非対称誘電体フイルムでは実効
誘電体となる緻密層の厚みが極めて薄く形成されるため
、この点も自己回復作用に効果的に働く。The metallized film capacitor manufactured by the manufacturing method of the present invention thus achieved has various excellent characteristics, but
The biggest feature is that the self-healing action is extremely efficient,
There are no negative effects associated with this. That is, the deterioration of the electrical characteristics of the capacitor after voltage treatment is extremely small. This evaluates the amount of free carbon remaining in the dielectric during the self-healing action. In other words, as a result of various experimental studies, it was confirmed from the elemental analysis results of carbon in the dielectric film of each capacitor that the amount of free carbon in the capacitor of the present invention is extremely small compared to the case in a conventional homogeneous dense dielectric material. . This is based on the unique structure and shape of this dielectric film. That is, it was confirmed that this was due to the effects of the back surface shape of the homogeneous dense layer, the shape of the porous layer continuous thereto, and the electrode shape resulting from this. Also, due to this effect,
The dielectric of the present invention can be applied to polymers containing a small proportion of hydrogen and oxygen to carbon, since they have traditionally been considered unsuitable for metallized film capacitors in terms of self-healing action, and from the viewpoint of parachol-like chemical structures. Good results can be obtained when applied to body films. Furthermore, in the asymmetric dielectric film produced by the manufacturing method of the present invention, the dense layer serving as the effective dielectric is formed to be extremely thin, and this point also works effectively for self-healing.
次に本発明の界鰺例を第1表、第2表に示す。Next, Tables 1 and 2 show examples of Kaizai according to the present invention.
また上記第1表において、NO.l,NO.4の非対称
秀電体フイルムの形成条件は、第2表のようであ)た。
以上の説明から明らかなように、本発明の製造り法によ
る金属化フイルムコンデンサは、電圧処理後の炭素量比
がきわめて少なく、自己回復作用が効果的に行われてい
るものであり、したがつてコンデンサ特性は良好なもの
であり、また多孔質層への電極の浸透もあつてコンデン
サの小型大容量化も達成可能であり、その産業性はきわ
めて大なるものである。Also, in Table 1 above, No. l, NO. The conditions for forming the asymmetric high-density film No. 4 were as shown in Table 2.
As is clear from the above explanation, the metallized film capacitor manufactured by the manufacturing method of the present invention has an extremely low carbon content ratio after voltage treatment, and has an effective self-healing effect. Therefore, the capacitor characteristics are good, and because the electrodes penetrate into the porous layer, it is possible to make the capacitor smaller and larger in capacity, and its industrial potential is extremely large.
Claims (1)
た高蒸発性良溶媒に高分子材料を溶解させ、キャストし
て多孔質層と緻密質層が層状に共存する非対称フィルム
化を達成した後にこのフィルムを金属化し誘電体として
構成することを特徴とする金属化フィルムコンデンサの
製造方法。1 A polymeric material was dissolved in a highly evaporative solvent containing a low-evaporative swelling agent or a non-evaporative swelling agent, and cast to create an asymmetrical film in which a porous layer and a dense layer coexist in a layered manner. A method for manufacturing a metallized film capacitor, characterized in that the film is later metalized and configured as a dielectric.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1096678A JPS6044820B2 (en) | 1978-02-01 | 1978-02-01 | Method of manufacturing metallized film capacitors |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1096678A JPS6044820B2 (en) | 1978-02-01 | 1978-02-01 | Method of manufacturing metallized film capacitors |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54103538A JPS54103538A (en) | 1979-08-15 |
JPS6044820B2 true JPS6044820B2 (en) | 1985-10-05 |
Family
ID=11764903
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1096678A Expired JPS6044820B2 (en) | 1978-02-01 | 1978-02-01 | Method of manufacturing metallized film capacitors |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6044820B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2256760B1 (en) * | 2008-03-19 | 2019-08-07 | Daikin Industries, Ltd. | Coating composition for forming high dielectric film and high dielectric film |
-
1978
- 1978-02-01 JP JP1096678A patent/JPS6044820B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS54103538A (en) | 1979-08-15 |
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