JPS6037787A - Semiconductor device - Google Patents

Abstract

PURPOSE:To enable to obtain the titled device with a built-in metal-semiconductor diode with a high yield by allowing the ratio of the thickness of a polycrystalline Si film to the thickness of a metallic silicide film formed on this polycrystalline Si to become over a specific ratio. CONSTITUTION:A P type base region 103B is formed on an N type semiconductor substrate 101. Next, a polycrystalline Si thin film 105 is adhered. Then, an Si nitride film 106 is adhered on the surface of the film 105, and the film 106 except the part serving as an electrode wiring line in the future is removed. With the film 106 as a mask, the film 105 is converted into an Si oxide layer 107. Thereby, polycrystalline Si's 108-110 serving as electrode lines in the future are formed. Boron is introduced to the region 110 and to the substrate immediately under it, and phosphorus is introduced to the regions 108 and 109 and to the substrate immediately under them. After the part to serve as the metal- semiconductor diode is exposed, and a metal is adhered, this metal is converted into the metallic silicide 111. Thus, it is contrived that the ratio of the thickness of the film 105 to that of the silicide film 111 become over 1:3.

Description

[Detailed description of the invention] The present invention relates to a semiconductor device II.

Conventionally, it has become common to use polycrystalline silicon thin films in semiconductor devices that have improved performance such as high speed and low IF power consumption and have been integrated in a commercial area. In particular, by selectively increasing the polycrystalline silicon thin film to +H1 and using it as electrodes and wiring that are insulated from each other, the waste area of the device is reduced by 2, resulting in high performance.

Semiconductor devices with a full degree of sieve integration have become possible.

Collection of texts'4. ' is a semiconductor device such as a circuit vc-J', and there is a case where a diode that conducts at a voltage lower than the voltage required for the PN junction of single crystal silicon to conduct in a 1ift direction is required. arise. As such diodes, metal-semiconductor diodes (hereinafter abbreviated as S, B, and D) are used because of their convenient manufacturing method and good high-frequency characteristics.

) is widely used. FIG. 1 shows 12 equivalent circuits of 16 semiconductor devices that are fully utilized at 8°1 (J). Here, by providing all stages of S, H, JJ (1) side circuits at the base and collector junctions of IiN, 1'N transistors, a large forward voltage is prevented from occurring at the pace collector junction, and therefore a large signal is applied to the base. Criminal vC:F
, - the transistor switching time becomes faster.

On the other hand, in order to constitute S, B, and JJi, a structure in which the Sakae crystal semiconductor with a certain resistance rate and the metal or metal 7 lyzide are in contact is essential. and polycrystalline silicon, film ″f:
If S, B, I) are all integrated into a semi-2n body 1h with electrode wiring insulated by selectively converting it into a polycrystalline silicon electrode (the smaller the wire resistance is, the better). Polycrystalline silicon thin +1! Also S on A,
I3. The same method as for IJ, in which all metal silicide is formed, is normally used.

In addition, even when S,1(-1) is completely incorporated into a semiconductor device having a shallow emitter region formed through the entire polycrystalline silicon thin film, the polycrystalline silicon layer on the emitter region is thin due to the simplicity of the process. A method of forming the entire metal silicide by turning S, B, and D is also adopted above.

In this way, when forming metal silicide, in the former case, the electrode resistance value is reduced to V, 10 Ω/or less, S, 13,
The D characteristic becomes worse. Furthermore, in the latter case, gold-silicide is entirely formed on the polycrystalline silicon thin film on the emitter region.

At this time, there was a drawback that the yield decreased due to an emitter-paste junction short circuit due to the cracking phenomenon of silicon.

In any case, 8j3.1) It is impossible to incorporate gold in existing semiconductor devices such as semiconductor devices having the electrode wiring or semiconductor devices having shallow emitter region gold diffused into the polycrystalline silicon thin film 171J. be.

The purpose of non-invention is 8.8. It is an object of the present invention to provide a semiconductor device that is faster and includes a polycrystalline silicon thin film with built-in Df.

In the semiconductor device +d according to the uninvented invention, a silicon thin film is formed on the semiconductor substrate at least by -911X, and at least a portion of the silicon thin film is coated with gold
・Semiconductor in which 11 silicide is formed%l ll'
I died.

The thickness of the silicon thin film is at least three times the thickness of the metal or metal film formed on the silicon thin film. j ridges.

A practical example of the present invention will now be explained with reference to FIGS. do. Next is opening? Opening part 103 J after covering Xl5104 with 7 otoresist, '41'j
Impurity full ion implantation-9-full run pace area 103H
' to form. Then insulation fli, film 105 and 1]
A polycrystalline silicon thin film 105f is formed on the surface of the half-dimensional substrate exposed by the holes 103° and 104! : gas phase) depending on IZ length
Warm up the adhesion. Next is polycrystalline silicon? A silicon electrified film 1.06 full wave is deposited on the surface of the tI7 film for future electrodes [)C
All of the siliconized film except for the part on the area that will become the line is completely removed (21st item 1(A)).

After that, heat treatment is performed using the silicon electrified film 106 as a mask. As a result, the polycrystalline silicon layer is converted into an all-silicon layer 107. (1) At this time, silicon nitriding 11
06, waved 1j16 minute polycrystalline silicon shape! i,
1 body 105 is not oxidized, and each silicon 1 liquefied substance 10
The polycrystalline silicon 108, 109, 110 which becomes 6 is completed in 11 times (Fig. 2 (H)). Next, the silicon ' on the area 110 is Only the oxidized film is completely removed, and boron atoms are introduced into this region and the single-crystal group directly under the groove by the total thermal expansion method.Next, i, (18).

Silicon layer 11 on 109 is removed and these areas +
08. ] (Phosphorus atoms are introduced into the crystal substrate at +9 and 10 below by thermal diffusion method (FIG. 2(C)).

Next, all the silicon nitride hats remaining in the removed area are removed and the polycrystalline silicon IgV is exposed. Next (c, S,
H, J) on the entire photoresist mask.
After the entire metal is deposited on the holes and exposed areas of Jl, heat treatment is performed to convert it into the gold metal metal silicide IJ-1.
(Figure 2 (D)). In this case, it is impossible to select the type of metal such that σ) gold L) silicide has a low resistivity and makes metal-semiconductor contact with the silicon substrate.
It is necessary to set the conditions for conversion to metal silicide so that the electrode wiring resistance value can be reduced in all cases, and the S, B, and D characteristics can be improved.

In the case of platinum (for example, platinum) (then:
+d,;Hero No. 31'xlfA) vCtt,j:,
4 #t'i product Norinian 1f (4thickness 5000λ, platinum film thickness and electrode load resistance (resistance value j) are omitted.Also, b 31:21 (, IJI has platinum ++
This shows the relationship between the a thickness and the reverse direction 1 alcohol pressure value. lf: i1 pressure value illusion 2. m at the point to the current value 10μ,
Measured by Iih value. Figure 883 (~, (B) clearly shows that the wiring resistance is less than 10Ω/hole, and the S, +3.JJ characteristics are excellent.
0 o'A, try 11; j J, I,'
! is in the region of 800 to 1000λ. In addition, S, Hj
In the case where it is possible to accept the pressure-resistant clay in the J spring direction with the V-shaped layer, the platinum film can be made as thick as 1600λ in total, so the wire resistance can be increased. It is useful to make it even smaller.

Figure 4 1 (ΔL (1-()) All references to uninvented
A first embodiment will be explained.

All 11 regions 1031.3 of the base formed by impurity thermal expansion 17'zrl and the surface of the silicon substrate 101 are heated with thermal acid 1 to form a silicon r' change film (Si(+2)
A desired 111-pole hole is fully opened in 102, and the oxidized piece x 102
And 0-No, 143mm polycrystalline silicon on board 101 Fukita part] (151f formation J).

Through the polycrystalline silicon'+, 05i, a shallow emic diffusion region] (19E and collector city (,
Draw a shape of 1. Next, cut the rod part approximately ÷ 2〉' rubber turn - C polycrystalline silicon 105ffij base selection - [,, then S, +3. J) part i, 112
Extrude the IJb holes on the entire nootresist mask (Figure 4 (~)).

Next, after the metal is coated with N, heat treatment is applied to the gold J.
, 4+=if converted to metal silicide 111 (fourth
Figure (B)). It should be noted that selecting the type of the @ group so that the silicon substrate and the gold semiconductor are in contact with each other is the same as in the previous embodiment.

? JS 512.1 v, which shows the relationship between the emitter-base junction yield and the polycrystalline silicon film thickness in the case of a platinum 400A film thickness as an example of a preferred metal.

From the same figure, it can be seen that the film thickness of polycrystalline silicide is increased to prevent the formation of silicon silicide and to achieve high yield IJ. 1.2
It can be seen that it is more difficult than FIOA.

As described below, the thickness of the polycrystalline silicon film and the thickness of the gold layer are 1 to 3 or more, resulting in a high yield.1. I can do it. The ratio between the polycrystalline silicon film thickness and the 11th grade silicide film thickness is determined by the batting accuracy, the performance of the equipment, and the manufacturing capacity, but the optimum value is 1:5 to 7. be.

Further, although an embodiment of a vipolar type semiconductor device has been described, it goes without saying that an MO8 type semi-active device can also be used.

[Brief explanation of the drawing]

Figure 1 is an isometric circuit diagram of a semiconductor device having a semi-cotton body and a metal diode. 71 Figure 1 2Δ) to (J)) are each /
r The fruit of non-invention is the manufacturing process of 11 semiconductor devices.
'1) is a further side view. Figure 3 (Δ) U: Heat treatment at 600'C when polycrystalline silicon film thickness is 5000A
2 wiring resistance value at I5 minutes, platinum film thickness is 1jkl
Figure 4 (A)
+, (13) is a cross-sectional view shown along the process in A (manufacturing of another practical example of the invention;
Emitter-base junction step '1 after heat treatment at OOA for 6oo'c 15 minutes [Polycrystalline silicon film thickness V]
A graph showing the relationship -:). In the figure, 101-1. ,q't#;,';crystalline silicon substrate, 10
2=...-absolute 4-layer coating, 1 (13,104...-opening in insulation wave 11'-, 105...polycrystalline film 1
Noconn rule 1j labor, 106...silicon nitride) 11
08,109゜110...Polycrystalline silicon' turtle/wrong wiring path, 107-...Silicon (・European film, 111...
・Metal sinocide. 103B...P-type base region, 109E...
N-type emitter region, gold shown. ..., 4. ＼ E ■ 1 person 41゛ ”-t: 171 1M ° (
゛. 1st lab fR) White 7 outer π bridge shoulder (2) c%) To 6 outer ship - z″?■

Claims (5)

[Claims] (1) A silicon thin film is formed on at least a portion of the semiconductor substrate, and at least 'r? In a semiconductor device in which the entire set or metal silicide is formed in the B portion, the thickness of the silicon thin film is equal to the thickness of the gold 4114 formed on the silicon thin film and 3 of the total set of silicide film thickness.
Semiconductor devices for which special feature 1 is specified as being more than twice as large. (2) Is the silicon 9° film provided on an insulating film on a semiconductor substrate? 29 connected to the semiconductor substrate in the aperture window 17
, 7, and a mantissa aperture window is formed in at least a part of the insulating film on the other semiconductor substrate on which the face silicon thin film is not provided, and at least a part of the silicon thin film and the mantissa aperture window are formed. Claim 1: A semiconductor device according to claim 1, characterized in that a metal or a metal silicide is formed. (3) The semiconductor device according to claim 1 (1), wherein the silicon thin film 1j is a polycrystalline silicon thin film. (4) The semi-condensed body according to claim 1, wherein the metal or metal silicide is platinum or platinum silicide, molybdenum or molybdenum silicide, tungsten or tungsten silicide. Fashionable. (5) The silicon thin film is a polycrystalline silicon thin film!
71 A metal-semiconductor diode is formed in at least a portion of the aperture window of the above-mentioned number of countries.
Claim 2-[(The half-body device described in claim 21.